DE102012101399B3 - Method for processing substrates, involves grinding chips from back side using grinding device, until the chips are separated from each other, and applying finished chips on the carrier - Google Patents
Method for processing substrates, involves grinding chips from back side using grinding device, until the chips are separated from each other, and applying finished chips on the carrier Download PDFInfo
- Publication number
- DE102012101399B3 DE102012101399B3 DE201210101399 DE102012101399A DE102012101399B3 DE 102012101399 B3 DE102012101399 B3 DE 102012101399B3 DE 201210101399 DE201210101399 DE 201210101399 DE 102012101399 A DE102012101399 A DE 102012101399A DE 102012101399 B3 DE102012101399 B3 DE 102012101399B3
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- Germany
- Prior art keywords
- chips
- carrier
- adhesive film
- substrate
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
Description
Hintergrund der ErfindungBackground of the invention
(a) Bereich der Erfindung(a) Field of the invention
Die Erfindung betrifft eine umweltfreundliche Methode zur Bearbeitung von Substraten, insbesondere von Substraten, deren Ausbeute nicht hoch genug ist, die Beschädigungen aufweisen oder die wegen Bearbeitungsproblemen als Ausschuss deklariert wurden. Die erfindungsgemäßen Chips werden werden durch Sägen vereinzelt, geschliffen und selektiert. Dadurch wird die Gesamtausbeute erhöht, was auch der Umwelt zu Gute kommt.The invention relates to an environmentally friendly method for processing substrates, in particular of substrates whose yield is not high enough, have the damage or have been declared as committee due to processing problems. The chips according to the invention are separated by sawing, ground and selected. This increases the overall yield, which also benefits the environment.
(b) Beschreibung des derzeitigen Standes der Technik(b) Description of the current state of the art
Nach der Fertigstellung eines Substrats wird dieses zum Vermessen geschickt, wo festgestellt wird, wie hoch die Ausbeute an guten Chips, die zum Einbau in ein Gehäuse (Verpacken) geeignet sind, ist. Nach Auswerten der Messergebnisse wird entschieden, ob das Substrat als zu schwer zu bearbeiten verworfen oder als Ausschuss an das Materiallager zurückgeschickt werden muss. Dies gilt auch für Substrate mit Schadstellen bzw. nicht ausreichend gleichförmiger Dicke.Upon completion of a substrate, it is sent to surveying where it is determined how high the yield of good chips suitable for packaging (packaging) is. After evaluating the measurement results, a decision is made as to whether the substrate must be discarded as too heavy to process or returned to the material store as scrap. This also applies to substrates with damaged areas or not sufficiently uniform thickness.
Die
Die
Die
Die
Zum Verarbeiten von Waferstücken wie Wafer-Quadranten zeigt die
Aufgabe der Erfindung ist eine Methode zur umweltfreundlichen Bearbeitung von Substraten anzugeben, die auch auf fehlerhafte Substrate, z. B. solche mit Beschädigungen am Rand, solche ohne verwertbare Chips und solche mit zu geringer Ausbeute anwendbar ist, um so den Ausschuss zu verringern.The object of the invention is to provide a method for environmentally friendly processing of substrates, which are also on defective substrates, eg. B. those with damage on the edge, those without usable chips and those with too low yield is applicable, so as to reduce the committee.
Diese Aufgabe wird durch die im Anspruch 1 angegebene Erfindung gelöst. Vorteilhafte Weiterbildungen der Erfindung sind in Unteransprüchen angegeben.This object is achieved by the invention defined in
Gemäß der Erfindung werden fehlerhaft gebrochene Substrate durch Sägen in einzelne Chips zerlegt und von der Rückseite her auf die benötigte Dicke zurecht geschliffen. Danach werden die vollständigen Chips auf einen Träger aufgebracht.According to the invention, defective broken substrates are cut into individual chips by sawing and ground from the back to the required thickness. Thereafter, the complete chips are applied to a carrier.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Detaillierte Beschreibung der bevorzugten Ausführung Detailed description of the preferred embodiment
Schritt
Schritt
Schritt
Schritt
Auf diese Weise können Substrate (
Die obigen Schritte
Die obigen Schritte
Schritt
Schritt
Schritt
Schritt
Auf diese Weise können Substrate (
Die obigen Schritte
Die obigen Schritte
Schritt
Schritt
Schritt
Schritt
Auf diese Weise können schadhafte Substrate (
Die obigen Schritte
Zu dem oben gesagten soll angemerkt werden, dass es von der Haftung der Klebefolie (
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201210101399 DE102012101399B3 (en) | 2012-02-22 | 2012-02-22 | Method for processing substrates, involves grinding chips from back side using grinding device, until the chips are separated from each other, and applying finished chips on the carrier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201210101399 DE102012101399B3 (en) | 2012-02-22 | 2012-02-22 | Method for processing substrates, involves grinding chips from back side using grinding device, until the chips are separated from each other, and applying finished chips on the carrier |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102012101399B3 true DE102012101399B3 (en) | 2013-08-01 |
Family
ID=48783972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE201210101399 Active DE102012101399B3 (en) | 2012-02-22 | 2012-02-22 | Method for processing substrates, involves grinding chips from back side using grinding device, until the chips are separated from each other, and applying finished chips on the carrier |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102012101399B3 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040140533A1 (en) * | 2002-11-06 | 2004-07-22 | Stern Jonathan Michael | Method for creating neo-wafers from singulated integrated circuit die and a device made according to the method |
US6861336B1 (en) * | 2003-11-30 | 2005-03-01 | Union Semiconductor Technology Corporation | Die thinning methods |
DE10342981A1 (en) * | 2003-09-17 | 2005-04-21 | Disco Hi Tec Europ Gmbh | Partial processing device for semiconductor wafer applies adhesive foil to semiconductor wafer overlaid by stripping foil used for removal of defined regions of adhesive foil |
JP2005129567A (en) * | 2003-10-21 | 2005-05-19 | Trecenti Technologies Inc | Manufacturing method for semiconductor device |
US20100029022A1 (en) * | 2007-02-02 | 2010-02-04 | Suss Microtec Test Systems Gmbh | Method for improved utilization of semiconductor material |
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2012
- 2012-02-22 DE DE201210101399 patent/DE102012101399B3/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040140533A1 (en) * | 2002-11-06 | 2004-07-22 | Stern Jonathan Michael | Method for creating neo-wafers from singulated integrated circuit die and a device made according to the method |
DE10342981A1 (en) * | 2003-09-17 | 2005-04-21 | Disco Hi Tec Europ Gmbh | Partial processing device for semiconductor wafer applies adhesive foil to semiconductor wafer overlaid by stripping foil used for removal of defined regions of adhesive foil |
JP2005129567A (en) * | 2003-10-21 | 2005-05-19 | Trecenti Technologies Inc | Manufacturing method for semiconductor device |
US6861336B1 (en) * | 2003-11-30 | 2005-03-01 | Union Semiconductor Technology Corporation | Die thinning methods |
US20100029022A1 (en) * | 2007-02-02 | 2010-02-04 | Suss Microtec Test Systems Gmbh | Method for improved utilization of semiconductor material |
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R012 | Request for examination validly filed | ||
R082 | Change of representative |
Representative=s name: MEYER, LUDGERUS A., DIPL.-ING., DE |
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R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |
Effective date: 20131105 |