DE1007225T1 - Hochreines kompositmaterial zur verwendung als suszeptor - Google Patents

Hochreines kompositmaterial zur verwendung als suszeptor

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Publication number
DE1007225T1
DE1007225T1 DE1007225T DE98920187T DE1007225T1 DE 1007225 T1 DE1007225 T1 DE 1007225T1 DE 1007225 T DE1007225 T DE 1007225T DE 98920187 T DE98920187 T DE 98920187T DE 1007225 T1 DE1007225 T1 DE 1007225T1
Authority
DE
Germany
Prior art keywords
crucible holder
composite material
crucible
high purity
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1007225T
Other languages
English (en)
Inventor
David Hathcock
Howard Metter
M. Winzek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SGL Composites Inc
Original Assignee
Hitco Carbon Composites Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitco Carbon Composites Inc filed Critical Hitco Carbon Composites Inc
Publication of DE1007225T1 publication Critical patent/DE1007225T1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/71—Ceramic products containing macroscopic reinforcing agents
    • C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
    • C04B35/80—Fibres, filaments, whiskers, platelets, or the like
    • C04B35/83—Carbon fibres in a carbon matrix
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F11/00—Chemical after-treatment of artificial filaments or the like during manufacture
    • D01F11/10—Chemical after-treatment of artificial filaments or the like during manufacture of carbon
    • D01F11/12—Chemical after-treatment of artificial filaments or the like during manufacture of carbon with inorganic substances ; Intercalation
    • D01F11/125—Carbon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
    • Y10T442/20—Coated or impregnated woven, knit, or nonwoven fabric which is not [a] associated with another preformed layer or fiber layer or, [b] with respect to woven and knit, characterized, respectively, by a particular or differential weave or knit, wherein the coating or impregnation is neither a foamed material nor a free metal or alloy layer
    • Y10T442/2926—Coated or impregnated inorganic fiber fabric
    • Y10T442/2984—Coated or impregnated carbon or carbonaceous fiber fabric

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Textile Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)

Claims (27)

EP98920187.6 * &Pgr; E / E P 1 O O 7 2 2 5 HITCO CARBON COMPOSITES INC. PATENTANSPRÜCHE
1. Tiegelhalter für ein Kristallwachstumsverfahren zum Ziehen eines Kristallblocks aus
einer Kristallmaterialschmelze in einem Tiegel, umfassend:
einen hochreinen Verbundwerkstoff, der eine zweidimensionale, mit kontinuierlich gewebtem Kohlenstofffasergewebe verstärkte Kohlenstoffmatrix enthält,
wobei der hochreine Verbundwerkstoff einen Gesamtgehalt an Metallverunreinigung von weniger als 10 Teilen pro Million aufweist,
und der Tiegelhalter eine einteilige geschichtete (ply lay-up) Struktur des hochreinen Verbundwerkstoffs ist, der einen seitlichen Ring und eine Basis aufweist, wobei der seitliche Ring und die Basis weitgehend die gleiche Dicke aufweisen.
2. Tiegelhalter nach Anspruch 1, wobei die Basis so ausgelegt ist, dass ein Kristallwachstumsofensockel direkt eingreifen kann.
3. Tiegelhalter nach Anspruch 1, wobei die Dicke der Basis und des seitlichen Rings ungefähr 0,12 inch bis ungefähr 0,35 inch beträgt.
4. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen weitgehend gleichmäßigen Wärmeübergang von außerhalb des Halters zu dem Tiegel, der die Schmelze enthält, vorsieht.
5. Tiegelhalter nach Anspruch 1 mit einer hitzebeständigen Beschichtung, ausgewählt aus der Gruppe, bestehend aus Carbiden, Boriden und Nitriden.
6. Tiegelhalter nach Anspruch 1 mit einer hitzebeständigen Beschichtung, ausgewählt aus der Gruppe, bestehend aus Siliciumcarbid, Siliciumnitrid, Bornitrid, pyrolytischem Bornitrid und Siliciumborid.
007225T1
7. Tiegelhalter nach Anspruch 1, wobei die Metallverunreinigung weitgehend aus den Metallen Ag, Al, Ba, Be, Ca, Cd, Co, Cr, Cu, Fe, K, Mg, Mn, Mo, Na, Ni, P, Pb, Sr, V und Zn besteht.
8. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen Gesamtgehalt an Metallverunreinigung von weniger als 5 Teilen pro Million aufweist.
9. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen Gehalt an Metallverunreinigung unterhalb der Nachweisgrenze der induktiv gekoppelten Plasmaspektroskopie für die Metalle Ag, Al, Ba, Be, Ca, Cd, Co, Cr, Cu, K, Mg, Mn, Mo, Na, Ni, P, Pb, Sr und Zn aufweist.
10. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine Zugfestigkeit von ungefähr 25 bis ungefähr 100 ksi und ein Zugmodul von ungefähr 3 bis ungefähr 30 msi aufweist.
11. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine Biegefestigkeit von ungefähr 15 bis ungefähr 60 ksi und eine Druckfestigkeit von ungefähr 10 bis ungefähr 50 ksi aufweist.
12. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine Bruchzähigkeit, gemessen mit dem Izod-Schlagtest, von ungefähr 5 bis ungefähr 25 ft lb/in aufweist.
13. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen Wärmeausdehnungskoeffizienten in der Ebene von Null bis ungefähr 2 &khgr; 106 und einen Querlagen-Wärmeausdehnungskoeffizienten von ungefähr 6 bis ungefähr 10 &khgr; 106 aufweist.
14. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff einen Wärmeausdehnungskoeffizienten in der Ebene von ungefähr 1,4 &khgr; &Igr;&Ogr;6 aufweist.
Ep ! 007 22 5 Tl
15. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine Wärmeleitfähigkeit in der Ebene von ungefähr 20 bis ungefähr 500 W/mK und eine Querlagen-Wärmeleitfähigkeit von ungefähr 5 bis ungefähr 200 W/mK aufweist.
16. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff eine Wärmeleitfähigkeit von ungefähr 100 W/mK aufweist.
17. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff ein thermisches Emissionsvermögen von ungefähr 0,4 bis ungefähr 0,8 aufweist.
18. Tiegelhalter nach Anspruch 1, wobei der hochreine Verbundwerkstoff ein thermisches Emissionsvermögen von ungefähr 0,52 aufweist.
19. Tiegelhalter nach Anspruch 1 mit einem spezifischen elektrischen Widerstand von ungefähr 1 &khgr; 10"4 bis ungefähr 1 &khgr; 10"2 Ohm-cm.
20. Einkristallwachstumsverfahren zum Ziehen eines Einkristallblocks aus einer Kristallmaterialschmelze, umfassend:
Bereitstellen der Kristallrnaterialschmelze in einem Tiegel, und
Stützen des Tiegels mit innigem Kontakt zu dem Tiegelhalter nach Anspruch 1.
21. Verfahren nach Anspruch 20, umfassend das Absetzen des Tiegelhalters direkt auf einen Kristallwachstumsofensockel.
22. Verfahren nach Anspruch 20, wobei das Kristallmaterial ausgewählt ist aus Saphir, Silicium, Galliumarsenid und Cadmiumzinktellurid.
23. Czochralski-Kristallwachstumsverfahren zum Ziehen eines Halbleiterblocks aus einer Halbleitermaterialschmelze, umfassend:
Bereitstellen der Halbleitermaterialschmelze in einem Quarztiegel, und
Stützen des Tiegels mit innigem Kontakt zu dem Tiegelhalter nach Anspruch 1.
24. Verfahren nach Anspruch 23, umfassend das Absetzen des Tiegelhalters direkt auf einen Czochralski-Kristallwachstumsofensockel.
Si .* : Ss '
25. Verfahren nach Anspruch 23, wobei der Halbleiterblock ein Siliciumblock ist, umfassend das Schneiden des Süiciumblocks zu Siliciumwafern und weiterhin umfassend das Bereitstellen der Siliciumwafer mit einer elektrischen Durchbruchszeit von größer als 300 Mikrosekunden.
26. Verfahren nach Anspruch 23, wobei der Halbleiterblock ein Siliciumblock ist, umfassend das Schneiden des Süiciumblocks zu Siliciumwafern und weiterhin umfassend das Bereitstellen einer Ausbeute von größer als 68 Prozent an Silicium-Halbleiter-Wafern, die „gut strukturierbar" („good-for-structure") sind.
27. Verfahren nach Anspruch 23, wobei der Halbleiter ausgewählt ist aus der Gruppe, bestehend aus Silicium, Galliumarsenid und Cadmiumzinktellurid.
DE1007225T 1997-06-03 1998-05-08 Hochreines kompositmaterial zur verwendung als suszeptor Pending DE1007225T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/868,211 US5858486A (en) 1995-02-27 1997-06-03 High purity carbon/carbon composite useful as a crucible susceptor
PCT/US1998/009015 WO1998055238A1 (en) 1997-06-03 1998-05-08 High purity composite useful as a susceptor

Publications (1)

Publication Number Publication Date
DE1007225T1 true DE1007225T1 (de) 2001-03-01

Family

ID=25351242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1007225T Pending DE1007225T1 (de) 1997-06-03 1998-05-08 Hochreines kompositmaterial zur verwendung als suszeptor

Country Status (9)

Country Link
US (1) US5858486A (de)
EP (1) EP1007225A4 (de)
JP (1) JP3454516B2 (de)
KR (1) KR100388835B1 (de)
DE (1) DE1007225T1 (de)
IL (1) IL132591A (de)
MY (1) MY116744A (de)
TW (1) TW495563B (de)
WO (1) WO1998055238A1 (de)

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JP3454516B2 (ja) 2003-10-06
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MY116744A (en) 2004-03-31
KR100388835B1 (ko) 2003-06-25
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WO1998055238A1 (en) 1998-12-10
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