DE112017003255A5 - Optoelektronischer Halbleiterkörper und Leuchtdiode - Google Patents

Optoelektronischer Halbleiterkörper und Leuchtdiode Download PDF

Info

Publication number
DE112017003255A5
DE112017003255A5 DE112017003255.5T DE112017003255T DE112017003255A5 DE 112017003255 A5 DE112017003255 A5 DE 112017003255A5 DE 112017003255 T DE112017003255 T DE 112017003255T DE 112017003255 A5 DE112017003255 A5 DE 112017003255A5
Authority
DE
Germany
Prior art keywords
light emitting
emitting diode
semiconductor body
optoelectronic semiconductor
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112017003255.5T
Other languages
English (en)
Inventor
Werner Bergbauer
Joachim Hertkorn
Alexander Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112017003255A5 publication Critical patent/DE112017003255A5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE112017003255.5T 2016-06-29 2017-06-26 Optoelektronischer Halbleiterkörper und Leuchtdiode Pending DE112017003255A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016111929.6 2016-06-29
DE102016111929.6A DE102016111929A1 (de) 2016-06-29 2016-06-29 Optoelektronischer Halbleiterkörper und Leuchtdiode
PCT/EP2017/065708 WO2018001961A1 (de) 2016-06-29 2017-06-26 Optoelektronischer halbleiterkörper und leuchtdiode

Publications (1)

Publication Number Publication Date
DE112017003255A5 true DE112017003255A5 (de) 2019-03-21

Family

ID=59215788

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102016111929.6A Withdrawn DE102016111929A1 (de) 2016-06-29 2016-06-29 Optoelektronischer Halbleiterkörper und Leuchtdiode
DE112017003255.5T Pending DE112017003255A5 (de) 2016-06-29 2017-06-26 Optoelektronischer Halbleiterkörper und Leuchtdiode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102016111929.6A Withdrawn DE102016111929A1 (de) 2016-06-29 2016-06-29 Optoelektronischer Halbleiterkörper und Leuchtdiode

Country Status (3)

Country Link
US (2) US11018281B2 (de)
DE (2) DE102016111929A1 (de)
WO (1) WO2018001961A1 (de)

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69636088T2 (de) * 1995-11-06 2006-11-23 Nichia Corp., Anan Halbleitervorrichtung aus einer Nitridverbindung
JPH1168158A (ja) * 1997-08-20 1999-03-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
US6396861B1 (en) * 1999-01-11 2002-05-28 The Furukawa Electric Co., Ltd. N-type modulation-doped multi quantum well semiconductor laser device
DE19955747A1 (de) * 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6858882B2 (en) * 2000-09-08 2005-02-22 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
JP3864735B2 (ja) * 2000-12-28 2007-01-10 ソニー株式会社 半導体発光素子およびその製造方法
US7095051B2 (en) * 2001-03-28 2006-08-22 Nichia Corporation Nitride semiconductor element
KR100597532B1 (ko) * 2001-11-05 2006-07-10 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
US20070290230A1 (en) * 2003-09-25 2007-12-20 Yasutoshi Kawaguchi Nitride Semiconductor Device And Production Method Thereof
US7138648B2 (en) * 2003-12-17 2006-11-21 Palo Alto Research Center Incorporated Ultraviolet group III-nitride-based quantum well laser diodes
KR100456063B1 (ko) * 2004-02-13 2004-11-10 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자
KR100558455B1 (ko) * 2004-06-25 2006-03-10 삼성전기주식회사 질화물 반도체 소자
JP3857295B2 (ja) * 2004-11-10 2006-12-13 三菱電機株式会社 半導体発光素子
JP2007019277A (ja) * 2005-07-07 2007-01-25 Rohm Co Ltd 半導体発光素子
KR100753518B1 (ko) * 2006-05-23 2007-08-31 엘지전자 주식회사 질화물계 발광 소자
DE102006057747B4 (de) 2006-09-27 2015-10-15 Osram Opto Semiconductors Gmbh Halbleiterkörper und Halbleiterchip mit einem Halbleiterkörper
KR101330898B1 (ko) * 2007-04-05 2013-11-18 엘지전자 주식회사 반도체 레이저 다이오드
TWI466314B (zh) * 2008-03-05 2014-12-21 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體
KR101000279B1 (ko) * 2008-04-15 2010-12-10 우리엘에스티 주식회사 비대칭적 단위 유닛으로 구성된 클래드층을 이용한발광소자
JP4572963B2 (ja) * 2008-07-09 2010-11-04 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子、及びエピタキシャルウエハ
US8143614B2 (en) * 2009-04-22 2012-03-27 Dr. Samal's Lab LLC GaN based light emitters with band-edge aligned carrier blocking layers
EP2408028B1 (de) * 2010-07-16 2015-04-08 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung
US8648384B2 (en) * 2011-07-25 2014-02-11 Lg Innotek Co., Ltd. Light emitting device
CN103650173A (zh) * 2011-07-29 2014-03-19 三星电子株式会社 半导体发光器件
KR101976455B1 (ko) * 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US9087946B2 (en) * 2012-10-26 2015-07-21 Epistar Corporation Light emitting device
JP2014160739A (ja) * 2013-02-19 2014-09-04 Sony Corp 半導体発光素子および製造方法
KR20140117117A (ko) * 2013-03-26 2014-10-07 인텔렉추얼디스커버리 주식회사 질화물 반도체 발광소자
US20140320299A1 (en) * 2013-04-25 2014-10-30 Alcatel-Lucent Usa, Inc. Protection device and power distribution unit including the same
KR102053388B1 (ko) * 2013-06-11 2019-12-06 엘지이노텍 주식회사 발광소자
JP2015119171A (ja) * 2013-11-13 2015-06-25 スタンレー電気株式会社 多重量子井戸半導体発光素子
KR102237111B1 (ko) * 2014-07-28 2021-04-08 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102227772B1 (ko) * 2014-08-19 2021-03-16 삼성전자주식회사 반도체 발광소자
JP6306200B2 (ja) * 2014-09-22 2018-04-04 シャープ株式会社 窒化物半導体発光素子
KR102264671B1 (ko) * 2014-09-30 2021-06-15 서울바이오시스 주식회사 자외선 발광소자
DE102016122147B4 (de) * 2016-11-17 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
US11063178B2 (en) * 2017-10-25 2021-07-13 Sensor Electronic Technology, Inc. Semiconductor heterostructure with improved light emission

Also Published As

Publication number Publication date
US20210265531A1 (en) 2021-08-26
US11018281B2 (en) 2021-05-25
WO2018001961A1 (de) 2018-01-04
US11677045B2 (en) 2023-06-13
US20190229239A1 (en) 2019-07-25
DE102016111929A1 (de) 2018-01-04

Similar Documents

Publication Publication Date Title
DE112017003576A5 (de) Halbleiterlaserdiode
EP3353822C0 (de) Compact light emitting diode chip
EP3276683A4 (de) Gehäuse für eine lichtemittierende diode und beleuchtungssystem
DE112015004033A5 (de) Optoelektronisches Halbleiterbauteil und Blitzlicht
FI3323146T3 (fi) Valodiodipohjaisen valaistuslaitteen käyttö desinfiointiin
FR3031238B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
FR3028672B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
EP3716346C0 (de) Gehäuse in chip-grösse für lichtemittierende diode
DK3413361T3 (da) Lysemitterende diode-lyskilde og -lampe
JP2014209603A5 (ja) 発光素子及び化合物
DE112018000940A5 (de) Strahlungsemittierendes optoelektronisches bauelement
EP3675186A4 (de) Led-chip
FR3046705B1 (fr) Source laser a semi-conducteur
DE112015000938A5 (de) Laserdiodenchip
DE112015005448A5 (de) Halbleiterschichtenfolge zur Erzeugung von sichtbarem Licht und Leuchtdiode
DE112018000553A5 (de) Optoelektronischer Halbleiterchip
FR3053538B1 (fr) Source laser a semi-conducteur
EP3333908A4 (de) Leuchtdiode und gehäuse für leuchtdiode
DE112014001884A5 (de) Lichtemittierendes Halbleiterbauelement
DE112017004053A5 (de) Optoelektronischer Halbleiterchip
DE112017002987A5 (de) Optoelektronisches halbleiterbauelement
EP3428979A4 (de) Lichtemittierendes halbleiterbauelement
DE112016005129A5 (de) Halbleiterlaserdiode
DE112017003107A5 (de) Halbleiterlichtquelle
EP3301733A4 (de) Substrat mit organischer lichtemittierenden diode und vorrichtung mit organischer lichtemittierender diode

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication