DE1966847A1 - Transistor - Google Patents
TransistorInfo
- Publication number
- DE1966847A1 DE1966847A1 DE19691966847 DE1966847A DE1966847A1 DE 1966847 A1 DE1966847 A1 DE 1966847A1 DE 19691966847 DE19691966847 DE 19691966847 DE 1966847 A DE1966847 A DE 1966847A DE 1966847 A1 DE1966847 A1 DE 1966847A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- base
- collector
- transistor
- additional surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- STRAHSCTRLRZNU-UHFFFAOYSA-N 4-(9h-carbazol-3-ylamino)phenol Chemical compound C1=CC(O)=CC=C1NC1=CC=C(NC=2C3=CC=CC=2)C3=C1 STRAHSCTRLRZNU-UHFFFAOYSA-N 0.000 description 1
- 101100129922 Caenorhabditis elegans pig-1 gene Proteins 0.000 description 1
- 101100520057 Drosophila melanogaster Pig1 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6805704A NL162500C (nl) | 1968-04-23 | 1968-04-23 | Geintegreerd condensatorgeheugen. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1966847A1 true DE1966847A1 (de) | 1974-09-19 |
Family
ID=19803412
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19691919507 Expired DE1919507C3 (de) | 1968-04-23 | 1969-04-17 | Kondensatorüberladungsvorrichtung |
DE19691966847 Withdrawn DE1966847A1 (de) | 1968-04-23 | 1969-04-17 | Transistor |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19691919507 Expired DE1919507C3 (de) | 1968-04-23 | 1969-04-17 | Kondensatorüberladungsvorrichtung |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS509515B1 (es) |
AT (1) | AT301908B (es) |
BE (1) | BE731974A (es) |
CH (1) | CH511496A (es) |
DE (2) | DE1919507C3 (es) |
DK (1) | DK131253B (es) |
ES (2) | ES366285A1 (es) |
FR (1) | FR2011816A1 (es) |
GB (2) | GB1271154A (es) |
NL (1) | NL162500C (es) |
SE (1) | SE386299B (es) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8574629B2 (en) * | 2008-08-01 | 2013-11-05 | Anteis S.A. | Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356860A (en) * | 1964-05-08 | 1967-12-05 | Gen Micro Electronics Inc | Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation |
-
1968
- 1968-04-23 NL NL6805704A patent/NL162500C/xx active
-
1969
- 1969-04-17 DE DE19691919507 patent/DE1919507C3/de not_active Expired
- 1969-04-17 DE DE19691966847 patent/DE1966847A1/de not_active Withdrawn
- 1969-04-18 DK DK214469A patent/DK131253B/da unknown
- 1969-04-21 AT AT383569A patent/AT301908B/de not_active IP Right Cessation
- 1969-04-21 ES ES366285A patent/ES366285A1/es not_active Expired
- 1969-04-21 CH CH600269A patent/CH511496A/de not_active IP Right Cessation
- 1969-04-22 SE SE571169A patent/SE386299B/xx unknown
- 1969-04-23 GB GB2074369A patent/GB1271154A/en not_active Expired
- 1969-04-23 JP JP44031055A patent/JPS509515B1/ja active Pending
- 1969-04-23 BE BE731974D patent/BE731974A/xx unknown
- 1969-04-23 GB GB369171A patent/GB1271155A/en not_active Expired
- 1969-04-23 FR FR6912840A patent/FR2011816A1/fr not_active Withdrawn
-
1970
- 1970-12-31 ES ES386979A patent/ES386979A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DK131253B (da) | 1975-06-16 |
NL162500C (nl) | 1980-05-16 |
DE1919507B2 (es) | 1979-12-06 |
NL6805704A (es) | 1969-10-27 |
DK131253C (es) | 1975-11-17 |
DE1919507A1 (de) | 1969-11-20 |
ES386979A1 (es) | 1973-12-01 |
ES366285A1 (es) | 1971-05-01 |
JPS509515B1 (es) | 1975-04-14 |
GB1271155A (en) | 1972-04-19 |
AT301908B (de) | 1972-09-25 |
SE386299B (sv) | 1976-08-02 |
NL162500B (nl) | 1979-12-17 |
CH511496A (de) | 1971-08-15 |
DE1919507C3 (de) | 1982-06-09 |
BE731974A (es) | 1969-10-23 |
GB1271154A (en) | 1972-04-19 |
FR2011816A1 (es) | 1970-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |