CN87105214A - 矩阵寻址平板显示器 - Google Patents
矩阵寻址平板显示器 Download PDFInfo
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Abstract
本发明描述了一种使用场发射型阴极的隘阵寻址平板显示器。阴极与显示器后平板结构成为一个整体,并激励屏面上的相应的阴极发光区域。在较佳实施方案中,屏面与阴极分开40微米,而在屏面和阴极之间的空间中为一真空。阴极基底的电气连接是穿过后平板结构的扩散部分。
Description
本发明涉及平板显示器,更具体化,本发明涉及一种利用了场发射阴极的矩阵寻址平板显示器。
阴极射线管在计算机的显示监视器、电视机等当中用来可见地显示信息。这种广泛应用是因为用了阴极射线管可以得到良好的显示质量,即良好的色彩、亮度、对比度和分辨率。带来这些优点的阴极射线管的一个主要特点是使用了复盖在透明屏面上的发光萤光粉。然而,通常的阴极射线管有着这样的缺点,即它们要求有相当大的管体深度,也就是在实际的显示屏幕后有一个空间,这就使得它们大而笨重。在许多重要的应用场合下,这种情况是有害的,例如,许多小型便携式计算机显示器和操作显示器中所能利用的深度限制了把阴极射线管用作显示的应用。因此,人们对努力提供令人满意的所谓“平板显示器”或“准平板显示器”表现出了很大的兴趣和作了许多的研究和开发,这些显示器没有典型的阴极射线管那种深度要求,而却有着相当的或更好的显示特性,例如亮度、分辨率、显示的通用性、功率需求等等。但制造适合某些应用的平板显示器的这些尝试还没能造出能与通常的阴极射线管相比拟的显示器。
本发明涉及到一种平板显示结构,它应用了在阴极射线管中所用的那类发光萤光粉的优点,同时又保持着薄的显示本体。它包括可独立寻址的光发生装置构成的矩阵阵列,最好包括有着与阴极射线管类型的发光装置相结合的阴极发光型矩阵阵列,在这些阴极射线管型发光装置中,电子轰击下发出可见光。每一个阴极本身最好就是一个薄膜场发射阴极的阵列,而该发光装置最好被覆在距上述阴极很近的透明屏面上。此小间距之所以重要不仅在于它提供了整个显示器所希望的薄的厚度,而且也确保了高分辨率的实现。也就是说,因为电子源和显示屏之间的距离缩短了,电子不通过所希路径而流过任意途径的倾向减小了,从而得到清晰、鲜明的象素。本发明并不是把薄膜场发射阴极与透明屏面相结合,以获得平板显示器的第一次尝试。1970年3月10日授予克劳斯特(Crost)等人的美国专利第3,500,102号中乙广泛公开了这种方案。虽然克劳斯特等人的专利的确公开了这个广泛的概念,但其结构并不能提供令人满意的显示效果。此专利并没有讨论防止电极之间发生气体击穿或
崩电离的重要性,也没有讨论如何防止这些情况的出现。此外可以认为由于在抽空结构中大气压的作用力造成了透明屏面的变形,根据克劳斯特等人的专利的教导所制造的实际平板显示器将在屏幕上显现出明显的畸变。在陈列中相邻阴极基底之间电绝缘问题也没有提到。
本发明的一个明显特点是,选定发光装置和阴极之间的间隔,使之等于或小于在电极间空间中压强之下的电子平均自由程。这种紧密靠近明显地减小了发生气体击穿或
崩电离的可能性。也就是说,它明显地减小了电极间空间中气体分子电离的可能性,而这种电离有可能导致这种击穿或
崩电离。
本发明还包括每一象素的电气连接结构,这使得有着与场发射型阴极相联系的最小电极间隔的所希矩阵寻址成为可能。也就是说,阴极基底穿过后平板结构向外延伸,使所需的电气连接分布在密封的、抽空的环境之外,从而使阴极和驱动电路之间的电连接变得更为方便。在有着阴极阵列的平板显示器中,因为有着大量的阴极以及它们之间十分靠近的间隔,这一点有着特殊的优越性。这种设置的一个重要方面是采取步骤来防止相邻阴极之间的电“串扰”。后平板结构最好为半导体材料,比如是硅,而与每一个阴极基底的独立电气连接是一个导电部分,比如是通过半导体材料的扩散区。半导体材料是N型材料,而对阴极的导电部分是P型材料,当任何一个特定的阴极导电部分加上负电位时,就会形成一个反偏PN结,这个反偏PN结把此导电部分与支后平板中的其余的导电部分自动化电绝缘开,从而提供了一个绝缘壁垒。
图1是本发明的显示板的较佳实施方案的整体等角简图;
图2是图1所表明的本发明较佳实施方案的放大了的部分分解图;
图3是表明较佳实施例的单个象素的放大了的截面图;
图4是表明寻址方式的本发明较佳实施例的方块简图;而
图5是表明另一种结构的,类似于图2中部分的、放大了的等角图。
参考图1到图4来说明本发明的平板显示器的较佳实施方案。对较佳实施例的一个简单表示方式是通常以参考数号11来表示。它包括一个透明屏面(或结构)12和一个后平板(或结构)13。在后平板和屏面之间有一个阴极矩阵阵列。每一个阴极包括一组场发射尖以及象在例如说美国专利第3,665,241、3,755,704和3,791,471号(发明人都是查齐斯·A·斯宾特Charles A·Spindt)中描述的那种构成整体的吸出电流电极。三个这种阴极构成一个象素,每一个象素具有三基色-红、绿和兰色。
图2清楚地表明了在本发明的较佳实施例中这种阴极的相互结合方式。在此连结中,利用场发射型阴极的一个好处是它们能够与限定出真空空间的平板之一的后平板直接构成一个整体。所描述的较佳实施方案是设计成用于多色显示的,并且遵循着前述每一象素包括三个独立的阴极的规则。后平板结构13能够由半导体材料,例如硅构成,而每一象素的三个阴极有一个公共基底14,此公共基底是一个穿过后平板结构延伸的导电部分,并且是用例如是标准扩散或热迁移(一种扩散形式)技术来完成的。把电极穿过后平板结构延伸的这种阴极基底方式减轻了把矩阵驱动器穿过真空结构与阴极基底作电连接的困难。这种连接能够通过例如是图3所示的导电金属薄带6或后平板的外部上的类似物来完成。如前所述,如果后平板结构是一种半导体材料,它应当是N型半导体材料,并有着穿过这种后平板结构实现电连接的P型导电区域。当随后把一个负电位加到一个P型区域时,相邻于此区域的边界处形成一个反偏PN结,从而把此P型区域与其它P型导电区域相隔离或电绝缘起来。虽然用反偏PN结来隔离半导体材料中的导电区域本身并不是新的技术,但用作本发明的一个方向有着具体的好处,这是因为它有助于实现相邻阴极的紧密靠近,从而在平板显示中得到可接受的分辨率。形成导电区域的导电材料可以是例如穿过半导体材料扩散的铝。然而,应当注意到,后平板结构可以是一除硅而外的材料,或甚至是另一种半导体材料。例如,它可以是一种玻璃,它允许在它之上或穿过它实现电接触。
如图所示,每一个阴极包括许多间隔开的向着屏面结构12向上凸起的电子发射尖15通常每一个彩色单元根据显示的尺寸和所需的分辨率将包括一到几百个这种电子发射尖,由于实际的理由,图中不可能画出真实彩色单元的图样。相邻于这些电子发射尖安置导电栅极或吸出电流电极装置,以产生并控制来自这些尖发射的电子。它们与阴极基底条正交,并包括有电子发射尖发射的电子可以通过其中的栏孔。在每一个象素中包括三个不同的栅极17、18和19(见图3),每一个栅极对应于每一种基色。如图2中所清楚表明的,栅极17-19成条状,构成一组如图2所示的跨过后平板结构的前表面的、水平延伸的公共整行象素。用通常的光刻蚀技术能在电绝缘层21上容易地形成这种栅极电极,此电绝缘层21把每一象素的栅极与公共阴极基底电气地分开。
在此较佳实施方案中每一象素的阳极是一透明导电材料被复层或薄膜22比如氧化铟、锡的薄膜。每一象素的阳极复盖在除开有着下述间隔器的区域之外的屏面内表面上。
发出各基色的复有萤光粉的长条23、24和25置于薄层22之上。这种长条的每一条都与栅极条17、18和19的相应一个相对,并且延伸成多个象素。
在栅极电极和萤光粉条之间形成真空。真空度应达到使在给定的阴极-萤光屏空间中和壳体内其它地方能阻止有害的电子
崩电离击穿以及二次电子的产生。如前所述,最希望使内部电极间隔小于或等于在内部电极空间中的压强下的电子平均自由程。这种十分靠近大大地减小了内部电极空间中气体分子电离化的可能性,因而防止了气体击穿或
崩电离的可能性。
应当注意到,十分接近的阴极-萤光粉间隔使得栅极结构能用作为每一象素后的反射表面,以增加有效亮度。这就不需要包括一层被复在萤光粉上,电子必须穿过才能激发显示的反射层,比如铝膜。
将要考虑到,因为真空,在平板显示器上将有很大的大气压力,这将使显示器弯曲变形,并会使后平板结构与屏面之间的距离减小。为承受这种负载并维持屏面和象素阴极阵列之间的选定距离,设置了一种支撑结构。这种支撑结构包括长形的、与屏面成整体连接的平行腿间隔器27,它们散布于相邻象素列之间。这种腿能够置于象素之间而对图象显示分辨率和质量不产生有害的影响。如图3的放大视图所示的那样,腿27与后平板结构13在绝缘层21上简单地相邻接。这种腿提供了整个屏面区域的支撑,并且确保了栅极电极和萤光粉条之间空间中的真空不会导致屏面的有害变形。
按照通常的矩阵寻址方式,通过对成正交的阴极基底和栅极进行寻址,十分容易驱动阴极的矩阵阵列。阴极基底驱动和栅极驱动的正交关系在图1当中以方块28和29示出。为了表明对每一个阴极基底应当有三个栅极被独立地驱动这样一种关系,有三条连线由栅极驱动方块29延伸到显示器,而在阴极基底驱动方块28和显示器之间仅有一条连线。
图4表明,方块28和29在一个标准的矩阵寻址方案中所起的作用,以31表明的顺序数据总线通过缓冲级32把限定所希显示的数字数据送到以33表示的存储器中。微处理机34也控制存储器33的输出。如果是限定了一个字母数字式符号的信息,输出直接通过线36送到字符发生器37中,此字符发生器把限定所希字符的必需信息送到移位寄存器38,然后再控制栅极驱动电路的工作。另一方面,如果信息是非字母数字式符号信息,则这种信息直接由存储器33通过线29送到移位寄存器38。
以数号41表示的定时电路控制栅极驱动电路的工作,这种工作是与线42所代表的阴极基底激励同步进行的。沿着一条选定路径,例如沿着一列,显示器的阴极基底将被激励,而其余的基底不被激励。与阴极基底路径正交的选定路径上的栅极也将被激励,而其余的栅极也将不被激励。结果是选定象素的阴极基底和栅极将同时被激励,从而产生出使所希象素显示的电子。应当注意到,在本发明中,更为可取的是多个象素的整条线被同时激励,而不象通常的只激励个别的象素。逐条地激励这些线以形成一帧扫描,而不是按照光栅扫描方式相继地激励各个独立的象素。这样将确保每一象素有较长的工作周期以增强亮度。
图5表明了另一种结构。图5是类似于图1-4的实施方案的图2中所表明的阴极基底和栅极另件这部分的等角视图。在前一实施方案和图5所表明的实施方案间仅有的明显不同在于,对于单个象素来说,不是用公共阴极基底和三个栅极,而是使用了在实体上彼此分开的阴极基底31、32和33,以及公共的栅极34。要注意到,在构成独立的阴极基底的扩散区域之间有着在本实施例中 特别希望形成的反偏PN结。类似于前述实施方案的部分以相同的参考数号来表示。
虽然本发明按上述较佳实施例加以描述,但本领域的普通技术人员能够作出各种改变而未脱离它的精神。例如,虽然本发明最好用在有着场发射型阴极的阴极发光平板显示中,但对于其它类型的平板显示仍是适用的。栅极17到19也可以由扩散或延伸穿过后平板结构13的电气连接所驱动。此外,虽然描述了特定的寻址技术和电路,本发明仍然同样适用于其它的矩阵寻址方式。本权利要求书和等同的语言及结构会对所涉及的申请有着限制作用。
Claims (13)
1、一种平板显示器它包括:
A后平板结构;
B透明的屏面结构;
C位于上述后平板结构和屏面结构之间的可单个寻址的光发生装置的矩阵阵列;
D用来激励上述阵列中选定的光发生装置的电驱动装置;以及
E与穿过上述后平板结构的上述光发生装置的每一个的独立电气连接。
2、根据权利要求1的平板显示器,其中上述可单个寻址光发生装置的矩阵阵列,包括位于上述后平板结构与屏面结构之间的一些可单个寻址阴极,以及在上述透明屏面结构处的、被上述阴极发射的电子所轰击而发出可见光的发光装置,该发光装置包括吸出电子的导电装置。
3、根据权利要求2的平板显示器,其中,所述阴极的每一个包括:
A 在所述后平板结构处有着一个或多个由所述后平板结构凸出的、间隔开的电子发射尖的导电基底;
B 位于上述电子发射尖附近的、用来产生和控制这些电子发射尖所发射的电子的导电栅极,该栅极含有可让上述电子发射尖发射的电子通过的栏孔;以及
C 把上述阴极基底与上述栅极电气地隔离开来的第一电绝缘层。
4、根据权利要求3的平板显示器,其中,所述阴极基底驱动装置被电气连接到所述阵列的阴极基底,用以单个地、按顺序激励一组第一通道中的一个所限定的阴极基底;以及上述栅极驱动装置被电气连接到上述阵列的栅极,用以单个地、按顺序激励横跨过上述第一组通路的一组第二通路中的一个所限定的栅极。
5、根据权利要求4的平板显示器,此显示器是一个彩色显示器,其中的每一个象素包括有着实体上彼此分开的基底的三个阴极。
6、根据权利要求2的平板显示器,其中,在上述阴极和所述导电装置之置的内部电极间距等于或小于在上述内部电极间隔中的电子平均自由程。
7、根据权利要求3的平板显示器,其中,所述第一电绝缘层是一层固体电介质。
8、根据权利要求1的平板显示器,其中,所述后平板结构在矩阵阵列处为半导体材料,而上述的穿过后平板结构的电气连接的每一个都是穿过上述半导体材料的导电部分。
9、根据权利要求8的平板显示器,其中,上述半导体材料是与导电部分相邻的N型材料,而上述导电部分是P型材料,这样,当一个负电位加到上述电气连接部分时,会形成使该导电部分与相邻导电部分电气隔离,从而提供了一个绝缘壁垒的反偏PN结。
10、根据权利要求8的平板显示器,其中,上述后平板结构的半导体材料是硅,而上述阴极的每一个的导电部分包括穿过上述的硅扩散的铝。
11、根据权利要求2的平板显示器,所述显示器是由彩色象素矩阵构成的彩色显示器,每一彩色象素包括三个上述的阴极。
12、一种平板显示器,它包括:
A 一个后平板结构;
B 一个透明的屏面结构;
C 一个位于上述后平板结构和屏面结构之间的可单个寻址的阴极矩阵阵列;
D 在上述透明屏面结构处的、被上述阴极发射的电子轰击而发出可见光的发光装置,此发光装置包括吸出电子的导电装置;
E 用来激励上述阵列中选定的阴极的电驱动装置;
F 在上述阴极阵列和上述导电装置之间的内部电极空间中的真空,这个真空使上述阴极阵列与导电装置之间有着电绝缘,以及
G 在上述阴极阵列和导电装置间的距离,所述距离等于或小于在内部电极空间的压强之下的电子平均自由程。
13、根据权利要求12的平板显示器,其中,上述可独立寻址的阴极的每一个包括:
A 在上述后平板结构处有着多个彼此分开的、自后平板凸起的电子发射尖的导电基底;
B 位于与上述电子发射尖附近的,用以产生和控制电子发射尖发射的电子的导电栅极,上述栅极包括可让自上述电子发射尖发射的电子通过的栏孔;以及
C 把上述阴极基底与上述栅极电气地隔离开的第一电绝缘层。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/891,853 US4857799A (en) | 1986-07-30 | 1986-07-30 | Matrix-addressed flat panel display |
US891853 | 1986-07-30 |
Publications (1)
Publication Number | Publication Date |
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CN87105214A true CN87105214A (zh) | 1988-03-23 |
Family
ID=25398933
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Application Number | Title | Priority Date | Filing Date |
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CN198787105214A Pending CN87105214A (zh) | 1986-07-30 | 1987-07-30 | 矩阵寻址平板显示器 |
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Country | Link |
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US (1) | US4857799A (zh) |
EP (1) | EP0316361A1 (zh) |
JP (1) | JPH02500065A (zh) |
KR (1) | KR880701962A (zh) |
CN (1) | CN87105214A (zh) |
WO (1) | WO1988001098A1 (zh) |
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-
1986
- 1986-07-30 US US06/891,853 patent/US4857799A/en not_active Expired - Fee Related
-
1987
- 1987-07-28 WO PCT/US1987/001747 patent/WO1988001098A1/en not_active Application Discontinuation
- 1987-07-28 JP JP62504990A patent/JPH02500065A/ja active Pending
- 1987-07-28 KR KR1019880700332A patent/KR880701962A/ko not_active IP Right Cessation
- 1987-07-28 EP EP87905499A patent/EP0316361A1/en not_active Withdrawn
- 1987-07-30 CN CN198787105214A patent/CN87105214A/zh active Pending
Cited By (1)
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CN1110835C (zh) * | 2000-03-03 | 2003-06-04 | 清华大学 | 电容存储型场助热电子发射平板显示器及其驱动方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH02500065A (ja) | 1990-01-11 |
KR880701962A (ko) | 1988-11-07 |
EP0316361A1 (en) | 1989-05-24 |
US4857799A (en) | 1989-08-15 |
WO1988001098A1 (en) | 1988-02-11 |
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