CN2351897Y - Laser diode pumping passive setting Q whole-solidification internal cavity frequency multiplier mixer laser - Google Patents
Laser diode pumping passive setting Q whole-solidification internal cavity frequency multiplier mixer laser Download PDFInfo
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- CN2351897Y CN2351897Y CN 97220349 CN97220349U CN2351897Y CN 2351897 Y CN2351897 Y CN 2351897Y CN 97220349 CN97220349 CN 97220349 CN 97220349 U CN97220349 U CN 97220349U CN 2351897 Y CN2351897 Y CN 2351897Y
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- 238000005086 pumping Methods 0.000 title description 10
- 238000007711 solidification Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 9
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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Abstract
The utility model provides a laser diode Q passively regulating frequency multiplier and mixer laser in a full solidifying chamber. The utility model forms large pulse in a chamber, which can enhance the frequency multiplier efficiency. Due to the adoption of a passive regulating Q, the structure of a laser is caused to be small and miniaturized, without a Q regulating high voltage power supply which is large and complicated.
Description
The present invention relates to opto-electronic device, particularly relate to a kind of passive Q-adjusted intracavity frequency doubling mixing laser device.
Laser diode (LD) pumping total solidifying laser device is compared with the conventional laser device and to be had little, the Miniaturized advantage of volume; Compare with laser diode that to have the angle of divergence little, advantages such as good beam quality.Existing LD pumping total solidifying laser device output wavelength is many at near-infrared, adopt intracavity frequency doubling or mixing after, in visible light output, be widely used in various optoelectronic devices, as the CD read and write device etc.Since wavelength decreases half, light can be stored up density and improve 4 times, so this intracavity frequency doubling mixing laser device market demand is very big.But the shortcoming of the LD pumping total solidifying laser device of this continuous running is: endovenous laser power is low, so the efficient of intracavity frequency doubling is low, generally all has only a few percent.For improving endovenous laser power, can be with transferring Q to realize, the existing Q that initiatively transfers needs complicated high frequency or high-voltage circuit system, makes the bulky of laser; Adopt gain to transfer Q, have a series of problems that pumping wavelength drift and circuit complexity etc. cause again.Document: " directly the be coupled Nd:YVO of pumping of laser diode
4Laser continuously running repeat fluctuation ratio q-operation frequently with height " (author: Wang the army and the people, Li Ruining etc., Chinese laser; the 23rd volume, the 12nd phase, in December, 1996; the 1057th page) introduced a kind of LD pumping and solidified passive Q-regulaitng laser entirely, can obtain to transfer Q output continuously at near-infrared.
Purpose of the present invention, be to provide a kind of passive Q-adjusted full curing intracavity frequency doubling mixing laser device of LD pumping with high conversion efficiency, adopt passive Q-adjusted scheme, under the prerequisite that does not make laser and circuit complicated thereof, improve the laser chamber internal efficiency, thereby realize the high efficiency running of intracavity frequency doubling, mixing.
Realize that technical scheme of the present invention is, LD laser 1, through beam coupler 2, pump light is coupled into laser crystal 3, crystal 3 plates the deielectric-coating that pump light is anti-reflection, optical maser wavelength is all-trans, as the laser cavity Effect of Back-Cavity Mirror near on the end face A of coupler 2, crystal 4 is passive Q-adjusted switch, and passive Q-adjusted switch can be used Cr
4+: YAG crystal or F
2 -: LiF crystal or Co
2+: MgF
2Crystal or Co
2+: KMgF
3Crystal or Ni
2+: MgO crystal or Ni
2+: KMgF
3Crystal or Ni
2+: MgF
2Crystal or Ni
2+: MnF
2Crystal or Cr:Ho:Tm:YAG crystal or Ho:YAG crystal or Er:YAG crystal or Tm:YAG crystal etc. are made; Crystal 5 is the second-order non-linear optical crystal that is used for frequency multiplication or mixing, can be KTP (KTiOPO
4) crystal or LBO (LiB
3O
5) crystal or LN (LiNbO
3) crystal or Mg:LiNbO
3Crystal or Fe:LiNbO
3Crystal or α-LiIO
3Crystal or BBO (β-BaB
2O
4) crystal or KD
*P (KD
2PO
4) crystal; Sphere (plane) partially reflecting mirror 6 is laser output cavity mirrors (front cavity mirror), can be as required, the deielectric-coating that plating output optical maser wavelength, output frequency multiplication or mixing laser wavelength or laser and frequency multiplication mixing are exported simultaneously, plane A and sphere (plane) partially reflecting mirror 6 constitutes laser resonant cavity.LD laser is through coupler 2, pump light is coupled into laser crystal 3, when pumping light power exceeds laser vibration threshold values, laser (between A face and speculum 6) starting oscillation, the passive Q-adjusted effect of crystal 4, in laser chamber, form the laser giant pulse, through crystal 5 frequency multiplication or laser with the pump light mixing after partially reflecting mirror 6 export.Laser of the present invention solidifies passive Q-regulaitng laser entirely with the LD pumping that Wang the army and the people are introduced to be compared, and its difference is to have in the laser resonant cavity frequency multiplication or mixing nonlinear optical crystal, and frequency multiplication or the output of mixing laser wavelength are arranged.
The giant pulse of the passive Q-adjusted formation of laser cavity internal cause makes the endovenous laser peak power improve several magnitude, intracavity frequency doubling mixing conversion efficiency can be improved an order of magnitude at least.
Accompanying drawing is laser diode-pumped passive Q-adjusted full curing intracavity frequency doubling mixing laser device schematic diagram, and wherein 1 is laser diode, the 2nd, and beam coupler, the 3rd, laser crystal, the 4th, passive Q-adjusted switch; The 5th, the second-order non-linear optical crystal crystal; The 6th, plane or spherical mirror.
A kind of typical embodiment now is provided, and accompanying drawing is laser diode-pumped passive Q-adjusted full curing intracavity frequency doubling mixing laser device schematic diagram, and wherein 1 is laser diode (LD), centre wavelength 808nm power output 1W; The 2nd, beam coupler, the 3rd, YVO
4Laser crystal, beam coupler 2 are coupled into YVO with pump light
4Laser crystal 3, YVO
4Crystal A face plates the 1.064 μ m film that is all-trans, and another side plates the anti-reflection and 0.532 μ m all-dielectric film of 1.064 μ m; The 4th, Cr
4+: the YAG crystal, it is as the passive Q-adjusted switch of saturated absorption type crystal; The 5th, ktp crystal is as frequency-doubling crystal; The 6th, spherical mirror plates that 1.064 μ m are all-trans and the anti-reflection deielectric-coating of 0.532 μ m, and its midplane A and sphere (plane) partially reflecting mirror 6 constitutes laser resonant cavities.
Claims (5)
1. laser diode-pumped passive Q-adjusted full curing intracavity frequency doubling mixing laser device, by pump laser diode (1), beam coupler (2), laser crystal (3), passive Q-adjusted switch (4), nonlinear optical crystal (5), output cavity mirror (6) is formed, and it is characterized in that having simultaneously in the laser resonant cavity passive Q-adjusted switch (4) and nonlinear optical crystal (5).
2. laser diode-pumped passive Q-adjusted full curing intracavity frequency doubling mixing laser device as claimed in claim 1 is characterized in that described passive Q-adjusted switch (4) can use Cr
4+: the YAG crystal is made.
3. laser diode-pumped passive Q-adjusted full curing intracavity frequency doubling mixing laser device as claimed in claim 1 is characterized in that described passive Q-adjusted switch (4) also can use F
2 -: LiF crystal or Co
2+: MgF
2Crystal or Co
2+: KMgF
3Crystal or Ni
2+: MgO crystal or Ni
2+: KMgF
3Crystal or Ni
2+: MgF
2Crystal or Ni
2+: MnF
2Crystal or Cr:Ho:Tm:YAG crystal or Ho:YAG crystal or Er:YAG crystal or Tm:YAG crystal etc. are made.
4. laser diode-pumped passive Q-adjusted full curing intracavity frequency doubling mixing laser device as claimed in claim 1 is characterized in that described nonlinear optical crystal (5) can be KTP (KTiOPO
4) crystal.
5. laser diode-pumped passive Q-adjusted full curing intracavity frequency doubling mixing laser device as claimed in claim 1 is characterized in that described nonlinear optical crystal (5) also can be LBO (LiB
3O
5) crystal or LN (LiNbO
3) crystal or Mg:LiNbO
3Crystal or Fe:LiNbO
3Crystal or α-LiIO
3Crystal or BBO (β-BaB2O
4) crystal or KD
*P (KD
2PO
4) crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97220349 CN2351897Y (en) | 1997-07-04 | 1997-07-04 | Laser diode pumping passive setting Q whole-solidification internal cavity frequency multiplier mixer laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97220349 CN2351897Y (en) | 1997-07-04 | 1997-07-04 | Laser diode pumping passive setting Q whole-solidification internal cavity frequency multiplier mixer laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2351897Y true CN2351897Y (en) | 1999-12-01 |
Family
ID=33936056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97220349 Expired - Fee Related CN2351897Y (en) | 1997-07-04 | 1997-07-04 | Laser diode pumping passive setting Q whole-solidification internal cavity frequency multiplier mixer laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2351897Y (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690692B2 (en) | 2002-01-29 | 2004-02-10 | Hans Laser Technology Co., Ltd. | Third harmonic laser system |
| CN1328831C (en) * | 2005-02-02 | 2007-07-25 | 中国科学院物理研究所 | Active and passive Q-adjusted single longitudinal mode laser |
| CN100495837C (en) * | 2001-09-20 | 2009-06-03 | 克拉斯泰克-卡尔普什高激光技术有限公司 | Intracavity frequency conversion of laser radiation |
| CN101207264B (en) * | 2007-11-30 | 2010-06-02 | 西安电子科技大学 | Method of diode pumping solid laser for active controlling and passive regulating Q |
| CN102414943A (en) * | 2010-03-02 | 2012-04-11 | 松下电器产业株式会社 | Wavelength conversion device and image display device employing same |
| CN103872564A (en) * | 2014-03-25 | 2014-06-18 | 中国工程物理研究院应用电子学研究所 | Compact broad tuning intermediate infrared intracavity optical parameter oscillator |
| CN104767111A (en) * | 2015-04-25 | 2015-07-08 | 南京中科神光科技有限公司 | Structure-compact high power all-solid-state laser |
| CN104767110A (en) * | 2015-04-22 | 2015-07-08 | 南京中科神光科技有限公司 | Multi-wavelength diode pumped solid state frequency-mixing laser |
| CN115832857A (en) * | 2023-02-14 | 2023-03-21 | 长春理工大学 | Compact long-pulse pump laminated variable-frequency high-energy Q-switched laser and method |
-
1997
- 1997-07-04 CN CN 97220349 patent/CN2351897Y/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100495837C (en) * | 2001-09-20 | 2009-06-03 | 克拉斯泰克-卡尔普什高激光技术有限公司 | Intracavity frequency conversion of laser radiation |
| US6690692B2 (en) | 2002-01-29 | 2004-02-10 | Hans Laser Technology Co., Ltd. | Third harmonic laser system |
| CN1328831C (en) * | 2005-02-02 | 2007-07-25 | 中国科学院物理研究所 | Active and passive Q-adjusted single longitudinal mode laser |
| CN101207264B (en) * | 2007-11-30 | 2010-06-02 | 西安电子科技大学 | Method of diode pumping solid laser for active controlling and passive regulating Q |
| CN102414943A (en) * | 2010-03-02 | 2012-04-11 | 松下电器产业株式会社 | Wavelength conversion device and image display device employing same |
| CN102414943B (en) * | 2010-03-02 | 2014-05-07 | 松下电器产业株式会社 | Wavelength conversion device and image display device employing same |
| CN103872564A (en) * | 2014-03-25 | 2014-06-18 | 中国工程物理研究院应用电子学研究所 | Compact broad tuning intermediate infrared intracavity optical parameter oscillator |
| CN104767110A (en) * | 2015-04-22 | 2015-07-08 | 南京中科神光科技有限公司 | Multi-wavelength diode pumped solid state frequency-mixing laser |
| CN104767111A (en) * | 2015-04-25 | 2015-07-08 | 南京中科神光科技有限公司 | Structure-compact high power all-solid-state laser |
| CN115832857A (en) * | 2023-02-14 | 2023-03-21 | 长春理工大学 | Compact long-pulse pump laminated variable-frequency high-energy Q-switched laser and method |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |