CN221141953U - Heating structure for liquid phase method silicon carbide single crystal growth furnace - Google Patents
Heating structure for liquid phase method silicon carbide single crystal growth furnace Download PDFInfo
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- CN221141953U CN221141953U CN202323235898.4U CN202323235898U CN221141953U CN 221141953 U CN221141953 U CN 221141953U CN 202323235898 U CN202323235898 U CN 202323235898U CN 221141953 U CN221141953 U CN 221141953U
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 345
- 239000013078 crystal Substances 0.000 title claims abstract description 89
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000007791 liquid phase Substances 0.000 title claims abstract description 33
- 238000004321 preservation Methods 0.000 claims abstract description 6
- 238000009434 installation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 abstract description 46
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000005192 partition Methods 0.000 abstract 2
- 238000005253 cladding Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 17
- 238000003860 storage Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000306 component Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
The utility model provides a heating structure for a liquid phase method silicon carbide single crystal growth furnace, which is used for solving the problem that the heating structure of the traditional silicon carbide single crystal growth furnace cannot form a thermal field with adjustable temperature distribution in the vertical direction in the inner furnace. The single crystal growth furnace comprises a furnace body, a heat preservation cylinder embedded in the furnace body, and an inner furnace arranged in the middle part of the inner cavity of the furnace body; the heating structure comprises a base type heating device arranged at the bottom of the inner furnace and a sleeve type heating device sleeved at the periphery of the inner furnace. The heating structure realizes the cladding type partition heating and independent and accurate temperature control of the partition of the inner furnace, ensures the uniform and stable temperature distribution of the inner cavity of the inner furnace, provides good thermal field conditions for the growth of silicon carbide single crystal, and improves the stability and the repeatability of the growth of the silicon carbide single crystal. The heating structure not only realizes the adjustment of the temperature distribution in the vertical direction in the inner furnace, but also improves the heating efficiency and the heating quality, and reduces the heating energy consumption and the heating cost.
Description
Technical Field
The utility model relates to the technical fields of material science and semiconductor manufacturing, in particular to a heating structure for a liquid phase method silicon carbide single crystal growth furnace.
Background
The liquid phase method silicon carbide single crystal growth furnace generally comprises an inner furnace, a seed crystal support, a heating structure, a temperature measurement and control system, a liquid phase circulation system, a vacuum pump system and a gas supply system. Wherein, the inner furnace is used for providing molten silicon carbide raw materials for the growth of liquid phase silicon carbide single crystal; the seed crystal support is used for placing and clamping silicon carbide seed crystals and performing rotary stretching movement in the inner cavity of the inner furnace to realize the growth of silicon carbide single crystal crystals so as to form a silicon carbide single crystal bar; the heating structure is used for providing heat energy to form a stable thermal field in the inner cavity of the inner furnace and control the growth of silicon carbide single crystal; the temperature measurement and control system is used for realizing temperature measurement and control in the single crystal growth process.
The heating structure is one of the core components of the liquid phase method silicon carbide single crystal growth furnace, and the design and the performance of the heating structure directly influence the quality and the efficiency of single crystal growth. The conventional heating structure generally comprises two independent heating devices, namely a main heating device and an auxiliary heating device, wherein the auxiliary heating device is sleeved at the lower part of the main heating device. The main heating device consists of a plurality of vertical U-shaped main heating rods, and each main heating rod is electrically connected with the main electrode busbar. The auxiliary heating device consists of a plurality of ring-shaped auxiliary heating rods, and each auxiliary heating rod is electrically connected with the auxiliary electrode busbar. The main heating device heats the upper part of the inner furnace, the auxiliary heating device heats the lower part of the inner furnace, and the main heating device and the auxiliary heating device can respectively control the heating power of the main heating device and the auxiliary heating device, thereby forming a synthetic thermal field with adjustable radial and axial temperature gradients in the inner cavity of the inner furnace and meeting the requirement of silicon carbide single crystal growth.
However, the inventors found that in the process of implementing the technical solution in the embodiments of the present utility model, the heating structure of the existing silicon carbide single crystal growth furnace has at least the following technical problems:
A thermal field with adjustable temperature distribution in the vertical direction cannot be formed in the inner furnace. This may cause temperature unevenness in the growth process of the silicon carbide single crystal, affecting the crystallization quality and growth rate of the silicon carbide single crystal.
Disclosure of utility model
In view of the above, an object of the embodiments of the present utility model is to provide a heating structure for a liquid phase method silicon carbide single crystal growth furnace, which is used for solving the technical problems that the existing heating structure of the silicon carbide single crystal growth furnace cannot form a thermal field with adjustable temperature distribution in the vertical direction in the inner furnace, and the growth quality and efficiency of the silicon carbide single crystal are affected.
In order to achieve the above object, the technical scheme adopted in the embodiment of the present utility model is as follows:
the embodiment of the utility model provides a heating structure for a liquid phase method silicon carbide single crystal growth furnace, which comprises a furnace body, a heat preservation cylinder embedded in the furnace body, and an inner furnace arranged in the middle part of the inner cavity of the furnace body; the heating structure includes:
A base type heating device; the base type heating device is arranged at the bottom of the inner cavity of the furnace body below the inner furnace; the upper part of a base matrix of the base type heating device is provided with an inner furnace installation cavity, and the lower part of the base matrix is provided with a bottom heating cavity; the inner furnace is embedded in the inner furnace cavity through the inner furnace mounting cavity, and a first circumferential resistance heating wire group is arranged in the base body of the side wall of the inner furnace mounting cavity and used for heating the inner furnace from the outer periphery of the bottom of the inner furnace; a bottom resistance heating wire is arranged in the bottom heating cavity through a sealing bottom plate and is used for heating the inner furnace from the bottom of the inner furnace;
A sleeve-type heating device; the sleeve type heating device is sleeved on the periphery of the inner furnace and fixedly connected with the base body; an annular chamber is arranged on the wall body of the sleeve base body of the sleeve type heating device, and a second circumferential resistance heating wire group with a columnar frame structure is arranged in the annular chamber and used for heating the inner furnace from the periphery of the inner furnace; the plurality of annular resistance heating wires of the second circumferential resistance heating wire group are uniformly distributed and arranged at intervals along the vertical direction of the columnar frame structure.
Optionally, the second circumferential resistance heating wire group of the columnar frame structure includes a plurality of vertical support rods, and a plurality of annular resistance heating wires are arranged at intervals along the vertical direction through a plurality of vertical support rods.
Optionally, the annular resistance heating wire of the second circumferential resistance heating wire set is a vortex-shaped resistance heating wire.
Optionally, the annular resistance heating wire of the first circumferential resistance heating wire group is a vortex-shaped resistance heating wire.
Optionally, the bottom resistance heating wire is a spiral resistance heating wire.
Optionally, the upper part of the base body is provided with an annular slot, and the sleeve type heating device is sleeved on the periphery of the inner furnace through the annular slot.
Optionally, the lower part of the sleeve base body is provided with an annular boss, and the sleeve base body is inserted into the annular slot of the base body through the annular boss.
Based on the technical scheme, the heating structure for the liquid phase method silicon carbide single crystal growth furnace in the embodiment of the utility model heats the inner furnace from the bottom of the inner furnace through the bottom resistance heating wire of the base type heating device, and provides a basic thermal field for a molten silicon carbide raw material storage area of the inner furnace; forming a thermal field with adjustable temperature distribution in the vertical direction in a molten silicon carbide raw material storage area of the inner furnace through a first circumferential resistance heating wire group of the base type heating device; and a second circumferential resistance heating wire group of the cylindrical frame structure of the sleeve type heating device forms a thermal field with adjustable temperature distribution in the vertical direction in a seed crystal support rotation stretching area of the inner furnace, and the second circumferential resistance heating wire group and the seed crystal support rotation stretching area are matched with each other to form a thermal field with adjustable temperature distribution in the vertical direction in the inner cavity of the whole inner furnace. That is, the base type heating device and the sleeve type heating device are matched with each other to cooperatively work, so that the temperature distribution of different height areas of the inner cavity of the whole inner furnace is controlled, a thermal field with adjustable temperature distribution in the vertical direction is formed in the inner cavity of the whole inner furnace, and furthermore, the temperature field of the inner cavity of the inner furnace can be adjusted according to different stages and requirements of the growth of the silicon carbide single crystal, so that the temperature field is suitable for the growth condition of the silicon carbide single crystal, and the crystallization quality and the growth speed of the silicon carbide single crystal are improved.
Compared with the heating structure of the existing silicon carbide single crystal growth furnace, the heating structure for the liquid phase method silicon carbide single crystal growth furnace provided by the embodiment of the utility model realizes multi-level regional heating and regional independent temperature control of the inner cavity of the inner furnace, forms a thermal field with adjustable temperature distribution in the vertical direction in the inner cavity of the whole inner furnace, provides a proper thermal field for different stages of silicon carbide single crystal growth, and improves the crystallization quality and growth speed of the silicon carbide single crystal. In addition, the heating structure greatly improves the heating efficiency and the heating quality, and correspondingly reduces the energy consumption and the cost of heating.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present utility model, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic perspective view showing a liquid phase method silicon carbide single crystal growth furnace in an embodiment of the present utility model;
FIG. 2 is a schematic exploded view showing a liquid phase method silicon carbide single crystal growth furnace having a heating structure in an embodiment of the present utility model;
FIG. 3 is a schematic internal structural view showing a liquid phase method silicon carbide single crystal growth furnace having a heating structure in an embodiment of the present utility model;
FIG. 4 shows a schematic cross-sectional view of a liquid phase process silicon carbide single crystal growth furnace with a heating structure in an embodiment of the utility model;
fig. 5 shows a schematic structural diagram of a second circumferential resistance heating wire group in a heating structure in an embodiment of the utility model.
Wherein, the correspondence between the reference numerals and the component names in the figures is as follows:
Furnace body 100, heat preservation cylinder 200, inner furnace 300, base formula heating device 400, base 410, first circumference resistance heating wire group 420, bottom resistance heating wire 430, sealing bottom plate 440, annular slot 450, sleeve formula heating device 500, sleeve base 510, annular chamber 511, second circumference resistance heating wire group 520, vertical bracing piece 521.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the drawings of the embodiments of the present utility model in conjunction with practical applications, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The heating structure for the liquid phase method silicon carbide single crystal growth furnace can be widely applied to the fields of high-power semiconductor devices, photovoltaic industry, new energy automobiles, graphene industry, LED industry and the like to produce high-quality silicon carbide crystal bars. Of course, the thermal field structure of the embodiments of the present utility model may also be used to grow other single crystal crystals similar to silicon carbide single crystal crystals.
The heating structure of the existing silicon carbide single crystal growth furnace can not form a thermal field with adjustable temperature distribution in the vertical direction in the inner furnace, and the technical problem of influencing the growth quality and efficiency of the silicon carbide single crystal is solved.
The inventor finds in the study that the heating structure of the existing silicon carbide single crystal growth furnace cannot form a thermal field with adjustable temperature distribution in the vertical direction in the inner cavity of the inner furnace, but the main heating device cannot form the temperature distribution in the vertical direction in the inner cavity of the inner furnace, and the true reason is that the main heating device consisting of a plurality of vertical U-shaped main heating rods is attached to the outer side of the inner furnace, each vertical U-shaped main heating rod heats the inner furnace from top to bottom, the temperature distribution in the vertical direction is formed in the inner cavity of the inner furnace, but the temperature distribution of different height areas of the inner furnace cannot be controlled by adjusting the output power of the U-shaped main heating rods.
In the implementation of the technical scheme in the embodiment of the utility model, if a plurality of heating elements of the heating device arranged on the outer periphery side of the inner furnace are arranged on the outer periphery side of the inner furnace at intervals from top to bottom in a circumferential arrangement manner, the inner periphery of the inner furnace in the vertical direction is heated in a zoned manner by each heating element arranged in the circumferential direction, the adjustment of the output power of the heating elements can be realized by adjusting the input current of some heating elements, and the adjustment of the temperature distribution in the vertical direction of the inner cavity of the inner furnace can be realized.
The inventor has found through intensive research that the heating uniformity of the outer periphery of the bottom of the inner furnace is very important for forming molten silicon carbide raw materials with uniform components at the bottom of the inner furnace cavity, and the uniformity of a thermal field at the bottom of the inner furnace cavity cannot be ensured by simply heating the inner furnace from the bottom of the inner furnace.
Based on the above knowledge, the inventors provide a heating structure for a liquid phase method silicon carbide single crystal growth furnace.
Fig. 1 is a schematic perspective view showing a liquid phase method silicon carbide single crystal growth furnace in an embodiment of the present utility model.
Referring now to fig. 1, a heating structure in an embodiment of the present utility model is applied to a liquid phase method silicon carbide single crystal growth furnace, the single crystal growth furnace includes a furnace body 100, a heat preservation cylinder 200 embedded in the furnace body 100, and an inner furnace 300 arranged in the middle part of the inner cavity of the furnace body; the furnace body 100 is used as a main body frame of the whole single crystal growth furnace and is used for installing other functional components of the single crystal growth furnace; the heat preservation cylinder 200 is embedded in the furnace body 100 and is integrated with the furnace body 100, so that heat in the inner cavity of the furnace body is prevented from being dissipated to the outside of the furnace body 100, and the stability of the temperature distribution of the inner cavity of the furnace body is maintained; the inner furnace 300 is arranged in the middle part of the inner cavity of the furnace body and is used for storing solid or liquid silicon-containing raw materials and growing silicon carbide single crystal.
FIG. 2 is a schematic exploded view showing a liquid phase method silicon carbide single crystal growth furnace having a heating structure in an embodiment of the present utility model;
FIG. 3 is a schematic internal structural view showing a liquid phase method silicon carbide single crystal growth furnace having a heating structure in an embodiment of the present utility model;
FIG. 4 shows a schematic cross-sectional view of a liquid phase process silicon carbide single crystal growth furnace with a heating structure in an embodiment of the utility model;
fig. 5 shows a schematic structural diagram of a second circumferential resistance heating wire group in a heating structure in an embodiment of the utility model.
Referring now to fig. 2, and referring to fig. 3, 4, and 5, in combination, a heating structure for a liquid phase method silicon carbide single crystal growth furnace is provided in an embodiment of the present utility model, where the single crystal growth furnace includes a furnace body 100, a heat insulation cylinder 200 embedded in the furnace body 100, and an inner furnace 300 disposed in the middle of the inner cavity of the furnace body; the heating structure includes:
A base type heating device 400; the base type heating device 400 is arranged at the bottom of the inner cavity of the furnace body below the inner furnace 300; the upper part of the base substrate 410 of the base heating device 400 is provided with an inner furnace installation cavity, and the lower part is provided with a bottom heating cavity; the inner furnace 300 is embedded in the furnace body inner cavity through the inner furnace installation cavity, and a first circumferential resistance heating wire group 420 is arranged in the base matrix 410 of the side wall of the inner furnace installation cavity and used for heating the inner furnace 300 from the outer periphery of the bottom of the inner furnace 300; a bottom resistance heating wire 430 is provided in the bottom heating chamber through a sealing bottom plate 440 for heating the inner furnace 300 from the bottom of the inner furnace 300;
Sleeve-type heating device 500; the sleeve-type heating device 500 is sleeved on the periphery of the inner furnace 300 and is fixedly connected with the base substrate 410; an annular chamber 511 is arranged on the wall body of the sleeve base body 510 of the sleeve type heating device 500, and a second circumferential resistance heating wire group 520 with a columnar frame structure is arranged in the annular chamber 511 and is used for heating the inner furnace 300 from the periphery of the inner furnace 300; the plurality of annular resistance heating wires of the second circumferential resistance heating wire group 520 are uniformly distributed and arranged at intervals along the vertical direction of the columnar frame structure.
According to the embodiment of the utility model, the technical function of realizing the vertical temperature gradient distribution control of the inner cavity of the inner furnace is gradually decomposed into the vertical temperature gradient distribution control of the molten silicon carbide raw material storage area of the inner furnace 300, and the vertical temperature gradient distribution control of the seed crystal support rotation stretching area of the inner furnace 300 is realized.
Wherein the silicon carbide raw material storage area in a molten state of the inner furnace 300 is heated by the pedestal type heating device 400 provided at the bottom of the inner furnace 300. The bottom resistance heating wire 430 of the base heating apparatus 400 heats the inner furnace 300 from the bottom of the inner furnace 300, a basic thermal field is formed in a molten silicon carbide raw material storage area of the inner furnace 300, the first circumferential resistance heating wire group 420 of the base heating apparatus 400 heats the inner furnace 300 from different height areas of the bottom periphery of the inner furnace 300, and a vertical temperature gradient distribution is formed in the molten silicon carbide raw material storage area of the inner furnace 300. The heating power of the annular resistive heating wire of the first circumferential resistive heating wire group 420 corresponding to a height area at the bottom of the inner furnace 300 can be changed by adjusting the input current of the annular resistive heating wire, so as to realize accurate control of the temperature distribution of the height area. That is, precise control of the vertical temperature gradient distribution of the molten silicon carbide raw material storage region of the inner furnace 300 is achieved.
The seed crystal support rotation stretching region of the inner furnace 300 is heated by the sleeve type heating device 500 which is sleeved on the outer circumference of the inner furnace 300. The plurality of annular resistance heating wires of the second circumferential resistance heating wire group 520 of the cylindrical frame structure of the sleeve-type heating apparatus 500 heat the inner furnace 300 from different height regions of the outer peripheral surface above the bottom of the inner furnace 300, and form a vertical temperature gradient distribution in the rotation stretching region of the seed crystal support of the inner furnace 300. The heating power of the annular resistance heating wire of the second circumferential resistance heating wire set 520 corresponding to a height region of the seed crystal support rotation stretching region of the inner furnace 300 can be changed by adjusting the input current of the annular resistance heating wire, so as to realize accurate control of the temperature distribution of the height region.
That is, the first circumferential resistance heating wire group 420 of the base type heating device 400 forms a thermal field with adjustable temperature distribution in the vertical direction in the molten silicon carbide raw material storage area of the inner furnace 300, the second circumferential resistance heating wire group 520 of the cylindrical frame structure of the sleeve type heating device 500 forms a thermal field with adjustable temperature distribution in the vertical direction in the seed crystal support rotation stretching area of the inner furnace 300, and the two thermal fields cooperate with each other to form a thermal field with adjustable temperature distribution in the vertical direction in the whole inner furnace cavity.
In the embodiment of the present utility model, the pedestal type heating apparatus 400 is disposed under the inner furnace 300, supports and fixes the inner furnace 300, and is in close contact with the inner furnace 300. The pedestal type heating apparatus 400 is used for heating the inner furnace 300 from the bottom of the inner furnace 300 to form a basic thermal field in the inner furnace cavity, and is used for heating a molten silicon carbide raw material storage area of the inner furnace 300 from the periphery of the bottom of the inner furnace 300 to form a vertical temperature gradient distribution in the area.
Specifically, the base substrate 410 of the base heating device 400 is made of a high temperature resistant insulating material such as ceramic, and has a certain thickness and strength, so as to withstand the weight of the inner furnace 300 and the thermal stress during the heating process.
The base substrate 410 has an inner furnace installation cavity in an upper portion and a bottom heating cavity in a lower portion. The shape and size of the inner furnace installation cavity are matched with the shape of the inner furnace 300, and the inner furnace 300 can be directly embedded in a clearance fit manner for supporting installation. The first circumferential resistance heating wire group 420 is arranged in the base substrate 410 of the side wall of the inner furnace installation cavity, the first circumferential resistance heating wire group 420 is formed by a plurality of annular resistance heating wires in an annular distribution mode, is arranged in the base substrate 410 of the side wall of the inner furnace installation cavity in a spaced arrangement mode, is electrically connected with a power supply and a controller, and is used for heating the inner furnace 300 from the outer periphery of the bottom of the inner furnace 300, and the vertical direction temperature gradient distribution is formed in the molten silicon carbide raw material storage area of the inner furnace 300. The controller can adjust the input current of the annular resistance heating wires of the first circumferential resistance heating wire group 420 corresponding to a height area at the bottom of the inner furnace 300 to change the heating power, so as to realize accurate control of the temperature distribution in the height area. The bottom heating chamber is provided therein with a bottom resistance heating wire 430 through a sealing bottom plate 440. For heating the inner furnace 300 from the bottom of the inner furnace 300, a basic thermal field is formed in the inner furnace 300, which changes the solid silicon carbide feedstock into a molten silicon carbide feedstock. The bottom resistance heating wire 430 is composed of one or more resistance heating wires, and the shape of the resistance heating wires can be specifically annular or a plurality of U-shaped head-tail connections. The bottom resistance heating wire 430 is electrically connected with a power supply and a controller, and can adjust input current and voltage according to the need by the controller, so as to control the heating power of the bottom resistance heating wire 430 and realize the adjustment of the thermal field generated by the bottom resistance heating wire 430. The sealing bottom plate 440 is made of a high-temperature resistant insulating structural material, and is used for fixedly supporting the bottom resistance heating wire 430, preventing heat dissipation and ensuring the heating efficiency of the bottom resistance heating wire 430.
In this embodiment of the present utility model, the sleeve-type heating device 500 is sleeved on the outer periphery of the inner furnace 300, and is fixedly connected with the base substrate 410, so as to heat the seed crystal support rotation stretching region of the inner furnace 300 from the outer periphery of the inner furnace 300, so as to form a temperature gradient distribution in the vertical direction in the region.
Specifically, the sleeve base 510 of the sleeve-type heating device 500 is made of a high-temperature-resistant insulating material, such as ceramic, and has a certain thickness and strength. The external shape and the size of the furnace are adapted to the external shape of the inner furnace 300, and the furnace can be sleeved on the periphery of the inner furnace 300. The sleeve base 510 is provided with an annular chamber 511 for arranging a second circumferential resistance heating wire set 520 with a columnar frame structure, so that the second circumferential resistance heating wire set 520 is tightly attached to the outer surface of the inner furnace 300, and heating efficiency and uniformity are improved. The second circumferential resistance heating wire set 520 is composed of a plurality of annular resistance heating wires, which are uniformly distributed and arranged at intervals along the vertical direction of the columnar frame structure, and the plurality of annular resistance heating wires are electrically connected with a power supply and a controller, and are used for heating the inner furnace 300 from the periphery above the bottom of the inner furnace 300, and the seed crystal support rotation stretching area of the inner furnace cavity forms vertical direction temperature gradient distribution. The controller can adjust the input current of an annular resistance heating wire of the second circumferential resistance heating wire set 520 corresponding to a height region above the bottom of the inner furnace 300 to change the heating power thereof, so as to realize accurate control of the temperature distribution of the height region.
It can be seen that, based on the above technical scheme, in the heating structure for a liquid phase method silicon carbide single crystal growth furnace according to the embodiment of the present utility model, the bottom resistance heating wire 430 of the base type heating device 400 disposed at the bottom of the inner furnace 300 heats the inner furnace 300 from the bottom of the inner furnace 300, and a basic thermal field is formed in the molten silicon carbide raw material storage area of the inner furnace 300; the inner furnace 300 is heated from different height areas of the bottom periphery of the inner furnace 300 by the first circumferential resistance heating wire group 420 of the base type heating apparatus 400, and a vertical temperature gradient distribution is formed in the molten silicon carbide raw material storage area of the inner furnace 300. The heating power of the annular resistance heating wire of the first circumferential resistance heating wire group 420 corresponding to a height area at the bottom of the inner furnace 300 can be changed by adjusting the input current of the annular resistance heating wire, so that the temperature distribution of the height area in the silicon carbide raw material storage area can be accurately controlled. The inner furnace 300 is heated from different height regions of the outer peripheral surface above the bottom of the inner furnace 300 by a plurality of annular resistance heating wires of the second circumferential resistance heating wire group 520 of the cylindrical frame structure of the sleeve-type heating device 500 which is sleeved on the outer periphery of the inner furnace 300, and a vertical temperature gradient distribution is formed in the seed crystal support rotation stretching region of the inner furnace 300. The heating power of the annular resistance heating wire of the second circumferential resistance heating wire set 520 corresponding to a height region of the rotation stretching region of the seed crystal holder of the inner furnace 300 can be changed by adjusting the input current thereof, so as to realize accurate control of the temperature distribution of the height region of the rotation stretching region of the seed crystal holder. That is, the first circumferential resistance heating wire group 420 of the base type heating device 400 forms a thermal field with adjustable temperature distribution in the vertical direction in the molten silicon carbide raw material storage area of the inner furnace 300, the second circumferential resistance heating wire group 520 of the cylindrical frame structure of the sleeve type heating device 500 forms a thermal field with adjustable temperature distribution in the vertical direction in the seed crystal support rotation stretching area of the inner furnace 300, and the two thermal fields cooperate with each other to form a thermal field with adjustable temperature distribution in the vertical direction in the whole inner furnace cavity. Furthermore, the temperature field of the inner cavity of the inner furnace can be regulated according to different stages and requirements of the growth of the silicon carbide single crystal so as to adapt to the growth conditions of the silicon carbide single crystal, thereby improving the crystallization quality and the growth speed of the silicon carbide single crystal.
Compared with the heating structure of the existing silicon carbide single crystal growth furnace, the heating structure for the liquid phase method silicon carbide single crystal growth furnace provided by the embodiment of the utility model realizes multi-level regional heating and regional independent temperature control of the inner cavity of the inner furnace, forms a thermal field with adjustable temperature distribution in the vertical direction in the inner cavity of the whole inner furnace, provides a proper thermal field for different stages of silicon carbide single crystal growth, and improves the crystallization quality and growth speed of the silicon carbide single crystal. In addition, the heating structure greatly improves the heating efficiency and the heating quality, and correspondingly reduces the energy consumption and the cost of heating. Thereby solving the technical problems existing in the prior art.
In order to improve structural stability and heating uniformity of the second circumferential resistance heating wire set 520, optionally, the second circumferential resistance heating wire set 520 of the columnar frame structure includes a plurality of vertical support rods 521, and a plurality of annular resistance heating wires are disposed along a vertical direction at intervals by a plurality of the vertical support rods 521.
Specifically, a plurality of the vertical support bars 521 are formed by a mold forming or machining process using a high temperature resistant insulating structural material such as ceramic. For example, the second circumferential resistance heating wire set 520 for making the columnar frame structure may specifically be that a ring-shaped fixing structure is respectively sleeved at the upper ends and the lower ends of the plurality of vertical support rods 521 to form a columnar frame support structure, a plurality of annular resistance heating wires are wound on the outer ring of the columnar frame support structure, the plurality of annular resistance heating wires are uniformly distributed on the outer ring of the columnar frame support structure, a certain gap is left between two adjacent annular resistance heating wires, and a specific interval may be set according to heating requirements, thereby making the second circumferential resistance heating wire set 520 for making the columnar frame structure. The second circumferential resistance heating wire set 520 for manufacturing the columnar frame structure may further include distributing a plurality of vertical support rods 521 at intervals, winding a plurality of annular resistance heating wires around the outer circumferences of the plurality of vertical support rods 521, and leaving a certain gap between two adjacent annular resistance heating wires, where the specific gap may be set according to a heating requirement, so as to manufacture the second circumferential resistance heating wire set 520 for manufacturing the columnar frame structure. Each annular resistance heating wire of the second circumferential resistance heating wire set 520 of the columnar frame structure is connected with a power supply and a controller to form an annular heating loop. The current and the voltage of each annular resistance heating wire can be controlled by the controller, so that the heating power and the temperature of each heating loop can be adjusted, and the uniformity and the stability of heating the inner cavity of the inner furnace from the periphery of the inner furnace 300 are ensured.
In order to improve the heating efficiency and the heating adjustability of the second circumferential resistance heating wire set 520, the annular resistance heating wires of the second circumferential resistance heating wire set 520 are optionally eddy current resistance heating wires.
Specifically, the annular resistance heating wire has a spirally-curled vortex-like structure. Compared with a vertical heating wire, the resistance heating wire with the vortex-shaped structure can increase the effective heating length of unit volume, and the heating quantity is improved on the premise of ensuring the current flux, so that the heating efficiency is improved, and meanwhile, the effective heating length is long, so that the heating adjustable sensitivity can be increased. The eddy-type resistance heating wires are adopted to manufacture the second circumferential resistance heating wire group 520, so that the heating performance and the heating adjustability of the second circumferential resistance heating wire group 520 can be effectively improved, and the forming efficiency and the adjustability of the temperature distribution of the inner cavity of the inner furnace in the vertical direction are improved.
In order to improve the heating efficiency and the heating adjustability of the first circumferential resistance heating wire set 420, optionally, the resistance heating wires of the first circumferential resistance heating wire set 420 are eddy current resistance heating wires.
Specifically, the annular resistance heating wire has a spirally-curled vortex-like structure. Compared with a vertical heating wire, the resistance heating wire with the vortex-shaped structure can increase the effective heating length of unit volume, and the heating quantity is improved on the premise of ensuring the current flux, so that the heating efficiency is improved, and meanwhile, the effective heating length is long, so that the heating adjustable sensitivity can be increased. The eddy-type resistance heating wires are adopted to manufacture the first circumferential resistance heating wire group 420, so that the heating performance and the heating adjustability of the first circumferential resistance heating wire group 420 can be effectively improved, and further the forming efficiency and the adjustability of the temperature distribution of the inner cavity of the inner furnace in the vertical direction are improved.
In order to improve the heating efficiency and the service life of the bottom resistance heating wire 430, the bottom resistance heating wire 430 is optionally a spiral resistance heating wire.
Specifically, a spiral resistance heating wire is selected as the bottom resistance heating wire 430, and the effective heating length per unit volume is much longer than that of a linear heating wire, so that the heating value is improved on the premise of ensuring the current flux, and the heating efficiency is improved. In addition, the spiral resistance heating wire has good mechanical strength and shock resistance, so that the bottom resistance heating wire 430 has a long service life.
In order to effectively sleeve the sleeve 500 around the outer circumference of the inner burner 300 and align with the base 400, the upper portion of the base body 410 may optionally have an annular slot 450, and the sleeve 500 is sleeved around the outer circumference of the inner burner 300 through the annular slot 450.
Specifically, an annular slot is formed in the upper portion of the base body 410, and the position and size of the annular slot 450 are matched with those of the external shape of the inner furnace 300. The sleeve-type heating apparatus 500 is closely fitted around the outer circumference of the inner furnace 300 by the ring-shaped socket 450 so that the sleeve-type heating apparatus 500 is not displaced or deformed by heating or cooling. In addition, the sleeve-type heating device 500 may be aligned with the base-type heating device 400, so that the heating uniformity and stability of the inner furnace 300 may be ensured.
In order to improve the reliability and efficiency of the fixed connection between the sleeve-type heating device 500 and the base-type heating device 400, optionally, the lower portion of the sleeve base 510 has an annular boss, through which the sleeve base 510 is inserted into the annular slot 450 of the base 410.
Specifically, the lower portion of the sleeve body 510 has an annular boss with a size matching the size of the annular slot 450 of the base body 410. The annular boss of the sleeve body 510 is inserted into the annular slot 450 of the base body 410, and the annular boss and the slot are precisely aligned by a limit structure and are firmly connected by a bolt fixing manner, so that the sleeve heating device 500 and the base heating device 400 are accurately positioned and firmly fixed. The plugging and fixing mode not only facilitates the assembly and disassembly of the sleeve type heating device 500, but also improves the connection strength and stability of the sleeve type heating device and the sleeve type heating device, and is beneficial to ensuring the cooperative cooperation of the base type heating device 400 and the sleeve type heating device 500 so as to form a stable, uniform and adjustable thermal field in the inner cavity of the inner furnace.
Claims (7)
1. The heating structure for the liquid phase method silicon carbide single crystal growth furnace comprises a furnace body (100), a heat preservation cylinder (200) embedded in the furnace body (100), and an inner furnace (300) arranged in the middle of the inner cavity of the furnace body; the heating structure is characterized by comprising:
a base type heating device (400); the base type heating device (400) is arranged at the bottom of the inner cavity of the furnace body below the inner furnace (300); the upper part of a base substrate (410) of the base type heating device (400) is provided with an inner furnace installation cavity, and the lower part is provided with a bottom heating cavity; the inner furnace (300) is embedded in the furnace body inner cavity through the inner furnace mounting cavity, and a first circumferential resistance heating wire group (420) is arranged in the base matrix (410) of the side wall of the inner furnace mounting cavity and used for heating the inner furnace (300) from the outer periphery of the bottom of the inner furnace (300); a bottom resistance heating wire (430) is arranged in the bottom heating cavity through a sealing bottom plate (440) and is used for heating the inner furnace (300) from the bottom of the inner furnace (300);
A sleeve-type heating device (500); the sleeve type heating device (500) is sleeved on the periphery of the inner furnace (300) and is fixedly connected with the base substrate (410); an annular chamber (511) is arranged on the wall body of a sleeve base body (510) of the sleeve type heating device (500), and a second circumferential resistance heating wire group (520) with a columnar frame structure is arranged in the annular chamber (511) and is used for heating the inner furnace (300) from the periphery of the inner furnace (300); the plurality of annular resistance heating wires of the second circumferential resistance heating wire group (520) are uniformly distributed and arranged at intervals along the vertical direction of the columnar frame structure.
2. The heating structure for a liquid phase process silicon carbide single crystal growth furnace according to claim 1, wherein said second circumferential resistance heating wire group (520) of the columnar frame structure comprises a plurality of vertical support rods (521), a plurality of annular resistance heating wires arranged at intervals in the vertical direction by a plurality of said vertical support rods (521).
3. The heating structure for a liquid phase process silicon carbide single crystal growth furnace according to claim 1 or 2, wherein the annular resistance heating wires of the second circumferential resistance heating wire group (520) are eddy current resistance heating wires.
4. The heating structure for a liquid phase process silicon carbide single crystal growth furnace according to claim 1 or 2, wherein the annular resistance heating wires of the first circumferential resistance heating wire group (420) are eddy current resistance heating wires.
5. The heating structure for a liquid phase process silicon carbide single crystal growth furnace according to claim 1, wherein said bottom resistance heating wire (430) is a spiral resistance heating wire.
6. The heating structure for a liquid phase process silicon carbide single crystal growth furnace as claimed in any one of claims 1, 2, and 5, wherein the upper portion of the base substrate (410) has an annular slot (450), and the sleeve-type heating device (500) is fitted around the outer periphery of the inner furnace (300) through the annular slot (450).
7. The heating structure for a liquid phase process silicon carbide single crystal growth furnace as set forth in claim 6, wherein said sleeve base body (510) has an annular boss at a lower portion thereof, said sleeve base body (510) being inserted into said annular slot (450) of said base body (410) through said annular boss.
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| CN202323235898.4U CN221141953U (en) | 2023-11-28 | 2023-11-28 | Heating structure for liquid phase method silicon carbide single crystal growth furnace |
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