CN220872333U - Optical structure resistant to plasma erosion - Google Patents
Optical structure resistant to plasma erosion Download PDFInfo
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- CN220872333U CN220872333U CN202320177828.9U CN202320177828U CN220872333U CN 220872333 U CN220872333 U CN 220872333U CN 202320177828 U CN202320177828 U CN 202320177828U CN 220872333 U CN220872333 U CN 220872333U
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- optical film
- plasma
- optical
- resistant
- plasma erosion
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- 230000003287 optical effect Effects 0.000 title claims abstract description 75
- 230000003628 erosive effect Effects 0.000 title claims abstract description 67
- 239000012788 optical film Substances 0.000 claims abstract description 155
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 47
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical group F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/03—Cuvette constructions
- G01N21/09—Cuvette constructions adapted to resist hostile environments or corrosive or abrasive materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
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- Optics & Photonics (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The optical structure resistant to plasma erosion comprises a light-transmitting substrate and a plasma-resistant optical film layer, wherein the plasma-resistant optical film layer is arranged on one surface of the light-transmitting substrate. In addition, the plasma resistant optical film layer comprises at least one first optical film and at least one second optical film, and the second optical film is overlapped on the first optical film. Wherein the density of the first optical film is not less than 4.5. The optical structure resistant to plasma attack has a better resistance to plasma attack.
Description
Technical Field
The present utility model relates to an optical structure, and more particularly, to an optical structure resistant to plasma erosion.
Background
The plasma deposition process or etching process monitors the emission lines generated by the plasma by a spectrum analyzer (Optical Emission Spectrometer, OES) to control the gas flow and deposition of the film. The Charge-Coupled Device (CCD) of the spectrum analyzer is sampled through a quartz glass observation window. However, quartz glass is not well resistant to plasma attack and its surface is susceptible to plasma bombardment leading to dust fall.
Therefore, it is worth thinking by those skilled in the art how to design an observation window with erosion resistance.
Disclosure of utility model
The present utility model is directed to a plasma erosion resistant optical structure having improved resistance to plasma erosion.
The optical structure resistant to plasma erosion comprises a light-transmitting substrate and a plasma-resistant optical film layer, wherein the plasma-resistant optical film layer is arranged on one surface of the light-transmitting substrate. In addition, the plasma resistant optical film layer comprises at least one first optical film and at least one second optical film, and the second optical film is overlapped on the first optical film. Wherein the density of the first optical film is not less than 4.5.
In the above-mentioned optical structure resistant to plasma erosion, the film of the outermost layer of the plasma-resistant optical film layer is the first optical film.
In the above-mentioned optical structure resistant to plasma erosion, when at least one of the first optical film and the second optical film is plural, the first optical film and the second optical film are stacked alternately.
In the above-mentioned optical structure resistant to plasma erosion, the plasma-resistant optical film layer further includes at least one third optical film, and when at least one of the third optical film or the second optical film is plural, the third optical film and the second optical film are overlapped with each other in a staggered manner.
In the above-mentioned optical structure resistant to plasma erosion, the plasma-resistant optical film layer faces the inside of a vacuum chamber.
In the above-described optical structure resistant to plasma erosion, the first optical film is selected from yttrium trifluoride (YF 3), erbium oxide (Er 2O 3), gadolinium oxide (Gd 2O 3), yttrium oxide (Y2O 3), yttrium Oxyfluoride (YOF), yttrium aluminum garnet (YAG, Y3Al5O 12), yac (Y4 Al2O 9), or EAG (Er 3Al5O 12).
In the above-described optical structure resistant to plasma erosion, the refractive index of the first optical film is different from the refractive index of the second optical film.
In the above-mentioned optical structure resistant to plasma erosion, the first optical film and the second optical film are formed by physical vapor deposition (PhysicalVapor Deposition, PVD), which may be selected from electron beam bombardment evaporation (E-gun) or plasma ion-assisted physical vapor deposition.
In the above-mentioned optical structure resistant to plasma erosion, the first optical film and the second optical film are formed by Chemical Vapor Deposition (CVD) selected from Chemical Vapor Deposition (CVD), plasma-assisted chemical vapor deposition (PECVD) or Atomic Layer Deposition (ALD).
The above-mentioned optical structure with resistance to plasma erosion also includes a metal reflective layer disposed between the transparent substrate and the plasma-resistant optical film layer.
The above-mentioned optical structure with resistance to plasma erosion also includes a buffer layer disposed between the transparent substrate and the plasma-resistant optical film layer.
In the above-mentioned optical structure resistant to plasma erosion, the expansion coefficient of the buffer layer is between the expansion coefficient of the transparent substrate and the expansion coefficient of the plasma resistant optical film layer.
The above-mentioned optical structure with resistance to plasma erosion further comprises a low-density optical film layer, wherein the low-density optical film layer is arranged on the other surface of the light-transmitting substrate, and the density of the low-density optical film layer is less than 4.
The utility model has the following advantages: has better erosion resistance to plasma.
To achieve the foregoing and other objects, and in accordance with the purpose of the utility model, as embodied and broadly described, a preferred embodiment of the present utility model is illustrated and described below.
Drawings
Fig. 1 is a schematic diagram of a first embodiment of a plasma erosion resistant optical structure 10.
Fig. 2 is a schematic diagram of a second embodiment of a plasma erosion resistant optical structure 20.
Fig. 3 is a schematic diagram of a third embodiment of a plasma erosion resistant optical structure 30.
Fig. 4 is a schematic diagram of a fourth embodiment of a plasma erosion resistant optical structure 40.
Fig. 5 is a schematic diagram of a fifth embodiment of a plasma erosion resistant optical structure 50.
Fig. 6 is a schematic diagram of a sixth embodiment of a plasma erosion resistant optical structure 60.
Detailed Description
Referring to fig. 1, fig. 1 is a schematic diagram of a first embodiment of a plasma erosion resistant optical structure 10. The optical structure 10 is typically disposed on a sidewall of a vacuum chamber 8, and the plasma is operated within the vacuum chamber 8.
The optical structure 10 resistant to plasma erosion comprises a light-transmitting substrate 11 and a plasma-resistant optical film 12. One surface of the plasma-resistant optical film layer 12 faces the inside of the vacuum chamber 8, and the other surface of the plasma-resistant optical film layer 12 is disposed on a surface of the transparent substrate 11, for example, quartz, and the transparent substrate 11 corresponds to an observation window for monitoring plasma.
In the above description, the plasma-resistant optical film layer 12 is disposed on the light-transmitting substrate 11, and is not limited to the case where the plasma-resistant optical film layer 12 is directly deposited on the light-transmitting substrate 11, and other films can be deposited between the plasma-resistant optical film layer 12 and the light-transmitting substrate 11.
Referring to fig. 1 again, the plasma resistant optical film layer 12 includes at least one first optical film 121 and at least one second optical film 122, and the second optical film 122 is overlapped on the first optical film 121. Specifically, in this embodiment, the plasma resistant optical film layer 12 includes four first optical films 121 and three second optical films 122, and the first optical films 121 and the second optical films 122 are stacked alternately (refer to fig. 1). Therefore, the innermost film and the outermost film of the plasma-resistant optical film layer 12 are both the first optical film 121, the first optical film 121 of the innermost layer is disposed on the transparent substrate 11, and the first optical film 121 of the outermost layer is directly contacted with the plasma toward the vacuum chamber 8.
In this embodiment, the main material of the first optical film 121 is a metal oxide, fluoride or nitride with a density not less than 4.5, such as yttrium trifluoride (YF 3), erbium oxide (Er 2O 3), gadolinium oxide (Gd 2O 3), yttrium oxide (Y2O 3), yttrium Oxyfluoride (YOF), yttrium aluminum garnet (YAG, Y3Al5O 12), yac (Y4 Al2O 9) or EAG (Er 3Al5O 12). Since the first optical film 121 is a solid high-density structure, the first optical film 121 is more resistant to bombardment by ions or neutral atoms in the plasma. Thus, the plasma resistant optical film layer 12 helps to prevent plasma from eroding the light transmissive substrate 11, i.e., the viewing window from being eroded by the plasma.
Further, in this embodiment, the refractive index of the first optical film 121 is different from the refractive index of the second optical film 122. For example, the first optical film 121 is, for example, yttrium oxide (Y2O 3) with a refractive index of 1.9, and the second optical film 122 is, for example, titanium dioxide (TiO 2) with a refractive index of 2.4. Thus, the structure is formed by staggered arrangement from top to bottom: small refractive index optical film (yttria), large refractive index optical film (titania), small refractive index optical film (yttria), structure of large refractive index optical film (titania), small refractive index optical film (yttria), large refractive index optical film (titania), small refractive index optical film (yttria). Thus, the optical structure 10 resistant to plasma erosion has better light transmittance according to the optical principle.
In addition, referring to fig. 2, fig. 2 is a schematic diagram of a second embodiment of a plasma erosion resistant optical structure 20. The difference between the optical structure 20 resistant to plasma attack and the optical structure 10 resistant to plasma attack is that: the plasma resistant optical film layer 22 of the plasma erosion resistant optical structure 20 includes four second optical films 122. In other words, the number of the second optical films 122 is the same as the number of the first optical films 121. Thus, in order to make the outermost film of the plasma resistant optical film layer 22 the first optical film 121, the innermost film of the plasma resistant optical film layer 22 is the second optical film 122. The second optical film 122 of the innermost layer is disposed on the light-transmitting substrate 11.
In addition, in the second embodiment, the refractive index of the first optical film 121 of the plasma-resistant optical film layer 22 is also different from the refractive index of the second optical film 122. For example, the first optical film 121 of the plasma optical film 22 is, for example, yttrium oxide (Y2O 3) with a refractive index of 1.9, and the second optical film 122 of the plasma optical film 22 is, for example, amorphous silicon (Amorphous silicon, a-Si) with a refractive index of 3.5. Thus, the structure is formed by staggered arrangement from top to bottom: large refractive index optical film (amorphous silicon) →small refractive index optical film (titanium dioxide) →structure of large refractive index optical film (amorphous silicon) →small refractive index optical film (titanium dioxide) →large refractive index optical film (amorphous silicon) →optical structure of small refractive index optical film (titanium dioxide). Thus, the optical structure 20 with resistance to plasma erosion has better reflection characteristics according to the optical principle.
In the above, the first optical film 121 and the second optical film 122 are formed by physical vapor deposition (Physical Vapor Deposition, PVD) or Chemical Vapor Deposition (CVD). Wherein the physical vapor deposition method can be selected from electron beam bombardment evaporation (E-gun) or plasma ion assisted physical vapor deposition (PCVD), and the chemical vapor deposition method can be selected from Chemical Vapor Deposition (CVD), plasma assisted chemical vapor deposition (PECVD) or Atomic Layer Deposition (ALD).
Referring to fig. 3, fig. 3 is a schematic diagram of a third embodiment of a plasma erosion resistant optical structure 30. The difference between the optical structure 30 resistant to plasma attack and the optical structure 10 resistant to plasma attack is that: the plasma resistant optical film layer 32 of the optical structure 30 resistant to plasma attack further comprises three third optical films 323, and the plasma resistant optical film layer 32 has only one first optical film 121, and the first optical film 121 is directly contacted with the plasma toward the vacuum chamber 8. The three third optical films 323 are stacked with the three second optical films 122 in a staggered manner, and the main materials of the third optical films 323 are, for example, silicon dioxide (SiO 2), titanium dioxide (TiO 2) or aluminum oxide (Al 2O 3), amorphous silicon (Amorphous silicon, a-Si) or silicon nitride (SiNx), and the densities of these materials are all less than 4, which is a low-density optical film. Since the outermost film of the plasma resistant optical film layer 32 is also the high density first optical film 121, and the surfaces of all the low density third optical films 323 do not need to be in contact with the plasma environment, the plasma erosion resistant optical structure 30 also helps to prevent plasma erosion of the transparent substrate 11, i.e. the viewing window from being eroded by plasma.
Referring to fig. 4, fig. 4 is a schematic diagram of a fourth embodiment of a plasma erosion resistant optical structure 40. The difference between the plasma erosion resistant optical structure 40 and the plasma erosion resistant optical structure 20 is that: the plasma erosion resistant optical structure 40 further comprises a metal reflective layer 43, wherein the metal reflective layer 43 is disposed between the transparent substrate 11 and the plasma resistant optical film layer 22. The metal reflective layer 43 is mainly made of silver (Ag), for example, and has a low refractive index and a high reflectivity, so that the optical structure 40 with plasma erosion resistance has better reflective properties.
Referring to fig. 5, fig. 5 is a schematic diagram of a fifth embodiment of a plasma erosion resistant optical structure 50. The difference between the plasma erosion resistant optical structure 50 and the plasma erosion resistant optical structure 10 is that: the plasma erosion resistant optical structure 50 further comprises a buffer layer 53, wherein the buffer layer 53 is disposed between the transparent substrate 11 and the plasma resistant optical film 12, and the buffer layer 53 is made of silicon nitride (SiNx), aluminum oxide (Al 2O 3), niobium pentoxide (Nb 2O 5) or zirconium dioxide (ZrO 2). It is noted that the expansion coefficient of the buffer layer 53 is between the expansion coefficient of the transparent substrate 11 and the expansion coefficient of the plasma resistant optical film layer 12. Thus, the buffer layer 53 can prevent the plasma-resistant optical film layer 12 from peeling due to the thermal stress of the vacuum chamber 8 caused by the process variation of heating or cooling.
Referring to fig. 6, fig. 6 is a schematic diagram of a sixth embodiment of a plasma erosion resistant optical structure 60. The difference between the plasma erosion resistant optical structure 60 and the plasma erosion resistant optical structure 10 is that: the optical structure 60 resistant to plasma etching further comprises a low-density optical film 63, wherein the low-density optical film 63 can be a single layer or two low-density optical films with different refractive indexes overlapped, and the main material is silicon dioxide (SiO 2), titanium dioxide (TiO 2) or aluminum oxide (Al 2O 3), amorphous silicon (Amorphous silicon, a-Si) or silicon nitride (SiNx), and the density of the materials is less than 4, so that the optical structure 60 resistant to plasma etching further has better light transmittance. In addition, the low-density optical film 63 is disposed on the other surface of the transparent substrate 11, so that the low-density optical film 63 is not in contact with the plasma environment. Thus, the plasma erosion resistant optical structure 60 can also prevent plasma erosion of the transparent substrate 11 through the plasma erosion resistant optical film layer 12. It should be noted that the low-density optical film 63 may also be disposed on the optical structure 20 with resistance to plasma etching according to the optical principle, so as to further increase the reflectivity.
The optical structure resistant to plasma erosion has better erosion resistance to plasma, and the optical structure resistant to plasma erosion also has better light transmittance or better reflection characteristic.
The utility model is described above without limiting the scope of the claims. Modifications and variations which may be made by those skilled in the art without departing from the spirit or scope of the utility model are intended to be included within the scope of the following claims.
Claims (12)
1. An optical structure resistant to plasma erosion comprising:
a light-transmitting substrate; and
A plasma-resistant optical film layer disposed on a surface of the transparent substrate, the plasma-resistant optical film layer comprising:
At least one first optical film; and
At least one second optical film superimposed on the first optical film;
Wherein the density of the first optical film is not less than 4.5.
2. The plasma erosion resistant optical structure of claim 1 wherein the outermost film of the plasma resistant optical film layer is the first optical film.
3. The plasma erosion resistant optical structure of claim 2 wherein when at least one of the first optical film or the second optical film is a plurality of the first optical films and the second optical films are stacked alternately.
4. The plasma erosion resistant optical structure of claim 2 wherein the plasma erosion resistant optical film layer further comprises at least one third optical film, wherein the third optical film and the second optical film are stacked alternately when at least one of the third optical film and the second optical film is a plurality of the third optical films.
5. The plasma erosion resistant optical structure of claim 1 wherein the plasma resistant optical film is oriented toward the interior of a vacuum chamber.
6. The plasma etch resistant optical structure of claim 1, wherein the refractive index of the first optical film is different from the refractive index of the second optical film.
7. The plasma erosion resistant optical structure of claim 1 wherein said first optical film and said second optical film are formed by physical vapor deposition selected from electron beam bombardment evaporation or plasma ion assisted physical vapor deposition.
8. The plasma erosion resistant optical structure of claim 1 wherein said first optical film and said second optical film are formed by chemical vapor deposition selected from the group consisting of chemical vapor deposition, plasma assisted chemical vapor deposition and atomic layer deposition.
9. The plasma erosion resistant optical structure of claim 1 further comprising a metallic reflective layer disposed between the light transmissive substrate and the plasma resistant optical film layer.
10. The plasma erosion resistant optical structure of claim 1 further comprising a buffer layer disposed between the light transmissive substrate and the plasma resistant optical film layer.
11. The plasma erosion resistant optical structure of claim 10 wherein said buffer layer has a coefficient of expansion between that of said light transmissive substrate and that of said plasma resistant optical film.
12. The plasma erosion resistant optical structure of claim 1 further comprising a low density optical film disposed on the other surface of the transparent substrate, the low density optical film having a density of less than 4.
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