CN86105600A - Vacuum chemical reaction apparatus - Google Patents
Vacuum chemical reaction apparatus Download PDFInfo
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- CN86105600A CN86105600A CN198686105600A CN86105600A CN86105600A CN 86105600 A CN86105600 A CN 86105600A CN 198686105600 A CN198686105600 A CN 198686105600A CN 86105600 A CN86105600 A CN 86105600A CN 86105600 A CN86105600 A CN 86105600A
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- chemical reaction
- reaction apparatus
- hanging plate
- vacuum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
In a kind of vacuum chemical reaction apparatus, many hanging plate bases radially stretch out from a film hangers.A large amount of substrates is placed on the almost whole surface of each hanging plate base.The shape of each hanging plate base is a Polygons from front view.
Description
Briefly say, thereby the present invention relates to introduce the vacuum chemical reaction apparatus that reactant gas causes chemical reaction.More particularly, the present invention can handle many objects simultaneously with a kind of, and as semiconductor chip, the vacuum chemical reaction apparatus of electronic component and optical element is relevant.This vacuum chemical reaction apparatus can be used as the reactive ion etching device.Chemical vapor deposition device and surface processing device or the like.
The various conversion unit that carries out chemical reaction under vacuum state someone already proposed, in this class vacuum reaction equipment, for how pending object (calling " substrate ") sent in the reactor and to have done many effort with the problem of boosting productivity.
Summarize now this class vacuum reaction equipment in the prior art earlier.
According to a kind of method commonly used, many substrates are to be arranged on the single plane or on the whole surface of a three-dimensional rack.Applicant Tatsuo ASAMAK I for example of the present invention just described this method (Nikkan in the book that is entitled as " film forming key concept ", Kogyo Shinbun press, on July 30th, 1984 published, and the 1201st page, Fig. 5 .24(a).On this figure, many substrates are to be placed on the thin circular dull and stereotyped upper surface, similarly, as the 194th page of table 9.4C() shown in, many substrates are to be placed on the side surface of a cylindrical or square column (internal surface or outside surface).But, according to these prior art methods, can be placed in the lip-deep substrate quantity of base sheet rack and always be limited in a less number.
Another kind of prior art method is that application number is 59-159532(1984 in the Japanese unexamined patent of a title for " gas phase plasma processing ") specification sheets in introduced.Positive and negative two electrodes or two electrodes (under the radio-frequency power supply situation) alternately stack together in vertical direction each other.According to this method, on the surface on the forward and backward surface of each electrode, normally use insulating material topped, so substrate can only be placed on the surface, the quantity of the substrate that can adopt also just is restricted.
A target of the present invention is to improve these common shortcomings, is provided at the reliable vacuum chemical reaction apparatus of height that can settle many substrates in the cycle of treatment.
Another target of the present invention is will provide to settle substrate quantity identical with common vacuum chemical reaction apparatus, but the vacuum chemical reaction apparatus more compacter than common vacuum chemical reaction apparatus.
Another target of the present invention is will provide base sheet rack was powered with radio-frequency power supply, also can carry out even processing chamber vacuum chemical reaction apparatus.
These targets of the present invention can be finished by the vacuum chemical reaction apparatus that comprises following device is provided:
Under vacuum condition, can deposit many pending objects such as substrate, the vacuum chamber of electronic component and optical element etc.;
The pressure of internal vacuum chamber is evacuated to the air extractor of predetermined low pressure values;
After air extractor is finished the operation of bleeding, a kind of reactant gas is imported in the vacuum chamber, so that the surface energy of each object carries out the gas operated device of chemical reaction;
Many objects are remained on setting retainer means in the vacuum chamber;
The transmitting device that will the many objects outside vacuum chamber be transported to the setting retainer means that is positioned at vacuum chamber,
It is characterized in that:
This setting retainer means comprises film hangers and the many hanging plate bases that extend from film hangers, and the supporting member of many maintenance objects is arranged on these hanging plate bases, to allow plurality of physical objects overwork the whole surface of hanging plate base basically;
This film hangers can move in vacuum chamber, utilizes this to move, and has two objects that supported by this object supporting member at least, and can be transferred set is identical plane basically;
Acceptance is to be positioned at the object on the same level and to be sent to the device that e Foerderanlage goes from least two on the object supporting member basically.
Will make characteristics of the present invention become more clear and definite by the embodiment of following described the present invention's recommendation and in conjunction with the description of the drawings.
Shown in Fig. 1,2 and 3 is the vacuum chemical reaction apparatus embodiment of first recommendation of the present invention;
Fig. 4 and Fig. 5 are the embodiment sketches of second recommendation, wherein only show its constructional feature;
Fig. 6 to Figure 15 is other embodiment sketches of recommending, wherein only shows its constructional feature.
First vacuum chemical reaction apparatus scheme
Below describe with regard to the vacuum chemical reaction apparatus of the embodiment of first recommendation.
Fig. 1 is the vacuum chemical reaction apparatus front section view along the 1-1 line intercepting of Fig. 2.Fig. 2 is its section plan, and Fig. 3 is the part sectioned view of the vacuum chemical reaction apparatus embodiment of first recommendation.In these figure, the numeral 10 expression vacuum chambers of mark, 11 expression housings, the isolator of electrode is inserted in 12 expressions, the extraction pipe that 13 expressions are connected with air-bleed system (being represented by arrow).Have again, reference numbers 14 expression flanges, 15 expressions are delivered to cover plate in the housing 11,16 and 19 expression O shapes circles with substrate 41 to 46 by hole 17.Reference numbers 30 expressions are for the airing system of the reactant gas of introducing a preliminary election, and it is represented with an arrow in Fig. 1, can also connect the valve of changeable flow, or flow rate control device.Reference numbers 31 is the adapters that link with vacuum system, and 32 expressions are with the gas distribution mechanism of gas uniformly distributing on each substrate surface, and 33 represent many narrow holes.Reference numbers 40 is represented one group of substrate, pending object typically to be shown, 41 to 46 expression substrates.
Another kind of mode, medium are cooled off in advance or are heated to a predetermined temperature, the space 54 of flowing through then.The importing of medium and extraction are to be undertaken by the direction shown in the arrow 59.Reference numbers 60 is terminals of power supply, when substrate need add more heat than above situation, hot-plate 61 shown in just adopting on the substrate frame viewgraph of cross-section, the back side of hot-plate 61 is by a well heater 63(for example an infrared heat lamp or a coil heater) heating.The power supply of 64 expression well heaters, the transom that 62 expressions are made by a thin plate is fallen by radiation in order to the heat that prevents hot-plate 61.
Get back to Fig. 1 and come up, the supporting member 55 of substrate all is housed on the almost whole surface of hanging plate base 51.
The plane that reference numbers 57 representatives have set function is another characteristics of the present invention.When the substrate 41 and 42 of substrate group 40 is supported by supported member 55, by means of a suitable transport sector (not being shown specifically among the figure), film hangers 56 is moved along the direction shown in the arrow 58, and then substrate 41 and 42 just can be transferred on this predetermined plane 57.Like this, substrate just can be drawn (see figure 2) from vacuum chamber 10.
According to this programme, have an automatic gear 70(simply to represent with 70 in the outside of vacuum chamber 10), by opening cover plate 15, can be in order to transmit substrate.Also promptly when automatic gear 70 moves to the direction of aiming at hanging plate base 51 to 53, substrate just can be packed into or be taken out from vacuum chamber.
In order to realize processing operation highly reliably in vacuum chemical reaction apparatus, vacuum chamber 10 inside always remain under the vacuum state.Substrate frame 50, and film hangers 56 moves along arrow 58 directions and is good, and can be sent to a lot of substrates on the plane 57 like this, thereby be removed at an easy rate.
In Fig. 2, reference numbers 80 is illustrated in the magnetic field arrangement that the discharge of magnetic control tubular type is carried out in vacuum chamber 10 inside.The direction in magnetic field is with the direction unanimity of arrow 58, and 81 represent coils, the power supply that 82 expressions provide to coil 81.
Get back to Fig. 1 and come up, radio frequency source 90 is connected on the vacuum chemical reaction apparatus by a circuit match box 92.
The above-described embodiment according to the present invention according to purposes separately, can be revised equally and makes it be applicable to general reactive ion etching device, various types of etching devices, chemical vapor deposition device and surface processing device.
The reactive ion etching device
As previously mentioned, above vacuum chemical reaction device can specifically be applied to the reactive ion etching device.Consult Fig. 1 and 2, vacuum chamber 10 is evacuated to a predetermined pressure by air-bleed system 20.Under most of situation, vacuum chamber 10 is to become so-called " ultrahigh vacuum(HHV) " state.After the evacuate air, in vacuum chamber 10, feed a kind of preliminary election gas by gas directing system 30.Then the pressure in the vacuum chamber 10 is adjusted under the pressure of being scheduled to, and infeeds radio-frequency energy.The result just produces the discharge plasma shown in 93 hachure, and substrate 41 grades are just by reactive ion etching.
After predetermined plasma etching is finished in vacuum chamber 10, interrupt infeeding of radio-frequency energy.In vacuum chamber 10, introduce rare gas elementes such as nitrogen, argon gas then.The pressure that rare gas element is incorporated in the vacuum chamber 10 always arrives till the common barometric point.After this, open cover plate 15, utilize automatic gear 70 to engage as substrate transport device, the substrate of crossing through etching processing is taken out, and the substrate that other are new is put in the vacuum chamber 10 with film hangers 56.The conveying of substrate is along certain surface or carry out on the plane of automatic gear 70 57.After gas is found time, just carry out later operate continuously process.
When carrying out etching, the inside of vacuum chamber 10 always remains under a certain vacuum pressure, can adopt a valve (not being shown specifically) to replace cover plate 15, and preferably is connected on subsequently the vacuum chamber.That is to say that the vacuum chamber of such scheme will be according to Fig. 5 .23(b of publication that the front is mentioned); 5,23(d); 5.24(b) or 5.24(a) in (seeing the 119th to 120 page) disclosed mode redesign.What be worth to propose is, though valve has not been shown in those figure, in order by stages these vacuum chambers to be transferred to them separately on the required pressure in advance, it is fully essential that valve is received these vacuum chambers.Under this special situation.Substrate frame 50 is to move by the direction shown in the arrow 58, and substrate is that (if substrate 41 and substrate 42 intersect given angles, the sum on then above-mentioned set plane 57 just amounts to 6 from three sections taking-ups.Therefore, substrate must take out from these 6 planes 57).If do not adopt gas distributor 32, then therefore substrate frame 50 just can, take out the area of substrate and just can reduce doing further to transmit with arrow 58 perpendicular directions.
Low pressure chemical vapor deposition
According to the present invention, except that reactive ion etching, the operation that is used for the vacuum chemical reaction apparatus that substrate handles is very similar to above-mentioned embodiment, but, if this conversion unit is used as low pressure chemical vapor deposition (CVD) equipment.Just need different structures.Just need to adopt as shown in Figure 3 hanging plate base 51 and hot-plate 61, and hot-plate 61 is the substrate frame of therefrom taking out as substrate.In this case, need not provide radio frequency source in the equipment.But,, need to clear up near the plane 57 if passed through after several chemical vapour deposition cycle of treatment, just need be the same with aforesaid embodiment, carry out same etching processing.
According to the present embodiment, because equipment and electric field are perpendicular in advance in magnetic field, magnetic control tubular type sparking voltage is low, and the power height that produce along film hangers 56 surfaces, so can realize stronger reaction.And owing to reduced sparking voltage, the damage of Semiconductor Chemistry reaction is just few.
Moreover according to the present invention, vacuum chemical reaction apparatus also can adopt other design conditionss the same with standard equipment.For example, if except that substrate, chemical reaction is not wished to take place in other place, then can adopt following condition:
(1) under the situation that adopts discharge process, the place that does not need chemical reaction must be shielded with the appropriate insulation material.
(2) adopt not utilizing discharge under the situation that low pressure chemical vapor deposition handles, more than said place can be cooled to a lower temperature.
The front explains, and the present invention adopts a kind of substrate frame 50, and substrate 41 to 46 grades can be arranged in from film hangers 56 three-dimensionally and stretch on the almost whole surface of some hanging plate bases 51 to 53 that come out.Therefore, just might provide a kind of large-duty vacuum chemical reaction apparatus of in a little space, depositing the huge amount substrate.In other words, just under identical processing power, can make a kind of vacuum chemical reaction apparatus more compacter than conventional vacuum chemical reaction equipment.
Have, because substrate frame 56 is to be made by thick rod member, inductance value is less again, thereby its high-frequency resistance can ignore, and just can produce uniform plasma body to a large amount of substrates that are placed on the hanging plate base 51.This is the cause that distributes because of the potential difference that does not produce standing wave and do not take place to cause because of inductance.Thereby, in the process of treatment substrate, there is not difference basically, for example the formation speed of etching processing speed and film does not have difference, and can obtain to handle in a large number homogeneous substrate.In addition, utilize magnetic field then can reach high processing speed and lower working voltage.
Other embodiments of recommending
Fig. 4 (orthographic plan) and Fig. 5 (front view) show the embodiment of second recommendation.See from these figure, just substrate 41 and a new substrate frame 150, other device such as gas directing system etc. have dispensed for the purpose of simplifying.
What be worth to propose is, with same or analogous part shown in Fig. 1 to Fig. 3, and will be with identical reference numbers.
According to second embodiment, the length of its hanging plate base 151 to 153, comparing with original hanging plate base 51 to 53 is to have extended, so the quantity of substrate 41 to 46 can increase many (seeing Fig. 1 and Fig. 5) than first embodiment.In this scheme, substrate frame 150 can move along arrow 58, thereby substrate 41 to 46 can be input into and export vacuum chamber (not being shown specifically).When substrate frame 150 (see figure 4) when arrow 58 moves.Terminals 60 are the local (see figure 5)s that are fixed on perpendicular to Fig. 5 in-plane and the circle 600 that dots.Substrate frame 150 moves along this direction.
Clearly, the side-view of this substrate frame 150 has rectangular shape, and the trapezium-shaped that it is had with above-mentioned substrate frame 50 is (seeing Fig. 1 and Fig. 5) inequality.
See Fig. 6 and 7 now again, so that the embodiment of the 3rd recommendation is described.Fig. 6 and Fig. 7 are plan views.According to the 3rd embodiment, substrate 241 and 242 has the shape of rectangle and cylindrical column respectively, hanging plate base 251 and 252 shape same substrate 241 and 242 respectively adapt, thereby substrate 241 and 242 is topped discriminably on the surface of hanging plate base 251 and 252, when considering the shape of hanging plate base or substrate, hanging plate base 251 and 252 the position being set can selecting on film hangers 256 and 257 can reach higher density so that substrate hangs on the hanging plate base.Because the arrangement of film hangers 250 and 251 is to change with the shape of pending substrate, thereby vacuum chemical reaction apparatus just can be in order to handle various difform substrates.As polygon cone, polygon cone, cylinder and cone etc.
With reference to figure 8, Fig. 9 and Figure 10, they show the embodiment of the 4th recommendation, and the skeleton view of substrate frame 350,450 and 550 is arranged.In these figure, hanging plate base 351,451 and 551 is that the periphery from tubulose film hangers 356,456 and 556 stretches out, and a large amount of substrates 41 can hang on the both side surface of these hanging plate bases.Particularly according to the embodiment of recommendation shown in Figure 10, its advantage is that some large-scale substrates 541,543 and 545 can be placed on the hanging plate base 551.Equally, arrow 58 and 59 has been represented the transmission direction of film hangers 556.
As previously mentioned.The embodiment of Fig. 4 to Figure 10 is only expressed substrate frame, and other structure, is to have omitted as import system of gas etc.
It should be noted that, when whole zone all needs to be used for accurately treatment substrate, and gaseous tension is when low again, the parts that stretch out (as shown in Figure 1 gas distributor 32 and nozzle) just need be provided, so that can obtain uniform gas distribution and uniform electric field on the surface of substrate, these also are to have dispensed on figure.
The embodiment of the 5th recommendation is described now, please refer to Figure 11 to Figure 13, these figure only partly show the structure of substrate frame and hanging plate base in the mode of skeleton view.Though be appreciated that Figure 11, the structure shown in 12 and 13 has nothing in common with each other, and they still have the common constructional feature, thereby these structures just belong to the 5th embodiment.To embodiment shown in Figure 13, hanging plate base 651 and 751 generally all is the periphery in film hangers 656 and 756 according to Figure 11, form in radially-arranged mode, and a large amount of substrates 41,42 and 43 hangs on corresponding hanging plate base 651 and 751.
As from Figure 11 to 13 saw, it is in echelon that hanging plate base 651 and 751 shape are looked from front view.Have, according to the 5th embodiment, substrate frame 650 and 850 can be rotated (seeing Figure 11 Figure 12) by the axis of the direction shown in the arrow 58 around conduit 660 and 860 again.As a result, substrate 41,42 and 43 just can move at an easy rate.Therefore transporting mechanism is (as just doing simplyr by 70 represented automatic gear on Figure 12.When adding a lifting mechanism of employing (not being shown specifically among the figure) in order to promote substrate frame 850 in the direction shown in the arrow 581, then according to embodiment shown in Figure 12, many substrates just can be placed on the multiple hanging plate base.Therefore, a large amount of substrates just can be handled simultaneously therein.
Shielding slab that prevents substrate frame 750 surface-discharges of reference numbers 100 expressions among Figure 13.
At last, another recommends the chamber embodiment to be summarized with reference to Figure 14 and Figure 15, and the substrate frame 950 and 960 among the figure is orthographic plans.The basic thought of this embodiment and Figure 11 to the 5th embodiment shown in Figure 13 be identical.That is to say that hanging plate base 951 and 961 all is to come out from film hangers 956 that is positioned at central authorities and 966 circumferentially extending, as Figure 14 and shown in Figure 15.
As what seen from Figure 14 A and 14B, the surface 952 and 953 of two adjacent hanging plate bases 951 is (only the expressing the sideline on these surfaces 952 and 953 on Figure 14 A) that are arranged to be parallel to each other, and the shape of hanging plate base attempts to look like a fan from the plane.In Figure 15, separate by desired " α " angle from radially stretching each hanging plate base 961 that comes out, the shape of these hanging plate bases 961 is orthogonal basically.
The present invention is illustrated with regard to the embodiment of some recommendations, obviously, for those those skilled in the art that, do not leaving under the spirit condition of the scope of the invention, can also make various variation and substitute wherein corresponding parts.In addition, under the prerequisite of not leaving essentiality content of the present invention, also may make many modifications so that special situation or material adapt to explanation of the present invention.
For example, might select the direction in magnetic field to make it to keep constant or alternately change.Have again, on above-mentioned plane 57, also can adopt the magnetic field of rotation.Equally, in order to control strength of discharge, it also is possible changing field intensity.
As the detailed introduction that the front has been done, a large amount of substrate of this vacuum chemical reaction apparatus seasoning simultaneously according to method of the present invention, is handled all these substrates for simultaneously under reliable and stable condition.In other words, the present invention can provide a kind of substrate that can handle equal amts, but the vacuum chemical reaction apparatus more advanced, reliable and compacter than common vacuum chemical reaction apparatus.
Claims (15)
1, a kind of vacuum chemical reaction apparatus comprises:
Under vacuum condition, can deposit the vacuum chamber of many pending objects;
The pressure of internal vacuum chamber is evacuated to the air extractor of a low pressure values of being scheduled to;
After air extractor is finished evacuation, a kind of reactive gas is imported in the vacuum chamber, so that the surface energy of each object carries out the gas operated device of chemical reaction;
Many objects are remained on setting retainer means in the vacuum chamber;
The transmitting device that will the many objects outside vacuum chamber be transported to the setting retainer means that is positioned at vacuum chamber,
It is characterized in that:
This setting retainer means comprises film hangers and from many hanging plate bases that film hangers extends, the supporting member of many maintenance objects is arranged on the hanging plate base, to allow plurality of physical objects overwork the almost whole surface of hanging plate base basically;
This film hangers can move in vacuum chamber, utilizes this to move, and has two objects that supported by this object support member at least, and can be transferred set is identical plane basically;
Acceptance from this object supporting member at least two be the object that is positioned on the same level basically, and be sent to the device that e Foerderanlage goes.
2, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and this hanging plate base has another function as electrode, and utilizes exoelectrical reaction in vacuum chemical reaction apparatus.
3, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and this hanging plate base has another function as well heater, and vacuum chemical reaction apparatus is as CVD (Chemical Vapor Deposition) apparatus.
4, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and this film hangers transmits by linear fashion.
5, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and this film hangers is to rotate around a set axle.
6, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and the shape of this hanging plate base is mutually the same basically, and discoid form.
7, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and the shape of this hanging plate base is mutually the same basically, and becomes the orthogonal form.
8, according to the vacuum chemical reaction apparatus of claim 6, wherein this discous hanging plate base radially stretches out from this film hangers.
9, according to the vacuum chemical reaction apparatus of claim 7, wherein this orthogonal hanging plate base radially stretches out from this film hangers.
10, according to the vacuum chemical reaction apparatus of claim 6, wherein the hanging plate base of this dish type stretches out from this film hangers, and is parallel to each other.
11, according to the vacuum chemical reaction apparatus of claim 7, wherein this orthogonal hanging plate base stretches out from this film hangers, and is parallel to each other.
12, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and the shape of this hanging plate base is mutually the same basically, and becomes the rectangle column.
13, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is a kind of substrate, and the shape of this hanging plate base is mutually the same basically, and becomes cylindric.
14, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is an electronic component.
15, according to the vacuum chemical reaction apparatus of claim 1, wherein this pending object is an optical element.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60164670A JPS6223983A (en) | 1985-07-25 | 1985-07-25 | Vacuum chemical reactor |
| JP164670/85 | 1985-07-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN86105600A true CN86105600A (en) | 1987-02-04 |
Family
ID=15797595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN198686105600A Pending CN86105600A (en) | 1985-07-25 | 1986-07-25 | Vacuum chemical reaction apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6223983A (en) |
| KR (1) | KR890005267B1 (en) |
| CN (1) | CN86105600A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102242352A (en) * | 2010-05-14 | 2011-11-16 | 佛山市奇明光电有限公司 | Organometallic chemical vapor deposition machine |
| CN104178750A (en) * | 2013-05-21 | 2014-12-03 | 常州碳维纳米科技有限公司 | Suspension-type heating system |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10140761B4 (en) * | 2001-08-20 | 2004-08-26 | Infineon Technologies Ag | Wafer handler |
| JP2007284766A (en) * | 2006-04-19 | 2007-11-01 | Shimadzu Corp | Vertical plasma cvd apparatus |
| JP7160421B1 (en) | 2022-02-10 | 2022-10-25 | 株式会社シー・ヴィ・リサーチ | Film forming apparatus, film forming method and gas nozzle |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5117376B2 (en) * | 1971-11-10 | 1976-06-02 | ||
| FR2227640B1 (en) * | 1973-04-27 | 1977-12-30 | Radiotechnique Compelec | |
| JPS5091255A (en) * | 1973-12-12 | 1975-07-21 |
-
1985
- 1985-07-25 JP JP60164670A patent/JPS6223983A/en active Pending
-
1986
- 1986-07-25 KR KR1019860006093A patent/KR890005267B1/en not_active IP Right Cessation
- 1986-07-25 CN CN198686105600A patent/CN86105600A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102242352A (en) * | 2010-05-14 | 2011-11-16 | 佛山市奇明光电有限公司 | Organometallic chemical vapor deposition machine |
| CN104178750A (en) * | 2013-05-21 | 2014-12-03 | 常州碳维纳米科技有限公司 | Suspension-type heating system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR890005267B1 (en) | 1989-12-20 |
| JPS6223983A (en) | 1987-01-31 |
| KR870000960A (en) | 1987-03-10 |
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