DE112015004781A5 - Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung - Google Patents

Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung Download PDF

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Publication number
DE112015004781A5
DE112015004781A5 DE112015004781.6T DE112015004781T DE112015004781A5 DE 112015004781 A5 DE112015004781 A5 DE 112015004781A5 DE 112015004781 T DE112015004781 T DE 112015004781T DE 112015004781 A5 DE112015004781 A5 DE 112015004781A5
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electronic device
manufacturing
electronic
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Andreas Plössl
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
    • H01L2924/15724—Aluminium [Al] as principal constituent

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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
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  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Powder Metallurgy (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Device Packages (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112015004781.6T 2014-10-21 2015-09-17 Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung Granted DE112015004781A5 (de)

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DE102014115319A1 (de) * 2014-10-21 2016-04-21 Osram Opto Semiconductors Gmbh Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung
US10073294B1 (en) * 2017-03-31 2018-09-11 Innolux Corporation Display device
EP3382754B1 (de) * 2017-03-31 2021-06-30 InnoLux Corporation Anzeigevorrichtung
US10686158B2 (en) 2017-03-31 2020-06-16 Innolux Corporation Display device
DE102019126505B4 (de) * 2019-10-01 2023-10-19 Infineon Technologies Ag Verfahren zum herstellen einer mehrchipvorrichtung

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928995B2 (ja) 1974-09-24 1984-07-17 日本電気株式会社 半導体装置
EP0330895B1 (de) * 1988-03-03 1994-12-14 Siemens Aktiengesellschaft Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben
DE4233073A1 (de) 1992-10-01 1994-04-07 Siemens Ag Verfahren zum Herstellen eines Halbleiter-Modulaufbaus
US20090032293A1 (en) * 2005-03-23 2009-02-05 Hidenori Miyakawa Electroconductive Bonding Material and Electric/Electronic Device Using the Same
JP2007294899A (ja) 2006-03-31 2007-11-08 Dowa Electronics Materials Co Ltd 半田層及びそれを用いた電子デバイス接合用基板並びに電子デバイス接合用サブマウント
JP4361572B2 (ja) * 2007-02-28 2009-11-11 株式会社新川 ボンディング装置及び方法
JP2008258376A (ja) * 2007-04-04 2008-10-23 Canon Inc 回路素子実装モジュールの製造方法、回路素子実装モジュールの製造装置および回路素子実装モジュール
JP5139005B2 (ja) 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置
DE102008055138A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Hochtemperaturbeständige lötmittelfreie Bauelementstruktur und Verfahren zum elektrischen Kontaktieren
JP5611537B2 (ja) * 2009-04-28 2014-10-22 日立化成株式会社 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置
JP2011014556A (ja) * 2009-06-30 2011-01-20 Hitachi Ltd 半導体装置とその製造方法
DE102009040078A1 (de) * 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit CO-Vorläufern
JP2012089657A (ja) 2010-10-19 2012-05-10 Hitachi Cable Ltd 半導体装置用テープキャリア
EP2629910A1 (de) * 2010-10-20 2013-08-28 Robert Bosch GmbH Ausgangswerkstoff und verfahren zur herstellung einer sinterverbindung
US9553063B2 (en) * 2010-11-16 2017-01-24 Mitsubishi Electric Corporation Semiconductor element, semiconductor device and method for manufacturing semiconductor element
JP5202714B1 (ja) * 2011-11-18 2013-06-05 田中貴金属工業株式会社 金属配線形成用の転写基板及び前記転写用基板による金属配線の形成方法
JP2013131592A (ja) * 2011-12-21 2013-07-04 Mitsubishi Electric Corp リード端子およびこれを用いた半導体装置
US8716864B2 (en) * 2012-06-07 2014-05-06 Ixys Corporation Solderless die attach to a direct bonded aluminum substrate
WO2013185839A1 (de) * 2012-06-15 2013-12-19 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterbauelements mit einer unter einwirkung von wärme, druck und ultraschall versinterten verbindungsschicht
KR101998340B1 (ko) * 2012-07-18 2019-07-09 삼성전자주식회사 전력 소자 모듈 및 그 제조 방법
JP2014043382A (ja) 2012-08-27 2014-03-13 Toyota Central R&D Labs Inc 半導体装置とその製造方法
US9087833B2 (en) * 2012-11-30 2015-07-21 Samsung Electronics Co., Ltd. Power semiconductor devices
DE102013102667A1 (de) 2013-03-15 2014-10-02 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
DE102013204883A1 (de) * 2013-03-20 2014-09-25 Robert Bosch Gmbh Verfahren zur Kontaktierung eines elektrischen und/oder elektronischen Bauelements und korrespondierendes Elektronikmodul
DE102014114093B4 (de) * 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
DE102014115319A1 (de) * 2014-10-21 2016-04-21 Osram Opto Semiconductors Gmbh Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung

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JP2017535078A (ja) 2017-11-24
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