CN220421666U - Resonance auxiliary circuit for improving driving reliability of power device - Google Patents
Resonance auxiliary circuit for improving driving reliability of power device Download PDFInfo
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- CN220421666U CN220421666U CN202322059401.1U CN202322059401U CN220421666U CN 220421666 U CN220421666 U CN 220421666U CN 202322059401 U CN202322059401 U CN 202322059401U CN 220421666 U CN220421666 U CN 220421666U
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
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Abstract
The utility model discloses a resonance auxiliary circuit for improving driving reliability of a power device, and belongs to the technical field of driving of power electronic devices. The resonance auxiliary driving circuit comprises a capacitor C q 、C p Resistance R q 、R p Diode VD 1 、VD 2 、VD 3 Voltage stabilizing tube VD z And an inductance Lr. Through resistance R q And R is p Can realize the capacitance C by the ratio of q And C p The voltage division of the power supply module is realized, the negative pressure turn-off and the positive pressure turn-on can be carried out only by positive voltage power supply, and the resonance auxiliary circuit can effectively inhibit the voltage peak of forward crosstalk and reverse crosstalk, so that the power device can reliably operate at higher switching frequency. Compared with the traditional driving method, the utility model can work at a higher switching speed and reduce the switching loss.
Description
Technical Field
The utility model belongs to the technical field of driving of power devices, and particularly relates to a resonance auxiliary circuit for improving driving reliability of a power device.
Background
With the recent high-speed development of the power electronics technology and the computer technology, the power transmission technology based on the control of the power device and the power converter has been increasingly widely applied to various aspects of national economy, such as electric automobiles, high-speed railways, industrial robots, numerical control machine tools, and the like. The driving technology of the power device is one of the cores of the power converter control, and the working reliability of the power device directly influences whether the power converter and even the electric transmission system can run healthily and the performance of the power converter and even the electric transmission system is good.
In recent years, electric transmission technology is increasingly developed towards high power, high rotation speed and high dynamic, which puts higher demands on power devices and driving technology thereof, wherein the power devices with high switching speed are increasingly favored, and particularly, the development trend is accelerated by the proposal of wide forbidden band materials and devices. For example, siC materials have the advantages of high forbidden bandwidth, high breakdown field strength, high saturation rate, and the like, so that SiC MOSFETs have higher switching speeds, lower on-resistance, lower junction temperatures, and extremely low tailing currents relative to Si-based devices, thereby greatly improving dynamic performance, reducing the volume weight of the device, and achieving higher operating efficiency.
However, the pursuit of high speed and high dynamics inevitably leads to a technical challenge in the application of power devices, namely, the high switching speed in the working process can lead the power devices to bear higher dv/dt and di/dt, stray parameters with insignificant influence at low frequency can generate voltage current oscillation and peak which cause damage to the normal operation of the electric transmission system. For SiC MOSFETs, which have a lower turn-on voltage threshold and allow for gate-source negative voltages, the crosstalk effects caused by high dv/dt and di/dt become more severe.
In order to reduce the negative effects caused by crosstalk under high dynamic control, the crosstalk phenomenon needs to be suppressed on the driving circuit of the power device, and the methods widely adopted at present can be roughly classified into three types: (1) The grid-source parallel capacitor is used for restraining the peak caused by crosstalk by increasing the equivalent capacitance of the grid source, and the method is simple in design and good in crosstalk restraining effect. But the switching speed of the power device is affected, which is unfavorable for the high-speed switching on of the power device, and the switching-on and switching-off loss is increased. (2) By adopting active gate drive, an additional auxiliary capacitor is connected in parallel between the gate and the source by actively opening the auxiliary transistor, so that active suppression is performed during crosstalk without affecting the switching speed, but most active gate circuits are complex due to the complexity of control, and the design difficulty is high. (3) Negative pressure turn-off and multi-level drive, except positive voltage (turn-on) and zero voltage (steady-state turn-off), a negative voltage is added for turn-off process, namely multi-level drive, the turn-off speed can be effectively increased by utilizing negative pressure turn-off, meanwhile, forward turn-on crosstalk can be restrained, but a problem is caused by the negative pressure turn-off, a larger negative pressure peak can be caused at the turn-off moment of the other complementary power tube of the bridge arm, and the power device can be broken down seriously.
For this reason, in view of the above-mentioned technical problems, it is necessary to innovate the driving method of the current power device, and reduce the forward and reverse voltage spikes caused by crosstalk during high-speed switching.
Disclosure of Invention
Aiming at the defects of the prior art, the utility model provides a resonance auxiliary circuit for improving the driving reliability of a power device, which can effectively inhibit crosstalk peaks caused by high-speed switches of the power device.
The technical scheme adopted by the utility model is as follows: a resonance auxiliary circuit for improving driving reliability of a power device is arranged on a driving IC and a gate driving resistor R of the power device g Between them;
the resonance auxiliary circuit comprises a resistor R q Resistance R p Capacitance C q Capacitance C p Diode VD 1 Diode VD 2 Diode VD 3 Voltage stabilizing tube VD z And inductance L r ；
The resistor R q Capacitance C q And diode VD 1 After being connected in parallel, one end is connected with the output end of the drive IC, and the other end is connected with the gate drive resistor R g Connecting; resistor R in parallel p And capacitor C p And voltage stabilizing tube VD z Connected in parallel with diode VD 2 Reverse series connection is connected into the gate driving resistor R g A branch; the inductance L r And diode VD 3 Is connected in parallel with the gate driving resistor R after being connected in series g A branch circuit, the resistor R p Capacitance C p Voltage stabilizing tube VD z And inductance L r Is connected to the reference potential point.
Preferably, the power device is silicon-based or silicon carbide-based IGBT, MOSFET and GaN.
The working time sequence of the resonance auxiliary circuit comprises three stages of a pre-charge stage, a forward crosstalk suppression stage and a reverse crosstalk suppression stage.
The precharge phase is turned on corresponding to [0-t ] of the operation timing 0 ]In the interval, the drive chip continuously supplies the turn-on signal to charge the loop so as to enable the capacitor C p 、C q Reaching an initial voltage, wherein the partial pressure value is defined by R q 、R p The resistance ratio is determined, namely, the capacitance voltage after stabilization is respectively:
wherein V is Cp 、V Cq Respectively the capacitance C p 、C q Voltage at V GG A power supply voltage provided for driving the chip. Adjusting R p And R is q The resistance ratio of the power device can be adjusted, the turn-on voltage and the turn-off voltage of the power device can be adjusted, and the power device is pre-chargedAfter electricity is completed, the gate voltage meets V gs_L ＝V Cp +V d Wherein V is d Is diode VD 1 、VD 2 Is connected with the pressure drop of the conducting tube. At this time, VD3 is not conducted due to the back pressure, and the power device is in a steady-state conducting state.
The forward crosstalk suppression phase corresponds to [ t ] of the operation timing sequence 0 -t 4 ]In the section, when the signal is turned off, the output voltage of the driving chip is reduced to 0V, and the diode VD 2 From capacitor C p Back-pressure turn-off due to capacitance C p Far greater than the gate capacitance, the capacitance voltage is approximately unchanged during the turn-off. At this time, capacitor C q Negative pressure is provided for the grid electrode, so that the power device is rapidly turned off. At the same time through C q -L r -VD 3 Loop, capacitor C q Energy-wise inductance L of (2) r Transferring to gradually make the negative pressure reach zero. By setting its energy transfer time, a suitable negative pressure can be provided temporarily to attenuate the peak of the positive crosstalk when the positive crosstalk comes.
The reverse crosstalk suppression phase corresponds to [ t ] of the operation timing sequence 5 -t 7 ]Interval with capacitance C q Energy-wise inductance L of (2) r Continuously transferring, capacitance C q The voltage is continuously reduced and is lower than that of the diode VD 1 Positive conduction voltage drop V of (2) d After that, VD 1 Conduction, under the clamping action of the diode, the capacitor C q Reverse voltage of voltage drop of one diode is born, and inductance passes through diode VD 1 、VD 3 Freewheels, and inductively releases energy. At the same time, the gate voltage is controlled by capacitor C q In parallel, by designing a capacitor C q Parasitic capacitance C far greater than power device gs The gate voltage can be clamped so as not to be turned on by mistake. In the case of reverse crosstalk, capacitor C q Positive-voltage slightly positive-voltage capacitor C for providing diode conduction voltage drop for grid electrode q The negative pressure peak can be well restrained, and the gate electrode of the power device is protected from breakdown.
Time sequence of operation [ t ] 7 -t 8 ]The interval is the next turn-on precharge stage, and the power supply voltage V of the driving chip GG Counter capacitor C p Charging to make the gate voltage fastRise to V Cp +V d . Simultaneous capacitance C q From loop V GG -C q -VD 2 -VD z Charging to prepare for the next turn-off, voltage stabilizing diode VD z Voltage of V z Capacitance C q The charge completion voltage is V Cq ＝V GG -V z -V d . So by choosing the appropriate zener diode VD z The regulated value may change the off negative pressure.
The beneficial effects are that: the utility model realizes the high-reliability driving of the power device through the resonance auxiliary circuit, effectively inhibits the voltage peak of forward crosstalk and reverse crosstalk in the high-speed switching process of the power device, prevents the overvoltage risk caused by the bridge arm crosstalk phenomenon to the normal operation of the power converter, and the resonance auxiliary circuit is composed of passive devices without inputting additional PWM signals, thereby having the advantages of strong anti-interference capability and easy realization.
Drawings
Fig. 1 is a schematic diagram of a resonant auxiliary circuit of the present utility model.
Fig. 2 is a timing diagram of the operation of the resonant tank circuit.
Fig. 3 (a), 3 (b) and 3 (c) are three operation modes of the resonant auxiliary driving circuit.
Detailed Description
The technical scheme of the utility model is described in detail below with reference to the accompanying drawings and the specific embodiments:
as shown in fig. 1, a resonance auxiliary circuit for improving driving reliability of a power device is provided in a driving IC and a gate driving resistor R of the power device g Between them;
the resonance auxiliary circuit comprises a resistor R q Resistance R p Capacitance C q Capacitance C p Diode VD 1 Diode VD 2 Diode VD 3 Voltage stabilizing tube VD z And inductance L r ；
The resistor R q Capacitance C q And diode VD 1 After being connected in parallel, one end is connected with the output end of the drive IC, and the other end is driven by the gate electrodeDynamic resistor R g Connecting; resistor R in parallel p And capacitor C p And voltage stabilizing tube VD z Connected in parallel with diode VD 2 Reverse series connection is connected into the gate driving resistor R g A branch; the inductance L r And diode VD 3 Is connected in parallel with the gate driving resistor R after being connected in series g A branch circuit, the resistor R p Capacitance C p Voltage stabilizing tube VD z And inductance L r Is connected to the reference potential point.
The resonance auxiliary circuit for improving the driving reliability of the power device is suitable for silicon-based or silicon carbide-based IGBT, MOSFET, gaN and other semiconductor power devices.
Fig. 2 is a timing diagram of the operation of the resonant auxiliary circuit including three phases of an on precharge phase, a forward crosstalk suppression phase, and a reverse crosstalk suppression phase.
The precharge phase is turned on corresponding to [0-t ] of the operation timing 0 ]In the interval, the drive chip continuously supplies the turn-on signal to charge the loop so as to enable the capacitor C p 、C q Reaching an initial voltage, wherein the partial pressure value is defined by R q 、R p The resistance ratio is determined, namely, the capacitance voltage after stabilization is respectively:
wherein V is Cp 、V Cq Respectively the capacitance C p 、C q Voltage at V GG A power supply voltage provided for driving the chip. Adjusting R p And R is q The resistance ratio of the power device can be adjusted, the turn-on voltage and the turn-off voltage of the power device can be adjusted, and the gate voltage after the precharge is completed can meet V gs_L ＝V Cp +V d Wherein V is d Is diode VD 1 、VD 2 Is connected with the pressure drop of the conducting tube. At this time, VD3 is not conducted due to back pressureThe rate device is in a steady state on state.
The forward crosstalk suppression phase corresponds to [ t ] of the operation timing sequence 0 -t 4 ]In the section, when the signal is turned off, the output voltage of the driving chip is reduced to 0V, and the resonance auxiliary circuit is turned on as shown in fig. 3 (a). Diode VD 2 From capacitor C p Back-pressure turn-off due to capacitance C p Far greater than the gate capacitance, the capacitance voltage is approximately unchanged during the turn-off. At this time, capacitor C q Negative pressure is provided for the grid electrode, so that the power device is rapidly turned off. At the same time through C q -L r -VD 3 Loop, capacitor C q Energy-wise inductance L of (2) r Transferring to gradually make the negative pressure reach zero. By setting its energy transfer time, a suitable negative pressure can be provided temporarily to attenuate the peak of the positive crosstalk when the positive crosstalk comes.
The reverse crosstalk suppression phase corresponds to [ t ] of the operation timing sequence 5 -t 7 ]In the section, as shown in fig. 3 (b), the resonance auxiliary circuit is turned on, along with the capacitance C q Energy-wise inductance L of (2) r Continuously transferring, capacitance C q The voltage is continuously reduced and is lower than that of the diode VD 1 Positive conduction voltage drop V of (2) d After that, VD 1 Conduction, under the clamping action of the diode, the capacitor C q Reverse voltage of voltage drop of one diode is born, and inductance passes through diode VD 1 、VD 3 Freewheels, and inductively releases energy. At the same time, the gate voltage is controlled by capacitor C q In parallel, by designing a capacitor C q Parasitic capacitance C far greater than power device gs The gate voltage can be clamped so as not to be turned on by mistake. In the case of reverse crosstalk, capacitor C q Positive-voltage slightly positive-voltage capacitor C for providing diode conduction voltage drop for grid electrode q The negative pressure peak can be well restrained, and the gate electrode of the power device is protected from breakdown.
Time sequence of operation [ t ] 7 -t 8 ]The next turn-on precharge phase is the interval, the resonance auxiliary circuit is turned on as shown in FIG. 3 (c), and the power supply voltage V of the driving chip GG Counter capacitor C p Charging to make the gate voltage rise to V Cp +V d . Simultaneous capacitance C q From loop V GG -C q -VD 2 -VD z Charging to prepare for the next turn-off, voltage stabilizing diode VD z Voltage of V z Capacitance C q The charge completion voltage is V Cq ＝V GG -V z -V d . So by choosing the appropriate zener diode VD z The regulated value may change the off negative pressure.
The resonance auxiliary circuit effectively inhibits forward crosstalk and reverse crosstalk voltage spikes in the high-speed switching process of the power device, prevents overvoltage risks caused by bridge arm crosstalk phenomenon on normal operation of the power converter, is composed of passive devices, does not need to input additional PWM signals, and has the advantages of being strong in anti-interference capability and easy to realize.
The technical means disclosed in the present utility model are not limited to the technical means disclosed in the above embodiments. It should be noted that modifications and adaptations to the utility model may occur to one skilled in the art without departing from the principles of the present utility model and are intended to be within the scope of the present utility model.
Claims (2)
1. A resonance auxiliary circuit for improving driving reliability of a power device is characterized in that: the resonance auxiliary circuit is arranged on a driving IC and a gate electrode driving resistor R of the power device g Between them;
the resonance auxiliary circuit comprises a resistor R q Resistance R p Capacitance C q Capacitance C p Diode VD 1 Diode VD 2 Diode VD 3 Voltage stabilizing tube VD z And inductance L r ；
The resistor R q Capacitance C q And diode VD 1 After being connected in parallel, one end is connected with the output end of the drive IC, and the other end is connected with the gate drive resistor R g Connecting; resistor R in parallel p And capacitor C p And voltage stabilizing tube VD z Connected in parallel with diode VD 2 Reverse series connection is connected into the gate driving resistor R g A branch; the electricity isSense of L r And diode VD 3 Is connected in parallel with the gate driving resistor R after being connected in series g A branch circuit, the resistor R p Capacitance C p Voltage stabilizing tube VD z And inductance L r Is connected to the reference potential point.
2. The resonant auxiliary circuit for improving driving reliability of a power device according to claim 1, wherein: the power device is silicon-based or silicon carbide-based IGBT, MOSFET and GaN.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322059401.1U CN220421666U (en) | 2023-08-02 | 2023-08-02 | Resonance auxiliary circuit for improving driving reliability of power device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322059401.1U CN220421666U (en) | 2023-08-02 | 2023-08-02 | Resonance auxiliary circuit for improving driving reliability of power device |
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| CN220421666U true CN220421666U (en) | 2024-01-30 |
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| CN202322059401.1U Active CN220421666U (en) | 2023-08-02 | 2023-08-02 | Resonance auxiliary circuit for improving driving reliability of power device |
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