CN107059112B - Bottom heater of semiconductor grade silicon single crystal furnace - Google Patents
Bottom heater of semiconductor grade silicon single crystal furnace Download PDFInfo
- Publication number
- CN107059112B CN107059112B CN201710245426.7A CN201710245426A CN107059112B CN 107059112 B CN107059112 B CN 107059112B CN 201710245426 A CN201710245426 A CN 201710245426A CN 107059112 B CN107059112 B CN 107059112B
- Authority
- CN
- China
- Prior art keywords
- support column
- heating body
- annular plate
- shaped structure
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000013078 crystal Substances 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 24
- 239000010439 graphite Substances 0.000 claims abstract description 24
- 239000012212 insulator Substances 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 230000003139 buffering effect Effects 0.000 claims description 19
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 238000000462 isostatic pressing Methods 0.000 claims description 3
- 210000001503 joint Anatomy 0.000 claims description 3
- 238000000746 purification Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides a bottom heater for a semiconductor grade silicon single crystal furnace, which consists of a heating element, a support column, a connecting bolt, a support column insulator and a gasket, and is characterized in that: the heating body adopts a symmetrical annular plate-shaped structure, and a plurality of grooves and round holes are uniformly formed in the inner ring and the outer ring of the heating body; the support columns are assembled at mounting and positioning hole sites arranged at two ends of the heating body and are respectively and fixedly connected with the heating body through connecting bolts; gaskets are respectively arranged between the heating body and the support column and at the bottom of the support column; the support column insulator is assembled in the support column inner hole and is fixed by being meshed with the inner tightening spigot. The advantages are that: the heating area is increased, and the uniformity and stability of the temperature field are improved; the flexibility of the heater is increased, so that the deformation under the high heat load condition is resisted, and the service life of the heater is prolonged; the materials such as high-purity graphite, solidified carbon felt and the like are adopted, so that pollution in the furnace is reduced, and the crystal purity is obviously improved.
Description
Technical Field
The invention relates to a heater, in particular to a graphite heater at the bottom of a semiconductor grade silicon single crystal furnace, which is used for the silicon single crystal furnace and can meet the gradient temperature field conditions required by the growth of the semiconductor grade silicon single crystal.
Background
Monocrystalline silicon is a crystal with a basically complete lattice structure, is a good semiconductor material, has the purity of more than 99.9999999 percent, can be used for the production and deep processing manufacture of diode level, rectifying device level, circuit level and solar cell level monocrystalline products, has been widely applied to various fields, and plays an important role in military electronic equipment, and is in the following products, namely integrated circuits and semiconductor separation devicesNew materialLeading edge of development.
The semiconductor grade silicon single crystal furnace is an important crystal growth device in the single crystal silicon industry chain, and because the semiconductor grade silicon single crystal is slowly grown under the condition of high temperature, good temperature gradient control is required to form a cold center, and a uniform and stable temperature field is required to realize stable growth of the single crystal, the temperature gradient controllable foundation of the bottom heater is important. At present, a bottom heater of a silicon single crystal furnace mostly adopts a diamond structure, is simple in design, cannot form a uniform and stable temperature field, and is low in mechanical property and purity of materials, so that the production quality and efficiency of silicon single crystals are seriously affected. Therefore, the traditional heater at the bottom of the silicon single crystal furnace is only suitable for the growth of solar-grade silicon single crystals, and the crystals often generate a large amount of impurities due to the problems of turbulence of a thermal field, pollution and the like, so that the purity and the yield of the crystals are low, and the production efficiency of the high-purity silicon single crystals is seriously affected.
How to improve the purity of single crystal silicon and the production efficiency of single crystal silicon have been the subject of close attention in the art. Among the schemes, the scheme for improving the mechanical property and purity of the graphite material is not reported.
Disclosure of Invention
The invention aims at: aiming at a series of problems of uncontrollable temperature gradient, non-uniformity of a temperature field, low mechanical properties of materials, low purity and the like of a diamond bottom heater of the existing silicon single crystal furnace, low yield, low purity, low quality and the like of silicon single crystal growth, the novel reliable bottom heater for semiconductor-grade silicon single crystal growth is provided.
The purpose of the invention is realized in the following way: the bottom heater for the semiconductor-grade silicon single crystal furnace comprises a heating element, a support column, a connecting bolt, a support column insulator and a gasket, and is characterized in that:
a) The heating body is of an annular plate-shaped structure, the envelope lines of the inner ring and the outer edge of the annular plate-shaped structure are raised reinforcing ribs, two supporting points of the heating body are symmetrically arranged in mounting holes on the diameter of the annular plate-shaped structure, the annular plate-shaped structure is divided into symmetrical semi-rings, stress buffering grooves overlapped with the radius are formed in the two semi-rings, each stress buffering groove comprises a stress buffering groove which is formed by pointing an inner ring to the outer edge and a stress buffering groove which is formed by pointing an outer edge to the inner ring, the stress buffering grooves are uniformly distributed and alternately arranged, and stress round holes are formed at the tail ends of the stress buffering grooves which are formed by pointing the inner ring to the outer edge:
b) The support column corresponding to the support point is of a hollow cylindrical structure, two ends of the support column are respectively provided with internal threads, one end of the support column is connected with the mounting hole of the heating element through a bolt and a gasket, and the other end of the support column is in butt joint with the electrode through the bolt and the gasket;
c) The middle part of the inner hole of the support column is provided with a tightening spigot, the support column insulator is respectively assembled in the inner hole of the support column and positioned between the inner threads at the two ends, and the support column insulator is meshed and fixed by the inner tightening spigot.
In the present invention: and evenly distributed hoisting holes are arranged between the stress round holes arranged at the tail end of the stress buffer groove and the edge of the outer ring.
In the present invention: the outer edges of the semi-rings with symmetrical annular plate structures of the heating body respectively comprise two pipeline avoiding gaps which are symmetrically distributed on the semi-rings corresponding to the annular plate structures.
In the present invention: the outer wall of the support column is provided with a section of regular quadrangle or regular hexagon structure.
In the present invention: the heating body, the support column and the connecting bolt are all made of high-strength isostatic pressing graphite; the support column insulator adopts a solidified carbon felt; the gasket is made of graphite paper.
In the present invention: the graphite, the solidified carbon felt and the graphite paper are subjected to high-temperature purification treatment, wherein the purity of the graphite and the graphite paper is required to be 5 ppm, and the purity of the solidified carbon felt is required to be 20 ppm.
In the present invention: the working power supply of the heating element is direct current, and the anode and the cathode of the direct current power supply are respectively transmitted to the heating element through the support columns.
The invention has the advantages that: because the heating body adopts the annular plate-shaped structure, and especially, the outer edges of the semi-rings symmetrical to the annular plate-shaped structure of the heating body are respectively provided with two pipeline avoiding notches, compared with the traditional diamond-shaped bottom heater, the heating area is increased, the uniformity and the stability of a temperature field are improved, and the crystal yield is improved. Because the multi-channel stress buffer grooves are arranged between the inner ring and the outer ring of the heating body, the tail end of the stress buffer groove pointing to the outer edge from the inner ring is also provided with a stress round hole, the flexibility of the manual heating body is improved, the deformation under the condition of high heat load is resisted, and the service life of the heater is prolonged. Because the outer wall of the support column is provided with a section of regular quadrangle or regular hexagon structure, an impetus can be provided for the installation of the support column for the heating element. The hollow support column is provided with the support column insulator, so that the heat insulation effect can be effectively achieved. Because the heater, the support column insulator and the gasket are made of high-purity graphite, solidified carbon felt, graphite paper and other materials respectively, and the purity requirements of the graphite and the graphite paper are 5 ppm and 20 ppm, the pollution of free pollutants in the furnace to the crystal growth process can be greatly reduced, and the purity of the crystal finished product is greatly improved. Because the heating body is of an annular plate-shaped structure, the enveloping lines of the inner ring and the outer edge of the annular plate-shaped structure are raised reinforcing ribs, the rigidity of the heating body can be improved, and meanwhile, evenly distributed hoisting holes are formed between the stress round holes arranged at the tail ends of the stress buffering grooves and the edge of the outer ring, so that the installation is facilitated, and the heating body can be prevented from deforming due to uneven stress in the installation process. Because the bolt between the heating body and the support column is provided with the gasket, current ignition is prevented from being caused at the connection position when the electric power is supplied, and meanwhile, the gasket is also arranged at the bottom of the support column, so that the electric power is prevented from being supplied when the electric power is supplied to the electrode.
Drawings
Fig. 1 is a schematic view of the basic structure of an embodiment of the present invention. A structural schematic diagram of the middle heating element;
FIG. 2 is a plan view of the heat generating body according to the present invention.
Fig. 3 is a schematic perspective view of fig. 1.
In the figure: 1. the heating element, 2, the support column, 3, lower gasket, 4, go up the gasket, 5, the support column insulator, 6, the bolt, 7, the strengthening rib, 8, the mounting hole, 9, the stress buffer tank, 10, the stress round hole, 11, the lifting hole, 12, pipeline avoid the breach, 13, regular hexagon.
Detailed Description
The drawings disclose, without limitation, the specific construction of an embodiment in accordance with the present invention, and the invention is further described below in connection with the accompanying drawings.
As can be seen from fig. 1 to 3, the invention comprises a heating element 1, a support column 2, a bolt 6, a support column insulator 6, an upper gasket 4 and a lower gasket 3, wherein:
the heating body 1 is of an annular plate-shaped structure, the envelope lines of the inner ring and the outer edge of the annular plate-shaped structure are raised reinforcing ribs 7, two supporting points of the heating body 1 are symmetrically arranged in mounting holes 8 on the diameter of the annular plate-shaped structure, the annular plate-shaped structure is divided into symmetrical semi-rings, stress buffering grooves 9 overlapped with the radius are arranged in the two semi-rings, the stress buffering grooves 9 comprise stress buffering grooves pointing to the outer edge from the inner ring and stress buffering grooves pointing to the inner ring from the outer edge, the stress buffering grooves are uniformly distributed and alternately arranged, and stress round holes 10 are arranged at the tail ends of the stress buffering grooves pointing to the outer edge from the inner ring:
the support column 2 corresponding to the support point is of a hollow cylindrical structure, two ends of the support column are respectively provided with internal threads, one end of the support column is connected with the mounting hole 8 of the heating body 1 through the bolt 6 and the upper gasket 4, and the other end of the support column is in butt joint with the electrode through the bolt and the lower gasket 3.
The middle part of the inner hole of the support column 2 is provided with tightening rabbets, the support column heat insulators 5 are respectively assembled in the inner hole of the support column 2 and positioned between the inner threads at the two ends, and the support column heat insulators 5 are meshed and fixed by the inner tightening rabbets.
In this embodiment: and evenly distributed hoisting holes 11 are arranged between the stress round holes 10 arranged at the tail end of the stress buffer groove 9 and the edge of the outer ring.
In this embodiment: the outer edges of the semi-rings with symmetrical annular plate structures of the heating body respectively comprise two pipeline avoiding notches 12 which are symmetrically distributed on the semi-rings corresponding to the annular plate structures.
In this embodiment: the outer wall of the support column 1 is provided with a section of regular quadrangle or regular hexagon 13.
In the concrete implementation, the heating element 1, the support column 2 and the bolt 6 are all made of high-strength isostatic pressing graphite; the support column insulator 5 adopts a solidified carbon felt; the upper gasket 4 and the lower gasket 3 are made of graphite paper. The high-strength isostatic graphite, the solidified carbon felt and the graphite paper are subjected to high-temperature purification treatment, wherein the purity of the high-strength isostatic graphite and the purity of the graphite paper are required to be 5 ppm, and the purity of the solidified carbon felt is required to be 20 ppm.
In operation: the working power supply of the heating element 1 is direct current, and the anode and the cathode of the direct current power supply are respectively transmitted to the heating element 1 through the support columns 2.
Claims (2)
1. The utility model provides a semiconductor level silicon single crystal furnace bottom heater, includes heat-generating body, support column, connecting bolt, support column insulator, gasket group become, its characterized in that:
the heating body is of an annular plate-shaped structure, the envelope lines of the inner ring and the outer edge of the annular plate-shaped structure are raised reinforcing ribs, two supporting points of the heating body are symmetrically arranged in mounting holes on the diameter of the annular plate-shaped structure, the annular plate-shaped structure is divided into symmetrical semi-rings, stress buffering grooves overlapped with the radius are formed in the two semi-rings, each stress buffering groove comprises a stress buffering groove which is formed by pointing an inner ring to the outer edge and a stress buffering groove which is formed by pointing an outer edge to the inner ring, the stress buffering grooves are uniformly distributed and alternately arranged, and stress round holes are formed at the tail ends of the stress buffering grooves which are formed by pointing the inner ring to the outer edge:
lifting holes which are uniformly distributed are arranged between the stress round holes arranged at the tail end of the stress buffer groove and the edge of the outer ring;
the support column corresponding to the support point is of a hollow cylindrical structure, two ends of the support column are respectively provided with internal threads, one end of the support column is connected with the mounting hole of the heating element through a bolt and a gasket, and the other end of the support column is in butt joint with the electrode through the bolt and the gasket;
the middle part of the inner hole of the support column is provided with a tightening spigot, the support column insulator is respectively assembled in the inner hole of the support column and positioned between the inner threads at the two ends, and the support column insulator is meshed and fixed by the inner tightening spigot;
the outer edges of the semi-rings of the annular plate-shaped structure of the heating body are respectively provided with two pipeline avoiding gaps which are symmetrically distributed on the semi-rings corresponding to the annular plate-shaped structure; the working power supply of the heating element is direct current, and the anode and the cathode of the direct current power supply are respectively transmitted to the heating element through the support columns;
the outer wall of the support column is provided with a section of regular quadrilateral or regular hexagon structure;
the heating body, the support column and the connecting bolt are all made of high-strength isostatic pressing graphite; the support column insulator adopts a solidified carbon felt; the gasket is made of graphite paper.
2. The semiconductor grade silicon single crystal furnace bottom heater of claim 1, wherein: the graphite, the solidified carbon felt and the graphite paper are subjected to high-temperature purification treatment, wherein the purity of the graphite and the graphite paper is required to be 5 ppm, and the purity of the solidified carbon felt is required to be 20 ppm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710245426.7A CN107059112B (en) | 2017-04-14 | 2017-04-14 | Bottom heater of semiconductor grade silicon single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710245426.7A CN107059112B (en) | 2017-04-14 | 2017-04-14 | Bottom heater of semiconductor grade silicon single crystal furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107059112A CN107059112A (en) | 2017-08-18 |
| CN107059112B true CN107059112B (en) | 2023-12-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710245426.7A Active CN107059112B (en) | 2017-04-14 | 2017-04-14 | Bottom heater of semiconductor grade silicon single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107059112B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107904656A (en) * | 2017-11-30 | 2018-04-13 | 南京晶升能源设备有限公司 | A kind of sapphire single-crystal furnace bottom heater and single crystal growing furnace |
| CN111996587A (en) * | 2020-07-13 | 2020-11-27 | 大同新成新材料股份有限公司 | Graphite crucible seat for semiconductor-grade silicon single crystal furnace |
| CN112626621B (en) * | 2020-12-15 | 2022-04-12 | 南京晶能半导体科技有限公司 | Thermal field applied in transverse superconducting magnetic field and crystal growth method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013097943A (en) * | 2011-10-31 | 2013-05-20 | Momentive Performance Materials Inc | Heater and method of manufacturing the same |
| JP2014062004A (en) * | 2012-09-20 | 2014-04-10 | Ibiden Co Ltd | Graphite heater |
| JP2014099313A (en) * | 2012-11-14 | 2014-05-29 | Bridgestone Corp | Heater unit |
| CN204752899U (en) * | 2015-06-26 | 2015-11-11 | 湖南南方搏云新材料有限责任公司 | Single crystal growing furnace base heating ware |
| CN204913365U (en) * | 2015-08-25 | 2015-12-30 | 江苏友奥电器有限公司 | Frock of ring heater |
| CN105379415A (en) * | 2013-07-15 | 2016-03-02 | 莫门蒂夫性能材料股份有限公司 | Coated graphite heater configuration |
| JP6014237B1 (en) * | 2015-12-25 | 2016-10-25 | 並木精密宝石株式会社 | Sapphire single crystal member manufacturing equipment |
| CN206635456U (en) * | 2017-04-14 | 2017-11-14 | 南京晶能半导体科技有限公司 | Semiconductor grade monocrystal stove bottom heater |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134088A (en) * | 2005-11-08 | 2007-05-31 | Shin Etsu Chem Co Ltd | Ceramic heater and manufacturing method of ceramic heater |
-
2017
- 2017-04-14 CN CN201710245426.7A patent/CN107059112B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013097943A (en) * | 2011-10-31 | 2013-05-20 | Momentive Performance Materials Inc | Heater and method of manufacturing the same |
| JP2014062004A (en) * | 2012-09-20 | 2014-04-10 | Ibiden Co Ltd | Graphite heater |
| JP2014099313A (en) * | 2012-11-14 | 2014-05-29 | Bridgestone Corp | Heater unit |
| CN105379415A (en) * | 2013-07-15 | 2016-03-02 | 莫门蒂夫性能材料股份有限公司 | Coated graphite heater configuration |
| CN204752899U (en) * | 2015-06-26 | 2015-11-11 | 湖南南方搏云新材料有限责任公司 | Single crystal growing furnace base heating ware |
| CN204913365U (en) * | 2015-08-25 | 2015-12-30 | 江苏友奥电器有限公司 | Frock of ring heater |
| JP6014237B1 (en) * | 2015-12-25 | 2016-10-25 | 並木精密宝石株式会社 | Sapphire single crystal member manufacturing equipment |
| CN206635456U (en) * | 2017-04-14 | 2017-11-14 | 南京晶能半导体科技有限公司 | Semiconductor grade monocrystal stove bottom heater |
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| Publication number | Publication date |
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| CN107059112A (en) | 2017-08-18 |
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