DE1007225T1 - Hochreines kompositmaterial zur verwendung als suszeptor - Google Patents
Hochreines kompositmaterial zur verwendung als suszeptorInfo
- Publication number
- DE1007225T1 DE1007225T1 DE1007225T DE98920187T DE1007225T1 DE 1007225 T1 DE1007225 T1 DE 1007225T1 DE 1007225 T DE1007225 T DE 1007225T DE 98920187 T DE98920187 T DE 98920187T DE 1007225 T1 DE1007225 T1 DE 1007225T1
- Authority
- DE
- Germany
- Prior art keywords
- crucible holder
- composite material
- crucible
- high purity
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 239000013078 crystal Substances 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 235000012431 wafers Nutrition 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910052788 barium Inorganic materials 0.000 claims 2
- 229910052790 beryllium Inorganic materials 0.000 claims 2
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims 2
- 229910052791 calcium Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 229910052700 potassium Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 229910052712 strontium Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229920000049 Carbon (fiber) Polymers 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 150000001721 carbon Chemical class 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000004917 carbon fiber Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000011109 contamination Methods 0.000 claims 1
- 238000002109 crystal growth method Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 238000009863 impact test Methods 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
- C04B35/83—Carbon fibres in a carbon matrix
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F11/00—Chemical after-treatment of artificial filaments or the like during manufacture
- D01F11/10—Chemical after-treatment of artificial filaments or the like during manufacture of carbon
- D01F11/12—Chemical after-treatment of artificial filaments or the like during manufacture of carbon with inorganic substances ; Intercalation
- D01F11/125—Carbon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
- Y10T442/20—Coated or impregnated woven, knit, or nonwoven fabric which is not [a] associated with another preformed layer or fiber layer or, [b] with respect to woven and knit, characterized, respectively, by a particular or differential weave or knit, wherein the coating or impregnation is neither a foamed material nor a free metal or alloy layer
- Y10T442/2926—Coated or impregnated inorganic fiber fabric
- Y10T442/2984—Coated or impregnated carbon or carbonaceous fiber fabric
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Textile Engineering (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
Claims (27)
1. Tiegelhalter für ein Kristallwachstumsverfahren zum Ziehen eines Kristallblocks aus
einer Kristallmaterialschmelze in einem Tiegel, umfassend:
einer Kristallmaterialschmelze in einem Tiegel, umfassend:
einen hochreinen Verbundwerkstoff, der eine zweidimensionale, mit kontinuierlich
gewebtem Kohlenstofffasergewebe verstärkte Kohlenstoffmatrix enthält,
wobei der hochreine Verbundwerkstoff einen Gesamtgehalt an Metallverunreinigung
von weniger als 10 Teilen pro Million aufweist,
und der Tiegelhalter eine einteilige geschichtete (ply lay-up) Struktur des hochreinen
Verbundwerkstoffs ist, der einen seitlichen Ring und eine Basis aufweist, wobei der
seitliche Ring und die Basis weitgehend die gleiche Dicke aufweisen.
2. Tiegelhalter nach Anspruch 1, wobei die Basis so ausgelegt ist, dass ein Kristallwachstumsofensockel
direkt eingreifen kann.
3. Tiegelhalter nach Anspruch 1, wobei die Dicke der Basis und des seitlichen Rings
ungefähr 0,12 inch bis ungefähr 0,35 inch beträgt.
4. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen
weitgehend gleichmäßigen Wärmeübergang von außerhalb des Halters zu dem Tiegel, der die Schmelze enthält, vorsieht.
5. Tiegelhalter nach Anspruch 1 mit einer hitzebeständigen Beschichtung, ausgewählt
aus der Gruppe, bestehend aus Carbiden, Boriden und Nitriden.
6. Tiegelhalter nach Anspruch 1 mit einer hitzebeständigen Beschichtung, ausgewählt
aus der Gruppe, bestehend aus Siliciumcarbid, Siliciumnitrid, Bornitrid, pyrolytischem
Bornitrid und Siliciumborid.
007225T1
7. Tiegelhalter nach Anspruch 1, wobei die Metallverunreinigung weitgehend aus den
Metallen Ag, Al, Ba, Be, Ca, Cd, Co, Cr, Cu, Fe, K, Mg, Mn, Mo, Na, Ni, P, Pb, Sr, V
und Zn besteht.
8. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen
Gesamtgehalt an Metallverunreinigung von weniger als 5 Teilen pro Million aufweist.
9. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen Gehalt an
Metallverunreinigung unterhalb der Nachweisgrenze der induktiv gekoppelten Plasmaspektroskopie für die Metalle Ag, Al, Ba, Be, Ca, Cd, Co, Cr, Cu, K, Mg, Mn,
Mo, Na, Ni, P, Pb, Sr und Zn aufweist.
10. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine
Zugfestigkeit von ungefähr 25 bis ungefähr 100 ksi und ein Zugmodul von ungefähr 3
bis ungefähr 30 msi aufweist.
11. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine
Biegefestigkeit von ungefähr 15 bis ungefähr 60 ksi und eine Druckfestigkeit von
ungefähr 10 bis ungefähr 50 ksi aufweist.
12. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine
Bruchzähigkeit, gemessen mit dem Izod-Schlagtest, von ungefähr 5 bis ungefähr 25
ft lb/in aufweist.
13. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen
Wärmeausdehnungskoeffizienten in der Ebene von Null bis ungefähr 2 &khgr; 106 und
einen Querlagen-Wärmeausdehnungskoeffizienten von ungefähr 6 bis ungefähr 10 &khgr;
106 aufweist.
14. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen
Wärmeausdehnungskoeffizienten in der Ebene von ungefähr 1,4 &khgr; &Igr;&Ogr;6 aufweist.
Ep ! 007 22 5 Tl
15. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine
Wärmeleitfähigkeit in der Ebene von ungefähr 20 bis ungefähr 500 W/mK und eine Querlagen-Wärmeleitfähigkeit von ungefähr 5 bis ungefähr 200 W/mK aufweist.
16. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine
Wärmeleitfähigkeit von ungefähr 100 W/mK aufweist.
17. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff ein thermisches
Emissionsvermögen von ungefähr 0,4 bis ungefähr 0,8 aufweist.
18. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff ein thermisches
Emissionsvermögen von ungefähr 0,52 aufweist.
19. Tiegelhalter nach Anspruch 1 mit einem spezifischen elektrischen Widerstand von
ungefähr 1 &khgr; 10"4 bis ungefähr 1 &khgr; 10"2 Ohm-cm.
20. Einkristallwachstumsverfahren zum Ziehen eines Einkristallblocks aus einer Kristallmaterialschmelze,
umfassend:
Bereitstellen der Kristallrnaterialschmelze in einem Tiegel, und
Stützen des Tiegels mit innigem Kontakt zu dem Tiegelhalter nach Anspruch 1.
21. Verfahren nach Anspruch 20, umfassend das Absetzen des Tiegelhalters direkt auf
einen Kristallwachstumsofensockel.
22. Verfahren nach Anspruch 20, wobei das Kristallmaterial ausgewählt ist aus Saphir,
Silicium, Galliumarsenid und Cadmiumzinktellurid.
23. Czochralski-Kristallwachstumsverfahren zum Ziehen eines Halbleiterblocks aus einer
Halbleitermaterialschmelze, umfassend:
Bereitstellen der Halbleitermaterialschmelze in einem Quarztiegel, und
Stützen des Tiegels mit innigem Kontakt zu dem Tiegelhalter nach Anspruch 1.
Stützen des Tiegels mit innigem Kontakt zu dem Tiegelhalter nach Anspruch 1.
24. Verfahren nach Anspruch 23, umfassend das Absetzen des Tiegelhalters direkt auf
einen Czochralski-Kristallwachstumsofensockel.
Si .* : Ss '
25. Verfahren nach Anspruch 23, wobei der Halbleiterblock ein Siliciumblock ist,
umfassend das Schneiden des Süiciumblocks zu Siliciumwafern und weiterhin
umfassend das Bereitstellen der Siliciumwafer mit einer elektrischen Durchbruchszeit
von größer als 300 Mikrosekunden.
26. Verfahren nach Anspruch 23, wobei der Halbleiterblock ein Siliciumblock ist,
umfassend das Schneiden des Süiciumblocks zu Siliciumwafern und weiterhin umfassend das Bereitstellen einer Ausbeute von größer als 68 Prozent an Silicium-Halbleiter-Wafern,
die „gut strukturierbar" („good-for-structure") sind.
27. Verfahren nach Anspruch 23, wobei der Halbleiter ausgewählt ist aus der Gruppe,
bestehend aus Silicium, Galliumarsenid und Cadmiumzinktellurid.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/868,211 US5858486A (en) | 1995-02-27 | 1997-06-03 | High purity carbon/carbon composite useful as a crucible susceptor |
PCT/US1998/009015 WO1998055238A1 (en) | 1997-06-03 | 1998-05-08 | High purity composite useful as a susceptor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1007225T1 true DE1007225T1 (de) | 2001-03-01 |
Family
ID=25351242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1007225T Pending DE1007225T1 (de) | 1997-06-03 | 1998-05-08 | Hochreines kompositmaterial zur verwendung als suszeptor |
Country Status (9)
Country | Link |
---|---|
US (1) | US5858486A (de) |
EP (1) | EP1007225A4 (de) |
JP (1) | JP3454516B2 (de) |
KR (1) | KR100388835B1 (de) |
DE (1) | DE1007225T1 (de) |
IL (1) | IL132591A (de) |
MY (1) | MY116744A (de) |
TW (1) | TW495563B (de) |
WO (1) | WO1998055238A1 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000022158A (ko) * | 1996-06-27 | 2000-04-25 | 도요탄소 가부시키가이샤 | 단결정 인상용 도가니 및 그 제조방법 |
JP4686509B2 (ja) * | 1996-06-27 | 2011-05-25 | 東洋炭素株式会社 | 単結晶引き上げ用ルツボ |
JP4686508B2 (ja) * | 1996-06-27 | 2011-05-25 | 東洋炭素株式会社 | 単結晶引き上げ用ルツボ |
JP4634419B2 (ja) * | 1996-06-27 | 2011-02-16 | 東洋炭素株式会社 | 単結晶引き上げ用ルツボ |
JP2007314420A (ja) * | 1996-06-27 | 2007-12-06 | Toyo Tanso Kk | 単結晶引き上げ用ルツボ |
JP4634420B2 (ja) * | 1996-06-27 | 2011-02-16 | 東洋炭素株式会社 | 単結晶引き上げ用ルツボの製造方法 |
US6100587A (en) * | 1999-08-26 | 2000-08-08 | Lucent Technologies Inc. | Silicon carbide barrier layers for porous low dielectric constant materials |
FR2801304B1 (fr) * | 1999-11-24 | 2002-02-15 | Snecma | Procede de fabrication d'un bol en materiau composite thermostructural, notamment pour une installation de production de silicium monocristallin |
WO2001038625A2 (fr) * | 1999-11-24 | 2001-05-31 | Snecma Moteurs | Procede de fabrication d'un bol en materiau composite thermostructural, bol tel qu'obtenu par le procede, et utilisation du bol comme support de creuset |
FR2812889B1 (fr) * | 2000-08-11 | 2002-11-15 | Snecma Moteurs | Procede de fabrication d'un bol monobloc en materiau composite thermostructural, notamment pour une installation de production de silicium, et bol tel qu'obtenu par ce procede |
US6348870B1 (en) * | 2000-12-28 | 2002-02-19 | Seh America, Inc. | Melt spill indicator device |
FR2819803B1 (fr) * | 2001-01-24 | 2003-04-25 | Eads Launch Vehicles | Procede de fabrication d'un porte-creuset et carbone/carbone et porte-creuset obtenu |
US20020166503A1 (en) * | 2001-03-08 | 2002-11-14 | Hitco Carbon Composites, Inc. | Hybrid crucible susceptor |
CA2427944A1 (en) * | 2001-10-08 | 2003-04-17 | Timcal Ag | Electrochemical cell |
WO2003031130A1 (en) * | 2001-10-09 | 2003-04-17 | Dean Jurik | Textured masonry block mold and method |
US20030113488A1 (en) * | 2001-12-19 | 2003-06-19 | Wacker Siltronic Ag | Device for holding a molten semiconductor material |
US20030209326A1 (en) * | 2002-05-07 | 2003-11-13 | Mattson Technology, Inc. | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
US6881680B2 (en) * | 2002-06-14 | 2005-04-19 | Toyo Tanso Co., Ltd. | Low nitrogen concentration carbonaceous material and manufacturing method thereof |
WO2004044275A2 (en) * | 2002-11-12 | 2004-05-27 | Memc Electronic Materials, Inc. | Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus |
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1997
- 1997-06-03 US US08/868,211 patent/US5858486A/en not_active Expired - Fee Related
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- 1998-05-08 IL IL13259198A patent/IL132591A/xx not_active IP Right Cessation
- 1998-05-08 DE DE1007225T patent/DE1007225T1/de active Pending
- 1998-05-08 WO PCT/US1998/009015 patent/WO1998055238A1/en not_active Application Discontinuation
- 1998-05-08 KR KR10-1999-7010422A patent/KR100388835B1/ko not_active IP Right Cessation
- 1998-05-08 EP EP98920187A patent/EP1007225A4/de not_active Withdrawn
- 1998-05-08 JP JP50241899A patent/JP3454516B2/ja not_active Expired - Fee Related
- 1998-05-29 MY MYPI98002412A patent/MY116744A/en unknown
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EP1007225A1 (de) | 2000-06-14 |
US5858486A (en) | 1999-01-12 |
JP2000513702A (ja) | 2000-10-17 |
TW495563B (en) | 2002-07-21 |
JP3454516B2 (ja) | 2003-10-06 |
IL132591A (en) | 2003-02-12 |
MY116744A (en) | 2004-03-31 |
KR100388835B1 (ko) | 2003-06-25 |
KR20010020451A (ko) | 2001-03-15 |
WO1998055238A1 (en) | 1998-12-10 |
IL132591A0 (en) | 2001-03-19 |
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