CN101159363A - LD terminal pump Nd:YVO4/KTP yellow light laser - Google Patents
LD terminal pump Nd:YVO4/KTP yellow light laser Download PDFInfo
- Publication number
- CN101159363A CN101159363A CNA2007101130731A CN200710113073A CN101159363A CN 101159363 A CN101159363 A CN 101159363A CN A2007101130731 A CNA2007101130731 A CN A2007101130731A CN 200710113073 A CN200710113073 A CN 200710113073A CN 101159363 A CN101159363 A CN 101159363A
- Authority
- CN
- China
- Prior art keywords
- ktp
- crystal
- yvo
- laser
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a LD end-pumped Nd: YVO4KTP yellow Laser, belonging to the solid laser field. The invention utilizes a LD end-pumped c-cut Nd: YVO4 doped to generate a Raman laser from a Raman crystal, the Raman laser carries out the intra-cavity double frequency by a double frequency crystal KTP and finally the yellow laser is generated. The invention is characterized in that the Laser adopts the c-cut Nd: YVO4 doped from the Raman crystal as a laser media and a Raman medium as well. The yellow Laser has the advantages of the small volume, stable performance, high power, lower cost, etc., thereby having wide practicality.
Description
(1) technical field
The present invention relates to a kind of solid state laser, particularly a kind of LD end pump Nd:YVO
4/ KTP Yellow light laser.
(2) background technology
At present external relevant for the report of solid Yellow light laser, they mainly adopt dual mode to realize: the one, with two-beam and frequency (Intracavity sum-frequency generation of 3.23 W continuous-wave yellow light in anNd:YAG laser, " Optics Communications ", Vol.255,2005,248-252), the 2nd, in the chamber, use frequency doubling technology (Efficient all-solid-state yellow laser source producing 1.2-W average power, " Optics Letters ", Vol.24,1999,1490-1492).Compare with the method for intracavity frequency doubling and method frequently to have a volume big, power is low, conversion efficiency is poor, structural instability is difficult to shortcomings such as realization.And mostly present intracavity frequency doubling is to adopt three lithium borate monocrystalline (LBO) to do frequency-doubling crystal, but lithium triborate crystal LBO has easy deliquescence, the price height, non linear coefficient is little, and the phase matched temperature influence is bigger, needs to keep harsh conditions restrictions such as temperature constant, and is wayward.
(3) summary of the invention
For overcoming the defective of prior art, little with the realization volume, the power height, the big and constitutionally stable Yellow light laser of conversion efficiency the invention provides a kind of LD end pump Nd:YVO
4/ KTP Yellow light laser.
A kind of LD end pump Nd:YVO
4/ KTP Yellow light laser comprises laser diode LD end pumping source, optical fiber, coupled lens, resonant cavity, Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal; The pump light that is sent by LD end pumping source enters in the resonant cavity through optical fiber and coupled lens, it is characterized in that resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, and front end is an Effect of Back-Cavity Mirror, and the rear end is an outgoing mirror, places Nd-doped yttrium vanadate Nd:YVO in the resonant cavity successively
4Self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal; Above-mentioned crystal outside all surrounds with the metal derby that has open-work and pipeline, and crystal places in the open-work of metal derby, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
Described laser diode LD end pumping source is 808nm LD end pumping source.
Described Nd-doped yttrium vanadate Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that two end faces of self-raman crystal all are coated with wavelength, Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal produces fundamental frequency light both as laser medium, also makes the Raman medium simultaneously, is Raman light with the fundamental frequency phototransformation that produces.Nd-doped yttrium vanadate Nd:YVO
4The cut direction of self-raman crystal is the c direction of principal axis cutting along the physics definition.
Described acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of adjusting Q crystal all are coated with wavelength; The rf wave modulating frequency is 8-30KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
It is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of described KTP ktp crystal all are coated with wavelength, and the KTP ktp crystal is converted into gold-tinted as frequency-doubling crystal with Raman light.
Described Effect of Back-Cavity Mirror is coated with wavelength is the anti-reflection film of the pump light of 808nm and is the high anti-film of light of 1000nm-1200nm to wavelength.
It is the high anti-film of light of 1000nm-1200nm that described outgoing mirror is coated with wavelength, and this film is that the light of 587nm has high transmissivity to wavelength.
Described c cuts Nd-doped yttrium vanadate Nd:YVO
4The doping content of self-raman crystal is 0.2%-1%.
The curvature of Effect of Back-Cavity Mirror and outgoing mirror can be selected according to actual conditions.C cuts Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that self-raman crystal, frequency-doubling crystal KTP and acousto-optic Q modulation crystal all are coated with wavelength.Self-raman crystal Nd:YVO
4Doping content be 0.2%-1%, Nd:YVO
4Having bigger emission cross section, is a kind of good laser medium, and it also has good Raman active, very suitable needs of the present invention simultaneously.Ktp crystal need consider according to circumstances that the phase matched angle cuts, and can effectively improve the performance of laser like this.The length of all crystals among the present invention all can be chosen according to specific requirement; The face area of crystal can be determined according to the area of beam cross section.
Because Raman effect is the nonlinear effect on three rank, need fundamental frequency light to have higher peak power, so we use Q-modulating device in laser, can improve the peak power of fundamental frequency light so greatly, thereby improve the conversion efficiency of fundamental frequency light to Raman light, significantly increase the power output of yellow laser, effectively raised the performance of this laser.
The workflow of laser is as follows: the wavelength that send in LD end pumping source is that the pump light of 808 nm enters c through optical fiber and coupled lens and cuts Nd:YVO
4Crystal, when the Q-switch of acousto-optic Q modulation device was closed, pump light transferred the counter-rotating particle to and stores; When Q switching was opened, a large amount of counter-rotating particle moment of saving bit by bit transferred fundamental frequency light to by stimulated radiation; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers Raman light to; Raman light transfers gold-tinted at KTP frequency-doubling crystal place to through frequency-doubled effect at last, and is exported by outgoing mirror.
The present invention proposes a kind of new compound mode, use laser diode LD end pumping source, c cuts Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal, the KTP frequency-doubling crystal, adopt the mode of intracavity frequency doubling Raman light to produce yellow laser, the various shortcomings of above-mentioned laser have successfully been solved, a kind of new total solids high power Yellow light laser is provided, owing to adopt the method from Raman to produce Raman light, self-raman crystal is not only done laser medium but also do the Raman medium, the laser that separates than laser medium and Raman medium lacks uses a crystal, thereby the volume of this laser is littler.The volume of laser head of the present invention is about 10cm * 10cm * 17cm, and little with the volume of comparing in the background technology, cost is low, the efficient height, and light conversion efficiency can reach 7%, and the power output of gold-tinted can reach 500mW, and stable performance.
(4) description of drawings
Fig. 1 is a laser light path structural representation of the present invention.
Wherein: 1.LD end pumping source, 2. optical fiber, 3. coupled lens, 4. Effect of Back-Cavity Mirror, 5.c cuts the Nd-doped yttrium vanadate crystal, 6. acousto-optic Q modulation device, 7.KTP crystal, 8. outgoing mirror.
(5) embodiment
Embodiment 1:
Apparatus of the present invention comprise that laser diode LD end pumping source 1, optical fiber 2, coupled lens 3, resonant cavity, c cut Nd-doped yttrium vanadate Nd:YVO as shown in Figure 1
4 Crystal 5, acousto-optic Q modulation device 6 and KTP ktp crystal 7; The pump light that is sent by LD end pumping source 1 enters in the resonant cavity through optical fiber 2 and coupled lens 3, it is characterized in that resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 8, front end is an Effect of Back-Cavity Mirror 4, and the rear end is an outgoing mirror 8, places c in the resonant cavity successively and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, acousto-optic Q modulation device 6 and KTP ktp crystal 7; Above-mentioned crystal outside all surrounds with the metal derby that has open-work and pipeline, and crystal places in the open-work of metal derby, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
Described laser diode LD end pumping source 1 is 808nm LD end pumping source.
Described c cuts Nd-doped yttrium vanadate Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that two end faces of self-raman crystal 5 all are coated with wavelength, and c cuts Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal 5 produces fundamental frequency light both as laser medium, also makes the Raman medium simultaneously, is Raman light with the fundamental frequency phototransformation that produces.
Described acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of adjusting Q crystal all are coated with wavelength; The rf wave modulating frequency is 10KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
It is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of described KTP ktp crystal 7 all are coated with wavelength, and KTP ktp crystal 7 is converted into gold-tinted as frequency-doubling crystal with Raman light.
The radius of curvature of described Effect of Back-Cavity Mirror 4 is 3000mm, and is coated with wavelength is the anti-reflection film of the pump light of 808nm and is the high anti-film of light of 1000nm-1200nm to wavelength.
It is the high anti-film of light of 1000nm-1200nm that described outgoing mirror 8 is coated with wavelength, and this film is that the light of 587nm is high saturating to wavelength.
Described c cuts Nd-doped yttrium vanadate NdYVO
4The doping content of crystal 5 is 0.3%.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source 1 enters c through optical fiber 2 and coupled lens 3 and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1066.7nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers the 1178.7nm Raman light to; Raman light transfers the 589nm gold-tinted at KTP frequency-doubling crystal 7 places to through frequency-doubled effect at last, and by outgoing mirror 8 outputs.
Embodiment 2:
Identical with embodiment 1, the rf wave modulating frequency that is described acousto-optic Q modulation device 6 is 15KHz; C cuts Nd-doped yttrium vanadate Nd:YVO
4The doping content of crystal 5 is 0.5%, and the radius of curvature of Effect of Back-Cavity Mirror 4 is 1000mm.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source 1 enters c through optical fiber 2 and coupled lens 3 and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1066.7nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers the 1178.7nm Raman light to; Raman light transfers the 589nm gold-tinted at KTP frequency-doubling crystal 7 places to through frequency-doubled effect at last, and by outgoing mirror 8 outputs.
Embodiment 3:
Identical with embodiment 1, the rf wave modulating frequency that is described acousto-optic Q modulation device 6 is 25KHz; C cuts Nd-doped yttrium vanadate Nd:YVO
4The doping content of crystal 5 is 0.6%, and the radius of curvature of Effect of Back-Cavity Mirror 4 is 1000mm.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source 1 enters c through optical fiber 2 and coupled lens 3 and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1066.7nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers the 1178.7nm Raman light to; Raman light transfers the 589nm gold-tinted at KTP frequency-doubling crystal 7 places to through frequency-doubled effect at last, and by outgoing mirror 8 outputs.
The core diameter of the coupled fiber 2 among above-mentioned three embodiment is 400 μ m, and numerical aperture is 0.22, and maximum power output is 32W; Outgoing mirror 8 is flat mirror; And all crystals all passes through water-cooled cooling.
Claims (9)
1. a LD holds pump Nd:YVO
4/ KTP Yellow light laser comprises laser diode LD end pumping source, optical fiber, coupled lens, resonant cavity, Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal; The pump light that is sent by LD end pumping source enters in the resonant cavity through optical fiber and coupled lens, it is characterized in that resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, and front end is an Effect of Back-Cavity Mirror, and the rear end is an outgoing mirror, places Nd-doped yttrium vanadate Nd:YVO in the resonant cavity successively
4Self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal; Above-mentioned crystal outside all surrounds with the metal derby that has open-work and pipeline, and crystal places in the open-work of metal derby, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
2. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser is characterized in that described laser diode LD end pumping source is 808nm LD end pumping source.
3. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser is characterized in that described Nd-doped yttrium vanadate Nd:YVO
4Cut direction be c direction of principal axis along physics definition, this self-raman crystal had both been done laser medium, did the Raman medium again.
4. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser is characterized in that described acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of adjusting Q crystal all are coated with wavelength; The rf wave modulating frequency is 8-30KHz.
5. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser, it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface that it is characterized in that described KTP ktp crystal all are coated with wavelength.
6. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser is characterized in that described Effect of Back-Cavity Mirror is coated with wavelength is the anti-reflection film of the pump light of 808nm and is the high anti-film of light of 1000nm-1200nm to wavelength.
7. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser is characterized in that it is the high anti-film of light of 1000nm-1200nm that described outgoing mirror is coated with wavelength, this film and be that the light of 587nm is high saturating to wavelength.
8. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser is characterized in that described c cuts Nd-doped yttrium vanadate Nd:YVO
4The doping content of self-raman crystal is 0.2%-1%.
9. LD end pump Nd:YVO as claimed in claim 1
4/ KTP Yellow light laser is characterized in that described c cuts Nd-doped yttrium vanadate Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that two end faces of self-raman crystal all are coated with wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101130731A CN101159363A (en) | 2007-11-06 | 2007-11-06 | LD terminal pump Nd:YVO4/KTP yellow light laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101130731A CN101159363A (en) | 2007-11-06 | 2007-11-06 | LD terminal pump Nd:YVO4/KTP yellow light laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101159363A true CN101159363A (en) | 2008-04-09 |
Family
ID=39307337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101130731A Pending CN101159363A (en) | 2007-11-06 | 2007-11-06 | LD terminal pump Nd:YVO4/KTP yellow light laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101159363A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009375A (en) * | 2014-04-03 | 2014-08-27 | 青岛镭视光电科技有限公司 | Yellow-light self-Raman laser |
| CN105375328A (en) * | 2015-12-08 | 2016-03-02 | 中国石油大学(华东) | Laser device based on self-raman and OPO combination |
| CN105811238A (en) * | 2016-05-11 | 2016-07-27 | 中国科学院上海光学精密机械研究所 | Method for preparing high-power laser head based on c-cut crystal |
-
2007
- 2007-11-06 CN CNA2007101130731A patent/CN101159363A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009375A (en) * | 2014-04-03 | 2014-08-27 | 青岛镭视光电科技有限公司 | Yellow-light self-Raman laser |
| CN105375328A (en) * | 2015-12-08 | 2016-03-02 | 中国石油大学(华东) | Laser device based on self-raman and OPO combination |
| CN105375328B (en) * | 2015-12-08 | 2018-09-21 | 中国石油大学(华东) | It is a kind of based on the laser being combined from Raman with OPO |
| CN105811238A (en) * | 2016-05-11 | 2016-07-27 | 中国科学院上海光学精密机械研究所 | Method for preparing high-power laser head based on c-cut crystal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101308991A (en) | Coupling cavity Raman frequency doubling completely solid yellow laser | |
| CN103996968B (en) | A kind of compound cavity configuration from Raman Yellow light laser | |
| CN103618205A (en) | Full-solid-state single longitudinal mode yellow light laser | |
| CN102761051A (en) | Small continuous wave safety raman laser for human eye | |
| CN102208745A (en) | Miniaturized passive Q-switching eye-safe Raman laser | |
| CN101299512A (en) | Self Raman multiple frequency complete-solid yellow light laser | |
| CN101308993A (en) | Inner chamber Raman frequency doubling completely solid yellow laser | |
| CN201149952Y (en) | Self Raman multiple frequency solid yellow light laser | |
| CN101242076A (en) | A KTA crystal full solid Raman laser | |
| CN101202412B (en) | Solid laser | |
| CN101000997A (en) | Nd:LuVO4 laser with wave of 916 nm | |
| CN101159364A (en) | LD terminal pump Nd:YAG/SrWO4/KTP yellow light laser | |
| CN111262120A (en) | Based on mix Nd3+Method for generating 1.8-micron waveband pulse laser of ceramic optical fiber | |
| CN101304152A (en) | Coupled resonator self-Raman multiple frequency complete solid yellow light laser | |
| CN101159362A (en) | LD terminal pump yellow light laser | |
| CN102299469A (en) | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic | |
| CN105140775A (en) | 1.2 micron wavelength all-solid-state Raman laser | |
| CN101159363A (en) | LD terminal pump Nd:YVO4/KTP yellow light laser | |
| CN104901157A (en) | High-power side-pumping 1525nm (human-eye safe waveband) automatic self-raman laser | |
| CN201234056Y (en) | Folding cavity self-raman frequency doubling completely solid yellow laser | |
| CN201234057Y (en) | Self-Raman multiple frequency complete solid yellow light laser | |
| CN201234055Y (en) | Coupling cavity type Raman frequency doubling completely solid yellow light laser | |
| CN201149951Y (en) | Solid yellow light laser | |
| Shen et al. | Efficient and compact intracavity-frequency-doubled Nd: GdVO4/KTP laser end-pumped by a fiber-coupled laser diode | |
| CN100438232C (en) | Quasi-continuous high power red, green double-wavelength laser with LD side pumping |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |