DE19534922C1 - Prodn. of tri:chloro:silane - Google Patents
Prodn. of tri:chloro:silaneInfo
- Publication number
- DE19534922C1 DE19534922C1 DE19534922A DE19534922A DE19534922C1 DE 19534922 C1 DE19534922 C1 DE 19534922C1 DE 19534922 A DE19534922 A DE 19534922A DE 19534922 A DE19534922 A DE 19534922A DE 19534922 C1 DE19534922 C1 DE 19534922C1
- Authority
- DE
- Germany
- Prior art keywords
- reactor
- silicon
- trichlorosilane
- gas
- tetrachlorosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title 1
- 125000001309 chloro group Chemical group Cl* 0.000 title 1
- 229910000077 silane Inorganic materials 0.000 title 1
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 20
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 20
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000012495 reaction gas Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Abstract
Description
Gegenstand der Erfindung ist die Herstellung von Trichlorsilan durch Reduktion von Tetrachlorsilan in einem Fließbett-Reaktor und daraus hergestelltes Silicium.The invention relates to the production of Trichlorosilane through reduction of tetrachlorosilane in one Fluid bed reactor and silicon made from it.
Tetrachlorsilan ist eine chemische Verbindung, die insbesondere bei der Abscheidung von Reinstsilicium durch thermische Zerlegung von Trichlorsilan entsteht. Sie fällt auch als Nebenprodukt bei der Herstellung von Trichlorsilan an, das durch Umsetzung von Chlorwasserstoff und Silicium im Fließbett-Reaktor gewonnen wird. Große Mengen des industriell erzeugten Tetrachlorsilans werden für die Reinstsilicium-Produktion zu Trichlorsilan reduziert. Gemäß der US-4,526,769 wird das Verfahren in einem Fließbett- Reaktor durchgeführt, wobei die folgende, reversible Reaktionsgleichung anzusetzen ist:Tetrachlorosilane is a chemical compound that especially when depositing ultra-pure silicon Thermal decomposition of trichlorosilane occurs. she falls also as a by-product in the production of trichlorosilane to that by reacting hydrogen chloride and silicon in the Fluid bed reactor is obtained. Large amounts of industrially produced tetrachlorosilanes are used for Ultrapure silicon production reduced to trichlorosilane. According to US 4,526,769 describes the process in a fluidized bed Reactor carried out, the following being reversible Apply the reaction equation:
3SiCl₄ + 2H₂ + Si ↔ 4HSiCl₃.3SiCl₄ + 2H₂ + Si ↔ 4HSiCl₃.
In der Patentschrift ist angegeben, daß der Umsatz von Tetrachlorsilan insbesondere von der Reaktionstemperatur, dem eingestellten Verhältnis von Tetrachlorsilan zu Wasserstoff und der Anwesenheit eines Katalysators aus Kupferchlorid abhängig ist. The patent states that the turnover of Tetrachlorosilane especially from the reaction temperature, the set ratio of tetrachlorosilane Hydrogen and the presence of a catalyst Copper chloride is dependent.
In der deutschen Auslegeschrift 1 935 895 wird ein Verfahren zur Herstellung von Trichlorsilan beansprucht, bei dem ein Gemisch von Tetrachlorsilan und Wasserstoff in Gegenwart von Silicium oder silicium-haltigen Metallen als Chlorwasserstoff bindendes Mittel bei Temperaturen von 700 bis 1400°C umgesetzt wird.A procedure is described in German Auslegeschrift 1 935 895 claimed for the production of trichlorosilane, in which a Mixture of tetrachlorosilane and hydrogen in the presence of Silicon or silicon-containing metals as Hydrogen chloride binding agent at temperatures of 700 up to 1400 ° C is implemented.
In den Patents Abstracts of Japan Sekt. C Vol. 8 (1984) Nr. 134 (C-230), die sich auf die JP-59-45919A bezieht, ist ein Verfahren zur Herstellung von Trichlorsilan beschrieben, bei dem ein Tetrachlorsilan und Wasserstoff enthaltendes Gasgemisch in einen Fließbett-Reaktor geleitet wird, der mit Silicium-Pulver beladen ist.In the Patents Abstracts of Japan Sekt. C Vol. 8 (1984) No. 134 (C-230) referring to JP-59-45919A is a Process for the preparation of trichlorosilane described in which contains a tetrachlorosilane and hydrogen Gas mixture is passed into a fluidized bed reactor with Silicon powder is loaded.
In den Patent Abstracts of Japan Sekt. C, Vol. 6 (1982) Nr. 239 (C-137), die sich auf die JP-57-140311 A und JP-57- 1403 12 A beziehen, ist ein Verfahren zur Herstellung von Trichlorsilan beschrieben, bei dem ein Tetrachlorsilan und Wasserstoff enthaltendes Gasgemisch in einen Fließbett- Reaktor geleitet wird, der mit Silicium-Partikeln beladen ist. Nicht umgesetztes Tetrachlorsilan, Wasserstoff und Chlorwasserstoff werden vom Produktgas isoliert und in den Fließbett-Reaktor zurückgeleitet.In Patent Abstracts of Japan Sekt. C, Vol. 6 (1982) No. 239 (C-137), referring to JP-57-140311 A and JP-57- 1403 12 A is a process for the production of Trichlorosilane described in which a tetrachlorosilane and Gas mixture containing hydrogen into a fluidized bed Reactor is passed, which is loaded with silicon particles is. Unreacted tetrachlorosilane, hydrogen and Hydrogen chloride is isolated from the product gas and in the Fluid bed reactor returned.
Die Aufgabe der vorliegenden Erfindung ist, das Verfahren zur Herstellung von Trichlorsilan im Fließbett-Reaktor zu verbessern und eine Umsatzsteigerung zu erzielen sowie hochreines Silicium daraus herzustellen. The object of the present invention is the method for the production of trichlorosilane in a fluidized bed reactor improve and increase sales as well to produce high-purity silicon from it.
Gelöst wird die Aufgabe durch ein Verfahren zur Herstellung von Trichlorsilan durch Reduktion von Tetrachlorsilan in einem Fließbett-Reaktor, wobei im Reaktor ein Fließbett aus Silicium-Partikeln eingerichtet wird, und ein Tetrachlorsilan und Wasserstoff enthaltendes Reaktionsgas durch das Fließbett geleitet und mit den Silicium-Partikeln zur Reaktion gebracht wird und ein Produktgas entsteht, das Trichlorsilan enthält, und das Produktgas aus dem Fließbett- Reaktor entfernt wird, das dadurch gekennzeichnet ist, daß die Silicium-Partikel durch Einstrahlen von Mikrowellenstrahlung in den Reaktor auf eine Temperatur von 300 bis 1100°C erhitzt werden.The task is solved by a manufacturing process of trichlorosilane by reduction of tetrachlorosilane in a fluidized bed reactor, wherein a fluidized bed in the reactor Silicon particles is set up, and a Tetrachlorosilane and hydrogen containing reaction gas passed through the fluidized bed and with the silicon particles is reacted and a product gas is generated which Contains trichlorosilane, and the product gas from the fluidized bed Reactor is removed, which is characterized in that the silicon particles by irradiating Microwave radiation in the reactor to a temperature of 300 to 1100 ° C are heated.
Die Herstellung von Trichlorsilan gelingt nach dem Verfahren mit verbesserten Umsätzen und niedrigerem Energieaufwand. Auf die Verwendung eines das Produkt kontaminierenden Katalysators aus Kupferchlorid kann verzichtet werden.Trichlorosilane can be produced using the process with improved sales and lower energy consumption. On the use of a contaminating product Copper chloride catalyst can be dispensed with.
Die Energieersparnis ergibt sich vor allem dadurch, daß die Mikrowellenstrahlung direkt mit den Silicium-Teilchen in Wechselwirkung tritt und sie auf die Reaktionstemperatur aufheizt, ohne daß Reaktorwand und Reaktionsgas miterhitzt werden müssen. Dadurch wird auch das Reaktormaterial geschont, so daß längere Betriebszeiten möglich sind oder an das Reaktormaterial bezüglich dessen Korrosionsbeständigkeit geringere Anforderungen gestellt werden können.The energy saving results primarily from the fact that the Microwave radiation directly with the silicon particles in Interaction occurs and they reach the reaction temperature heats up without the reactor wall and reaction gas being heated Need to become. This will also make the reactor material spared, so that longer operating times are possible or on the reactor material with regard to its corrosion resistance lower requirements can be made.
Das Fließbett wird eingerichtet, indem mit einem bestimmten Druck Reaktionsgas oder gegebenenfalls Inertgas oder Wasserstoff von unten durch eine Schüttung der in den Reaktor eingebrachten Silicium-Partikel gepreßt wird. Die Silicium-Partikel werden durch Einstrahlen von Mikrowellen auf die Reaktionstemperatur gebracht. Dieser Vorgang kann gegebenenfalls beschleunigt werden, indem das durch die Schüttung der Silicium-Partikel geleitete Gas vorerhitzt ist. Die Konvertierungs-Reaktion setzt ein, wenn die Silicium-Partikel die notwendige Reaktionstemperatur von 300 bis 1100°C, bevorzugt 500 bis 700°C besitzen und Reaktionsgas mit einer Temperatur von 20°C bis 50°C durch die Schüttung geleitet wird.The fluid bed is set up by using a specific one Pressure reaction gas or optionally inert gas or Hydrogen from below through a fill of the Reactor introduced silicon particles is pressed. The Silicon particles are created by microwave radiation brought to the reaction temperature. This process can if necessary, be accelerated by the Bulk of silicon particles guided gas preheated is. The conversion reaction starts when the Silicon particles the necessary reaction temperature of 300 up to 1100 ° C, preferably 500 to 700 ° C and Reaction gas with a temperature of 20 ° C to 50 ° C by the bulk is directed.
Die Frequenz der zum Aufheizen eingesetzten Mikrowellenstrahlung beträgt 500 bis 5000 MHz, vorzugsweise 1000 bis 1500 MHz. Der mittlere Durchmesser der in den Reaktor eingebrachten Silicium-Partikel beträgt 50 bis 5000 µm, besonders bevorzugt 500 bis 3000 µm.The frequency of those used for heating Microwave radiation is 500 to 5000 MHz, preferably 1000 to 1500 MHz. The average diameter of the in Silicon particles introduced into the reactor is 50 to 5000 µm, particularly preferably 500 to 3000 µm.
Das Reaktionsgas enthält Tetrachlorsilan und Wasserstoff und gegebenenfalls ein, an der Reaktion nicht beteiligtes, Trägergas, beispielsweise Stickstoff oder Argon. Das Mol-Verhältnis Tetrachlorsilan zu Wasserstoff im Reaktionsgas ist 3 : 1 bis 1 : 10, bevorzugt 3 : 2 bis 5 : 3. Bei der Reaktion wird Tetrachlorsilan nicht vollständig umgesetzt, so daß das Produktgas, das den Reaktor verläßt, neben dem gewünschten Trichlorsilan noch Verbindungen des Reaktionsgases enthält. Es ist daher vorgesehen, das Trichlorsilan vom Produktgas zu trennen und das Restgas als Reaktionsgas wieder in den Reaktor zu leiten.The reaction gas contains tetrachlorosilane and hydrogen and if applicable, a person not involved in the reaction, Carrier gas, for example nitrogen or argon. The Molar ratio of tetrachlorosilane to hydrogen in Reaction gas is 3: 1 to 1:10, preferably 3: 2 to 5: 3 the reaction does not complete tetrachlorosilane implemented so that the product gas leaving the reactor in addition to the desired trichlorosilane, compounds of Contains reaction gas. It is therefore intended that Separate trichlorosilane from the product gas and the residual gas as Feed the reaction gas back into the reactor.
Da Silicium gemäß der oben angegebenen Reaktionsgleichung bei der Reduktion des Tetrachlorsilans verbraucht wird, ist weiterhin vorgesehen, den Siliciumverbrauch kontinuierlich oder absatzweise auszugleichen. Vorzugsweise werden Silicium-Partikel dem Reaktor in Abhängigkeit des reaktionsbedingten Siliciumverbrauchs kontinuierlich zugeführt. Das aus dem Produktgas abgetrennte Trichlorsilan wird vorzugsweise für die Herstellung von Reinstsilicium verwendet, wobei diese Herstellung besonders bevorzugt nach dem Siemens-Prozeß oder nach einem Verfahren erfolgt, das in der US-4,900,411 erstmals beschrieben worden ist.Since silicon according to the reaction equation given above is consumed in the reduction of tetrachlorosilane continued to provide silicon consumption continuously or to compensate in paragraphs. Preferably be Silicon particles depending on the reactor reaction-related silicon consumption continuously fed. The trichlorosilane separated from the product gas is preferred for the production of high-purity silicon used, this production particularly preferably after the Siemens process or according to a procedure that in US 4,900,411 has been described for the first time.
Die in diesem Patent und in der US-5,382,412 gezeigten Vorrichtungen zur Herstellung von polykristallinem Silicium können prinzipiell auch zur Durchführung des erfindungsgemäßen Verfahrens genützt werden. Auf sie wird deshalb hiermit ausdrücklich verwiesen. Selbstverständlich sind diese Vorrichtungen im Rahmen des üblichen Könnens eines Fachmanns an die Erfordernisse des Verfahrens anzupassen. Dies beinhaltet beispielsweise den Verzicht auf eine Einrichtung zur Entnahme von Silicium-Partikeln aus dem Reaktor. Als vorteilhaft hat es sich auch erwiesen, wenn der untere Teil des Reaktors, der die Schüttung der Silicium- Partikel aufnimmt, sich konisch verjüngend ausgebildet ist.Those shown in this patent and in US 5,382,412 Devices for the production of polycrystalline silicon can in principle also be used to carry out the be used method according to the invention. On it will therefore hereby expressly referred. Of course these devices are within the ordinary skill of a person skilled in the art to the requirements of the method adapt. This includes, for example, waiving a device for removing silicon particles from the Reactor. It has also proven to be advantageous if the lower part of the reactor, which is the bed of silicon Takes up particles, is conically tapered.
Umgekehrt kann die Erfindung auch verwendet werden, um Vorrichtungen zur Herstellung von polykristallinem Silicium von unerwünschten Silicium-Abscheidungen zu reinigen. In diesem Fall wird kein Fließbett benötigt, da die Abscheidungen an die Stelle der Silicium-Partikel treten und das für den Ablauf der Reaktion notwendige Silicium liefern.Conversely, the invention can also be used to Devices for the production of polycrystalline silicon to remove unwanted silicon deposits. In In this case, no fluid bed is required because the Deposits take the place of the silicon particles and the silicon necessary for the reaction to proceed deliver.
Claims (4)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19534922A DE19534922C1 (en) | 1995-09-21 | 1995-09-21 | Prodn. of tri:chloro:silane |
IT96RM000596A IT1284881B1 (en) | 1995-09-21 | 1996-08-27 | PROCEDURE FOR THE PRODUCTION OF TRICHLOROSILANE |
KR1019960039747A KR970015462A (en) | 1995-09-21 | 1996-09-13 | Method for producing trichlorosilane |
JP8246444A JP2890253B2 (en) | 1995-09-21 | 1996-09-18 | Method for producing trichlorosilane |
CA002185981A CA2185981A1 (en) | 1995-09-21 | 1996-09-19 | Process for preparing trichlorosilane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19534922A DE19534922C1 (en) | 1995-09-21 | 1995-09-21 | Prodn. of tri:chloro:silane |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19534922C1 true DE19534922C1 (en) | 1997-02-20 |
Family
ID=7772678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19534922A Expired - Fee Related DE19534922C1 (en) | 1995-09-21 | 1995-09-21 | Prodn. of tri:chloro:silane |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2890253B2 (en) |
KR (1) | KR970015462A (en) |
CA (1) | CA2185981A1 (en) |
DE (1) | DE19534922C1 (en) |
IT (1) | IT1284881B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0896952A1 (en) * | 1997-08-14 | 1999-02-17 | Wacker-Chemie GmbH | Process for preparing high-purity silicium granules |
WO2003087107A2 (en) * | 2002-04-17 | 2003-10-23 | Wacker-Chemie Gmbh | Method for producing halosilanes by impinging microwave energy |
DE102007041803A1 (en) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Process for producing polycrystalline silicon rods and polycrystalline silicon rod |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100333351B1 (en) * | 2000-04-26 | 2002-04-19 | 박종섭 | Data level stabilizer |
AU2007328405B2 (en) * | 2006-12-01 | 2012-10-11 | Prochimie International, Llc | Process for preparation of alkoxys i lan es |
JP4620694B2 (en) * | 2007-01-31 | 2011-01-26 | 株式会社大阪チタニウムテクノロジーズ | Method for producing high purity trichlorosilane |
JP4714196B2 (en) * | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | Method for producing trichlorosilane and method for producing polycrystalline silicon |
KR101117290B1 (en) * | 2009-04-20 | 2012-03-20 | 에이디알엠테크놀로지 주식회사 | Conversion reactor for making trichlorosilane gas |
JP5535679B2 (en) | 2010-02-18 | 2014-07-02 | 株式会社トクヤマ | Method for producing trichlorosilane |
JP6288626B2 (en) * | 2014-08-28 | 2018-03-07 | 東亞合成株式会社 | Method for producing trichlorosilane |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1935895B2 (en) * | 1969-07-15 | 1971-06-03 | Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt | METHOD OF MANUFACTURING SILICO CHLOROFORM |
US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
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1995
- 1995-09-21 DE DE19534922A patent/DE19534922C1/en not_active Expired - Fee Related
-
1996
- 1996-08-27 IT IT96RM000596A patent/IT1284881B1/en active IP Right Grant
- 1996-09-13 KR KR1019960039747A patent/KR970015462A/en not_active Application Discontinuation
- 1996-09-18 JP JP8246444A patent/JP2890253B2/en not_active Expired - Lifetime
- 1996-09-19 CA CA002185981A patent/CA2185981A1/en not_active Abandoned
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DE1935895B2 (en) * | 1969-07-15 | 1971-06-03 | Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt | METHOD OF MANUFACTURING SILICO CHLOROFORM |
US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
Non-Patent Citations (3)
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JP 57-1 40 311 A. In: Patents Abstr. of Japan, Sekt. C, Vol. 6(1982) Nr. 239(C-137) * |
JP 57-1 40 312 A. In: Patents Abstr. of Japan, Sekt. C, Vol. 6(1982) Nr. 239(C-137) * |
JP 59-45 919 A. In: Patents Abstr. of Japan, Sekt. C, Vol. 8(1984) Nr. 134 (C-230) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0896952A1 (en) * | 1997-08-14 | 1999-02-17 | Wacker-Chemie GmbH | Process for preparing high-purity silicium granules |
WO2003087107A2 (en) * | 2002-04-17 | 2003-10-23 | Wacker-Chemie Gmbh | Method for producing halosilanes by impinging microwave energy |
WO2003087107A3 (en) * | 2002-04-17 | 2003-12-04 | Wacker Chemie Gmbh | Method for producing halosilanes by impinging microwave energy |
US7265235B2 (en) | 2002-04-17 | 2007-09-04 | Wacker Chemie Ag | Method for producing halosilanes by impinging microwave energy |
DE102007041803A1 (en) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Process for producing polycrystalline silicon rods and polycrystalline silicon rod |
Also Published As
Publication number | Publication date |
---|---|
CA2185981A1 (en) | 1997-03-22 |
ITRM960596A1 (en) | 1998-02-27 |
JPH09118512A (en) | 1997-05-06 |
JP2890253B2 (en) | 1999-05-10 |
IT1284881B1 (en) | 1998-05-22 |
KR970015462A (en) | 1997-04-28 |
ITRM960596A0 (en) | 1996-08-27 |
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