CN2854532Y - Pressure resistance vector hydrophone device - Google Patents
Pressure resistance vector hydrophone device Download PDFInfo
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- CN2854532Y CN2854532Y CN 200520021573 CN200520021573U CN2854532Y CN 2854532 Y CN2854532 Y CN 2854532Y CN 200520021573 CN200520021573 CN 200520021573 CN 200520021573 U CN200520021573 U CN 200520021573U CN 2854532 Y CN2854532 Y CN 2854532Y
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- cantilever beam
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- quality
- beam structure
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Abstract
The utility model relates to a vector hydrophone, namely a piezoresistive vector hydrophone device, which is characterized in that: the cantilever beam structure (1) and the quality structure (4) used in the sensitive sound signals are made from the micromachining at the silicon monocrystalline chip. Plant the intermingled resistance (2) into the beam structure to sense the strain signals and bond with the silicon chip with a shallow grove structure (6) at the bond surface (5). The gas that is sealed in the spacing structure (3) can be used for generating the damping. A semiconductor pressure sensitive resistance (2) is positioned at the cantilever beam structure (1). The spacing structure (3) separates the cantilever beam structure (1) and the quality structure (4). The grove structure (6) is positioned at the bottom structure of the silicon monocrystalline material (7) and the silicon monocrystalline with a sensitive structure at the bond surface is statically sealed and cemented with the bottom structure of the silicon monocrystalline material (7). The utility model has the advantages of simple structure, low cost, safety and reliability, convenient for use, small volume and high sensitivity of the sensor and whose manufacturing process is very simple.
Description
Technical field: the utility model relates to vector hydrophone, is specially piezoresistance type vector nautical receiving set device.
Background technology: the appearance of vector hydrophone makes the amount of obtaining of sonar information by using obtain large increase, can only measure scalar (acoustic pressure) information from original, be converted to and measure scalar (acoustic pressure) information, can survey Vector Message (the particle vibration velocity of sound field again, acceleration etc.), the increasing of these quantity of information, processing benefits to sonar signal.At present, no matter domestic still external, what vector hydrophone adopted all is piezoelectric principle, utilizes the acoustic vector sensors of piezoelectric accelerometer making more representative with benjamin abroad.Its performance index are as follows:
Its vector hydrophone of doing of frequency response: 100Hz～2000Hz, sensitivity: 100mV/g, size: 〉=5cm has been applied to the submarine sonar system.The test process, when frequency was lower than 1k, when utilizing pulse comparative method for measuring acoustic pressure receiving sensitivity, signal had been difficult to measure under water in the sensitivity of seeing 100mV/g from sensitivity index.Domestic representational vector hydrophone is made by Harbin Engineering University, employing be piezoelectric principle.When nautical receiving set effective dimensions during less than 30mm, sensitivity is very low, utilizes that the acoustic pressure receiving sensitivity of pulse comparative method for measuring is low does not equally come out to survey.
Summary of the invention: the purpose of this utility model be to provide a kind of simple in structure, with low cost, safe and reliable, easy to use, volume is little, highly sensitive piezoresistance type vector nautical receiving set device.The purpose of this utility model is achieved in that it comprises cantilever beam structure (1), semiconductor voltage dependent resistor (VDR) (2), gap structure (3), quality structure (4), key and face (5), groove structure (6), single crystal silicon material bottom structure (7).On monocrystalline silicon piece, produce cantilever beam structure (1) and the quality structure (4) that is used for responsive acoustical signal by micromachined, on girder construction, implant doped resistor (2), be used to experience strain signal, and the silicon chip that shallow slot structure (6) is arranged with another sheet corruption key and face (5) key and, the gas that is sealed to gap structure (3) can be used for producing damping, semiconductor voltage dependent resistor (VDR) (2) is arranged on cantilever beam structure (1), gap structure (3) is with cantilever beam structure (1), quality structure (4) separately, groove structure (6) is arranged on single crystal silicon material bottom structure (7), the monocrystalline silicon and single crystal silicon material bottom structure (7) electrostatic sealing-in of sensitive structure arranged at key and face (5), bonding.The utility model has the advantages that: sensor bulk simple in structure, with low cost, safe and reliable, easy to use, that make is little, highly sensitive, and it is comparatively easy to manufacture process.
Description of drawings: Fig. 1 is the responsive primitive structural principle of piezoresistance type vector nautical receiving set of the present invention synoptic diagram; Fig. 2 is the responsive monocrystalline silicon quality structure of piezoresistance type vector nautical receiving set of the present invention Facad structure principle schematic; Fig. 3 is a piezoresistance type vector nautical receiving set monocrystalline silicon bottom structure principle schematic of the present invention.
Embodiment: on monocrystalline silicon piece, produce cantilever beam structure (1) and the quality structure (4) that is used for responsive acoustical signal by micromachined, on girder construction, implant doped resistor (2), be used to experience strain signal, and the silicon chip that shallow slot structure (6) is arranged with another sheet corruption key and face (5) key and, the gas that is sealed to gap structure (3) can be used for producing damping, semiconductor voltage dependent resistor (VDR) (2) is arranged on cantilever beam structure (1), gap structure (3) is with cantilever beam structure (1), quality structure (4) separately, groove structure (6) is arranged on single crystal silicon material bottom structure (7), the monocrystalline silicon and single crystal silicon material bottom structure (7) electrostatic sealing-in of sensitive structure arranged at key and face (5), bonding.
Claims (1)
1, a kind of piezoresistance type vector nautical receiving set device, it comprises cantilever beam structure (1), semiconductor voltage dependent resistor (VDR) (2), gap structure (3), quality structure (4), key and face (5), groove structure (6), single crystal silicon material bottom structure (7), it is characterized in that: on monocrystalline silicon piece, produce cantilever beam structure (1) and the quality structure (4) that is used for responsive acoustical signal by micromachined, on girder construction, implant doped resistor (2), be used to experience strain signal, and the silicon chip that shallow slot structure (6) is arranged with another sheet corruption key and face (5) key and, the gas that is sealed to gap structure (3) can be used for producing damping, semiconductor voltage dependent resistor (VDR) (2) is arranged on cantilever beam structure (1), gap structure (3) is with cantilever beam structure (1), quality structure (4) separately, groove structure (6) is arranged on single crystal silicon material bottom structure (7), the monocrystalline silicon and single crystal silicon material bottom structure (7) electrostatic sealing-in of sensitive structure arranged at key and face (5), bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520021573 CN2854532Y (en) | 2005-09-05 | 2005-09-05 | Pressure resistance vector hydrophone device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520021573 CN2854532Y (en) | 2005-09-05 | 2005-09-05 | Pressure resistance vector hydrophone device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2854532Y true CN2854532Y (en) | 2007-01-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520021573 Expired - Fee Related CN2854532Y (en) | 2005-09-05 | 2005-09-05 | Pressure resistance vector hydrophone device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2854532Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102426054A (en) * | 2011-10-29 | 2012-04-25 | 中北大学 | Monolithic integration composite range vector hydrophone |
| CN107246910A (en) * | 2017-06-15 | 2017-10-13 | 中北大学 | MEMS three-dimensional co-vibrating type vector hydrophones based on piezoresistive effect |
| CN110631688A (en) * | 2019-09-30 | 2019-12-31 | 南京元感微电子有限公司 | Vector underwater acoustic sensor |
-
2005
- 2005-09-05 CN CN 200520021573 patent/CN2854532Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102426054A (en) * | 2011-10-29 | 2012-04-25 | 中北大学 | Monolithic integration composite range vector hydrophone |
| CN107246910A (en) * | 2017-06-15 | 2017-10-13 | 中北大学 | MEMS three-dimensional co-vibrating type vector hydrophones based on piezoresistive effect |
| CN107246910B (en) * | 2017-06-15 | 2019-11-29 | 中北大学 | MEMS three-dimensional co-vibrating type vector hydrophone based on piezoresistive effect |
| CN110631688A (en) * | 2019-09-30 | 2019-12-31 | 南京元感微电子有限公司 | Vector underwater acoustic sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |