DE1021488B - Layered semiconductor crystallode - Google Patents

Layered semiconductor crystallode

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Publication number
DE1021488B
DE1021488B DEB29787A DEB0029787A DE1021488B DE 1021488 B DE1021488 B DE 1021488B DE B29787 A DEB29787 A DE B29787A DE B0029787 A DEB0029787 A DE B0029787A DE 1021488 B DE1021488 B DE 1021488B
Authority
DE
Germany
Prior art keywords
semiconductor
crystallode
emitter
base
band gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEB29787A
Other languages
German (de)
Inventor
Dipl-Phys Alfons Haehnlein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deutsche Telekom AG
Original Assignee
Deutsche Telekom AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche Telekom AG filed Critical Deutsche Telekom AG
Priority to DEB29787A priority Critical patent/DE1021488B/en
Publication of DE1021488B publication Critical patent/DE1021488B/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Description

Halbleiter-Kristallode der Schichtenbauart Das Frequenzverhalten von Flächen-Halbleiter-Kristalloden, insbesondere Halbleiter-Kristalltrioden, aus einem einzigen Halbleitermaterial ist durch die Kapazitäten bestimmt. Physikalisch definierte Dotierungsverhältnisse der Halbleiter von Kollektor-Basis einerseits und Basis-Emitter andererseits erlauben es nicht, die Kapazitäten klein zu halten. Außerdem erzwingt das letztere ein für gute Injektionswirkung notwendiges Dotierungsverhältnis und damit ein Basishalbleitermaterial von etwa 0,6 bis 1 Ohmcm.Layered semiconductor crystal The frequency response of Surface semiconductor crystal electrodes, in particular semiconductor crystal triodes, from one single semiconductor material is determined by the capacities. Physically defined Doping ratios of the semiconductors of collector-base on the one hand and base-emitter on the other hand, they do not allow the capacities to be kept small. Also forces the latter a doping ratio necessary for a good injection effect and thus a base semiconductor material of about 0.6 to 1 ohm cm.

Die Erfindung bezieht sich auf eine Halbleiter-Kristallode der Schichtenbauart mit p-n-Verbindungen, bei der der Emitter-Halbleiter gegenüber dem Basis-Halbleiter einen größeren Bandabstand, d. h. eine größere Breite der verbotenen Zone, aufweist. Kristalloden dieser Gattungsart sind bereits bekannt. Nach der Erfindung wird eine solche Kristallode dadurch weitergebildet, daß der Basis-Halbleiter stärker dotiert ist als der Emitter-oder Kollektor-Halbleiter.The invention relates to a layered type semiconductor crystallode with p-n connections, in which the emitter semiconductor is opposite to the base semiconductor a larger band gap, d. H. a greater width of the forbidden zone. Crystallodes of this genus are already known. According to the invention, a such a crystallode is further developed in that the base semiconductor is more heavily doped is called the emitter or collector semiconductor.

Die bei den Halbleiter-Kristalloden nach der Erfindung verwendete starke Dotierung der Basisschicht ermöglicht weit geringere Basisdicken als bisher, ohne daß dadurch der Basiswiderstand unzulässig hoch wird. Zudem wird dadurch auch die störende Rückwirkung des Kollektors herabgesetzt. Da das Grenzfrequenzverhalten eines Transistors in der Hauptsache durch die Gleichung beschrieben wird, wobei f g die Grenzfrequenz, D die Diffusionskonstante, w die Basisdicke ist, so ist der Vorteil geringerer Basisdicken sofort ersichtlich.The heavy doping of the base layer used in the semiconductor crystallodes according to the invention enables much smaller base thicknesses than before without the base resistance becoming inadmissibly high as a result. In addition, this also reduces the disruptive reaction of the collector. Since the cutoff frequency behavior of a transistor is mainly determined by the equation is described, where fg is the cutoff frequency, D is the diffusion constant, w is the base thickness, the advantage of smaller base thicknesses is immediately apparent.

Die Erfindung ist nicht auf Halbleiter-Kristalldioden beschränkt, sondern kann mit besonderem Vorteil auch bei anderen Halbleiter-Kristalloden, insbesondere Halbleiter-Kristalltrioden, zum Einsatz kommen. Im Falle einer Halbleiter-Kristalltriode wird der Basis-Halbleiter durch eine Substanz mit niedrigem Bandabstand gebildet, während Emitter- und Kollektor-Halbleiter aus Substanzen mit hohem Bandabstand bestehen. Beispielsweise kann bei der Halbleiter-Kristallode nach der Erfindung eine Germaniumschicht an eine Siliziumschicht grenzen. Die Halbleiter-Kristallode kann zweckmäßig vom Typ Silizium-Germanium-Silizium sein, wenn es sich um eine Halbleiter-Kristalltriode handelt.The invention is not limited to semiconductor crystal diodes, but can also be used with particular advantage in the case of other semiconductor crystallodes, in particular Semiconductor crystal triodes are used. In the case of a semiconductor crystal triode the base semiconductor is formed by a substance with a low band gap, while emitter and collector semiconductors consist of substances with a high band gap. For example, a germanium layer can be used in the semiconductor crystallode according to the invention border on a silicon layer. The semiconductor crystallode can expediently from Type silicon-germanium-silicon if it is a semiconductor crystal triode acts.

Es ist auch möglich, die üblichen als Halbleiter zu verwenden, indem eine geeignete Verbindung dieser Art gegen Germanium oder Silizium benutzt wird. Gegebenenfalls kann der Basis-Halbleiter aus einer geeigneten AIIIBv-Verbindung gebildet werden, während Emitter- und Kollektor-Halbleiter aus Silizium bestehen. Ferner ist es möglich, den Basis-Halbleiter aus Germanium herzustellen, während Emitter- und Kollektor-Halbleiter aus einer AIIIBv-Verbindung zusammengesetzt sind. Es lassen sich alle Kombinationen bilden, bei denen die Forderung erfüllt ist, daß der Basis-Halbleiter aus einer Substanz mit niedrigem Bandabstand besteht, während für Emitter- und Kollektor-Halbleiter Substanzen mit höherem Bandabstand benutzt werden. In jedem Fall liegen die Kapazitäten weit niedriger als bei den reinen Germanium-p-n-Verbindungen. Ein Silizium-Emitter mit beispielsweise 1013 Störstellen pro cm3 ist noch ein ausgezeichneter Emitter gegen eine Germanium-Basisschicht von 1017 bis 1018 Störatomen pro cm3.It is also possible to use the usual ones as semiconductors by a suitable compound of this kind against germanium or silicon is used. If necessary, the base semiconductor can consist of a suitable AIIIBv compound are formed, while emitter and collector semiconductors are made of silicon. It is also possible to manufacture the base semiconductor from germanium while Emitter and collector semiconductors are composed of an AIIIBv compound. All combinations can be formed in which the requirement is met that the base semiconductor consists of a low-bandgap substance while substances with a higher band gap are used for emitter and collector semiconductors will. In any case, the capacities are far lower than with the pure germanium p-n compounds. A silicon emitter with, for example, 1013 imperfections per cm3 is still an excellent one Emitter against a germanium base layer of 1017 to 1018 impurity atoms per cm3.

Claims (4)

PATENTANSPRÜCHE: 1. Halbleiter-Kristallode der Schichtenbauart mit p-n-Verbindungen, bei der der Emitter-Halbleiter gegenüber dem Basis-Halbleiter einen größeren Bandabstand, d. h. eine größere Breite der verbotenen Zone, aufweist, dadurch gekennzeichnet, daß der Basis-Halbleiter stärker dotiert ist als der Emitter- oder Kollektor-Halbleiter. PATENT CLAIMS: 1. Semiconductor crystallode of the layer construction with p-n connections in which the emitter semiconductor is opposite to the base semiconductor a larger band gap, d. H. a greater width of the forbidden zone, characterized in that the base semiconductor is more heavily doped than the emitter or collector semiconductors. 2. Halbleiter-Kristallode nach Anspruch 1, dadurch gekennzeichnet, daß ein Emitter-Halbleiter aus Silizium mit etwa 1013 Störstellen je cm3 an einen Basis-Halbleiter aus kochdotiertem Germanium mit etwa bis 1018 Störstellen je cm3 grenzt. 2. Semiconductor crystallode according to claim 1, characterized in that that an emitter semiconductor made of silicon with about 1013 imperfections per cm3 at one Basic semiconductor made of boiled-doped germanium with up to 1018 imperfections per cm3 borders. 3. Halbleiter-Kristallode nach Anspruch 1, dadurch gekennzeichnet, daß ein Emitter-Halbleiter aus einer AIIIBv-Verbindung mit größerem Bandabstand als der Basis-Halbleiter verwendet ist. 3. semiconductor crystallode according to claim 1, characterized in that a Emitter semiconductor made from an AIIIBv compound with a larger band gap than that Base semiconductor is used. 4. Halbleiter-Kristallode nach Anspruch 1, dadurch gekennzeichnet, daß ein Basis-Halbleiter aus einer AiriBv-Verbindung mit kleinerem Bandabstand als der Emitter-Halbleiter verwendet ist. In Betracht gezogene Druckschriften: Deutsche Patentschrift Nr. 814 487; schweizerische Patentschrift Nr. 277 131; Angewandte Chemie, Bd. 65, Aug. 1953, S. 126; Elektro-Technik, Bd. 35, Nov. 1953, S. 10.4. Semiconductor crystallode according to claim 1, characterized characterized in that a base semiconductor from an AiriBv compound with a smaller Band gap is used as the emitter semiconductor. Considered publications: German Patent No. 814,487; Swiss Patent No. 277 131; Applied Chemie, Vol. 65, Aug. 1953, p. 126; Elektro-Technik, Vol. 35, Nov. 1953, p. 10.
DEB29787A 1954-02-19 1954-02-19 Layered semiconductor crystallode Pending DE1021488B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEB29787A DE1021488B (en) 1954-02-19 1954-02-19 Layered semiconductor crystallode

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Application Number Priority Date Filing Date Title
DEB29787A DE1021488B (en) 1954-02-19 1954-02-19 Layered semiconductor crystallode

Publications (1)

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DE1021488B true DE1021488B (en) 1957-12-27

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1151605B (en) * 1960-08-26 1963-07-18 Telefunken Patent Semiconductor component
DE1152762B (en) * 1960-10-13 1963-08-14 Deutsche Bundespost Transistor for switching with partially falling emitter voltage-emitter current characteristics
DE1189656B (en) * 1962-08-07 1965-03-25 Siemens Ag Semiconductor component with at least one pn junction between zones made of different semiconductor materials
DE1212222B (en) * 1960-09-06 1966-03-10 Western Electric Co Semiconductor diode with a pn junction exhibiting a tunnel effect
DE1284518B (en) * 1960-01-29 1968-12-05 Philips Nv Surface transistor and process for its manufacture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH277131A (en) * 1948-02-26 1951-08-15 Western Electric Co Semiconductor element for amplifying electrical signals.
DE814487C (en) * 1948-06-26 1951-09-24 Western Electric Co Solid, conductive electrical device using semiconductor layers to control electrical energy

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH277131A (en) * 1948-02-26 1951-08-15 Western Electric Co Semiconductor element for amplifying electrical signals.
DE814487C (en) * 1948-06-26 1951-09-24 Western Electric Co Solid, conductive electrical device using semiconductor layers to control electrical energy

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1284518B (en) * 1960-01-29 1968-12-05 Philips Nv Surface transistor and process for its manufacture
DE1151605B (en) * 1960-08-26 1963-07-18 Telefunken Patent Semiconductor component
DE1151605C2 (en) * 1960-08-26 1964-02-06 Telefunken Patent Semiconductor component
DE1212222B (en) * 1960-09-06 1966-03-10 Western Electric Co Semiconductor diode with a pn junction exhibiting a tunnel effect
DE1152762B (en) * 1960-10-13 1963-08-14 Deutsche Bundespost Transistor for switching with partially falling emitter voltage-emitter current characteristics
DE1189656B (en) * 1962-08-07 1965-03-25 Siemens Ag Semiconductor component with at least one pn junction between zones made of different semiconductor materials

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