CN219820874U - A barrier film and wafer subassembly for wafer production - Google Patents
A barrier film and wafer subassembly for wafer production Download PDFInfo
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- CN219820874U CN219820874U CN202321378725.5U CN202321378725U CN219820874U CN 219820874 U CN219820874 U CN 219820874U CN 202321378725 U CN202321378725 U CN 202321378725U CN 219820874 U CN219820874 U CN 219820874U
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- layer
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- wafer
- film layer
- isolating
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 230000004888 barrier function Effects 0.000 title claims description 10
- 230000000694 effects Effects 0.000 claims abstract description 12
- -1 polyethylene Polymers 0.000 claims abstract description 10
- 238000001125 extrusion Methods 0.000 claims abstract description 7
- 239000004743 Polypropylene Substances 0.000 claims abstract description 6
- 229920001155 polypropylene Polymers 0.000 claims abstract description 6
- 239000004698 Polyethylene Substances 0.000 claims abstract description 5
- 239000004793 Polystyrene Substances 0.000 claims abstract description 5
- 239000004417 polycarbonate Substances 0.000 claims abstract description 5
- 229920000515 polycarbonate Polymers 0.000 claims abstract description 5
- 229920000573 polyethylene Polymers 0.000 claims abstract description 5
- 229920002223 polystyrene Polymers 0.000 claims abstract description 4
- 239000006260 foam Substances 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 10
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 4
- 229920001684 low density polyethylene Polymers 0.000 claims description 4
- 239000004702 low-density polyethylene Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims 4
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 238000001179 sorption measurement Methods 0.000 abstract description 5
- 230000003139 buffering effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 56
- 230000003068 static effect Effects 0.000 description 5
- 239000012752 auxiliary agent Substances 0.000 description 3
- 238000010096 film blowing Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 241000446313 Lamella Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Packaging Frangible Articles (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
Abstract
The utility model particularly relates to an isolating film for wafer production and a wafer assembly, wherein the isolating film is of a three-layer co-extrusion structure and comprises a first film layer, an intermediate film layer and a second film layer which are sequentially arranged, the intermediate film layer is a polyethylene layer, a polypropylene layer, a polystyrene layer or a polycarbonate layer with an antistatic effect, and a three-dimensional dot lattice is uniformly arranged on the upper surface of the first film layer and the lower surface of the second film layer. The isolating film can be used as a direct contact isolating functional film of a wafer, is not easy to fall off scraps, plays a role in electrostatic protection, has certain stiffness, can ensure easy separation from the wafer, and can not generate electrostatic adsorption. Furthermore, when the isolating film is used for packaging the wafer assembly, the isolating film has a good buffering and shockproof effect, so that the wafer is not easy to collide and scratch in the packaging and transporting process.
Description
Technical Field
The utility model relates to the technical field of wafer production, in particular to an isolating film for wafer production and a wafer assembly.
Background
The existing paper/film used for producing the wafer and playing a role in isolation protection mainly comprises wafer isolation paper and a plastic isolation film with a single-layer structure, and for the wafer isolation paper, the defect is that the edge of the wafer isolation paper is easy to fuzzing and chip falling during cutting and forming, so that the wafer or a silicon wafer is polluted; for the plastic isolation film with a single-layer structure, the material is soft, and when a mechanical arm rapidly moves a product in the production process, the isolation film is not easy to peel due to the electrostatic adsorption effect. In addition, the surface of the plastic isolating film has unavoidable crystal points and small particles, and the risk of scratching products is also caused.
At present, most of the domestic wafer isolation paper is imported from abroad, and the product is high in price and incompletely matched with the functionality. Therefore, the utility model provides the isolating film and the wafer assembly for wafer production, which are used for improving the yield of semiconductor wafers in the production process and the packaging and transportation, effectively replacing imported DuPont paper and reducing the production cost.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the utility model aims to provide a separation film for wafer production and a wafer assembly.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a barrier film for wafer production, the barrier film is three-layer coextrusion structure, including first rete, intermediate lamella and the second rete that sets gradually, the intermediate lamella is polyethylene layer, polypropylene layer, polystyrene layer or the polycarbonate layer that have antistatic effect, the upper surface of first rete and the lower surface of second rete evenly are equipped with three-dimensional dot lattice.
Further, the three-dimensional dot matrix comprises a plurality of convex dots and a plurality of concave dots, the convex dots and the concave dots which are positioned on the first film layer or the second film layer are alternately arranged at intervals, the convex dots are formed by upwards protruding part of the area of the first film layer or downwards sinking part of the area of the second film layer, and the concave dots are formed by downwards sinking part of the area of the first film layer or upwards protruding part of the area of the second film layer.
Further, the first film layer and the second film layer are MPE layers, POE layers, LDPE layers or EVA layers with antistatic effect.
Further, the thickness ratio of the first film layer to the second film layer is 5:90:5.
Further, the cross section of the isolating membrane is circular.
The utility model also provides a wafer assembly comprising the isolating film for wafer production.
Further, the wafer subassembly is still including the bottom that is used for holding the wafer and be used for with the top cap that the bottom lid closed, mutually support and encapsulate between bottom and the top cap, the bottom in the bottom is provided with first foam pad, the inside wall of bottom encloses and is equipped with foam pad, the lower extreme of top cap is provided with the second foam pad, be provided with at least one wafer between first foam pad and the second foam pad, and two the barrier film laminating respectively sets up in the up end and the lower terminal surface of a wafer.
The utility model has the beneficial effects that: the utility model discloses an isolating film and a wafer assembly for wafer production, wherein the isolating film is of a three-layer co-extrusion structure, is obtained through structural design of a first film layer, an intermediate film layer and a second film layer, can be used as a direct contact isolating functional film of a wafer, is not easy to fall off scraps, plays a role in electrostatic protection, has a certain stiffness, and can ensure easy separation from the wafer and no electrostatic adsorption. Furthermore, when the isolating film is used for packaging the wafer assembly, the isolating film has a good buffering and shockproof effect, so that the wafer is not easy to collide and scratch in the packaging and transporting process. The two isolating films are respectively attached to the upper end face and the lower end face of the wafer, static electricity on the surface of the wafer can be absorbed in time, damage to the surface of the wafer caused by static electricity accumulation is prevented, and the isolating films have a three-dimensional dot lattice structure and a certain stiffness, so that the isolating films are easily separated from the wafer.
Drawings
Fig. 1 is a schematic structural view of a separator according to the present utility model.
Fig. 2 is a schematic cross-sectional structure of the separator according to the present utility model.
Fig. 3 is a schematic cross-sectional view of a wafer assembly according to the present utility model.
The reference numerals are: 1. a separation film; 101. a first film layer; 102. an intermediate film layer; 103. a second film layer; 104. a three-dimensional dot matrix; 2. a bottom cover; 3. a top cover; 4. a first foam pad; 5. a foam pad; 6. a second foam pad; 7. and (3) a wafer.
Detailed Description
The present utility model is further described below with reference to examples and figures 1-3, which are not intended to be limiting, for the purpose of facilitating understanding of those skilled in the art.
Example 1
As shown in fig. 1-2, the isolating film 1 is a three-layer co-extrusion structure, and comprises a first film layer 101, an intermediate film layer 102 and a second film layer 103 which are sequentially arranged, wherein the intermediate film layer 102 is a polyethylene layer, a polypropylene layer, a polystyrene layer or a polycarbonate layer with an antistatic effect, and the upper surface of the first film layer 101 and the lower surface of the second film layer 103 are uniformly provided with a stereoscopic dot matrix 104.
Further, the three-dimensional dot matrix 104 includes a plurality of convex dots and a plurality of concave dots, the convex dots and the concave dots on the first film layer or the second film layer are alternately arranged at intervals, the convex dots are formed by upwardly projecting part of the area of the first film layer or downwardly projecting part of the area of the second film layer, and the concave dots are formed by downwardly projecting part of the area of the first film layer or upwardly projecting part of the area of the second film layer.
Further, the first film layer 101 and the second film layer 103 are MPE layers, POE layers, LDPE layers or EVA layers with antistatic effect. Specifically, the antistatic effect in the first film layer 101, the intermediate film layer 102 and the second film layer 103 is obtained by adding a conductive carbon black auxiliary agent in the production process.
Further, the thickness ratio of the first film layer 101, the intermediate film layer 102 and the second film layer 103 is 5:90:5, respectively.
Further, the cross section of the isolating membrane 1 is circular.
In this embodiment, the middle film 102 has the characteristics of no chip drop, high temperature resistance, high stiffness and static resistance; the first film layer 101 and the second film layer 103 have the characteristics of antistatic adsorption and smooth surface, and good mechanical properties such as tearing strength and puncture strength, and can be directly contacted with a wafer during isolation protection without causing the problems of scratch and the like on the surface of the wafer. Furthermore, the upper surface and the lower surface of the isolating film 1 are both provided with a three-dimensional dot matrix 104, and the three-dimensional structural design of the three-dimensional dot matrix 104 ensures that the cut crystal grains of the wafer cannot be adsorbed or adhered on the isolating film 1; and the isolation film 1 with the three-dimensional dot matrix 104 has better buffering and shockproof properties, and solves the problem that the wafer is easy to collide in the packaging and transportation process. The isolating film 1 obtained through the structural design can be used as a direct contact isolating functional film of a wafer, is not easy to fall off scraps, plays a role in electrostatic protection, has a certain stiffness, can ensure that the isolating film is easily separated from the wafer, and does not generate electrostatic adsorption; in addition, the buffer and shockproof effects are achieved, and scratches or scratches are not easy to occur on the surface of the wafer.
The isolating film 1 is of a three-layer co-extrusion structure obtained by film blowing through a three-layer co-extrusion film blowing machine, at least one of MPE, POE, LDPE, EVA is adopted as a main raw material for synthesis processing by matching with a conductive carbon black auxiliary agent in each of the first film layer 101 and the second film layer 103, at least one of polyethylene (HDPE), polypropylene (PP), polystyrene (PS) or Polycarbonate (PC) is adopted as a main raw material for synthesis processing by matching with a conductive carbon black auxiliary agent in each of the middle film layer 102, and the materials are mixed according to a certain raw material proportion and then are put into an ABA three-layer co-extrusion film blowing machine, wherein the temperature of the section A is divided into seven areas, 150 ℃, 160 ℃, 170 ℃, 185 ℃, 180 ℃ and 180 ℃ are respectively set; the temperature of the B section is divided into seven areas, 160 ℃, 175 ℃, 185 ℃, 205 ℃, 180 ℃ and 180 ℃ are respectively set, a base film formed by laminating a first film layer and a second film layer in an intermediate film layer is obtained after cooling, and then the upper surface and the lower surface of the base film are pressed and shaped by adopting a precise die with a three-dimensional dot matrix 104, thus obtaining the isolating film 1.
Example 2
As shown in fig. 3, the present embodiment provides a wafer assembly including the isolation film 1 for wafer production described in embodiment 1 above.
Further, the wafer assembly further comprises a bottom cover 2 for accommodating the wafer 7 and a top cover 3 for covering the bottom cover 2, the bottom cover 2 and the top cover 3 are mutually matched and packaged, a first foam pad 4 is arranged at the bottom in the bottom cover 2, a foam pad 5 is arranged on the inner side wall of the bottom cover 2 in a surrounding mode, a second foam pad 6 is arranged at the lower end of the top cover 3, at least one wafer 7 is arranged between the first foam pad 4 and the second foam pad 6, and the two isolation films 1 are respectively attached to the upper end face and the lower end face of one wafer 7.
The wafer assembly obtained through the structure is well packaged, and meanwhile, the wafer assembly has a good buffering and shockproof function, so that the wafer is not easy to collide and scratch in the packaging and transporting process. Wherein, two barrier films 1 laminate respectively in the up end and the lower terminal surface of wafer 7, can in time absorb the static on wafer 7 surface, prevent that static from accumulating and causing the damage to wafer 7 surface, and barrier film 1 has three-dimensional dot lattice 104 structure and certain deflection, makes barrier film 1 and wafer 7 easily separate.
The above embodiments are preferred embodiments of the present utility model, and besides, the present utility model may be implemented in other ways, and any obvious substitution is within the scope of the present utility model without departing from the concept of the present utility model.
Claims (7)
1. A barrier film for wafer production, characterized in that: the isolation film is of a three-layer co-extrusion structure and comprises a first film layer, an intermediate film layer and a second film layer which are sequentially arranged, wherein the intermediate film layer is a polyethylene layer, a polypropylene layer, a polystyrene layer or a polycarbonate layer with an antistatic effect, and the upper surface of the first film layer and the lower surface of the second film layer are uniformly provided with a three-dimensional dot matrix.
2. A spacer film for wafer production according to claim 1, wherein: the three-dimensional dot matrix comprises a plurality of convex dots and a plurality of concave dots, the convex dots and the concave dots which are positioned on the first film layer or the second film layer are alternately arranged at intervals, the convex dots are formed by upwards protruding part of the area of the first film layer or downwards sinking part of the area of the second film layer, and the concave dots are formed by downwards sinking part of the area of the first film layer or upwards protruding part of the area of the second film layer.
3. A spacer film for wafer production according to claim 1, wherein: the first film layer and the second film layer are respectively an MPE layer, a POE layer, an LDPE layer or an EVA layer with antistatic effect.
4. A spacer film for wafer production according to claim 1, wherein: the thickness ratio of the first film layer to the second film layer is 5:90:5.
5. A spacer film for wafer production according to claim 1, wherein: the cross section of the isolating membrane is circular.
6. A wafer assembly, characterized in that: comprising a release film for wafer production according to any one of claims 1 to 5.
7. The wafer assembly of claim 6, wherein: still including the bottom that is used for holding the wafer and be used for with the top cap that the bottom lid closed, mutually support and encapsulate between bottom and the top cap, the bottom in the bottom is provided with first foam pad, the inside wall of bottom encloses and is equipped with foam pad, the lower extreme of top cap is provided with the second foam pad, be provided with at least one wafer between first foam pad and the second foam pad, and two the barrier film laminating respectively sets up in the up end and the lower terminal surface of a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321378725.5U CN219820874U (en) | 2023-05-31 | 2023-05-31 | A barrier film and wafer subassembly for wafer production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321378725.5U CN219820874U (en) | 2023-05-31 | 2023-05-31 | A barrier film and wafer subassembly for wafer production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219820874U true CN219820874U (en) | 2023-10-13 |
Family
ID=88281949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321378725.5U Active CN219820874U (en) | 2023-05-31 | 2023-05-31 | A barrier film and wafer subassembly for wafer production |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219820874U (en) |
-
2023
- 2023-05-31 CN CN202321378725.5U patent/CN219820874U/en active Active
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