DE112015000814A5 - Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil - Google Patents
Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil Download PDFInfo
- Publication number
- DE112015000814A5 DE112015000814A5 DE112015000814.4T DE112015000814T DE112015000814A5 DE 112015000814 A5 DE112015000814 A5 DE 112015000814A5 DE 112015000814 T DE112015000814 T DE 112015000814T DE 112015000814 A5 DE112015000814 A5 DE 112015000814A5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- optoelectronic semiconductor
- producing
- optoelectronic
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014101896.6 | 2014-02-14 | ||
DE102014101896.6A DE102014101896A1 (de) | 2014-02-14 | 2014-02-14 | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil |
PCT/EP2015/051608 WO2015121062A1 (de) | 2014-02-14 | 2015-01-27 | Verfahren zur herstellung eines optoelektronischen halbleiterbauteils sowie optoelektronisches halbleiterbauteil |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112015000814A5 true DE112015000814A5 (de) | 2016-11-03 |
Family
ID=52396707
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102014101896.6A Withdrawn DE102014101896A1 (de) | 2014-02-14 | 2014-02-14 | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil |
DE112015000814.4T Pending DE112015000814A5 (de) | 2014-02-14 | 2015-01-27 | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102014101896.6A Withdrawn DE102014101896A1 (de) | 2014-02-14 | 2014-02-14 | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil |
Country Status (6)
Country | Link |
---|---|
US (1) | US9685591B2 (de) |
JP (1) | JP6345261B2 (de) |
KR (1) | KR102305162B1 (de) |
CN (1) | CN105993075B (de) |
DE (2) | DE102014101896A1 (de) |
WO (1) | WO2015121062A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014105999A1 (de) | 2014-04-29 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
DE102014112750A1 (de) | 2014-09-04 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
DE102015119353B4 (de) | 2015-11-10 | 2024-01-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102016104385A1 (de) | 2016-03-10 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Projektionsoptik, optoelektronischer Halbleiterchip, optoelektronisches Beleuchtungssystem, Kamera, Endgerät |
DE102016104383A1 (de) | 2016-03-10 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Verfahren und optoelektronische Leuchtvorrichtung zum Beleuchten eines Gesichts einer Person sowie Kamera und mobiles Endgerät |
DE102016104381A1 (de) | 2016-03-10 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Optoelektronische Leuchtvorrichtung, Verfahren zum Beleuchten einer Szene, Kamera sowie mobiles Endgerät |
DE102016220915A1 (de) | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
DE102019105402A1 (de) * | 2019-03-04 | 2020-09-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender halbleiterchip, strahlungsemittierendes halbleiterbauelement und scheinwerfer |
DE102020200621A1 (de) * | 2020-01-21 | 2021-07-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
DE102020112414A1 (de) | 2020-05-07 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Strahlung emittierenden Halbleiterbauelements |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4960665B2 (ja) * | 2006-08-11 | 2012-06-27 | キヤノン株式会社 | 発光素子アレイ及び画像形成装置 |
JP2003168823A (ja) * | 2001-09-18 | 2003-06-13 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
DE10147791A1 (de) | 2001-09-27 | 2003-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf der Basis eines Nitrid-Verbindungshalbleiters |
JP2005252086A (ja) * | 2004-03-05 | 2005-09-15 | Sony Corp | 半導体発光素子の製造方法、半導体発光素子、集積型半導体発光装置の製造方法、集積型半導体発光装置、画像表示装置の製造方法、画像表示装置、照明装置の製造方法および照明装置 |
JP2006041403A (ja) * | 2004-07-29 | 2006-02-09 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2007305708A (ja) | 2006-05-10 | 2007-11-22 | Rohm Co Ltd | 半導体発光素子アレイおよびこれを用いた照明用器具 |
KR100928259B1 (ko) * | 2007-10-15 | 2009-11-24 | 엘지전자 주식회사 | 발광 장치 및 그 제조방법 |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
DE102009023849B4 (de) * | 2009-06-04 | 2022-10-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip |
JP5326957B2 (ja) * | 2009-09-15 | 2013-10-30 | 豊田合成株式会社 | 発光素子の製造方法及び発光素子 |
DE102010025320B4 (de) * | 2010-06-28 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
KR101761385B1 (ko) * | 2010-07-12 | 2017-08-04 | 엘지이노텍 주식회사 | 발광 소자 |
CN102386200B (zh) * | 2010-08-27 | 2014-12-31 | 财团法人工业技术研究院 | 发光单元阵列与投影*** |
DE102010045784B4 (de) * | 2010-09-17 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
JP5050109B2 (ja) * | 2011-03-14 | 2012-10-17 | 株式会社東芝 | 半導体発光素子 |
DE102011016302A1 (de) * | 2011-04-07 | 2012-10-11 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
WO2012141031A1 (ja) * | 2011-04-11 | 2012-10-18 | 日亜化学工業株式会社 | 半導体発光素子及びその製造方法 |
DE102011056888A1 (de) | 2011-12-22 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
JP2013179215A (ja) * | 2012-02-29 | 2013-09-09 | Toyohashi Univ Of Technology | Ledアレイ及び光電子集積装置 |
US8816383B2 (en) | 2012-07-06 | 2014-08-26 | Invensas Corporation | High performance light emitting diode with vias |
-
2014
- 2014-02-14 DE DE102014101896.6A patent/DE102014101896A1/de not_active Withdrawn
-
2015
- 2015-01-27 WO PCT/EP2015/051608 patent/WO2015121062A1/de active Application Filing
- 2015-01-27 JP JP2016551750A patent/JP6345261B2/ja active Active
- 2015-01-27 DE DE112015000814.4T patent/DE112015000814A5/de active Pending
- 2015-01-27 KR KR1020167023748A patent/KR102305162B1/ko active IP Right Grant
- 2015-01-27 CN CN201580008703.1A patent/CN105993075B/zh active Active
- 2015-01-27 US US15/118,886 patent/US9685591B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6345261B2 (ja) | 2018-06-20 |
KR102305162B1 (ko) | 2021-09-28 |
JP2017510980A (ja) | 2017-04-13 |
KR20160123316A (ko) | 2016-10-25 |
CN105993075B (zh) | 2019-09-10 |
US20170062661A1 (en) | 2017-03-02 |
CN105993075A (zh) | 2016-10-05 |
US9685591B2 (en) | 2017-06-20 |
WO2015121062A1 (de) | 2015-08-20 |
DE102014101896A1 (de) | 2015-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE112015003999A5 (de) | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips | |
DE112016002417A5 (de) | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements | |
DE112016000691A5 (de) | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements | |
DE112015000814A5 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil | |
DE112014005954A5 (de) | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils | |
DE112015004073A5 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil | |
DE112016003199A5 (de) | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung | |
DE112015005495A5 (de) | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils | |
DE112014004180A5 (de) | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils | |
DE112016001544A5 (de) | Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips | |
DE112017001393A5 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip | |
DE112014004422A5 (de) | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements | |
DE112015000888A5 (de) | Verfahren zur Herstellung optoelektronischer Halbleiterbauteile und optoelektronisches Halbleiterbauteil | |
DE112015000824A5 (de) | Verfahren zur Herstellung eines elektronischen Halbleiterchips und elektronischer Halbleiterchip | |
DE112014002166A5 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip | |
DE112015001999A5 (de) | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements | |
DE112015002754A5 (de) | Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie Lichtquelle mit einem optoelektronischen Halbleiterbauelement | |
DE112016004575A5 (de) | Halbleiterlaser und Verfahren zur Herstellung eines Halbleiterlasers | |
DE112017002058A5 (de) | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement | |
DE112015004068A5 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements | |
DE112014005953A5 (de) | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements | |
DE112015005127A5 (de) | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils | |
DE112018001984A5 (de) | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement | |
DE112017000332A5 (de) | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements | |
DE112015003591A5 (de) | Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R016 | Response to examination communication |