DE112015004951A5 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

Info

Publication number
DE112015004951A5
DE112015004951A5 DE112015004951.7T DE112015004951T DE112015004951A5 DE 112015004951 A5 DE112015004951 A5 DE 112015004951A5 DE 112015004951 T DE112015004951 T DE 112015004951T DE 112015004951 A5 DE112015004951 A5 DE 112015004951A5
Authority
DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
optoelectronic
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112015004951.7T
Other languages
English (en)
Inventor
Fabian Kopp
Christian Eichinger
Korbinian Perzlmaier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112015004951A5 publication Critical patent/DE112015004951A5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE112015004951.7T 2014-10-29 2015-10-20 Optoelektronischer Halbleiterchip Pending DE112015004951A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014115740.0A DE102014115740A1 (de) 2014-10-29 2014-10-29 Optoelektronischer Halbleiterchip
DE102014115740.0 2014-10-29
PCT/EP2015/074258 WO2016066477A1 (de) 2014-10-29 2015-10-20 Optoelektronischer halbleiterchip

Publications (1)

Publication Number Publication Date
DE112015004951A5 true DE112015004951A5 (de) 2017-07-27

Family

ID=54337281

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102014115740.0A Withdrawn DE102014115740A1 (de) 2014-10-29 2014-10-29 Optoelektronischer Halbleiterchip
DE112015004951.7T Pending DE112015004951A5 (de) 2014-10-29 2015-10-20 Optoelektronischer Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102014115740.0A Withdrawn DE102014115740A1 (de) 2014-10-29 2014-10-29 Optoelektronischer Halbleiterchip

Country Status (6)

Country Link
US (1) US10079329B2 (de)
JP (1) JP2017533591A (de)
KR (1) KR102455387B1 (de)
CN (1) CN107078191B (de)
DE (2) DE102014115740A1 (de)
WO (1) WO2016066477A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015107577A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102016105056A1 (de) 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN108417679A (zh) * 2018-03-20 2018-08-17 澳洋集团有限公司 高出光率的led芯片和高出光率led器件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1149723C (zh) * 2000-03-21 2004-05-12 广州亮达光电器件有限公司 电子布拉格反射器及其在发光二极管中的应用
JP4453515B2 (ja) 2004-10-22 2010-04-21 豊田合成株式会社 半導体発光素子
JP5048960B2 (ja) 2006-03-20 2012-10-17 パナソニック株式会社 半導体発光素子
TWI452716B (zh) 2007-06-08 2014-09-11 Formosa Epitaxy Inc Gallium nitride based light emitting diode and manufacturing method thereof
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
DE102007057672A1 (de) 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP5719110B2 (ja) * 2009-12-25 2015-05-13 日亜化学工業株式会社 発光素子
KR20120042500A (ko) * 2010-10-25 2012-05-03 삼성엘이디 주식회사 반도체 발광 소자 및 그 제조방법
DE112011103819T5 (de) * 2010-11-18 2013-08-22 Seoul Opto Device Co., Ltd. Lichtemittierender Diodenchip mit Elektrodenfeld
JP2012124306A (ja) * 2010-12-08 2012-06-28 Toyoda Gosei Co Ltd 半導体発光素子
JP2012146926A (ja) * 2011-01-14 2012-08-02 Rohm Co Ltd 発光素子、発光素子ユニットおよび発光素子パッケージ
CN102683532B (zh) 2011-03-11 2015-02-18 山东华光光电子有限公司 一种含有图形化dbr结构的衬底
CN102738330B (zh) 2011-04-01 2014-11-26 山东华光光电子有限公司 一种高白光光效氮化镓led管芯结构
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
JP5652358B2 (ja) * 2011-09-08 2015-01-14 豊田合成株式会社 半導体発光素子、ランプおよび半導体発光素子の製造方法
EP2784832B1 (de) * 2012-01-13 2019-03-27 Semicon Light Co. Ltd. Lichtemittierende halbleitervorrichtung
KR102087933B1 (ko) * 2012-11-05 2020-04-14 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 어레이
KR20140076204A (ko) * 2012-12-12 2014-06-20 서울바이오시스 주식회사 발광다이오드 및 그 제조방법
WO2014126016A1 (ja) * 2013-02-12 2014-08-21 エルシード株式会社 Ｌｅｄ素子及びその製造方法

Also Published As

Publication number Publication date
WO2016066477A1 (de) 2016-05-06
DE102014115740A1 (de) 2016-05-04
US10079329B2 (en) 2018-09-18
CN107078191B (zh) 2019-07-26
US20170324005A1 (en) 2017-11-09
JP2017533591A (ja) 2017-11-09
KR102455387B1 (ko) 2022-10-14
CN107078191A (zh) 2017-08-18
KR20170074239A (ko) 2017-06-29

Similar Documents

Publication Publication Date Title
DE112016001960A5 (de) Strahlungsemittierendes optoelektronisches Bauelement
FI20150334A (fi) Paranneltu puolijohdekokoonpano
DE112017003450A5 (de) Strahlungsemittierender Halbleiterchip
DE112015004474A5 (de) Optoelektronisches Bauelement
DE112015000703A5 (de) Optoelektronisches Halbleiterbauelement
DE112015002796A5 (de) Optoelektronischer Halbleiterchip
DE112015000938A5 (de) Laserdiodenchip
DE102018212047A8 (de) Halbleitermodul
DE112015002763A5 (de) Optoelektronisches Halbleiterbauteil
DE112015005885A5 (de) Optoelektronisches Bauelement
DE112018000553A5 (de) Optoelektronischer Halbleiterchip
DE112017004053A5 (de) Optoelektronischer Halbleiterchip
DE112016000316A5 (de) Optoelektronisches Bauelement
DE112017006349A5 (de) Optoelektronisches bauelement
DE112017006351A5 (de) Optoelektronisches bauelement
DE112017002987A5 (de) Optoelektronisches halbleiterbauelement
DE102017110821A8 (de) Halbleitervorrichtung
DE112014003318A5 (de) Optoelektronischer Halbleiterchip
DE112016001422A5 (de) Optoelektronischer Halbleiterchip
DE102014216974A8 (de) Thermoelektrisches Modul
DE112016005129A5 (de) Halbleiterlaserdiode
DE112014000439A5 (de) Optoelektronischer Halbleiterchip
DE112015004123A5 (de) Optoelektronisches Bauteil
DE112015002642A5 (de) Optoelektronisches Bauelement
DE112015004951A5 (de) Optoelektronischer Halbleiterchip

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication