CN2247813Y - Direct bonded silicon integrated micro-vibration gyro - Google Patents
Direct bonded silicon integrated micro-vibration gyro Download PDFInfo
- Publication number
- CN2247813Y CN2247813Y CN 95239083 CN95239083U CN2247813Y CN 2247813 Y CN2247813 Y CN 2247813Y CN 95239083 CN95239083 CN 95239083 CN 95239083 U CN95239083 U CN 95239083U CN 2247813 Y CN2247813 Y CN 2247813Y
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- silicon
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- glass electrode
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Abstract
The utility model relates to a direct linkage silicon integrated micro-vibration top which is a semiconductor inertial sensor for the precise measurement of angular rate. The utility model is composed of a silicon slice with an integrated double-frame structure and a glass electrode, wherein the silicon slice and the glass electrode are connected in a mode of direct electrostatic linkage, and the silicon integrated double-frame structure adopts anisotropy to form a concave-convex structure in a mode of corrosion. A gap between the silicon integrated double-frame structure and the glass electrode can be decided according to actual demand, and the gap is generally from 1 to 10 mu m. Because the control accuracy of the gap is high, the gap can be reduced, and the sensitivity is enhanced. The utility model has the characteristics of simple technology, low cost, small size, high efficiency, etc. The utility model can be used in various occasions for angular rate measurement.
Description
The utility model is a kind of integrated little oscillation gyro of silicon that is used for angular rate measurement, belongs to semiconductor inertial sensor technical field.
The integrated little oscillation gyro of existing silicon adopts the micromechanical gyro of integrated pair of framed structure of silicon usually, and its adopts positioning fixture that the silicon chip and the glass electrode of two framed structures are formed by connecting with epoxy resin.Because the gap that epoxy resin connects is big, gap precision control difficulty, thereby sensitivity is low, technology difficulty is big.
The purpose of this utility model is at the deficiencies in the prior art, provides a kind of highly sensitive silicon integrated little oscillation gyro, and its technology can be fit to large-scale production.
The utility model can be made up of the silicon chip and the glass electrode of integrated pair of framed structure, is connected for Direct Bonding between the silicon chip that is characterized in integrated pair of framed structure and the glass electrode.Integrated pair of framed structure of silicon adopts anisotropic etch to become the concave-convex structure, helps controlling the gap a between integrated pair of framed structure of silicon and the glass electrode, and its numerical value determines according to actual needs, general a=1～10 μ m.Adopt direct electrostatic bonding between silicon chip and the glass.The utility model passes through to measure the capacitance variations between integrated pair of framed structure of silicon and the glass electrode, thereby measures the size of the angular speed of input.
The utility model compared with prior art has characteristics such as highly sensitive, the suitable large-scale production of technology.Owing to adopt silicon chip to be connected with the glass Direct Bonding, the gap is by prior corrosion control, thereby the gap precision height of control, and it can make the gap dwindle greatly, has improved sensitivity.The utility model can be used for various angular rate measurement occasions, and has that cost is low, volume is little, the efficient advantages of higher.
Fig. 1 is the structural representation of the integrated little oscillation gyro of prior art silicon; Fig. 2 is the diagrammatic cross-section of Fig. 1; Fig. 3 is a structural representation of the present utility model; Fig. 4 is the diagrammatic cross-section of Fig. 3.
The utility model can adopt scheme shown in the drawings to realize: the substrate among Fig. 1 and Fig. 2 (1) is a glass, adopt epoxy resin (3) bonding connection between the two framed structures (2) of it and silicon, epoxy resin layer thickness a is exactly the gap between two framed structures (2) of silicon and the substrate (1), (4) be capacitor plate, (5) are flexible shaft.The utility model can adopt the scheme of Fig. 3 and Fig. 4, substrate (6) can adopt glass, and the two available following schemes of framed structure (8) of silicon are made, and select N type silicon chip for use, through oxidation, photoetching, erode away gap (a ' data can regulate according to actual needs), carry out oxidation, photoetching again after removing oxide layer, carve two framework regions, carry out boron diffusion then, make flexible shaft (7) again by lithography, boron diffusion is then removed oxide layer again and is promptly formed integrated pair of framed structure of silicon (8).Integrated pair of framed structure of silicon (8) constituted with directly carry out electrostatic bonding after sputter gold and the glass substrate (5) that makes electrode by lithography are aimed at directly be connected, remove other zones in addition, boron diffusion district with the way of corrosion at last, promptly constitute the integrated little oscillation gyro of Direct Bonding silicon.(9) are capacitance electrode among the figure.
Claims (3)
1, a kind of integrated little oscillation gyro of silicon that is used for angular rate measurement is made up of the silicon chip and the glass electrode of integrated pair of framed structure, is connected for Direct Bonding between the silicon chip that it is characterized in that integrated pair of framed structure and the glass electrode.
2, the integrated little oscillation gyro of silicon according to claim 1 is characterized in that integrated pair of framed structure of silicon adopts anisotropic etch to become the concave-convex structure.
3, the integrated little oscillation gyro of silicon according to claim 1 and 2 is characterized in that the gap between integrated pair of framed structure of silicon and the glass electrode is 1～10 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95239083 CN2247813Y (en) | 1995-01-23 | 1995-01-23 | Direct bonded silicon integrated micro-vibration gyro |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95239083 CN2247813Y (en) | 1995-01-23 | 1995-01-23 | Direct bonded silicon integrated micro-vibration gyro |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2247813Y true CN2247813Y (en) | 1997-02-19 |
Family
ID=33880950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95239083 Expired - Fee Related CN2247813Y (en) | 1995-01-23 | 1995-01-23 | Direct bonded silicon integrated micro-vibration gyro |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2247813Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100374820C (en) * | 2001-08-10 | 2008-03-12 | 波音公司 | Isolated resonator gyroscope |
| CN102662074A (en) * | 2012-06-06 | 2012-09-12 | 重庆邮电大学 | Framework type vibration angular rate sensor and measurement system using swinging mass block |
-
1995
- 1995-01-23 CN CN 95239083 patent/CN2247813Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100374820C (en) * | 2001-08-10 | 2008-03-12 | 波音公司 | Isolated resonator gyroscope |
| CN102662074A (en) * | 2012-06-06 | 2012-09-12 | 重庆邮电大学 | Framework type vibration angular rate sensor and measurement system using swinging mass block |
| CN102662074B (en) * | 2012-06-06 | 2014-02-19 | 重庆邮电大学 | Framework type vibration angular rate sensor and measurement system using swinging mass block |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |