CN221177521U - Electronic power device capable of changing topology - Google Patents
Electronic power device capable of changing topology Download PDFInfo
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- CN221177521U CN221177521U CN202322647687.5U CN202322647687U CN221177521U CN 221177521 U CN221177521 U CN 221177521U CN 202322647687 U CN202322647687 U CN 202322647687U CN 221177521 U CN221177521 U CN 221177521U
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
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Abstract
The present application provides an electronic power device capable of topology change, comprising: a device topology board 1 and a switching topology board 2; one or more half-bridge integrated units 3 are arranged on the device topological board 1, and one or more parallel direct current port units 4 and one or more parallel alternating current port units 5 are arranged on the switching topological board 2; the half-bridge integrated unit 3 is respectively connected with the corresponding direct current port unit 4 and the corresponding alternating current port unit 5 through wires; the half-bridge integrated unit 3 performs topology structure transformation according to requirements; the device topological board 1 can topology the half-bridge integrated units 3 as required, and the half-bridge integrated units 3 on the device topological board 1 can be connected in parallel through the switching topological board 2, so that the switching topological board 2 improves the consistency of the parallel half-bridge integrated units 3, balances the current of the electronic power device, and reduces the problem of off-voltage overshoot of the electronic power device.
Description
Technical Field
The utility model belongs to the field of power semiconductors, and particularly relates to an electronic power device capable of changing topology.
Background
Since the 80 s of the 20 th century, various power electronics devices have been increasingly used in industry with the rapid development of power electronics technology. As demand increases, power electronics tend to have high capacity, high power density, and voltage and current levels of switching devices increase. Taking the insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT) of the switching device widely used at present as an example, the high-power IGBT module of 1700-6500V and 2000-3600A is widely used. Along with the maturity of silicon carbide material technology, silicon carbide MOSFET also gradually popularizes and applies in fields such as electric automobile, photovoltaic power generation gradually, and the silicon carbide device that matures at present is mainly still single tube device.
The IGBT has a faster switching speed, and the on and off time reaches microsecond level, and the silicon carbide device has a faster switching speed, and the on and off time reaches ten nanosecond level. However, due to the presence of the line stray inductance, the device will generate a very high current rise rate during switching, which will lead to a very high voltage spike during switching, which voltage spike may damage the switching device, while increasing switching losses and electromagnetic interference noise.
In order to suppress the voltage spikes of the switching tube, it is necessary to reduce the line stray inductance as much as possible, and to employ a snubber circuit of appropriate structural parameters to suppress and absorb the overvoltage. However, even if the structural design of the component is compact enough, the capacitor and the power semiconductor device are large in size, and the capacitor terminals are far away from the two ends of the device, the large parasitic inductance still cannot be avoided, so that the device still has large overvoltage when being turned off, and the threat is caused to the application of the device.
In addition, in order to improve the current capacity of the device, the device is usually realized by directly connecting the chips in parallel, but the current imbalance is unavoidable when the chips are connected in parallel due to the dispersion of the chip parameters and the dispersion of the parasitic parameters of the loop, and the current utilization rate of the device is lower and the device must be derated for use due to the remarkable effect when the chips are connected in parallel in a larger scale.
Disclosure of utility model
In order to overcome the above-mentioned shortcomings of the prior art, the present application proposes an electronic power device capable of performing topology change, comprising: a device topology board 1 and a switching topology board 2;
One or more half-bridge integrated units 3 are arranged on the device topological board 1, and one or more parallel direct current port units 4 and one or more parallel alternating current port units 5 are arranged on the switching topological board 2;
The half-bridge integrated unit 3 is respectively connected with the corresponding direct current port unit 4 and the corresponding alternating current port unit 5 through wires;
The half-bridge integrated unit 3 performs topology structure transformation according to requirements; the direct current port unit 4 and the alternating current port unit 5 of the switching topological board 2 are correspondingly arranged according to the half-bridge integrated unit 3.
Further, the topology of the half-bridge integrated unit 3 includes: a half-bridge topology 31, a full-bridge sub-topology 32, and a three-level topology 33.
Further, the dc port unit 4 includes: a direct current positive port 5 and a direct current negative port 7; the ac port unit 5 includes: an alternating current port 13 and a current equalizing inductor 14;
The current equalizing inductor 14 is connected in series with the alternating current port 13.
Further, the half-bridge topology 31 includes: a half-bridge subunit;
The direct current positive end of the half-bridge subunit is connected with the direct current positive port 6 in the corresponding direct current port unit 4 through a wire, and the direct current negative end of the half-bridge subunit is connected with the direct current negative port 7 in the corresponding direct current port unit 4 through a wire;
The ac terminals of the half-bridge subunits are connected to ac ports 13 of the corresponding ac port units 5 by wires.
Further, the full bridge type topology 32 includes: the plurality of half-bridge subunits are connected in parallel;
The direct current positive end of each half-bridge subunit is connected with the direct current positive port 6 in the corresponding direct current port unit 4 after being summarized, and the direct current negative end of each half-bridge subunit is connected with the direct current negative port 7 in the corresponding direct current port unit 4 after being summarized;
The two alternating current ends of each half-bridge subunit are connected with the alternating current ends of other half-bridge subunits through wires, and then are connected with the alternating current ports of the corresponding alternating current port units 5 through wires.
Further, the three-level topology 33 includes: three half-bridge subunits;
The direct current negative end of the first half-bridge subunit is connected with the direct current positive end of the second half-bridge subunit;
The direct current positive end of the third half-bridge subunit is connected with the alternating current end of the first half-bridge subunit, and the direct current negative end of the third half-bridge subunit is connected with the alternating current end of the second half-bridge subunit;
The direct current positive end of the first half-bridge subunit is connected with the direct current positive port 6 in the corresponding direct current port unit 4, and the direct current negative end of the second half-bridge subunit is connected with the direct current negative port 7 in the corresponding direct current port unit 4;
The ac terminal of the third half-bridge subunit is connected to the ac port of the corresponding ac port unit 5.
Further, the half-bridge subunit includes: an independent upper half-bridge device 8 and an independent lower half-bridge device 9;
One end of the upper half-bridge device 8 is a direct current positive end, and the other end of the upper half-bridge device 8 is an alternating current end;
One end of the lower half-bridge device 9 is a direct current negative end, and the other end of the lower half-bridge device 9 is an alternating current end.
Further, the upper half-bridge device 8 includes: a single chip or a plurality of single chips connected in parallel;
One end of one single chip or a plurality of single chips connected in parallel in the upper half-bridge device is a direct current positive end, and the other end of the one single chip or the plurality of single chips connected in parallel is an alternating current end;
The lower half-bridge device includes: a single chip or a plurality of single chips connected in parallel;
The other end of one single chip or a plurality of single chips connected in parallel in the lower half-bridge device is a direct current negative end, and the other end of one single chip or a plurality of single chips connected in parallel is an alternating current end.
Further, the single chip includes: an IGBT chip 10 and a diode chip 11 connected in parallel;
The positive electrode of the diode chip 11 in the upper half-bridge device is an alternating current end, and the negative electrode of the diode chip 11 in the upper half-bridge device is a direct current positive end;
The positive electrode of the diode chip 11 in the lower half-bridge device is a direct current negative terminal, and the negative electrode of the diode chip 11 in the upper half-bridge device is an alternating current terminal.
Further, the dc port unit 4 further includes: a capacitor 12;
One end of the capacitor 12 is connected with the direct current positive port 6, and the other end of the capacitor 12 is connected with the direct current negative port 7.
Compared with the closest prior art, the utility model has the following beneficial effects:
The present application provides an electronic power device capable of topology change, comprising: a device topology board 1 and a switching topology board 2; one or more half-bridge integrated units 3 are arranged on the device topological board 1, and one or more parallel direct current port units 4 and one or more parallel alternating current port units 5 are arranged on the switching topological board 2; the half-bridge integrated unit 3 is respectively connected with the corresponding direct current port unit 4 and the corresponding alternating current port unit 5 through wires; the half-bridge integrated unit 3 performs topology structure transformation according to requirements; the direct current port unit 4 and the alternating current port unit 5 of the switching topological board are correspondingly arranged according to the half-bridge integrated unit 3; the device topological board 1 can topology the half-bridge integrated units 3 as required, and the half-bridge integrated units 3 on the device topological board 1 can be connected in parallel through the switching topological board 2, so that the switching topological board 2 improves the consistency of the parallel half-bridge integrated units 3, balances the current of the electronic power device, and reduces the problem of off-voltage overshoot of the electronic power device.
Drawings
FIG. 1 is a schematic diagram of an electronic power device with a topology that can be changed according to the present utility model;
FIG. 2 is a schematic diagram of a DC port unit of an electronic power device with a variable topology according to the present utility model;
FIG. 3 is a schematic diagram of an AC port unit of an electronic power device with a variable topology according to the present utility model;
FIG. 4 is a schematic diagram of a half-bridge topology of an electronic power device with a variable topology according to the present disclosure;
FIG. 5 is a schematic diagram of a half-bridge subunit of an electronic power device with a variable topology according to the present disclosure;
FIG. 6 is a schematic diagram of a full bridge topology of an electronic power device with a variable topology according to the present disclosure;
FIG. 7 is a schematic diagram of an electronic power device with an H-bridge structure for an electronic power device with a variable topology according to the present utility model;
FIG. 8 is a schematic diagram of an electronic power device with a three-phase bridge structure for an electronic power device with a variable topology according to the present utility model;
FIG. 9 is a schematic diagram of a three-level topology of an electronic power device with a variable topology according to the present disclosure;
FIG. 10 is a schematic diagram of a single chip of an electronic power device with a topology that can be changed according to the present utility model;
FIG. 11 is a schematic diagram of an internal combination of an electronic power device according to the present disclosure;
FIG. 12 is a schematic diagram of an electronic power device with capacitors and current sharing inductors removed;
wherein, 1 is a device topological plate, 2 is a switching topological plate, 3 is a half-bridge integrated unit, 4 is a direct current port unit, 5 is an alternating current port unit, 6 is a direct current positive port, 7 is a direct current negative port, 8 is an upper half-bridge device, 9 is a lower half-bridge device, 10 is an IGBT chip, 11 is a diode chip, 12 is a capacitor, 13 is an alternating current port, 14 is a current equalizing inductance, 31 is a half-bridge type topological structure, 32 is a full-bridge type topological structure, and 33 is a three-level type topological structure.
Detailed Description
The following describes the embodiments of the present application in further detail with reference to the drawings.
Example 1:
An electronic power device capable of performing topology change according to the present utility model is shown in fig. 1, and includes: a device topology board 1 and a switching topology board 2;
One or more half-bridge integrated units 3 are arranged on the device topological board 1, and one or more parallel direct current port units 4 and one or more parallel alternating current port units 5 are arranged on the switching topological board 2; the half-bridge integrated unit 3 is respectively connected with the corresponding direct current port unit 4 and the corresponding alternating current port unit 5 through wires; the half-bridge integrated unit 3 performs topology structure transformation according to requirements; the direct current port unit 4 and the alternating current port unit 5 of the switching topological board 2 are correspondingly arranged according to the half-bridge integrated unit 3;
the topology of the half-bridge integrated unit 3 includes: a half-bridge topology 31, a full-bridge sub-topology 32, and a three-level topology 33.
As shown in fig. 2, the dc port unit 4 includes: a direct current positive port 5 and a direct current negative port 7; the dc port unit 4 further includes: a capacitor 12; one end of the capacitor 12 is connected with the direct current positive port 6, and the other end of the capacitor 12 is connected with the direct current negative port 7;
As shown in fig. 3, the ac port unit 5 includes: an alternating current port 13 and a current equalizing inductor 14; the current equalizing inductor 14 is connected in series with the ac port 13.
As shown in fig. 4, the half-bridge topology 31 includes: a half-bridge subunit as shown in fig. 5;
the direct current positive end of the half-bridge subunit is connected with the direct current positive port 6 in the corresponding direct current port unit 4 through an external copper bar and a lead, and the direct current negative end of the half-bridge subunit is connected with the direct current negative port 7 in the corresponding direct current port unit 4 through an external copper bar and a lead; the ac end of the half-bridge subunit is connected to the ac port 13 of the corresponding ac port unit 5 by an external copper bar and wire.
As shown in fig. 6, the full bridge type topology 32 includes: the plurality of half-bridge subunits are connected in parallel;
The direct current positive end of each half-bridge subunit is connected with the direct current positive port 6 in the corresponding direct current port unit 4 after being summarized, and the direct current negative end of each half-bridge subunit is connected with the direct current negative port 7 in the corresponding direct current port unit 4 after being summarized;
The two alternating current ends of each half-bridge subunit are connected with the alternating current ends of other half-bridge subunits through wires, and then are connected with the alternating current ports of the corresponding alternating current port units 5 through wires.
When the full-bridge sub-topology 32 is formed by connecting two half-bridge sub-units in parallel and only two full-bridge sub-topologies 32 are needed on the half-bridge integrated unit 3, the electronic power device with an H-bridge structure is formed after the device topology board 1 and the switching topology board 2 are connected as shown in fig. 7;
When the full-bridge sub-topology 32 is formed by connecting two half-bridge sub-units in parallel and only 3 full-bridge sub-topologies 32 are needed on the half-bridge integrated unit 3, the electronic power device with a three-phase bridge structure is formed after the device topology board 1 and the switching topology board 2 are connected as shown in fig. 8;
as shown in fig. 9, the three-level topology 33 includes: three half-bridge subunits;
the direct current negative end of the first half-bridge subunit is connected with the direct current positive end of the second half-bridge subunit; the direct current positive ends of the three half-bridge subunits are connected with the alternating current end of the first half-bridge subunit, and the direct current negative end of the third half-bridge subunit is connected with the alternating current end of the second half-bridge subunit; the direct current positive end of the first half-bridge subunit is connected with the direct current positive port 6 in the corresponding direct current port unit 4, and the direct current negative end of the second half-bridge subunit is connected with the direct current negative port 7 in the corresponding direct current port unit 4; the ac terminal of the third half-bridge subunit is connected to the ac port of the corresponding ac port unit 5.
The half-bridge subunit includes: an independent upper half-bridge device 8 and an independent lower half-bridge device 9; one end of the upper half-bridge device 8 is a direct current positive end, and the other end of the upper half-bridge device 8 is an alternating current end; one end of the lower half-bridge device 9 is a direct current negative end, and the other end of the lower half-bridge device 9 is an alternating current end.
The upper half bridge device 8 includes: a single chip or a plurality of single chips connected in parallel; one end of a single chip or a plurality of single chips connected in parallel in the upper half-bridge device is a direct current positive end, and the other end of the single chip or the plurality of single chips connected in parallel is an alternating current end; the lower half-bridge device includes: a single chip or a plurality of single chips connected in parallel; the other end of one single chip or a plurality of single chips connected in parallel in the lower half-bridge device is a direct current negative end, and the other end of one single chip or a plurality of single chips connected in parallel is an alternating current end.
As shown in fig. 10, the single chip includes: an IGBT chip 10 and a diode chip 11 connected in parallel; the positive electrode of the diode chip 11 in the upper half-bridge device is an alternating current end, and the negative electrode of the diode chip 11 in the upper half-bridge device is a direct current positive end; the positive electrode of the diode chip 11 in the lower half-bridge device is a direct current negative terminal, and the negative electrode of the diode chip 11 in the upper half-bridge device is an alternating current terminal; as shown in fig. 11, the device topology board 1 and the switching topology board 2 are combined to form an electronic power device, and the switching topology board 2 can also remove a capacitor and a current sharing inductance, and as shown in fig. 12, the electronic power device with the capacitor and the current sharing inductance removed; according to the device topological board 1, the half-bridge integrated unit 3 can be topological into three structures of a half-bridge topological structure 31, a full-bridge type topological structure 32 and a three-level topological structure according to requirements, the half-bridge integrated unit 3 on the device topological board 1 can be connected in parallel through the switching topological board 2, the uniformity of the parallel half-bridge integrated unit 3 is improved through the current equalizing inductor 14 in the switching topological board 2, the current of a half-bridge device is balanced, the problem of the turn-off voltage overshoot of the half-bridge device is reduced, and the capacitor is connected in the direct-current port unit 4, so that the turn-off voltage overshoot of an electronic power device can be reduced.
It should be noted that the foregoing embodiments are merely for illustrating the technical solution of the present application and not for limiting the scope of protection of the present application, and although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that various changes, modifications or equivalents may be made to the specific embodiments of the application after reading the present application, and these changes, modifications or equivalents are within the scope of protection of the claims appended hereto.
Claims (10)
1. An electronic power device capable of varying topology, comprising: a device topological board (1) and a switching topological board (2);
One or more half-bridge integrated units (3) are arranged on the device topological board (1), and one or more parallel direct current port units (4) and one or more parallel alternating current port units (5) are arranged on the switching topological board (2);
The half-bridge integrated unit (3) is respectively connected with the corresponding direct current port unit (4) and the corresponding alternating current port unit (5) through wires;
The half-bridge integrated unit (3) performs topological structure transformation according to requirements; the direct current port unit (4) and the alternating current port unit (5) of the switching topological board (2) are correspondingly arranged according to the half-bridge integrated unit (3).
2. Electronic power device according to claim 1, characterized in that the topology of the half-bridge integrated unit (3) comprises: a half-bridge topology (31), a full-bridge sub-topology (32) and a three-level topology (33).
3. The electronic power device according to claim 1, wherein the dc port unit (4) comprises: a direct current positive port (6) and a direct current negative port (7);
The ac port unit (5) includes: an alternating current port (13) and a current equalizing inductor (14);
the current equalizing inductor (14) is connected with the alternating current port (13) in series.
4. An electronic power device according to claim 2, characterized in that the half-bridge topology (31) comprises: a half-bridge subunit;
The direct current positive end of the half-bridge subunit is connected with a direct current positive port (6) in the corresponding direct current port unit (4) through a wire, and the direct current negative end of the half-bridge subunit is connected with a direct current negative port (7) in the corresponding direct current port unit (4) through a wire;
The alternating current end of the half-bridge subunit is connected with an alternating current port (13) of the corresponding alternating current port unit (5) through a wire.
5. The electronic power device of claim 2, wherein the full bridge type topology (32) comprises: the plurality of half-bridge subunits are connected in parallel;
The direct current positive end of each half-bridge subunit is connected with a direct current positive port (6) in the corresponding direct current port unit (4) after being summarized, and the direct current negative end of each half-bridge subunit is connected with a direct current negative port (7) in the corresponding direct current port unit (4) after being summarized;
The two alternating current ends of each half-bridge subunit are connected with the alternating current ends of other half-bridge subunits through wires, and then are connected with the alternating current ports of the corresponding alternating current port units (5) through wires.
6. The electronic power device according to claim 2, characterized in that the three-level topology (33) comprises: three half-bridge subunits;
The direct current negative end of the first half-bridge subunit is connected with the direct current positive end of the second half-bridge subunit;
The direct current positive end of the third half-bridge subunit is connected with the alternating current end of the first half-bridge subunit, and the direct current negative end of the third half-bridge subunit is connected with the alternating current end of the second half-bridge subunit;
The direct current positive end of the first half-bridge subunit is connected with a direct current positive port (6) in the corresponding direct current port unit (4), and the direct current negative end of the second half-bridge subunit is connected with a direct current negative port (7) in the corresponding direct current port unit (4);
The alternating current end of the third half-bridge subunit is connected with an alternating current port of the corresponding alternating current port unit (5).
7. The electronic power device of claim 4, wherein the half-bridge subunit comprises: an independent upper half-bridge device (8) and an independent lower half-bridge device (9);
one end of the upper half-bridge device (8) is a direct current positive end, and the other end of the upper half-bridge device (8) is an alternating current end;
one end of the lower half-bridge device (9) is a direct current negative end, and the other end of the lower half-bridge device (9) is an alternating current end.
8. The electronic power device according to claim 7, characterized in that the upper half-bridge device (8) comprises: a single chip or a plurality of single chips connected in parallel;
One end of one single chip or a plurality of single chips connected in parallel in the upper half-bridge device is a direct current positive end, and the other end of the one single chip or the plurality of single chips connected in parallel is an alternating current end;
The lower half-bridge device includes: a single chip or a plurality of single chips connected in parallel;
The other end of one single chip or a plurality of single chips connected in parallel in the lower half-bridge device is a direct current negative end, and the other end of one single chip or a plurality of single chips connected in parallel is an alternating current end.
9. The electronic power device of claim 8, wherein the single chip comprises: an IGBT chip (10) and a diode chip (11) which are connected in parallel;
The positive electrode of the diode chip (11) in the upper half-bridge device is an alternating current end, and the negative electrode of the diode chip (11) in the upper half-bridge device is a direct current positive end;
the positive electrode of the diode chip (11) in the lower half-bridge device is a direct current negative electrode, and the negative electrode of the diode chip (11) in the upper half-bridge device is an alternating current end.
10. An electronic power device according to claim 3, characterized in that the dc port unit (4) further comprises: a capacitor (12);
One end of the capacitor (12) is connected with the direct current positive port (6), and the other end of the capacitor (12) is connected with the direct current negative port (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202322647687.5U CN221177521U (en) | 2023-09-28 | 2023-09-28 | Electronic power device capable of changing topology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322647687.5U CN221177521U (en) | 2023-09-28 | 2023-09-28 | Electronic power device capable of changing topology |
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| CN221177521U true CN221177521U (en) | 2024-06-18 |
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| CN202322647687.5U Active CN221177521U (en) | 2023-09-28 | 2023-09-28 | Electronic power device capable of changing topology |
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