DE102004052096B4 - Semiconductor switching element with field effect transistors - Google Patents
Semiconductor switching element with field effect transistors Download PDFInfo
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- DE102004052096B4 DE102004052096B4 DE102004052096.8A DE102004052096A DE102004052096B4 DE 102004052096 B4 DE102004052096 B4 DE 102004052096B4 DE 102004052096 A DE102004052096 A DE 102004052096A DE 102004052096 B4 DE102004052096 B4 DE 102004052096B4
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- 230000005669 field effect Effects 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 claims 1
- 230000001172 regenerating effect Effects 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Schaltungsanordnung, umfassend – einen Feldeffekttransistor (1) vom p-Kanal-Typ – einen Feldeffekttransistor (2) vom n-Kanal-Typ die jeweils einen Source- (5) (9), einen Drain- (6) (8) und einen Gate-Anschluß (7) (10) aufweisen, wobei – die Source-Anschlüße (5) (9) dieser Feldeffekttransistoren miteinander galavanisch verbunden sind und – zwischen dem Gate-Anschluß (10) von einem dieser Feldeffekttransistoren und dem Drain-Anschluß (6) des anderen Feldeffekttransistors eine Steuerspannungsquelle (11) angeschlossen ist.Circuit arrangement comprising - a field effect transistor (1) of the p-channel type - an n-channel type field effect transistor (2) each having a source (5) (9), a drain (6) (8) and a Gate terminal (7) (10), wherein - the source terminals (5) (9) of these field effect transistors are Galvanically connected to each other and - between the gate terminal (10) of one of these field effect transistors and the drain terminal (6 ) of the other field effect transistor, a control voltage source (11) is connected.
Description
Die Erfindung betrifft ein Halbleiterschaltelement, bestehend aus einer monolithisch integrierten Serienschaltung von feldeffektgesteuerten Transistoren, mit jeweils einem Source-, Drain- und einem Gate-Anschluß, wobei der eine Transistor ein n-Kanal- und der andere Transistor ein p-Kanal-Typ ist und die Source-Anschlüsse der beiden Transistoren miteinander galvanisch verbunden sind und wobei die an den Transistoren abfallenden Spannungen den jeweils anderen Transistor in Richtung einer höheren Durchlassspannung steuern. Ein solches Halbleiterschaltelement besitzt die Fähigkeit, sich bei Überschreiten eines vorgegebenen Laststroms regenerativ abzuschalten.The invention relates to a semiconductor switching element consisting of a monolithically integrated series circuit of field effect controlled transistors, each having a source, drain and a gate terminal, wherein the one transistor is an n-channel and the other transistor is a p-channel type and the source terminals of the two transistors are galvanically connected to each other and wherein the voltages dropped across the transistors control the respective other transistor in the direction of a higher forward voltage. Such a semiconductor switching element has the ability to turn off regeneratively when a predetermined load current is exceeded.
Halbleiterschaltelemente der Leistungselektronik mit der Eigenschaft, den Laststrom auf ein vorgegebenes, meist durch die Ansteuerung einstellbares Niveau zu begrenzen, sind seit langem bekannt. Grundsätzlich haben fast alle Arten von Leistungstransistoren diese Fähigkeit. Bei Überschreiten eines zulässigen Laststroms, beispielsweise bei Kurzschluss, wird der Strom begrenzt und dann aktiv abgeschaltet. Die zulässigen Strom- und Spannungsniveaus werden manchmal durch einen ”sicheren Arbeitsbereich” gekennzeichnet.Semiconductor switching elements of power electronics with the property to limit the load current to a predetermined, usually adjustable by the control level, have long been known. Basically, almost all types of power transistors have this capability. When a permissible load current is exceeded, for example in the case of a short circuit, the current is limited and then actively switched off. The permitted current and voltage levels are sometimes indicated by a "safe working area".
Es sind auch Thyristorschaltungen bekannt, mit denen eine Strombegrenzung erreicht werden kann. Dies sind beispielsweise die Kaskodenschaltungen, bei denen ein abschaltfähiger Thyristor und ein Transistor zu einem ”Emitter Switched Thyristor” zusammengeschaltet werden.Thyristor circuits are also known with which a current limitation can be achieved. These are, for example, the cascode circuits in which a turn-off thyristor and a transistor are connected together to form an "emitter-switched thyristor".
Es gibt auch zahlreiche Vorschläge, voll integrierte ”Emitter Switched Thyristoren” herzustellen (
Es sind Schaltungskonzepte bekannt, die es erlauben, bei Überstrom oder Kurzschluss die Halbleiterschalter so rasch abzuschalten, dass eine Zerstörung der Schaltung vermieden wird. Bei einigen Anwendungen kleiner oder mittlerer Leistung sind solche Zusatzfunktionen monolithisch integriert. Verwirklicht werden diese Zusatzfunktionen durch besondere Sensoren für die Stromhöhe oder die Temperatur des Schaltelements, durch Auswerteschaltungen für diese Sensoren und besondere Maßnahmen zum schnellen Abschalten.Circuit concepts are known which allow the semiconductor switches to be switched off so quickly in the event of overcurrent or short circuit that destruction of the circuit is avoided. In some applications of low or medium power such additional functions are monolithically integrated. These additional functions are realized by special sensors for the current level or the temperature of the switching element, by evaluation circuits for these sensors and special measures for quick shutdown.
Seit sehr langer Zeit ist ein Schaltungsprinzip und Bauelement bekannt, mit dem ein regeneratives Selbst-Abschalten des Laststroms bewirkt wird. Es ist in einem bekannten Lehrbuch ”Feldeffekttransistoren”, R. Paul, VEB Verlag Technik, Berlin, 1972, S. 148–150 als Verschaltung eines p-Kanal-Sperrschicht-Feldeffekttransistors mit einem komplementären n-Kanal-Transistor beschrieben. Prinzipiell lässt sich das Schaltungsprinzip auch als duale Entsprechung eines Thyristors deuten (
In der US-Patentschrift
In der Deutschen Patentschrift
Weiterhin ist aus der
Der Erfindung liegt die Aufgabe zugrunde, ein Halbleiterschaltelement der eingangs genannten Art zu schaffen, das mit regenerativer Überstrom-Abschaltfähigkeit und guten Durchlasseigenschaften ausgestattet ist und durch gesteuertes Einleiten des regenerativen Abschaltvorgangs ausgeschaltet und durch Unterbrechung das regenerativen Ausschaltzustandes eingeschaltet werden kann.The invention has for its object to provide a semiconductor switching element of the type mentioned, which is equipped with regenerative overcurrent shutdown capability and good transmission characteristics and turned off by controlled initiation of the regenerative shutdown and can be turned on by interrupting the regenerative OFF state.
Die erfindungsgemäße Aufgabe wird durch die kennzeichnenden Merkmale des Anspruchs 1 gelöst. Weiterführende Ausgestaltungen ergeben sich aus den Unteransprüchen.The object of the invention is achieved by the characterizing features of
Der durch die Erfindung erreichte Vorteil besteht zunächst darin, dass das Bauelement als reines Sicherungselement eingesetzt werden kann, bei dem die Höhe des abzuschaltenden Überstroms durch die Ansteuerung beeinflusst werden kann. Das Bauelement kann darüber hinaus auch als Leistungsschalter eingesetzt werden, der infolge seiner eingebauten ”Überstrom-Abschaltfähigkeit” einen besonders sicheren Betrieb erlaubt. Bei bisherigen Leistungsschaltelementen sind solche Funktionen nur in relativ aufwendigen Zusatzschaltungen oder integrierten Schaltkreisen verwirklicht.The advantage achieved by the invention consists first of all in that the component can be used as a pure security element, in which the height of the overcurrent to be disconnected can be influenced by the control. The device can also be used as a circuit breaker, which allows a particularly safe operation due to its built-in "overcurrent shutdown". In previous power switching elements such functions are realized only in relatively expensive additional circuits or integrated circuits.
Die guten Durchlasseigenschaften, die mit diesem Bauelement erreicht werden können, machen es zu einem leistungsfähigen Halbleiterschalter, so dass es selbst in solchen Anwendungen einsetzbar ist, in denen die regenerative Überstrom-Abschaltfähigkeit nicht ausgenutzt wird.The good transmission characteristics that can be achieved with this device make it a powerful semiconductor switch, so it can be used even in those applications where the regenerative overcurrent breaking capability is not exploited.
Im Folgenden wird die Erfindung anhand von Ausführungsbeispielen näher erläutert; es zeigen:In the following the invention will be explained in more detail with reference to exemplary embodiments; show it:
Die
Wenn das Bauelement bei anliegender Sperrspannung eingeschaltet werden soll, muss die Spannung der Steuerspannungsquelle
Zum Ansteuern sind eine variable Steuerspannungsquelle
Es ist ein bei IGBTs bekannter Störzustand, dass das Bauelement in einen Thyristor-Zustand übergeht (”Latchen”) und dann nicht mehr abgeschaltet werden kann. Dieser Latch-Zustand beruht auf einer Bipolar-Injektion von Elektronen aus dem n-Source-Bereich und entsteht, wenn die aus der Schicht
Claims (16)
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DE102004052096.8A DE102004052096B4 (en) | 2004-10-26 | 2004-10-26 | Semiconductor switching element with field effect transistors |
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DE102004052096.8A DE102004052096B4 (en) | 2004-10-26 | 2004-10-26 | Semiconductor switching element with field effect transistors |
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DE102004052096A1 DE102004052096A1 (en) | 2006-04-27 |
DE102004052096B4 true DE102004052096B4 (en) | 2016-05-19 |
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DE102004052096.8A Expired - Fee Related DE102004052096B4 (en) | 2004-10-26 | 2004-10-26 | Semiconductor switching element with field effect transistors |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6469352B2 (en) * | 2000-06-30 | 2002-10-22 | Shindengen Electric Manufacturing Co., Ltd. | Two-terminal semiconductor overcurrent limiter |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6469352B2 (en) * | 2000-06-30 | 2002-10-22 | Shindengen Electric Manufacturing Co., Ltd. | Two-terminal semiconductor overcurrent limiter |
Non-Patent Citations (2)
Title |
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Laur, J-P [et al.]: A new circuit-breaker integrated device for protection applications In: ISPSD '99, 1999, pp. 315-318 |
Laur, J-P [et al.]: A new circuit-breaker integrated device for protection applications In: ISPSD '99, 1999, pp. 315-318 * |
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Owner name: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE |
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