CN85100030A - Thin film SnO 2 gas-sensitive element and manufacture method thereof - Google Patents
Thin film SnO 2 gas-sensitive element and manufacture method thereof Download PDFInfo
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- CN85100030A CN85100030A CN 85100030 CN85100030A CN85100030A CN 85100030 A CN85100030 A CN 85100030A CN 85100030 CN85100030 CN 85100030 CN 85100030 A CN85100030 A CN 85100030A CN 85100030 A CN85100030 A CN 85100030A
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- tin ash
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Abstract
A kind of thin film SnO 2 gas-sensitive element and manufacture method of having improved thereof.The heating film of this thin film SnO 2 gas-sensitive element is a tin dioxide film, and this film contains a certain amount of antimony, and sensitive membrane also is a tin dioxide film.This gas sensor stable performance, component interchangeability is good.And manufacture method is easy, good process repeatability, and the production efficiency height, the equipment of use is simple, and cost is low.
Description
The invention belongs to senser and manufacture method thereof.
Before the present invention makes, for the fire that prevents gases such as hydrogen, gas, liquefied petroleum gas, town gas, carbon monoxide and ethane to cause, blast and intoxication accident, in the employed air-sensitive alarm, adopt Ke Sike (Kousuke Zhokura) to go up the sintered-type gas sensor of report at " sensor technology and application " (Sensoron-Technologie und Anuendury) 79 phases of nineteen eighty-two (312 pages).This gas sensor is wrapped in sensitive material such as tin ash on the heater strip and makes through sintering, the reproducibility of its manufacture process is relatively poor, caused the interchangeability of element relatively poor, the prosperous people of grade of Zhang Yun has reported the situation of making thin film SnO 2 gas-sensitive element on " transducer collection of thesis " second (300 pages) thereafter.This article is pointed out, method with the radio frequency heating forms the tin ash sensitive membrane at substrate surface, coats ruthenic oxide at substrate back and forms heating film, is printing silver-colored palladium electrode on sensitive membrane and the heating film respectively then, the lead-in wire of burn-oning is made thin film SnO 2 gas-sensitive element.But must especially must use noble ruthenium and palladium, so the cost height through radio frequency heating and sintering in the manufacture process.
The purpose of this invention is to provide a kind of the improvement, component interchangeability is good, thin film SnO 2 gas-sensitive element with low cost.
Another object of the present invention provides the manufacture method of making this thin film SnO 2 gas-sensitive element, the sensitive membrane of especially making this element and being comprised and the process conditions of heating film.
Main points of the present invention are that the Main Ingredients and Appearance of the heating film of the thin film SnO 2 gas-sensitive element that is provided is a tin ash.The manufacture method of the thin film SnO 2 gas-sensitive element that is provided is through the cryochemistry deposition, in the substrate 1 positive tin ash sensitive membrane 2 that forms, to form tin ash heating film 3 at substrate 1 back side; Perhaps on a face of substrate 1, form tin ash heating film 3 earlier, on this heating film 3, form dielectric film 8, on this dielectric film 8, form tin ash sensitive membrane 2.Said sensitive membrane 2 and heating film 3 on respectively coat the silver slurry, make silver electrode 4,5,6 and 7 through sintering process, the metal lead-out wire 9,10,11 and 12 of burn-oning thereafter.Thereby make thin film SnO 2 gas-sensitive element provided by the present invention.
Fig. 1 and Fig. 2 are the structural representations of this thin film SnO 2 gas-sensitive element.Fig. 1 shows sensitive membrane 2 and heating film 3 respectively in the structure that front and back constituted of substrate 1.Fig. 2 shows the structure that sensitive membrane 2 and heating film 3 are all constituted on same of substrate 1.
The process conditions that prepare said tin ash sensitive membrane 2 are: source material is a butter of tin, substrate temperature is 300～500 ℃, the evaporating temperature of source material is 100～200 ℃, the oxygen flow that is used to carry source steam be the 2-3 liter/minute, the vacuum degree in the reaction chamber is 0.3～1 torr.The process conditions that prepare said tin ash heating film 3 are: source material is the butter of tin solution that contains antimony, and substrate temperature is 300～500
Flow is 0.06～0.5 ml/min, the oxygen flow that is used to carry solution vapor be the 2-3 liter/minute.
Thin film SnO 2 gas-sensitive element stable performance provided by the present invention, component interchangeability is good, is better than well known similar gas sensor. According to manufacture method provided by the invention, making thin film SnO 2 gas-sensitive element is to adopt common material such as butter of tin to prepare sensitive membrane and heating film, thereby has replaced precious metal material such as ruthenium and palladium. Equipment is simple, and manufacture method is easy, good process repeatability, and this not only can greatly enhance productivity but also can the decrease cost.
Claims (4)
1, a kind of thin film SnO 2 gas-sensitive element that mainly is made of substrate, sensitive membrane and heating film is characterized in that the main component of said heating film [3] is a tin ash.
2, a kind of manufacture method of thin film SnO 2 gas-sensitive element is characterized in that making tin ash sensitive membrane (2) through the cryochemistry deposition in substrate (1) front, makes tin ash heating film (3) at said substrate (1) back side; Perhaps on a face of substrate (1), make tin ash heating film (3) earlier, on this heating film (3), make dielectric film (8), on this dielectric film (3), make tin ash sensitive membrane (2).Coat the silver slurry respectively at the two ends on said tin ash sensitive membrane (2) and tin ash heating film (3) surface and make silver electrode (4), (5), (6) and (7), on said silver electrode (4), (5), (6) and (7), respectively burn-on metal lead-out wire (9), (10), (11) and (12).
3, according to the manufacture method of the said gas sensor of claim 2, it is characterized in that the process conditions that prepare said tin ash sensitive membrane (2) are: substrate temperature is 300～500 ℃, source material is a butter of tin, and the evaporating temperature of source material is 100～200 ℃.The oxygen flow that is used to carry source steam is 2～3 liters/minute, and the vacuum degree in the reaction chamber is 0.3～1 torr.
4, according to the manufacture method of the said gas sensor of claim 2, it is characterized in that the process conditions that prepare said tin ash heating film (3) are: substrate temperature is 300～500 ℃, source material is the butter of tin solution that contains antimony, and liquid inventory is that the oxygen flow that 0.06～0.5 ml/min is used to carry solution vapor is 2～3 liters/minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85100030 CN85100030A (en) | 1985-04-01 | 1985-04-01 | Thin film SnO 2 gas-sensitive element and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85100030 CN85100030A (en) | 1985-04-01 | 1985-04-01 | Thin film SnO 2 gas-sensitive element and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN85100030A true CN85100030A (en) | 1986-06-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 85100030 Pending CN85100030A (en) | 1985-04-01 | 1985-04-01 | Thin film SnO 2 gas-sensitive element and manufacture method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN85100030A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386844C (en) * | 2006-03-08 | 2008-05-07 | 浙江理工大学 | Method for preparing tin dioxide quantal-point |
| CN102161503A (en) * | 2011-03-04 | 2011-08-24 | 上海大学 | Preparation method of orthorhombic tin dioxide thin film |
| CN102809584A (en) * | 2012-07-26 | 2012-12-05 | 华中科技大学 | Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof |
| CN104198540A (en) * | 2014-09-18 | 2014-12-10 | 安徽工业大学 | Gas sensitive material for detecting low-concentration acetaldehyde |
-
1985
- 1985-04-01 CN CN 85100030 patent/CN85100030A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386844C (en) * | 2006-03-08 | 2008-05-07 | 浙江理工大学 | Method for preparing tin dioxide quantal-point |
| CN102161503A (en) * | 2011-03-04 | 2011-08-24 | 上海大学 | Preparation method of orthorhombic tin dioxide thin film |
| CN102161503B (en) * | 2011-03-04 | 2012-10-31 | 上海大学 | Preparation method of orthorhombic tin dioxide thin film |
| CN102809584A (en) * | 2012-07-26 | 2012-12-05 | 华中科技大学 | Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof |
| CN104198540A (en) * | 2014-09-18 | 2014-12-10 | 安徽工业大学 | Gas sensitive material for detecting low-concentration acetaldehyde |
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| WD01 | Invention patent application deemed withdrawn after publication |