CN220450276U - Coating device and solar cell production system - Google Patents
Coating device and solar cell production system Download PDFInfo
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- CN220450276U CN220450276U CN202321849587.4U CN202321849587U CN220450276U CN 220450276 U CN220450276 U CN 220450276U CN 202321849587 U CN202321849587 U CN 202321849587U CN 220450276 U CN220450276 U CN 220450276U
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- 239000011248 coating agent Substances 0.000 title claims abstract description 40
- 238000000576 coating method Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 139
- 238000000151 deposition Methods 0.000 claims abstract description 97
- 230000008021 deposition Effects 0.000 claims abstract description 97
- 238000004891 communication Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 12
- 239000013049 sediment Substances 0.000 claims 4
- 238000000034 method Methods 0.000 abstract description 31
- 230000008569 process Effects 0.000 abstract description 31
- 238000010924 continuous production Methods 0.000 abstract description 4
- 239000002243 precursor Substances 0.000 description 40
- 230000004888 barrier function Effects 0.000 description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 30
- 229910052802 copper Inorganic materials 0.000 description 28
- 239000010949 copper Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 23
- 230000010354 integration Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004868 gas analysis Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a coating device. The coating device provided by the utility model comprises a first physical vapor deposition chamber, a rapid plasma deposition chamber and a second physical vapor deposition chamber. Wherein the fast plasma deposition chamber is in communication with the first physical vapor deposition chamber, and the second physical vapor deposition chamber is in communication with the fast plasma deposition chamber. The utility model can realize continuous production and avoid the mutual influence among different process environments. The utility model also provides a solar cell production system comprising the coating device.
Description
Technical Field
The utility model relates to the technical field of solar cells, in particular to a film plating device and a solar cell production system.
Background
In the fabrication of solar cells, a Transparent Conductive (TCO) layer is typically first fabricated on a solar cell precursor, followed by a copper seed layer on the transparent conductive layer. Wherein, the transparent conductive layer and the copper seed layer are prepared by PVD (physical vapor deposition) process. However, when the PVD process is used to prepare the copper seed layer, copper atoms are highly reactive, and thus easily penetrate the transparent conductive layer and combine with the solar cell precursor, thereby affecting the quality of the solar cell precursor and further affecting the conversion efficiency of the subsequently prepared solar cell. To solve this problem, a barrier layer is generally prepared on the transparent conductive layer by PVD process after preparing the transparent conductive layer and before preparing the copper seed layer, so as to prevent copper atoms from penetrating the transparent conductive layer.
Currently, the transparent conductive layer, the barrier layer and the copper seed layer are generally prepared in the same chamber of a plating device by PVD process. However, since materials and preparation conditions of the transparent conductive layer, the barrier layer, and the copper seed layer are different, frequent changes in process parameters are required, and continuous production is not possible. In addition, the preparation in the same chamber also affects the process environment mutually, so that the quality of the film layer is reduced.
Disclosure of Invention
Based on this, it is necessary to provide a coating apparatus which can be continuously produced and which can avoid the interaction between different process environments.
In addition, there is a need to provide a solar cell production system comprising the coating device.
At least one embodiment of the present utility model provides a coating apparatus, including:
a first physical vapor deposition chamber;
a fast plasma deposition chamber, the fast plasma deposition chamber being in communication with the first physical vapor deposition chamber; and
and the second physical vapor deposition chamber is communicated with the rapid plasma deposition chamber.
In some of these embodiments, the rapid plasma deposition chamber comprises:
the first rapid plasma deposition integral cavity is communicated with the first physical vapor deposition cavity; and
the second rapid plasma deposition chamber is communicated with the first rapid plasma deposition chamber and the second gas phase deposition chamber.
In some embodiments, the coating device further comprises:
the first cache chamber is arranged between the first rapid plasma deposition chamber and the second rapid plasma deposition chamber, and is communicated with the first rapid plasma deposition chamber and the second rapid plasma deposition chamber.
In some embodiments, the coating device further comprises:
the cooling chamber is arranged between the first physical vapor deposition chamber and the rapid plasma deposition chamber, and is communicated with the first physical vapor deposition chamber and the rapid plasma deposition chamber.
In some embodiments, the coating device further comprises:
the first connecting chamber is arranged between the first physical vapor deposition chamber and the cooling chamber, and is communicated with the first physical vapor deposition chamber and the cooling chamber.
In some embodiments, the coating device further comprises:
the second connecting chamber is arranged between the rapid plasma deposition chamber and the second physical vapor deposition chamber and is communicated with the rapid plasma deposition chamber and the second physical vapor deposition chamber.
In some embodiments, the first physical vapor deposition chamber comprises a first physical vapor deposition chamber, a first isolation chamber and a second physical vapor deposition chamber which are communicated with each other, and the first isolation chamber is arranged between the first physical vapor deposition chamber and the second physical vapor deposition chamber.
In some embodiments, the second physical vapor deposition chamber includes a third physical vapor deposition chamber, a second isolation chamber, and a fourth physical vapor deposition chamber that are in communication with each other, and the second isolation chamber is disposed between the third physical vapor deposition chamber and the fourth physical vapor deposition chamber.
In some embodiments, the coating device further comprises:
the heating chamber is arranged on one side, far away from the rapid plasma deposition chamber, of the first physical vapor deposition chamber, and the heating chamber is communicated with the first physical vapor deposition chamber.
At least one embodiment of the utility model provides a solar cell production system, which comprises the coating device.
The coating device provided by the utility model comprises a first physical vapor deposition chamber, a rapid plasma deposition chamber and a second physical vapor deposition chamber which are communicated with each other, wherein the first physical vapor deposition chamber is used for preparing the transparent conductive layer, the rapid plasma deposition chamber is used for preparing the barrier layer, and the second physical vapor deposition chamber is used for preparing the copper seed layer, namely, the transparent conductive layer, the barrier layer and the copper seed layer are prepared in one chamber instead of being prepared in three chambers, and the chambers are mutually independent, so that the process parameters do not need to be frequently changed, and continuous production can be realized. In addition, as the transparent conductive layer, the barrier layer and the copper seed layer are respectively prepared in the three chambers, the mutual influence among different process environments can be avoided, and the quality of the film layer is improved.
Drawings
Fig. 1 is a schematic structural diagram of a film plating device provided by the utility model.
Reference numerals: 100-coating device; 10-a first physical vapor deposition chamber; 101-a first physical vapor deposition chamber; 102-first isolation subchambers; 103-a second physical phase sedimentation integral cavity; 20-a rapid plasma deposition chamber; 201-a first fast plasma deposition chamber; 202-a second rapid plasma deposition chamber; 30-a second physical vapor deposition chamber; 301-a third physical vapor deposition integrating cavity; 302-a second isolation subchamber; 303-fourth physical vapor deposition integral chamber; 40-a first buffer chamber; 41-cooling the chamber; 50-a first connection chamber; 60-a second connection chamber; 70-a second buffer chamber; 80-heating the chamber; 81-a third connection chamber; 82-a vacuum chamber; 90-breaking the cavity; 91-fourth connection chamber.
Detailed Description
In order that the utility model may be readily understood, a more complete description of the utility model will be rendered by reference to the appended drawings. Preferred embodiments of the present utility model are shown in the drawings. This utility model may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, at least one embodiment of the present utility model provides a coating apparatus 100, where the coating apparatus 100 includes a first physical vapor deposition chamber 10, a rapid plasma deposition chamber 20, and a second physical vapor deposition chamber 30.
In one embodiment, the first physical vapor deposition chamber 10 is in communication with the rapid plasma deposition chamber 20. Wherein the first physical vapor deposition chamber 10 is used for preparing a transparent conductive layer on a solar cell precursor. In the actual production process, the solar cell precursor is transported into the first physical vapor deposition chamber 10, and the transparent conductive layer is prepared in the first physical vapor deposition chamber 10 by adopting a PVD magnetron sputtering process.
In an embodiment, the first pvd chamber 10 includes a first pvd chamber 101, a first isolation chamber 102 and a second pvd chamber 103 that are in communication with each other, and the first isolation chamber 102 is disposed between the first pvd chamber 101 and the second pvd chamber 103. The first physical vapor deposition integral cavity 101 is used for preparing a transparent conductive layer on one surface of the solar cell precursor, and the second physical vapor deposition integral cavity 103 is used for preparing a transparent conductive layer on the other surface of the solar cell precursor.
Wherein the first physical vapor deposition chamber 10 is a high temperature process chamber. Since the first physical vapor deposition integrating cavity 101 and the second physical vapor deposition integrating cavity 103 respectively coat different surfaces of the solar cell precursor, in order to prevent the occurrence of sputtering with mutual influence to affect the sputtering quality and edge effect of the film layer, the first isolation separating cavity 102 is disposed between the first physical vapor deposition integrating cavity 101 and the second physical vapor deposition integrating cavity 103, so as to increase the distance between the first physical vapor deposition integrating cavity 101 and the second physical vapor deposition integrating cavity 103.
In one embodiment, the material of the transparent conductive layer comprises Indium Tin Oxide (ITO).
In one embodiment, the solar cell precursor comprises a silicon wafer, a first intrinsic amorphous silicon film and an N-type amorphous silicon film sequentially laminated on one surface of the silicon wafer, and a second intrinsic amorphous silicon film and a P-type amorphous silicon film sequentially laminated on the other surface of the silicon wafer. In one embodiment, the silicon wafer may be a textured silicon wafer.
In one embodiment, the fast plasma deposition chamber 20 includes a first fast plasma deposition chamber 201 and a second fast plasma deposition chamber 202 in communication with each other.
In one embodiment, the first rapid plasma deposition chamber 201 is used to fabricate a barrier layer on the transparent conductive layer. In one embodiment, the barrier layer may be a titanium tungsten barrier layer. In the actual production process, the solar cell precursor with the transparent conductive layer prepared is transported into the first rapid plasma deposition integral cavity 201, and the barrier layer is prepared on the transparent conductive layer by adopting a Rapid Plasma Deposition (RPD) process.
In one embodiment, a first cold trap device is disposed within the first rapid plasma deposition chamber 201. Wherein the first cold trap device is used to reduce the temperature in the first rapid plasma deposition chamber 201 to ensure the low temperature environment required in the preparation of the barrier layer.
In one embodiment, the second rapid plasma deposition chamber 202 is used to fabricate a barrier layer on another of the transparent conductive layers. In an actual production process, the solar cell precursor with the barrier layer prepared is transported into the second rapid plasma deposition chamber 202, and the barrier layer is prepared on the other transparent conductive layer by using a Rapid Plasma Deposition (RPD) process.
In one embodiment, a second cold trap device is disposed within the second rapid plasma deposition chamber 202. Wherein the second cold trap device is used to reduce the temperature in the second rapid plasma deposition chamber 202 to ensure the low temperature environment required in the preparation of the barrier layer.
In one embodiment, the second physical vapor deposition chamber 30 is disposed on a side of the rapid plasma deposition chamber 20 away from the first physical vapor deposition chamber 10, and the second physical vapor deposition chamber 30 is in communication with the rapid plasma deposition chamber 20. Wherein the second physical phase deposition chamber 30 is used to prepare a copper seed layer on the barrier layer. In the actual production process, the solar cell precursor with the prepared barrier layer is transported into the second physical vapor deposition chamber 30, and a PVD magnetron sputtering process is adopted to prepare a copper seed layer in the second physical vapor deposition chamber 30.
In an embodiment, the second physical vapor deposition chamber 30 includes a third physical vapor deposition chamber 301, a second isolation chamber 302, and a fourth physical vapor deposition chamber 303 that are in communication with each other, and the second isolation chamber 302 is disposed between the third physical vapor deposition chamber 301 and the fourth physical vapor deposition chamber 303. Wherein the third physical vapor deposition chamber 301 is used to prepare a copper seed layer on the barrier layer, and the fourth physical vapor deposition chamber 303 is used to prepare a copper seed layer on another barrier layer.
The third and fourth physical vapor deposition chambers 301 and 303 are respectively coated on different surfaces of the solar cell precursor with the barrier layer, so as to prevent sputtering from being affected by each other to affect the sputtering quality and edge effect of the film layer, and therefore, the second isolation chamber 302 is disposed between the third and fourth physical vapor deposition chambers 301 and 303 to increase the distance between the third and fourth physical vapor deposition chambers 301 and 303.
In one embodiment, a first Residual Gas Analysis (RGA) element is disposed within the third gas phase settling chamber 301. The first residual gas analysis element is configured to monitor and analyze gases such as water vapor in the third gas deposition integration cavity 301, so as to better control the preparation effect of the copper seed layer.
In one embodiment, a second Residual Gas Analysis (RGA) element is disposed within the fourth PVD integrating chamber 303. The second residual gas analysis element is configured to monitor and analyze gases such as water vapor in the fourth pvd integrating cavity 303, so as to better control the preparation effect of the copper seed layer.
In one embodiment, the coating apparatus 100 further includes a first buffer chamber 40. In an embodiment, the first buffer chamber 40 is disposed between the first rapid plasma deposition chamber 201 and the second rapid plasma deposition chamber 202, and the first buffer chamber 40 is in communication with the first rapid plasma deposition chamber 201 and the second rapid plasma deposition chamber 202. The first buffer chamber 40 is used for performing a first buffer treatment on the solar cell precursor with the barrier layer completed. Thus, in the production process, when the solar cell precursor is abnormal in the first rapid plasma deposition chamber 201, the abnormal solar cell precursor can be buffered by using the first buffer chamber 40, so as to avoid the abnormal solar cell precursor from being transported into the second rapid plasma deposition chamber 202. Meanwhile, the first buffer chamber 40 may be used to buffer the solar cell precursor that is not available for discharging, so as to avoid that too much solar cell precursor is transported into the second rapid plasma deposition chamber 202, and avoid damage caused by congestion or collision in the transportation process, so that the production line can run reliably and stably.
In one embodiment, the first buffer chamber 40 may be a device having a storage space.
In one embodiment, the coating apparatus 100 further comprises a cooling chamber 41. In an embodiment, the cooling chamber 41 is disposed between the second gas phase deposition chamber 103 and the first fast plasma deposition chamber 201, and the cooling chamber 41 communicates with the second gas phase deposition chamber 103 and the first fast plasma deposition chamber 201. Wherein the cooling chamber 41 is used to cool the solar cell precursor completing the transparent conductive layer in order to prepare the barrier layer within the first rapid plasma deposition chamber 201.
In one embodiment, a cold pump or a cryogenic nitrogen reservoir is provided in the cooling chamber 41. The gas storage tank can release gas to properly empty the cooling cavity, so that the cooling speed of the solar cell precursor is accelerated.
In one embodiment, the plating device 100 further includes a first connecting chamber 50. In an embodiment, the first connecting chamber 50 is disposed between the second physical vapor deposition chamber 103 and the cooling chamber 41, and the first connecting chamber 50 communicates the second physical vapor deposition chamber 103 and the cooling chamber 41. Wherein the first connection chamber 50 is used for preventing the second physical phase deposition chamber 103 from leaking gas. In the actual production process, since the physical vapor deposition process is adopted for preparing the transparent conductive layer in the second gas deposition integrating cavity 103, the second gas deposition integrating cavity 103 has plasma gas therein, and the first connecting cavity 50 is disposed between the second gas deposition integrating cavity 103 and the first rapid plasma deposition integrating cavity 201, so that the plasma gas in the second gas deposition integrating cavity 103 can be prevented from leaking into the first rapid plasma deposition integrating cavity 201.
In one embodiment, the plating device 100 further includes a second connecting chamber 60. In an embodiment, the second connection chamber 60 is disposed between the second rapid plasma deposition chamber 202 and the third physical vapor deposition chamber 301, and the second connection chamber 60 communicates with the second rapid plasma deposition chamber 202 and the third physical vapor deposition chamber 301. The second connection chamber 60 is used for preventing the third physical vapor deposition integration chamber 301 from leaking. In the actual production process, since the physical vapor deposition process is adopted for preparing the copper seed layer in the third qi deposition integrating cavity 301, the third qi deposition integrating cavity 301 is provided with the plasma gas, and the second connection chamber 60 is disposed between the second rapid plasma deposition integrating cavity 202 and the third qi deposition integrating cavity 301, so that the plasma gas in the third qi deposition integrating cavity 301 can be prevented from leaking into the second rapid plasma deposition integrating cavity 202.
In one embodiment, the plating device 100 further includes a second buffer chamber 70. In an embodiment, the second buffer chamber 70 is disposed between the second rapid plasma deposition chamber 202 and the second connection chamber 60, and the second buffer chamber 70 communicates with the second rapid plasma deposition chamber 202 and the second connection chamber 60. The second buffer chamber 70 is used for performing a second buffer treatment on the solar cell precursor with the barrier layer completed. Thus, in the production process, when the solar cell precursor is abnormal in the second rapid plasma deposition chamber 202, the abnormal solar cell precursor can be buffered by the second buffer chamber 70, so as to avoid the abnormal solar cell precursor from being transported into the second connection chamber 60. Meanwhile, the second buffer chamber 70 may be used to buffer the solar cell precursor that is not available for discharging, so as to avoid excessive solar cell precursor being transported into the second connection chamber 60, and avoid damage caused by congestion or collision in the transportation process, so that the production line can operate reliably and stably.
In one embodiment, the second buffer chamber 70 may be a device having a storage space.
In one embodiment, the coating apparatus 100 further comprises a heating chamber 80. In one embodiment, the heating chamber 80 is disposed on a side of the first physical vapor deposition chamber 10 remote from the rapid plasma deposition chamber 20, and the heating chamber 80 is in communication with the first physical vapor deposition chamber 10. Wherein the heating chamber 80 is used to heat the solar cell precursor to facilitate the preparation of the transparent conductive film within the first physical vapor deposition chamber 10.
In one embodiment, the coating apparatus 100 further includes a third connecting chamber 81. In an embodiment, the third connection chamber 81 is disposed between the heating chamber 80 and the first physical vapor deposition chamber 101, and the third connection chamber 81 communicates with the heating chamber 80 and the first physical vapor deposition chamber 101. Wherein the third connection chamber 81 is used for preventing the first physical vapor deposition chamber 101 from leaking. In the actual production process, since the physical vapor deposition process is adopted for preparing the transparent conductive layer in the first physical vapor deposition integral cavity 101, the plasma gas is contained in the first physical vapor deposition integral cavity 101, and the third connection chamber 81 is arranged between the heating chamber 80 and the first physical vapor deposition integral cavity 101, so that the plasma gas in the first physical vapor deposition integral cavity 101 can be prevented from leaking into the heating chamber 80.
In one embodiment, the plating device 100 further includes a vacuum chamber 82. In an embodiment, the vacuum chamber 82 is disposed on a side of the heating chamber 80 remote from the third connection chamber 81, and the vacuum chamber 82 communicates with the heating chamber 80. Wherein the vacuum chamber 82 is used to provide a vacuum environment for the solar cell precursor.
In one embodiment, the coating apparatus 100 further comprises a breaking cavity 90. In one embodiment, the breaking cavity 90 is disposed at a side of the fourth pvd integration cavity 303 away from the second connection cavity 60. Wherein the broken cavity 90 is communicated with the fourth physical vapor deposition integration cavity 303. Wherein the breaking cavity 90 is used for providing an atmospheric pressure environment for the solar cell precursor after the copper seed layer is prepared.
In one embodiment, the solar cell precursor after the copper seed layer is prepared may be removed from the broken chamber 90 by a robot arm.
In one embodiment, the plating device 100 further includes a fourth connecting chamber 91. In an embodiment, the fourth connection chamber 91 is disposed between the fourth physical vapor deposition chamber 303 and the breaking chamber 90, and the fourth connection chamber 91 communicates with the fourth physical vapor deposition chamber 303 and the breaking chamber 90. Wherein the fourth connection chamber 91 is configured to prevent the fourth physical vapor deposition chamber 303 from leaking. In the actual production process, since the physical vapor deposition process is adopted for preparing the copper seed layer in the fourth physical vapor deposition integration cavity 303, the plasma gas is contained in the fourth physical vapor deposition integration cavity 303, and the fourth connection cavity 91 is disposed between the fourth physical vapor deposition integration cavity 303 and the broken cavity 90, so that the plasma gas in the fourth physical vapor deposition integration cavity 303 can be prevented from leaking into the broken cavity 90.
As shown in fig. 1, the solar cell precursor is placed in the vacuum chamber 82 by a mechanical arm, then the solar cell precursor disposed in the vacuum chamber 82 is transported to the first physical vapor deposition integrating chamber 101 after passing through the heating chamber 80 and the third connecting chamber 81 in sequence, and a physical vapor deposition process is adopted in the first physical vapor deposition integrating chamber 101 to prepare the transparent conductive layer on one surface of the solar cell precursor, the solar cell precursor after completing the transparent conductive layer is transported to the second physical vapor deposition integrating chamber 103 after passing through the first isolation dividing chamber 102, and a physical vapor deposition process is adopted in the second physical vapor deposition integrating chamber 103 to prepare the transparent conductive layer on the other surface of the solar cell precursor, then the solar cell precursor after completing the transparent conductive layer is transported to the first rapid plasma deposition chamber 201 through the first connection chamber 50 and the cooling chamber 41 in sequence, the rapid plasma deposition process is adopted in the first rapid plasma deposition chamber 201 to prepare the barrier layer on the transparent conductive layer, the solar cell precursor after completing the barrier layer is transported to the second rapid plasma deposition chamber 202 through the first buffer chamber 40, the rapid plasma deposition process is adopted in the second rapid plasma deposition chamber 202 to prepare the barrier layer on the other transparent conductive layer, then the solar cell precursor after completing the barrier layer is transported to the third gas phase deposition chamber 301 through the second buffer chamber 70 and the second connection chamber 60 in sequence, and a physical vapor deposition process is adopted in the third physical vapor deposition integrating cavity 301 to prepare the copper seed layer on the barrier layer, the solar cell precursor after the copper seed layer is completed is transported to the fourth physical vapor deposition integrating cavity 303 after passing through the second isolation dividing cavity 302, a physical vapor deposition process is adopted in the fourth physical vapor deposition integrating cavity 303 to prepare the copper seed layer on another barrier layer, and finally a finished product is obtained, the finished product is transported to the cavity breaking chamber 90 after passing through the fourth connecting cavity 91, and another mechanical arm takes the finished product out of the cavity breaking chamber 90.
The utility model also provides a solar cell production system, which comprises the coating device 100.
The film plating device 100 provided by the utility model comprises a first physical vapor deposition chamber 10, a rapid plasma deposition chamber 20 and a second physical vapor deposition chamber 30 which are communicated with each other, wherein the first physical vapor deposition chamber 10 is used for preparing a transparent conductive layer, the rapid plasma deposition chamber 20 is used for preparing a barrier layer, and the second physical vapor deposition chamber 30 is used for preparing a copper seed layer, namely, the transparent conductive layer, the barrier layer and the copper seed layer are prepared in one chamber instead of being prepared in three chambers, and the chambers are mutually independent, so that the process parameters are not required to be changed frequently, and continuous production is realized. In addition, as the transparent conductive layer, the barrier layer and the copper seed layer are respectively prepared in the three chambers, the mutual influence among different process environments can be avoided, and the quality of the film layer is improved.
In the conventional film plating apparatus 100, since the PVD magnetron sputtering process is used to prepare the barrier layer, the quality of the prepared barrier layer is poor, and therefore, different carrier plates are required to be used, that is, one carrier plate is required to be used when preparing the transparent conductive layer, another carrier plate is required to be used when preparing the barrier layer, and another carrier plate is required to be used when preparing the copper seed layer, that is, the carrier plates are required to be replaced frequently, so that frequent loading and unloading are caused. In the coating device 100 provided by the utility model, the RPD technology is adopted to prepare the barrier layer, and the quality of the prepared barrier layer is higher, so that the carrier plate does not need to be replaced frequently, namely the transparent conductive layer, the barrier layer and the copper seed layer are prepared by using the same carrier plate, and therefore, the loading and unloading are not required frequently, thereby simplifying the operation and improving the production efficiency.
In addition, the coating device 100 provided by the utility model has the following advantages:
1. has no influence on the process and reduces the workload of staff.
2. The manual intervention is reduced, the debugging of the manual frequent operation process formula is not needed, and the stability of the production line is improved.
3. The film plating device 100 of the present utility model can simultaneously prepare the transparent conductive layer, the barrier layer and the copper seed layer, and the three processes are not interfered with each other and are simultaneously performed, which has a great positive effect on the breakthrough of productivity.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the utility model, which are described in detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model. Accordingly, the scope of protection of the present utility model is to be determined by the appended claims.
Claims (10)
1. A coating device (100), characterized by comprising:
a first physical vapor deposition chamber (10);
-a fast plasma deposition chamber (20), the fast plasma deposition chamber (20) being in communication with the first physical vapor deposition chamber (10); and
a second physical vapor deposition chamber (30), the second physical vapor deposition chamber (30) being in communication with the fast plasma deposition chamber (20).
2. The plating device (100) according to claim 1, wherein the fast plasma deposition chamber (20) comprises:
a first rapid plasma deposition chamber (201), the first rapid plasma deposition chamber (201) being in communication with the first physical vapor deposition chamber (10); and
a second fast plasma deposition chamber (202), the second fast plasma deposition chamber (202) communicating the first fast plasma deposition chamber (201) with the second physical phase deposition chamber (30).
3. The coating device (100) according to claim 2, wherein the coating device (100) further comprises:
the first cache chamber (40), first cache chamber (40) set up in first quick plasma sediment chamber (201) with between second quick plasma sediment chamber (202), first cache chamber (40) intercommunication first quick plasma sediment chamber (201) with second quick plasma sediment chamber (202).
4. The coating device (100) according to claim 1, wherein the coating device (100) further comprises:
and the cooling chamber (41) is arranged between the first physical vapor deposition chamber (10) and the rapid plasma deposition chamber (20), and the cooling chamber (41) is communicated with the first physical vapor deposition chamber (10) and the rapid plasma deposition chamber (20).
5. The coating device (100) according to claim 4, wherein the coating device (100) further comprises:
the first connecting chamber (50), the first connecting chamber (50) set up in between first physical vapor deposition cavity (10) and cooling chamber (41), first connecting chamber (50) intercommunication first physical vapor deposition cavity (10) with cooling chamber (41).
6. The coating device (100) according to claim 1, wherein the coating device (100) further comprises:
the second connecting chamber (60), the second connecting chamber (60) is arranged between the rapid plasma deposition chamber (20) and the second physical vapor deposition chamber (30), and the second connecting chamber (60) is communicated with the rapid plasma deposition chamber (20) and the second physical vapor deposition chamber (30).
7. The coating device (100) according to any one of claims 1 to 6, wherein the first physical vapor deposition chamber (10) comprises a first physical vapor deposition chamber (101), a first isolation chamber (102) and a second physical vapor deposition chamber (103) which are in communication with each other, and the first isolation chamber (102) is disposed between the first physical vapor deposition chamber (101) and the second physical vapor deposition chamber (103).
8. The coating device (100) according to any one of claims 1 to 6, wherein the second physical vapor deposition chamber (30) comprises a third physical vapor deposition chamber (301), a second isolation chamber (302) and a fourth physical vapor deposition chamber (303) which are communicated with each other, and the second isolation chamber (302) is disposed between the third physical vapor deposition chamber (301) and the fourth physical vapor deposition chamber (303).
9. The coating device (100) according to any one of claims 1 to 6, wherein the coating device (100) further comprises:
the heating chamber (80), the heating chamber (80) set up in first physical vapor deposition cavity (10) keep away from the one side of quick plasma deposition cavity (20), heating chamber (80) with first physical vapor deposition cavity (10) intercommunication.
10. A solar cell production system, characterized by comprising a coating device (100) according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321849587.4U CN220450276U (en) | 2023-07-13 | 2023-07-13 | Coating device and solar cell production system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321849587.4U CN220450276U (en) | 2023-07-13 | 2023-07-13 | Coating device and solar cell production system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220450276U true CN220450276U (en) | 2024-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202321849587.4U Active CN220450276U (en) | 2023-07-13 | 2023-07-13 | Coating device and solar cell production system |
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| Country | Link |
|---|---|
| CN (1) | CN220450276U (en) |
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2023
- 2023-07-13 CN CN202321849587.4U patent/CN220450276U/en active Active
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