CN220457293U - Low-ripple high-gain expandable modular converter based on quadratic Boost - Google Patents
Low-ripple high-gain expandable modular converter based on quadratic Boost Download PDFInfo
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- CN220457293U CN220457293U CN202321903442.8U CN202321903442U CN220457293U CN 220457293 U CN220457293 U CN 220457293U CN 202321903442 U CN202321903442 U CN 202321903442U CN 220457293 U CN220457293 U CN 220457293U
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Abstract
The utility model discloses a secondary Boost-based low-ripple high-gain expandable modular converter, which comprises a direct-current power supply, a power switch tube, a first diode, a first capacitor, a second diode, a first inductor, a second inductor, a multistage micro-ripple expandable circuit module and a load, wherein the micro-ripple expandable circuit module comprises two types, and the first micro-ripple expandable circuit module comprises two diodes, four capacitors and one coupling inductor; the second micro-ripple scalable circuit module comprises three diodes, six capacitors and a coupling inductor. Compared with the traditional quadratic Boost converter, the converter can adjust the micro-ripple expandable circuit module to be connected according to the output voltage required by the actual situation, has great adjustability of the converter gain, and is more flexible to use.
Description
Technical Field
The utility model belongs to the technical field of converters, and particularly relates to a secondary Boost-based low-ripple high-gain expandable modular converter.
Background
The high-voltage stable power supply of the electron beam welding machine (Electron Beam Welder, EBW) mainly provides energy for acceleration of electron beams, and the accuracy is an important factor for guaranteeing the welding quality. At present, the EBW at home and abroad widely uses a 12-pulse rectification voltage regulation mode, the circuit is simple, the technology is mature, but the problems of low voltage regulation precision and poor voltage stabilization performance exist, the bottleneck of the conventional high-voltage power supply is that the peak-to-peak value of the ripple index is too high, the direct-current high-voltage power supply is obtained through alternating-current boosting and rectifying filtering, the ripple wave is except for the ripple wave of the normal rectification waveform, the high-voltage conversion process can generate spike pulse voltage, and the direct-current output waveform is recessed due to the action of the inductance at the alternating-current side in the high-voltage rectification process, so that larger ripple wave is formed. The ability of the high voltage filter inductor and capacitor to cancel spike and dip voltages is greatly reduced due to parasitic parameters. In addition, the working current of the high-voltage power supply is generally smaller, the filtering effect of the inductance on normal ripple waves is not large, the capacitance value of the high-voltage capacitor is smaller, and all factors are unfavorable for reducing the ripple waves of the output voltage. In order to improve the accuracy of the power supply, improvements are required in terms of the structure and control method of the power supply. In the prior art, filtering is generally performed by adopting a filter, a high-frequency transition technology or impulse control technology and the like.
The filter comprises an active filter and a passive filter, and once the capacitor and the resistor fail or the calculation of the resistance and the capacitance is inaccurate, new ripple waves and noise are possibly mixed, and the output ripple waves are increased.
The high-frequency transition technology is added on the side of the direct-current power supply, an additional control loop and a complex auxiliary circuit are needed to be added in the scheme, the price is high, the whole switching power supply system is composed of discrete components, and the defects of poor integration level and low power density exist.
In impulse control technology, impulse control technology based on impulse equivalent principle, such as single cycle control technology, is proposed and applied to a direct current switching power supply to eliminate output low-frequency ripple of the direct current switching power supply, and simulation research performed by using a BUCK (BUCK converter) circuit shows that the output low-frequency ripple is only theoretically less than 5mv, but not completely eliminated, so that the frequency and the output voltage of the high-voltage switching power supply are limited, and the application range is limited.
As can be seen from the above, the improvement of the control method is difficult to achieve better results while improving the power supply structure, the conventional high-voltage switching power supply comprises a rectifying and filtering circuit, a DC chopper circuit, an inverter circuit, a resonant circuit, a high-frequency step-up transformer and a voltage doubling rectifying circuit, and the improvement is performed, for example, the prior-stage voltage stabilizing system adopts a double closed-loop voltage stabilizing control method, such as the "an electron beam accelerating power supply device and a control method (patent number: ZL 201410267554.8)" disclosed in the chinese patent literature, the prior-stage voltage stabilizing system adopts a DC-DC converter voltage regulating method, a three-phase rectangular wave inverter, a multi-phase rectangular wave high-voltage alternating current rectifying and filtering method, a parallel voltage stabilizing device output end is connected with a sampling signal for stabilizing the current of the high-voltage and the voltage stabilizing device, and a low-voltage power supply direct current feedforward compensation is performed to inhibit the ripple, and the post-stage voltage stabilizing system adopts a series high-voltage electronic tube regulating method, a negative feedback control for the sampling signal for the output voltage sampling device and a constant-temperature processing of the regulator to improve the steady-state precision and dynamic regulating speed of the output voltage. In this patent technology the power supply architecture puts higher demands on the converter circuit, while reducing the output ripple, there is no way to achieve higher gain. The circuit of the utility model not only can further reduce ripple wave on the basis of the circuit, but also can obtain higher voltage gain by expanding the micro ripple wave expandable circuit module.
Disclosure of Invention
The utility model aims to provide a high-gain expandable modular converter based on a quadratic Boost low ripple. The converter can realize large transformation ratio of input and output voltage, the control circuit is short, the voltage stress of the switching tube and the diode is reduced on the basis, and zero ripple of zero output current can be realized through reasonable allocation of various parameters in the coupling inductor.
The access of the micro-ripple expandable unit module enables the main circuit of the circuit to be expandable, the needed expandable unit level can be directly calculated according to the gain requirement of the converter in the actual design, then the circuit is built, the complexity of the circuit design is reduced, the use is flexible, and the application range is wide.
In order to achieve the technical purpose, the utility model adopts the following scheme:
a high-gain expandable modular converter based on a secondary Boost low-ripple comprises a direct-current power supply, a power switch tube, a first diode, a first capacitor, a second diode, a first inductor, a second inductor, a multistage micro-ripple expandable circuit module and a load; one end of the power switch tube is connected with the negative electrode of the direct current power supply, and the other end of the power switch tube is connected with the second diode, the second inductor and the first-stage micro-ripple expandable circuit module;
the anode of the first diode is connected with one end of the first inductor;
the anode of the second diode is connected with one end of the first inductor;
one end of the first inductor is connected with the positive electrode of the direct current power supply, and the other end of the first inductor is connected with the anode of the first diode;
one end of the second inductor is connected with the first capacitor and the first diode, and the other end of the second inductor is connected with the power switch tube, one end of the first diode and the first-stage micro-ripple expandable circuit module;
one end of the first capacitor is connected with the first diode and the second inductor, and the other end of the first capacitor is connected with the negative electrode of the direct current power supply;
the first-stage micro-ripple expandable circuit module is characterized by comprising 5 interfaces: the port (1), the port (2), the port (3), the port (4) and the port (5), wherein the port (1) is connected with a power switch tube, a second inductor and a cathode of a second diode, the port (2), the port (3) are connected with a power cathode, the port (4) is connected with a port (2) interface of a next stage, and the port (5) is connected with the port (1) of the next stage;
the intermediate stage micro-ripple expandable circuit module is characterized in that the intermediate stage micro-ripple expandable circuit module has 5 interfaces in total: the device comprises a port (1), a port (2), a port (3), a port (4) and a port (5), wherein the port (1) is connected with the port (5) of a previous stage micro-ripple expandable circuit module, the port (2) is connected with the port (4) of the previous stage micro-ripple expandable circuit module, the port (3) is connected with a power cathode, the port (4) is connected with a port (2) interface of a next stage, and the port (5) is connected with the port (1) of the next stage;
the last stage micro-ripple expandable circuit module has 5 interfaces in total: the device comprises a port (1), a port (2), a port (3), a port (4) and a port (5), wherein the port (1) is connected with the port (5) of a previous stage micro-ripple expandable circuit module, the port (2) is connected with the port (4) of the previous stage micro-ripple expandable circuit module, the port (3) is connected with a power cathode, the port (4) is connected with one end of a load, and the port (5) is suspended;
one end of the load is connected with a fourth interface of the last stage of the micro-ripple expandable circuit module, and the other end of the load is connected with the power cathode.
Further, the micro-ripple expandable circuit module comprises two types, the first micro-ripple expandable circuit module comprises two diodes, four capacitors and a coupling inductor, and the coupling inductor consists of a first coupling inductor and a second coupling inductor; the second micro-ripple expandable circuit module comprises three diodes, six capacitors and a coupling inductor, wherein the coupling inductor consists of three inductors, including a first coupling inductor, a second coupling inductor and a third coupling inductor.
Further, the two diodes are respectively diode VD 11 Diode VD 12 ；
The four capacitors are respectively capacitor C 11 Capacitance C 12 Capacitance C 13 Capacitance C 14 ；
The coupling inductance is formed by a first coupling inductance L 11 Second coupling inductance L 12 Composition;
port (1) and capacitor C 11 Connected with capacitor C 11 Another end and diode VD 11 Anode, capacitor C 13 One end and a first coupling inductance L of the coupling inductances 11 One end is connected;
port (2) and diode VD 11 The cathode is connected;
port (3) and capacitor C 12 And capacitor C 14 Is connected to one end of capacitor C 12 Is connected with the other end of the diode VD 12 Cathode and first coupling inductance L of coupling inductances 11 One end is connected with a capacitor C 14 And a second coupling inductance L of the coupling inductances 12 Are connected;
the port (4) and a second coupling inductance L of the coupling inductances 12 Capacitor C 14 Are connected;
VD of port (5) and diode 12 Anode, capacitor C 13 Second one of the coupling inductances L 12 One end is connected;
the first coupling inductance L 11 One end and a capacitor C 13 Capacitance C 11 Diode VD 11 The anode is connected with the other end of the diode VD 12 Cathode, capacitor C 12 Connected with the second coupling inductance L 12 One end and a capacitor C 13 Diode VD 12 The anode is connected with the other end of the capacitor C 14 Are connected.
Further, the three diodes are respectively diodes VD 11 Diode VD 12 Diode VD 13 ；
The six capacitors are respectively capacitor C 11 Capacitance C 12 Capacitance C 13 Capacitance C 14 Capacitance C 15 Capacitance C 16 ；
The coupling inductance is formed by a first coupling inductance L 11 Second coupling inductance L 12 Third coupling inductance L 13 Composition;
port (1) and capacitor C 11 Connected with capacitor C 11 Another end and diode VD 11 Anode, capacitor C 13 One end and a first coupling inductance L of the coupling inductances 11 One end is connected;
port (2) and diode VD 11 The cathode is connected;
port (3) and capacitor C 12 Capacitance C 14 And capacitor C 16 Is connected to one end of capacitor C 12 Is connected with the other end of the diode VD 12 Cathode and first coupling inductance L of coupling inductances 11 One end is connected with a capacitor C 14 Is connected with the other end of the diode VD 13 Second coupling inductance L of cathode coupling inductances 12 Connected with capacitor C 16 And a third coupling inductance L of the coupling inductances 13 Are connected;
third one of the port (4) and the coupling inductance L 13 Capacitor C 16 Are connected;
VD of port (5) and diode 13 Anode, capacitor C 15 Third one of the coupling inductances L 13 One end is connected;
the first coupling inductance L 11 One end and a capacitor C 13 Capacitance C 11 Diode VD 11 The anode is connected with the other end of the diode VD 12 Cathode, capacitor C 12 Connected with the second coupling inductance L 12 One end and a capacitor C 13 Capacitance C 15 Diode VD 12 The anode is connected with the other end of the diode VD 13 Cathode, capacitor C 14 Connected with the third coupling inductance L 13 One end and a capacitor C 15 Diode VD 13 The anode is connected with the other end of the capacitor C 16 Are connected.
Further, the coupling inductor adopts a magnetic integration structure, and the structure comprises a magnetic core, a first coupling inductor and a second coupling inductor, wherein a first coupling inductor winding is wound on a magnetic core middle column I, a second coupling inductor first winding is wound on a magnetic core side column III, and a second coupling inductor second winding is wound on a magnetic core side column II.
Further, the coupling inductor adopts a magnetic integration structure, the structure comprises a magnetic core, a first coupling inductor, a second coupling inductor, a third coupling inductor first winding and a third coupling inductor second winding, the first coupling inductor and the second coupling inductor are wound on a magnetic core center pillar I, the third coupling inductor first winding is wound on a magnetic core side pillar III, and the third coupling inductor second winding is wound on a magnetic core side pillar II.
Further, air gaps are formed on the side posts.
Further, only one first-stage first-type micro-ripple extensible circuit module is based on the quadratic Boost low-ripple high-gain extensible modular converter, and the voltage gain of the converter in the whole change period of the duty ratio is as follows:
if the voltage gain of the secondary Boost low-ripple high-gain expandable modularized converter based on the n-level first micro-ripple expandable circuit module is
Further, only one secondary Boost low-ripple high-gain expandable modularized converter with one stage of second type micro-ripple expandable circuit module is provided, and the voltage gain of the converter in the whole change period of the duty ratio is:
if the voltage gain of the second-class Boost low-ripple high-gain expandable modularized converter based on the m-class first micro-ripple expandable circuit module is as follows:
further, if the second-type Boost-based low-ripple high-gain scalable modular converter is superimposed with the first type of n-stage micro-ripple scalable circuit module and the second type of m-stage micro-ripple scalable circuit module, the voltage gain is as follows:
the utility model has the following beneficial effects:
(1) The coupling inductor adopts a magnetic integrated structure, so that the volume of a magnetic part is greatly reduced, the power density is further improved, and the output ripple is reduced. By superposing the micro-ripple expandable circuit module, the secondary Boost converter has wider range of voltage rise and fall variation capability, and meanwhile, the switch voltage stress and the output ripple are obviously reduced.
(2) Compared with the traditional secondary Boost converter, the secondary Boost-based low-ripple high-gain expandable modular converter can adjust the micro-ripple expandable circuit module to be connected according to the output voltage required by the actual situation, has great adjustability of the converter gain, and is more flexible to use.
(3) The secondary Boost-based low-ripple high-gain expandable modular converter disclosed by the utility model has the advantages that the expandable circuit is modularized, and compared with other expandable circuits, the practical connection is more convenient, and the expansion is easier.
(4) Compared with the traditional secondary Boost converter, the secondary Boost-based low-ripple high-gain expandable modularized converter has lower voltage stress of a switching tube and a diode, is beneficial to subsequent device model selection and improves overall efficiency.
(5) The secondary Boost low-ripple high-gain expandable modular converter adopts the inductive coupling technology, can theoretically achieve zero ripple of output current by adjusting the mutual parameters of coupling inductors, overcomes the defect of large ripple of the output current, does not need to additionally increase auxiliary circuits compared with circuits through an improved control method, and has simple design.
Drawings
Fig. 1 is a main circuit diagram of a secondary Boost-based low-ripple high-gain scalable modular converter of the present utility model.
Fig. 2 is a simplified diagram of a first micro-ripple scalable circuit module used in the present utility model.
Fig. 3 is a simplified diagram of a second micro-ripple scalable circuit module used in the present utility model.
Fig. 4 is a diagram of a dual inductively coupled inductive magnetic integration architecture for an EE-core used in the present utility model.
Fig. 5 is a diagram of a three-inductively coupled inductor magnetic integration architecture for an EE-core used in the present utility model.
Fig. 6 is an equivalent circuit diagram of a primary converter circuit with only one stage of the first micro-ripple scalable circuit module in mode one and mode two.
Fig. 7 is an equivalent circuit diagram of a primary converter circuit with only one stage of a second micro-ripple scalable circuit module in mode one and mode two.
Detailed Description
The utility model is further described below with reference to the accompanying drawings, it being noted that the following detailed description is illustrative and is intended to provide further explanation of the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
As shown in fig. 1, the secondary Boost-based low-ripple high-gain scalable modular converter of the present utility model comprises a dc power supply (U in ) A power switch tube (VT), a first diode (VD) 1 ) A first capacitor (C 1 ) Second diode (VD) 2 ) First inductor (L) 1 ) Second inductor (L) 2 ) A multistage micro-ripple scalable circuit module and a load (R), wherein the micro-ripple scalable circuit module has two types, the first type comprises two diodes (VD 11 、VD 12 ) Four capacitors (C 11 ，C 12 ，C 13 ，C 14 ) And a coupling inductance formed by a first coupling inductance (L 11 ) Second coupling inductance (L 12 ) The second one comprises three diodes (VD 11 、VD 12 、VD 13 ) Six capacitors (C 11 ，C 12 ，C 13 ，C 14 ，C 15 ，C 16 ) And a coupling inductance consisting of three inductances, including a first coupling inductance (L 11 ) Second coupling inductance (L 12 ) Third coupling inductance (L 13 ) Composition is prepared.
One end of the power switch tube is connected with the negative electrode of the direct current power supply, and the other end of the power switch tube is connected with the second diode, the second inductor and the first-stage micro-ripple expandable circuit module.
The anode of the first diode is connected with one end of the first inductor.
The anode of the second diode is connected with one end of the first inductor.
One end of the first inductor is connected with the positive electrode of the direct current power supply, and the other end of the first inductor is connected with the anode of the first diode and the anode of the second diode.
One end of the second inductor is connected with the first capacitor and the first diode, and the other end of the second inductor is connected with the power switch tube, one end of the first diode and the first-stage micro-ripple expandable circuit module.
One end of the first capacitor is connected with the first diode and the second inductor, and the other end of the first capacitor is connected with the negative electrode of the direct current power supply.
The first stage micro ripple expandable circuit module has 5 interfaces in total: port (1), port (2), port (3), port (4), port (5). The port (1) is connected with the cathodes of the power switch tube, the second inductor and the second diode, the port (2), the port (3) are connected with the power supply cathode, the port (4) is connected with the port (2) interface of the next stage, and the port (5) is connected with the port (1) of the next stage.
The intermediate stage micro ripple expandable circuit module has 5 interfaces in total: port (1), port (2), port (3), port (4), port (5). The port (1) is connected with the port (5) of the previous stage micro-ripple expandable circuit module, the port (2) is connected with the port (4) of the previous stage micro-ripple expandable circuit module, the port (3) is connected with the power cathode, the port (4) is connected with the port (2) of the next stage in an interface manner, and the port (5) is connected with the port (1) of the next stage.
The last stage of micro ripple expandable circuit module has 5 interfaces in total: port (1), port (2), port (3), port (4), port (5). The port (1) is connected with the port (5) of the previous stage micro-wave expandable circuit module, the port (2) is connected with the port (4) of the previous stage micro-wave expandable circuit module, the port (3) is connected with the power cathode, the port (4) is connected with one end of the load, and the port (5) is suspended.
One end of the load is connected with a fourth interface of the last stage of the micro-ripple expandable circuit module, and the other end of the load is connected with the power cathode.
As shown in fig. 2, the first micro-ripple scalable circuit module and its simplified circuit comprise two diodes (VD 11 、VD 12 ) Four capacitors (C 11 ，C 12 ，C 13 ，C 14 ) And a coupling inductance formed by a first coupling inductance (L 11 ) Second coupling inductance (L 12 ) Composition is prepared.
Port (1) and capacitor C 11 Connected with capacitor C 11 Another end and diode VD 11 Anode, capacitor C 13 One end and a first one of the coupling inductances (L 11 ) One end is provided withAre connected.
Port (2) and diode VD 11 The cathode is connected.
Port (3) and capacitor C 12 And capacitor C 14 Is connected to one end of capacitor C 12 Is connected with the other end of the diode VD 12 A cathode and a first one of the coupled inductances (L 11 ) One end is connected with a capacitor C 14 And a second one of the coupled inductors (L 12 ) Are connected.
The port (4) is coupled to a second one (L 12 ) Capacitor C 14 Are connected.
VD of port (5) and diode 12 Anode, capacitor C 13 And a second one of the coupling inductances (L 12 ) One end is connected.
Said first coupling inductance (L 11 ) One end and a capacitor C 13 Capacitance C 11 Diode VD 11 The anode is connected with the other end of the diode VD 12 Cathode, capacitor C 12 Is connected to said second coupling inductance (L 12 ) One end and a capacitor C 13 Diode VD 12 The anode is connected with the other end of the capacitor C 14 Are connected.
As shown in fig. 3, the second micro-ripple scalable circuit module and its simplified circuit comprise three diodes (VD 11 、VD 12 、VD 13 ) Six capacitors (C 11 ，C 12 ，C 13 ，C 14 ，C 15 ，C 16 ) And a coupling inductance consisting of three inductances, including a first coupling inductance (L 11 ) Second coupling inductance (L 12 ) Third coupling inductance (L 13 ) Composition is prepared.
Port (1) and capacitor C 11 Connected with capacitor C 11 Another end and diode VD 11 Anode, capacitor C 13 One end and a first one of the coupling inductances (L 11 ) One end is connected.
Port (2) and diode VD 11 The cathode is connected.
Port (3) and capacitor C 12 Capacitance C 14 And capacitor C 16 Is connected to one end of capacitor C 12 Is connected with the other end of the diode VD 12 A cathode and a first one of the coupled inductances (L 11 ) One end is connected with a capacitor C 14 Is connected with the other end of the diode VD 13 Second one of the cathode coupling inductances (L 12 ) Connected with capacitor C 16 And a third one of the coupled inductors (L 13 ) Are connected.
The port (4) is coupled to a third one (L 13 ) Capacitor C 16 Are connected.
VD of port (5) and diode 13 Anode, capacitor C 15 A third one of the coupling inductances (L 13 ) One end is connected.
Said first coupling inductance (L 11 ) One end and a capacitor C 13 Capacitance C 11 Diode VD 11 The anode is connected with the other end of the diode VD 12 Cathode, capacitor C 12 Is connected to said second coupling inductance (L 12 ) One end and a capacitor C 13 Capacitance C 15 Diode VD 12 The anode is connected with the other end of the diode VD 13 Cathode, capacitor C 14 Is connected to, said third coupling inductance (L 13 ) One end and a capacitor C 15 Diode VD 13 The anode is connected with the other end of the capacitor C 16 Are connected.
As shown in FIG. 4, the magnetic integration structure of the dual-inductance coupling inductor of the EE type magnetic core used in the present utility model is mainly characterized in that the magnetic integration structure comprises an EE magnetic core, a first coupling inductor L 11 Second coupling inductance L 12， The first coupling inductance winding is wound on the magnetic core middle column I, the second coupling inductance first winding is wound on the magnetic core side column III, the second coupling inductance second winding is wound on the magnetic core side column II, and air gaps are formed in the three magnetic columns of the EE magnetic core. Two coupling inductance relations can be obtained through the magnetic integration design mode:
in which L 11 、L 12 Is self-inductance, M 12 Is the inductance L 11 And L is equal to 12 Mutual inductance, di L11 /dt、di L12 Dt is respectively inductance L 11 、L 12 Is a current change rate of (a).
Fig. 5 is a diagram of a three-inductively coupled inductor magnetic integration structure of an EE-type core used in the present utility model. The magnetic integration technology is mainly characterized in that the magnetic integration structure comprises an EE magnetic core and a first coupling inductance L 11 Second coupling inductance L 12 Third coupling inductance first winding L 31 Third inductively coupled second winding L 32 The first coupling inductance and the second coupling inductance winding are wound on a magnetic core middle column I, the third coupling inductance first winding is wound on a magnetic core side column III, the third coupling inductance second winding is wound on a magnetic core side column II, and the three magnetic columns of the EE magnetic core are all provided with air gaps phi 1 ，φ 2 Respectively, the magnetic flux generated by the corresponding inductance phi 31 And phi is equal to 32 Is the inductance L 3 Magnetic flux on different magnetic columns, where N 1 ，N 2 ，N 31 ，N 32 For the number of turns of the coil wound on the magnetic core of each inductor, three coupling inductance relations can be obtained through the magnetic integration design mode:
in which L 11 、L 12 、L 13 Is self-inductance, M 12 Is the inductance L 11 And L is equal to 12 Mutual inductance M of 23 Is the inductance L 12 And L is equal to 13 Mutual inductance M of 13 Is the inductance L 11 And L is equal to 13 Is a mutual inductance of (a). Wherein M is 12 ＝M 21 ，M 13 ＝M 31 ，M 23 ＝M 32 。
Fig. 6 is an equivalent circuit diagram of a converter main circuit with only one stage of the first micro ripple scalable circuit module in mode 1 and mode 2.
In mode I, the switching tube is controlledVT on: VD (vacuum deposition) 1 、VD 11 With VD 12 Shut off, VD 2 Conducting. Power supply U in To the first inductance L 1 Charging, capacitor C 1 Warp loop C 1 –L 2 –C 1 Is the second inductance L 2 Charging, capacitor C 11 Warp loop C 11 –L 11 –C 12 –C 11 Is the inductance L 11 And C 12 Charging while capacitor C 13 Warp loop C 11 –C 13 –L 12 –R–C 11 Charging a load, furthermore a capacitor C 14 Warp loop C 14 –R–C 14 Charging the load.
In U L1 、U L2 、U L11 、U L12 Respectively the first inductances (L 1 ) Second inductor (L) 2 ) First coupling inductance (L 11 ) Second coupling inductance (L 12 ) Voltage value of U C1 、U C11 、U C12 、U C13 Respectively, are capacitors (C 1 ) Capacitor (C) 11 ) Capacitor (C) 12 ) Capacitor (C) 13 ) D is the duty ratio of the switching tube, U in U is the voltage of the direct current power supply o Is the output voltage of the load resistor.
In mode II, the control switch VT turns off: VD (vacuum deposition) 1 、VD 11 With VD 12 Conduction, VD 2 And (5) switching off. Power supply U in And a first inductance L 1 Warp U in –L 1 –C 1 –U in To C 1 Charging, second inductance L 2 Then by VD 11 L at conduction 2 –C 11 –C 1 –L 2 To C 1 And C 11 Charging, inductance L 11 Through L 11 –C 13 –L 11 Give electric capacity C 13 Charging, capacitor C 12 And inductance L 12 Through C 12 –L 12 –R–C 12 For load and capacitor C 14 And (5) charging.
The volt-second theorem for each inductance is available by equations (3) and (4):
finally, the transformer main circuit transformation ratio of the first-stage first-type micro-ripple expandable circuit module can be obtained through the formula (5):
similarly, when n first micro-ripple scalable circuit modules are stacked, the converter main circuit transformer ratio is:
as can be seen from formulas (5) and (6) and the equivalent circuit of each semiconductor device in fig. 6 when turned off, the switching transistor (VT), the diode (VD 1 、VD 2 、VD 11 、VD 12 ) The voltage stress of (2) is:
the voltage stress formula analysis shows that the voltage stress of each power device is lower.
VT can be obtained by equations (1), (3) and (5) when conducting:
VT can be obtained by equations (2), (3) and (5) when conducting:
the inductor L is available when the switching tube VT is switched on or off 12 The current change rates of (2) are respectively:
as can be seen from (10), no matter whether the switching tube Vt is on or off, when the coupling inductance is not fully coupled (K<1:K is the coupling coefficient of the coupling inductance), provided that the coupling inductance M is satisfied 12 And inductance L 11 Equal, i.e. M 12 ＝L 11 The output current with zero ripple wave can be obtained theoretically, and the target requirement of the utility model is met.
Fig. 7 is an equivalent circuit diagram of the converter main circuit with only one stage of the second micro ripple scalable circuit module in mode 1 and mode 2.
In mode I, when the control switching tube VT is turned on: VD (vacuum deposition) 1 、VD 11 、VD 12 With VD 13 Shut off, VD 2 Conducting. Power supply U in To the first inductance L 1 Charging, capacitor C 1 Warp loop C 1 –L 2 –C 1 Is the second inductance L 2 Charging, capacitor C 11 Warp loop C 11 –L 11 –C 12 –C 11 Is the inductance L 11 And C 12 Charging, capacitor C 13 Warp loop C 11 –C 13 –L 12 –R–C 11 Is C 14 Charging while capacitor C 15 Warp loop C 11 –C 13 –C 15 –L 13 –R–C 11 Charging a load, furthermore a capacitor C 16 Warp loop C 16 –R–C 16 Charging the load.
In mode II, the control switch tube VT is closedWhen the power is off: VD (vacuum deposition) 1 、VD 11 With VD 12 Conduction, VD 2 And (5) switching off. Power supply U in And a first inductance L 1 Warp U in –L 1 –C 1 –U in To C 1 Charging, second inductance L 2 Then by VD 11 L at conduction 2 –C 11 –C 1 –L 2 To C 1 And C 11 Charging, inductance L 11 Through L 11 –C 13 –L 11 Give electric capacity C 13 Charging, capacitor C 12 And electricity through C 12 –C 15 –C 14 –C 12 For C 15 Charging, inductance L 12 Through L 12 –C 15 –L 12 Give electric capacity C 15 Charging, capacitor C 14 And inductance L 13 Through C 14 –L 13 –R–C 14 For load and capacitor C 16 And (5) charging.
The volt-second theorem for each inductance is obtained by equations (12) and (13):
the converter main circuit transformer ratio of only one stage of the first micro ripple expandable circuit module can be finally obtained by the formula (14):
similarly, when the converter main circuit transformation ratio of the superposition of the m first micro-ripple expandable circuit modules is:
according to the formulas (14), (15) and the individual semiconductor devices in fig. 6The equivalent circuit when the element is turned off is known as a switching tube (VT), a diode (VD 1 、VD 2 、VD 11 、VD 12 ) The voltage stress of (2) is:
the voltage stress formula analysis shows that the voltage stress of each power device is lower.
VT may be derived from equations (12), (14) and (15) when on:
VT can be obtained by equations (13), (14) and (15) when conducting:
from the formulae (2), (18) and (19), the output current I can be known L13 The ripple relationship is as follows:
VT on time
VT off:
from equations (20) and (21), it can be seen that whether the switching transistor VT is on or off, the condition M is satisfied 12 ＝M 13 And L is 22 ＝M 23 In this way, zero ripple output current can be obtained theoretically, and the target requirement of the utility model is met.
The above is considered only in the specific output situation when one expansion module is added, when the multi-stage modules are used, the specific situation gains are changed, for example, the first micro-ripple expandable circuit module of n stages and the second micro-ripple expandable circuit module of m stages, and the voltage gains are as follows:
due to the modularity, the conditions of its micro-ripple are unchanged. After the current stage is subject to micro-ripple, the circuit of the next stage is further subject to microwaves, but the effect is not changed much.
The foregoing description of the preferred embodiments of the utility model is illustrative of the present utility model and is to be construed as limited to the embodiments disclosed herein.
Claims (10)
1. The utility model provides a scalable modularization converter of low ripple high gain based on quadratic Boost which characterized in that: the power supply comprises a direct-current power supply, a power switch tube, a first diode, a first capacitor, a second diode, a first inductor, a second inductor, a multistage micro-ripple expandable circuit module and a load; one end of the power switch tube is connected with the negative electrode of the direct current power supply, and the other end of the power switch tube is connected with the second diode, the second inductor and the first-stage micro-ripple expandable circuit module;
the anode of the first diode is connected with one end of the first inductor;
the anode of the second diode is connected with one end of the first inductor;
one end of the first inductor is connected with the positive electrode of the direct current power supply, and the other end of the first inductor is connected with the anode of the first diode;
one end of the second inductor is connected with the first capacitor and the first diode, and the other end of the second inductor is connected with the power switch tube, one end of the first diode and the first-stage micro-ripple expandable circuit module;
one end of the first capacitor is connected with the first diode and the second inductor, and the other end of the first capacitor is connected with the negative electrode of the direct current power supply;
the first-stage micro-ripple expandable circuit module is characterized by comprising 5 interfaces: the port (1), the port (2), the port (3), the port (4) and the port (5), wherein the port (1) is connected with a power switch tube, a second inductor and a cathode of a second diode, the port (2), the port (3) are connected with a power cathode, the port (4) is connected with a port (2) interface of a next stage, and the port (5) is connected with the port (1) of the next stage;
the intermediate stage micro-ripple expandable circuit module is characterized in that the intermediate stage micro-ripple expandable circuit module has 5 interfaces in total: the device comprises a port (1), a port (2), a port (3), a port (4) and a port (5), wherein the port (1) is connected with the port (5) of a previous stage micro-ripple expandable circuit module, the port (2) is connected with the port (4) of the previous stage micro-ripple expandable circuit module, the port (3) is connected with a power cathode, the port (4) is connected with a port (2) interface of a next stage, and the port (5) is connected with the port (1) of the next stage;
the last stage micro-ripple expandable circuit module has 5 interfaces in total: the device comprises a port (1), a port (2), a port (3), a port (4) and a port (5), wherein the port (1) is connected with the port (5) of a previous stage micro-ripple expandable circuit module, the port (2) is connected with the port (4) of the previous stage micro-ripple expandable circuit module, the port (3) is connected with a power cathode, the port (4) is connected with one end of a load, and the port (5) is suspended;
one end of the load is connected with a fourth interface of the last stage of the micro-ripple expandable circuit module, and the other end of the load is connected with the power cathode.
2. The quadratic Boost-based low ripple high gain scalable modular converter of claim 1, wherein: the micro-ripple expandable circuit module comprises two types, wherein the first type of micro-ripple expandable circuit module comprises two diodes, four capacitors and a coupling inductor, and the coupling inductor consists of a first coupling inductor and a second coupling inductor; the second micro-ripple expandable circuit module comprises three diodes, six capacitors and a coupling inductor, wherein the coupling inductor consists of three inductors, including a first coupling inductor, a second coupling inductor and a third coupling inductor.
3. The quadratic Boost-based low ripple high gain scalable modular converter of claim 2, wherein:
the two diodes are respectively diode VD 11 Diode VD 12 ；
The four capacitors are respectively capacitor C 11 Capacitance C 12 Capacitance C 13 Capacitance C 14 ；
The coupling inductance is formed by a first coupling inductance L 11 Second coupling inductance L 12 Composition;
port (1) and capacitor C 11 Connected with capacitor C 11 Another end and diode VD 11 Anode, capacitor C 13 One end and a first coupling inductance L of the coupling inductances 11 One end is connected;
port (2) and diode VD 11 The cathode is connected;
port (3) and capacitor C 12 And capacitor C 14 Is connected to one end of capacitor C 12 Is connected with the other end of the diode VD 12 Cathode and first coupling inductance L of coupling inductances 11 One end is connected with a capacitor C 14 And a second coupling inductance L of the coupling inductances 12 Are connected;
the port (4) and a second coupling inductance L of the coupling inductances 12 Capacitor C 14 Are connected;
VD of port (5) and diode 12 Anode, capacitor C 13 Second one of the coupling inductances L 12 One end is connected;
the first coupling inductance L 11 One end and a capacitor C 13 Capacitance C 11 Diode VD 11 The anode is connected with the other end of the diode VD 12 Cathode, capacitor C 12 Connected with the second coupling inductance L 12 One end and a capacitor C 13 Diode VD 12 The anode is connected with the other end of the capacitor C 14 Are connected.
4. The quadratic Boost-based low ripple high gain scalable modular converter of claim 2, wherein:
the three diodes are respectively diodes VD 11 Diode VD 12 Diode VD 13 ；
The six capacitors are respectively capacitor C 11 Capacitance C 12 Capacitance C 13 Capacitance C 14 Capacitance C 15 Capacitance C 16 ；
The coupling inductance is formed by a first coupling inductance L 11 Second coupling inductance L 12 Third coupling inductance L 13 Composition;
port (1) and capacitor C 11 Connected with capacitor C 11 Another end and diode VD 11 Anode, capacitor C 13 One end and a first coupling inductance L of the coupling inductances 11 One end is connected;
port (2) and diode VD 11 The cathode is connected;
port (3) and capacitor C 12 Capacitance C 14 And capacitor C 16 Is connected to one end of capacitor C 12 Is connected with the other end of the diode VD 12 Cathode and first coupling inductance L of coupling inductances 11 One end is connected with a capacitor C 14 Is connected with the other end of the diode VD 13 Second coupling inductance L of cathode coupling inductances 12 Connected with capacitor C 16 And a third coupling inductance L of the coupling inductances 13 Are connected;
third one of the port (4) and the coupling inductance L 13 Capacitor C 16 Are connected;
VD of port (5) and diode 13 Anode, capacitor C 15 Third one of the coupling inductances L 13 One end is connected;
the first coupling inductance L 11 One end and a capacitor C 13 Capacitance C 11 Diode VD 11 The anode is connected with the other end of the diode VD 12 Cathode, capacitor C 12 Connected with the second coupling inductance L 12 One end and a capacitor C 13 Capacitance C 15 Diode VD 12 The anode is connected with the other end of the diode VD 13 Cathode, capacitor C 14 Connected with the third coupling inductance L 13 One end and a capacitor C 15 Diode VD 13 The anode is connected with the other end of the capacitor C 16 Are connected.
5. The quadratic Boost-based low ripple high gain scalable modular converter of claim 3, wherein: the coupling inductor adopts a magnetic integrated structure, and the structure comprises a magnetic core, a first coupling inductor and a second coupling inductor, wherein a first coupling inductor winding is wound on a magnetic core middle column I, a second coupling inductor first winding is wound on a magnetic core side column III, and a second coupling inductor second winding is wound on a magnetic core side column II.
6. The quadratic Boost low ripple high gain based scalable modular converter of claim 4, wherein: the coupling inductor adopts a magnetic integration structure, the structure comprises a magnetic core, a first coupling inductor, a second coupling inductor, a third coupling inductor first winding and a third coupling inductor second winding, the first coupling inductor and the second coupling inductor are wound on a magnetic core middle column I, the third coupling inductor first winding is wound on a magnetic core side column III, and the third coupling inductor second winding is wound on a magnetic core side column II.
7. The quadratic Boost low ripple high gain based scalable modular converter of claim 5 or 6, wherein: air gaps are formed on the side posts.
8. The quadratic Boost-based low ripple high gain scalable modular converter of claim 2, wherein: a scalable modular converter based on low ripple and high gain of secondary Boost only has a first stage of a scalable circuit module of micro ripple, and the voltage gain of the converter is as follows in the whole change period of the duty ratio:
if the voltage gain of the secondary Boost low-ripple high-gain expandable modularized converter based on the n-level first micro-ripple expandable circuit module is
9. The quadratic Boost-based low ripple high gain scalable modular converter of claim 2, wherein: only one stage of second type micro-ripple expandable circuit module is a secondary Boost-based low-ripple high-gain expandable modular converter, and the voltage gain of the converter is as follows in the whole change period of the duty ratio:
if the voltage gain of the second-class Boost low-ripple high-gain expandable modularized converter based on the m-class first micro-ripple expandable circuit module is as follows:
10. the quadratic Boost low ripple high gain based scalable modular converter of claim 9, wherein: if the second-type Boost-based low-ripple high-gain expandable modular converter is overlapped with the first type of the n-level micro-ripple expandable circuit module and the second type of the m-level micro-ripple expandable circuit module, the voltage gain is as follows:
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