DE112013002930A5 - Optoelektronisches Halbleiterbauelement - Google Patents

Optoelektronisches Halbleiterbauelement Download PDF

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Publication number
DE112013002930A5
DE112013002930A5 DE112013002930.8T DE112013002930T DE112013002930A5 DE 112013002930 A5 DE112013002930 A5 DE 112013002930A5 DE 112013002930 T DE112013002930 T DE 112013002930T DE 112013002930 A5 DE112013002930 A5 DE 112013002930A5
Authority
DE
Germany
Prior art keywords
semiconductor component
optoelectronic semiconductor
optoelectronic
component
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112013002930.8T
Other languages
English (en)
Other versions
DE112013002930B4 (de
Inventor
Angela Eberhardt
Christina Wille
Florian Peskoller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram GmbH filed Critical Osram GmbH
Publication of DE112013002930A5 publication Critical patent/DE112013002930A5/de
Application granted granted Critical
Publication of DE112013002930B4 publication Critical patent/DE112013002930B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
DE112013002930.8T 2012-06-15 2013-06-14 Optoelektronisches Halbleiterbauelement Active DE112013002930B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201210210083 DE102012210083A1 (de) 2012-06-15 2012-06-15 Optoelektronisches halbleiterbauelement
DE102012210083.0 2012-06-15
PCT/EP2013/062384 WO2013186365A1 (de) 2012-06-15 2013-06-14 Optoelektronisches halbleiterbauelement

Publications (2)

Publication Number Publication Date
DE112013002930A5 true DE112013002930A5 (de) 2015-04-23
DE112013002930B4 DE112013002930B4 (de) 2023-03-23

Family

ID=48626058

Family Applications (2)

Application Number Title Priority Date Filing Date
DE201210210083 Withdrawn DE102012210083A1 (de) 2012-06-15 2012-06-15 Optoelektronisches halbleiterbauelement
DE112013002930.8T Active DE112013002930B4 (de) 2012-06-15 2013-06-14 Optoelektronisches Halbleiterbauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE201210210083 Withdrawn DE102012210083A1 (de) 2012-06-15 2012-06-15 Optoelektronisches halbleiterbauelement

Country Status (5)

Country Link
US (1) US10297729B2 (de)
JP (1) JP6178413B2 (de)
CN (1) CN104365181B (de)
DE (2) DE102012210083A1 (de)
WO (1) WO2013186365A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101937241B1 (ko) * 2013-11-13 2019-01-11 나노코 테크놀로지스 리미티드 양자점 형광체를 함유하는 led 캡
DE102014107972B9 (de) * 2014-04-17 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtvorrichtung mit einem ersten Leuchtstoff und Filterpartikeln
CN104767011B (zh) * 2015-04-13 2017-06-13 西北工业大学 基于导电橡胶材料的温度可调带阻滤波器
DE102015113052A1 (de) * 2015-08-07 2017-02-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein Konversionselement, Verfahren zur Herstellung eines optoelektronischen Bauelements umfassend ein Konversionselement und Verwendung eines optoelektronischen Bauelements umfassend ein Konversionselement
CN106058022B (zh) * 2016-04-29 2018-11-09 青岛杰生电气有限公司 无机封装的发光装置及其封装方法
DE102016212070A1 (de) * 2016-07-04 2018-01-04 Osram Gmbh Beleuchtungseinrichtung und fahrzeugscheinwerfer mit beleuchtungseinrichtung
US10193030B2 (en) 2016-08-08 2019-01-29 General Electric Company Composite materials having red emitting phosphors
WO2018027920A1 (zh) * 2016-08-12 2018-02-15 深圳通感微电子有限公司 纳米材料发光器件及纳米材料发光器件的封装方法
DE102016124366A1 (de) * 2016-12-14 2018-06-14 Osram Gmbh Optoelektronisches Bauelement
DE102017101729A1 (de) * 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102017104135A1 (de) * 2017-02-28 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017104128A1 (de) 2017-02-28 2018-08-30 Osram Gmbh Konversionselement, optoelektronisches Bauelement und Verfahren zur Herstellung eines Konversionselements
DE102017104127A1 (de) * 2017-02-28 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017104130A1 (de) 2017-02-28 2018-08-30 Osram Gmbh Anorganische Reflexionsbeschichtung, optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017104134A1 (de) * 2017-02-28 2018-08-30 Osram Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US10727379B2 (en) * 2018-02-16 2020-07-28 Osram Opto Semiconductors Gmbh Methods for producing a conversion element and an optoelectronic component
DE102019210255A1 (de) * 2019-07-11 2021-01-14 Robert Bosch Gmbh Beleuchtungseinrichtung zum Abstrahlen von Licht mehrerer Wellenlängen, optische Analyseeinrichtung zum Beleuchten und Analysieren einer Probe und Verfahren zum Herstellen einer Beleuchtungseinrichtung
CN111087173B (zh) * 2019-12-30 2022-11-04 厦门天马微电子有限公司 一种负膨胀填料及其制备方法和应用

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US2697668A (en) * 1950-06-23 1954-12-21 Rca Corp Method for settling phosphor screens
JPS6055943B2 (ja) * 1978-10-25 1985-12-07 株式会社日立製作所 けい光面形成方法
US4490286A (en) * 1980-04-15 1984-12-25 Institut Fiziki Akademii Nauk Estonskoi Ssr Photochromic and/or cathodochromic sodalite material, method of its preparation, and sensing element of a variable light transmission device manufactured from such material
DE3330944C1 (de) 1983-08-27 1985-02-21 Boehringer Ingelheim International GmbH, 6507 Ingelheim Basisches Aluminiumphosphat-Gel,seine Herstellung und Verwendung
US5965469A (en) 1998-03-20 1999-10-12 Sandia Corporation High thermal expansion sealing glass for use in radio frequency applications
US6621211B1 (en) 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6461415B1 (en) * 2000-08-23 2002-10-08 Applied Thin Films, Inc. High temperature amorphous composition based on aluminum phosphate
DE10118630A1 (de) 2001-04-12 2002-10-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauelements
CN100386888C (zh) 2001-10-01 2008-05-07 松下电器产业株式会社 发光元件及使用它的发光装置
DE10159544A1 (de) 2001-12-05 2003-06-26 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauelementes und damit hergestelltes Bauelement
EP1500126A1 (de) * 2002-04-22 2005-01-26 Koninklijke Philips Electronics N.V. Lumineszenter schirm
DE10356334B4 (de) * 2003-11-28 2016-02-11 Sachtleben Chemie Gmbh Verwendung von thermoplastischen, polymeren Werkstoffen mit hoher IR-Absorption
CN100517781C (zh) * 2005-05-30 2009-07-22 夏普株式会社 发光器件及其制造方法
JP4930830B2 (ja) * 2006-07-27 2012-05-16 日亜化学工業株式会社 発光装置
CN101755345A (zh) 2007-07-19 2010-06-23 夏普株式会社 发光装置
US20120018761A1 (en) * 2009-03-27 2012-01-26 Konica Minolta Opto, Inc. Phosphor member, method of manufacturing phosphor member, and illuminating device
JP5614675B2 (ja) 2010-02-16 2014-10-29 独立行政法人物質・材料研究機構 波長変換部材の製造方法
JP5129283B2 (ja) 2010-03-09 2013-01-30 株式会社東芝 蛍光体、蛍光体の製造方法、発光装置及び発光モジュール
DE102010028776A1 (de) 2010-05-07 2011-11-10 Osram Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement
DE102010042217A1 (de) * 2010-10-08 2012-04-12 Osram Ag Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102012210195A1 (de) 2012-06-18 2013-12-19 Osram Gmbh Vorrichtung zum Bereitstellen elektromagnetischer Strahlung

Also Published As

Publication number Publication date
WO2013186365A1 (de) 2013-12-19
JP6178413B2 (ja) 2017-08-09
US20150123156A1 (en) 2015-05-07
DE112013002930B4 (de) 2023-03-23
CN104365181A (zh) 2015-02-18
DE102012210083A1 (de) 2013-12-19
JP2015521791A (ja) 2015-07-30
US10297729B2 (en) 2019-05-21
CN104365181B (zh) 2017-10-31

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Legal Events

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R012 Request for examination validly filed
R082 Change of representative

Representative=s name: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHA, DE

R081 Change of applicant/patentee

Owner name: OSRAM OPTO SEMICONDUCTORS GESELLSCHAFT MIT BES, DE

Free format text: FORMER OWNER: OSRAM GMBH, 80807 MUENCHEN, DE

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, DE

Free format text: FORMER OWNER: OSRAM GMBH, 80807 MUENCHEN, DE

R082 Change of representative

Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCH, DE

Representative=s name: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHA, DE

R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H05B0033140000

Ipc: H01L0033500000

R018 Grant decision by examination section/examining division
R020 Patent grant now final