CN219568049U - Chemical vapor deposition furnace - Google Patents
Chemical vapor deposition furnace Download PDFInfo
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- CN219568049U CN219568049U CN202320097104.3U CN202320097104U CN219568049U CN 219568049 U CN219568049 U CN 219568049U CN 202320097104 U CN202320097104 U CN 202320097104U CN 219568049 U CN219568049 U CN 219568049U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The utility model provides a chemical vapor deposition furnace, comprising: the furnace body is provided with a reaction cavity, and the reaction cavity is provided with an arc-shaped inner wall; the air inlet device comprises an air inlet pipeline and an air inlet part, one end of the air inlet pipeline is provided with an air outlet, the air outlet is communicated with the bottom of the reaction cavity, the air inlet part is communicated with the other end of the air inlet pipeline, and the direction of the air outlet faces the arc-shaped inner wall; the feeding device is communicated with the air inlet pipeline, and the air inlet part is used for blowing powder materials into the bottom of the reaction cavity; the exhaust device comprises a gas-solid separator and an exhaust part, the exhaust part is communicated with the top of the reaction cavity, the gas-solid separator is positioned at an air inlet of the exhaust part, and the exhaust part is used for exhausting the gas after the separation of the gas-solid separator is completed; the discharging device is communicated with the bottom of the reaction cavity and is used for collecting powder materials after the gas-solid separator is separated. Through the scheme, the problem that a chemical vapor deposition furnace in the prior art has poor powder material deposition effect can be solved.
Description
Technical Field
The utility model relates to the technical field of deposition furnaces, in particular to a chemical vapor deposition furnace.
Background
Chemical vapor deposition (Chemical Vapor Deposition, CVD) is a new technology developed in recent years, and generally uses one or more precursor gases containing specific elements, and the process of cracking under high temperature or other conditions to rearrange the deposition of the specific elements is performed. The preparation of graphene or coated carbon material generally utilizes a vapor deposition method to deposit carbon atoms generated by pyrolysis on the surface of the material by using gas carbon sources such as methane, ethylene, acetylene and the like at high temperature (the temperature is generally 750-1150 ℃) to form a film of graphene or carbon material, and carrier gas in a reaction system is reducing gas H 2 Or a protective gas Ar or N 2 The same applies to the preparation of silicon materials by cracking with corresponding silicon-containing precursor gases.
The chemical vapor deposition furnace is generally in a vertical cylinder shape, is charged from the bottom end or the side end, and is discharged from the other end of the tail gas after gas pyrolysis deposition, so that the chemical vapor deposition furnace is mainly suitable for solid materials with a certain shape. And is suitable for powder materials, typically rotary deposition furnaces. The rotary deposition furnace has low deposition efficiency due to the fact that the powder material is placed at the horizontal cylindrical furnace bottom and has small contact area with the precursor gas, long deposition time is needed, energy is wasted, and meanwhile, the powder material is insufficiently contacted with the precursor gas, so that the deposition effect is uneven; and because the powder materials in the rotary deposition furnace are concentrated together, agglomeration is easy to occur, and the deposition effect is poorer.
Disclosure of Invention
The utility model provides a chemical vapor deposition furnace, which aims to solve the problem that the chemical vapor deposition furnace in the prior art has poor effect on powder material deposition.
In order to solve the above problems, the present utility model provides a chemical vapor deposition furnace comprising: the furnace body is provided with a reaction cavity, and the reaction cavity is provided with an arc-shaped inner wall; the air inlet device comprises an air inlet pipeline and an air inlet part, one end of the air inlet pipeline is provided with an air outlet, the air outlet is communicated with the bottom of the reaction cavity, the air inlet part is communicated with the other end of the air inlet pipeline, and the direction of the air outlet faces the arc-shaped inner wall; the feeding device is communicated with the air inlet pipeline, and the air inlet part is used for blowing powder materials in the feeding device into the bottom of the reaction cavity; the exhaust device comprises a gas-solid separator and an exhaust part, the exhaust part is communicated with the top of the reaction cavity, the gas-solid separator is arranged at the top of the reaction cavity and is positioned at an air inlet of the exhaust part, the gas-solid separator is used for separating gas and powder materials entering the reaction cavity, and the exhaust part is used for exhausting the gas after the separation of the gas-solid separator is completed; the discharging device is communicated with the bottom of the reaction cavity and is used for collecting powder materials after the gas-solid separator is separated.
Further, the air inlet part comprises a precursor air pipeline, a carrier air pipeline and a gas mixer, one end of the gas mixer is communicated with one end of the air inlet pipeline, and the other end of the gas mixer is communicated with the precursor air pipeline and the carrier air pipeline.
Further, the air inlet device further comprises a back-blowing pipeline which is communicated with the discharging device, and the back-blowing pipeline is used for back-blowing the small particle powder materials entering the discharging device.
Further, feed arrangement includes the feeding storehouse and sets up the guide structure at the discharge gate in feeding storehouse, and the feeding storehouse is used for holding powder material, and guide structure is used for controlling the guide rate of powder material in the feeding storehouse.
Further, the guide structure comprises a guide wheel, a first blanking guide wheel, a second blanking guide wheel, a first driving part, a second driving part and a third driving part, wherein the first blanking guide wheel and the second blanking guide wheel are arranged side by side and are positioned below the guide wheel, the diameter of the guide wheel is larger than that of the first blanking guide wheel and that of the second blanking guide wheel, the first driving part is in driving connection with the guide wheel, the second driving part is in driving connection with the first blanking guide wheel, and the third driving part is in driving connection with the second blanking guide wheel.
Further, the turning directions of the first blanking guide wheel and the second blanking guide wheel are opposite, and the turning direction of the first blanking guide wheel is away from the second blanking guide wheel.
Further, the exhaust portion includes exhaust pipe, net formula filter, first cooling system, cotton formula filter and vacuum pump, exhaust pipe one end and reaction chamber's top intercommunication, exhaust pipe other end and external system intercommunication, gas-solid separator is located exhaust pipe's air inlet department, net formula filter installs in exhaust pipe's air inlet department, first cooling system parcel is lived exhaust pipe's outer wall, cotton formula filter sets up in exhaust pipe, cotton formula filter is used for filtering the gas after the cooling of first cooling system, vacuum pump and exhaust pipe's the other end intercommunication, the vacuum pump is used for evacuating the reaction chamber.
Further, discharging device includes the discharging pipe, collects storehouse, control valve and second cooling system, and the one end of discharging pipe and the bottom intercommunication of reaction chamber, the other end of discharging pipe and the intercommunication of collection storehouse, and the control valve sets up on the discharging pipe, and the control valve is used for controlling the discharging pipe and collects the break-make in storehouse, and through the aperture of adjusting control valve to adjust the discharging rate of discharging pipe and collection storehouse, the outer wall of discharging pipe is lived in the second cooling system parcel.
Further, the shape of the furnace body is a disc or a cylinder, a chemical reaction zone, a separation zone and a buffer fall-back zone are distributed along the inner wall of the reaction cavity in a surrounding manner in sequence, gas discharged by the gas mixer sequentially passes through the chemical reaction zone, the separation zone and the buffer fall-back zone after entering the reaction cavity, the chemical reaction zone is used for carrying out gas inlet chemical reaction on powder materials and gas discharged by the gas mixer, the separation zone is used for separating the gas leaving the chemical reaction zone from the powder materials after the reaction is completed, and the buffer fall-back zone is used for collecting the powder materials after the separation zone is separated from the separation zone.
Further, the chemical vapor deposition furnace further comprises a heat preservation reflecting layer, a tubular cooling system and a heating temperature control system, wherein the heating temperature control system is arranged on the reaction cavity and is positioned on one side of the arc-shaped inner wall, the heat preservation reflecting layer is coated on the outer side of the heating temperature control system, the tubular cooling system is arranged outside the heat preservation reflecting layer and is used for cooling the furnace body, and the separated powder material is subjected to primary cooling; the heating temperature control system is used for heating and controlling the temperature of the reaction cavity.
By applying the technical scheme of the utility model, the chemical vapor deposition furnace comprises: the furnace body is provided with a reaction cavity, and the reaction cavity is provided with an arc-shaped inner wall; the air inlet device comprises an air inlet pipeline and an air inlet part, one end of the air inlet pipeline is provided with an air outlet, the air outlet is communicated with the bottom of the reaction cavity, the air inlet part is communicated with the other end of the air inlet pipeline, and the direction of the air outlet faces the arc-shaped inner wall; the feeding device is communicated with the air inlet pipeline, and the air inlet part is used for blowing powder materials in the feeding device into the bottom of the reaction cavity; the exhaust device comprises a gas-solid separator and an exhaust part, the exhaust part is communicated with the top of the reaction cavity, the gas-solid separator is arranged at the top of the reaction cavity and is positioned at an air inlet of the exhaust part, the gas-solid separator is used for separating gas and powder materials entering the reaction cavity, and the exhaust part is used for exhausting the gas after the separation of the gas-solid separator is completed; the discharging device is communicated with the bottom of the reaction cavity and is used for collecting powder materials after the gas-solid separator is separated. By adopting the scheme, the powder material in the feeding device is blown into the bottom of the reaction cavity through the air inlet part, and the arrangement mode can increase the contact area between the gas in the air inlet part and the powder material, so that the reaction effect and the deposition efficiency are improved. The reaction cavity is provided with an arc-shaped inner wall, the direction of the air outlet faces the arc-shaped inner wall, so that powder materials to be processed can be uniformly deposited in the reaction cavity and move along the arc surface, and the problem that the powder materials are agglomerated and the deposition effect of the chemical vapor deposition furnace is poor is further avoided. Wherein the powder material is graphite material or silicon oxide.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model. In the drawings:
FIG. 1 shows a cross-sectional view of a chemical vapor deposition furnace provided by an embodiment of the present utility model;
fig. 2 shows a schematic structural diagram of the guide wheel, the first blanking guide wheel and the second blanking guide wheel in fig. 1.
Wherein the above figures include the following reference numerals:
10. a furnace body; 11. a reaction chamber; 111. a chemical reaction zone; 112. a separation zone; 113. buffering the drop-back area;
20. an air intake device; 21. an air intake line; 22. an air inlet part; 221. a precursor gas line; 222. a carrier gas line; 223. a gas mixer; 23. a reverse blowing pipeline;
30. a feeding device; 31. a feeding bin; 32. a material guiding structure; 321. a material guiding wheel; 322. the first blanking guide wheel; 323. a second blanking guide wheel;
40. an exhaust device; 41. a gas-solid separator; 42. an exhaust unit; 421. an exhaust line; 422. a mesh filter; 423. a first cooling system; 424. a cotton filter; 425. a vacuum pump;
50. a discharging device; 51. a discharge pipe; 52. a collecting bin; 53. a control valve; 54. a second cooling system;
61. a heat-insulating reflective layer; 62. a tube cooling system; 63. and heating the temperature control system.
Detailed Description
The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. It will be apparent that the described embodiments are only some, but not all, embodiments of the utility model. The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the utility model, its application, or uses. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
As shown in fig. 1 and 2, an embodiment of the present utility model provides a chemical vapor deposition furnace including: the furnace body 10 is provided with a reaction cavity 11, and the reaction cavity 11 is provided with an arc-shaped inner wall; the air inlet device 20, the air inlet device 20 comprises an air inlet pipeline 21 and an air inlet part 22, one end of the air inlet pipeline 21 is provided with an air outlet, the air outlet is communicated with the bottom of the reaction cavity 11, the air inlet part 22 is communicated with the other end of the air inlet pipeline 21, and the direction of the air outlet faces the arc-shaped inner wall; the feeding device 30, the feeding device 30 is communicated with the air inlet pipeline 21, and the air inlet part 22 is used for blowing powder materials in the feeding device 30 into the bottom of the reaction cavity 11; the exhaust device 40, the exhaust device 40 includes a gas-solid separator 41 and an exhaust part 42, the exhaust part 42 is communicated with the top of the reaction chamber 11, the gas-solid separator 41 is arranged at the top of the reaction chamber 11 and is positioned at the gas inlet of the exhaust part 42, the gas-solid separator 41 is used for separating the gas and the powder material entering the reaction chamber 11, and the exhaust part 42 is used for exhausting the gas separated by the gas-solid separator 41; the discharging device 50 is communicated with the bottom of the reaction cavity 11, and the discharging device 50 is used for collecting the powder materials after the separation of the gas-solid separator 41.
By adopting the scheme, the powder material in the feeding device 30 is blown into the bottom of the reaction cavity 11 through the air inlet part 22, and the arrangement mode can increase the contact area between the gas in the air inlet part 22 and the powder material, so that the reaction effect and the deposition efficiency are improved. And the reaction chamber 11 is provided with an arc-shaped inner wall, and the direction of the air outlet faces the arc-shaped inner wall, so that powder materials to be processed can be uniformly deposited in the reaction chamber 11 and move along the arc surface, and the problem that the powder materials are agglomerated and the deposition effect of the chemical vapor deposition furnace is poor is further avoided.
The air inlet 22 includes a precursor air line 221, a carrier air line 222, and a gas mixer 223, wherein one end of the gas mixer 223 is communicated with one end of the air inlet line 21, and the other end of the gas mixer 223 is communicated with both the precursor air line 221 and the carrier air line 222.
The precursor gas and the carrier gas respectively enter the gas mixer 223 through the precursor gas pipeline 221 and the carrier gas pipeline 222, and the precursor gas and the carrier gas are mixed by the gas mixer 223 to form the gas discharged by the gas mixer 223, so that the gas concentration of the precursor gas can be reduced, and the safety during reaction is ensured; the gas discharged through the gas mixer 223 reacts with the powder material in the feeder apparatus 30 and adheres to the powder material. Among them, the precursor gas may be a gas containing a specific element such as silicon, carbon, boron, or the like, preferably a gas containing a carbon element, and further, a gas containing carbon, hydrogen, but no oxygen element such as methane, ethylene, acetylene, or the like. The carrier gas is nitrogen, argon or other conventional inert gases.
In this embodiment, the air inlet device 20 further includes a blowback air pipe 23, where the blowback air pipe 23 is communicated with the discharge device 50, and the blowback air pipe 23 is used for blowback of the small particle powder material entering the discharge device 50.
By providing the anti-blowing pipe 23, when the small particle powder material enters the discharging device 50, the small particle powder material can be blown into the reaction chamber 11 through the anti-blowing pipe 23, so that the reaction of the gas discharged from the gas mixer 223 is continued until the required particle size of the powder material is reached, and then the powder material enters the discharging device 50.
Specifically, the feeding device 30 comprises a feeding bin 31 and a material guiding structure 32 arranged at a discharge hole of the feeding bin 31, the feeding bin 31 is used for containing powder materials, and the material guiding structure 32 is used for controlling the material guiding rate of the powder materials in the feeding bin 31.
The material guiding structure 32 is arranged at the discharge hole of the feeding bin 31, so that the material guiding speed of the powder material in the feeding bin 31 can be controlled through the material guiding structure 32, and the speed and effect of the reaction are controlled.
The guide structure 32 includes a guide wheel 321, a first blanking guide wheel 322, a second blanking guide wheel 323, a first driving portion, a second driving portion and a third driving portion, where the first blanking guide wheel 322 and the second blanking guide wheel 323 are arranged side by side and located below the guide wheel 321, the diameter of the guide wheel 321 is greater than that of the first blanking guide wheel 322 and the second blanking guide wheel 323, the first driving portion is in driving connection with the guide wheel 321, the second driving portion is in driving connection with the first blanking guide wheel 322, and the third driving portion is in driving connection with the second blanking guide wheel 323.
By adopting the arrangement mode, the first driving part can drive the rotation speed of the material guiding wheel 321, so as to control the material guiding speed of the powder material in the feeding bin 31; and the second driving part drives the first blanking guide wheel 322 to rotate, and the third driving part drives the second blanking guide wheel 323 to rotate, so that the material guiding rate of the powder material falling from the material guiding wheel 321 is further controlled.
Further, the turning directions of the first and second discharging guide wheels 322 and 323 are opposite, and the turning direction of the first discharging guide wheel 322 is away from the second discharging guide wheel 323. The turning directions of the first blanking guide wheel 322 and the second blanking guide wheel 323 are set to be opposite, and the turning direction of the first blanking guide wheel 322 deviates from the second blanking guide wheel 323, so that the agglomeration of the extruded powder material can be avoided. Wherein the powder material is graphite material or silicon oxide.
In this embodiment, the exhaust portion 42 includes an exhaust pipe 421, a mesh filter 422, a first cooling system 423, a cotton filter 424, and a vacuum pump 425, one end of the exhaust pipe 421 is communicated with the top of the reaction chamber 11, the other end of the exhaust pipe 421 is communicated with an external system, the gas-solid separator 41 is located at the gas inlet of the exhaust pipe 421, the mesh filter 422 is installed at the gas inlet of the exhaust pipe 421, the first cooling system 423 wraps the outer wall of the exhaust pipe 421, the cotton filter 424 is disposed in the exhaust pipe 421, the cotton filter 424 is used for filtering the gas cooled by the first cooling system 423, the vacuum pump 425 is communicated with the other end of the exhaust pipe 421, and the vacuum pump 425 is used for evacuating the reaction chamber 11.
The mesh filter 422 is installed at the gas inlet of the exhaust line 421, so that the gas containing the powder material can be filtered once; the first cooling system 423 wraps the outer wall of the exhaust pipeline 421, so that the gas with higher temperature can be cooled; a cotton filter 424 is provided in the exhaust line 421 so that the gas cooled by the first cooling system 423 can be secondarily filtered; by providing the vacuum pump 425, the reaction chamber 11 can be evacuated.
In this embodiment, the discharging device 50 includes a discharging pipe 51, a collecting bin 52, a control valve 53 and a second cooling system 54, one end of the discharging pipe 51 is communicated with the bottom of the reaction chamber 11, the other end of the discharging pipe 51 is communicated with the collecting bin 52, the control valve 53 is disposed on the discharging pipe 51, the control valve 53 is used for controlling on-off of the discharging pipe 51 and the collecting bin 52, and the opening of the control valve 53 is adjusted to adjust the discharging rate of the discharging pipe 51 and the collecting bin 52, and the second cooling system 54 wraps the outer wall of the discharging pipe 51.
The control valve 53 is arranged, so that the on-off of the discharging pipe 51 and the collecting bin 52 can be controlled according to actual needs, and the discharging rate of the discharging pipe 51 and the collecting bin 52 can be adjusted by adjusting the opening of the control valve 53; the provision of the second cooling system 54 can cool the high-temperature powder material after the completion of the reaction and prevent the occurrence of air pressure problems resulting in a large amount of powder material rushing into the outlet.
Wherein, the furnace body 10 is in the shape of a disc or a cylinder, the chemical reaction zone 111, the separation zone 112 and the buffer fall-back zone 113 are sequentially distributed along the inner wall of the reaction chamber 11, the gas discharged from the gas mixer 223 sequentially passes through the chemical reaction zone 111, the separation zone 112 and the buffer fall-back zone 113 after entering the reaction chamber 11, the chemical reaction zone 111 is used for the gas discharged from the powder material and the gas mixer 223 to enter the chemical reaction, the separation zone 112 is used for separating the gas leaving the chemical reaction zone 111 from the powder material after the reaction is completed, and the buffer fall-back zone 113 is used for collecting the powder material after the separation from the separation zone 112 is completed. By the arrangement, agglomeration of powder materials can be effectively avoided, and the problem that a chemical vapor deposition furnace in the prior art is poor in deposition effect is effectively solved.
Specifically, the chemical vapor deposition furnace further comprises a heat-preserving reflective layer 61, a tubular cooling system 62 and a heating temperature control system 63, wherein the heating temperature control system 63 is arranged on the reaction cavity 11 and is positioned on one side of the arc-shaped inner wall, the heat-preserving reflective layer 61 is coated on the outer side of the heating temperature control system 63, the tubular cooling system 62 is arranged outside the heat-preserving reflective layer 61, the tubular cooling system 62 is used for cooling the furnace body 10, and the separated powder material is primarily cooled; the heating temperature control system 63 is used for heating and controlling the temperature of the reaction chamber 11.
The heat preservation reflecting layer 61 is arranged, so that the heat preservation effect can be achieved; because the operation temperature of the chemical vapor deposition furnace is about 900 ℃, the structure of the furnace body 10 is unstable at the temperature, and in order to prevent the furnace body 10 from being burnt or oxidized, a tubular cooling system 62 is arranged, so that the furnace body 10 can be cooled and protected, and the separated powder material can be primarily cooled; the heating temperature control system 63 is provided on the reaction chamber 11 at one side of the arc-shaped inner wall, so that a heating effect can be achieved, and chemical reaction between the gas discharged from the gas mixer 223 and the powder material can be performed.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. A chemical vapor deposition furnace, comprising:
the furnace body (10) is provided with a reaction cavity (11), and the reaction cavity (11) is provided with an arc-shaped inner wall;
the air inlet device (20), the air inlet device (20) comprises an air inlet pipeline (21) and an air inlet part (22), one end of the air inlet pipeline (21) is provided with an air outlet, the air outlet is communicated with the bottom of the reaction cavity (11), the air inlet part (22) is communicated with the other end of the air inlet pipeline (21), and the direction of the air outlet faces the arc-shaped inner wall;
the feeding device (30) is communicated with the air inlet pipeline (21), and the air inlet part (22) is used for blowing powder materials in the feeding device (30) into the bottom of the reaction cavity (11);
the exhaust device (40), the exhaust device (40) comprises a gas-solid separator (41) and an exhaust part (42), the exhaust part (42) is communicated with the top of the reaction cavity (11), the gas-solid separator (41) is arranged at the top of the reaction cavity (11) and is positioned at the air inlet of the exhaust part (42), the gas-solid separator (41) is used for separating gas and powder materials entering the reaction cavity (11), and the exhaust part (42) is used for exhausting the gas separated by the gas-solid separator (41);
the discharging device (50) is communicated with the bottom of the reaction cavity (11), and the discharging device (50) is used for collecting powder materials after the gas-solid separator (41) is separated.
2. The chemical vapor deposition furnace according to claim 1, wherein the gas inlet portion (22) includes a precursor gas line (221), a carrier gas line (222), and a gas mixer (223), one end of the gas mixer (223) is communicated with one end of the gas inlet line (21), and the other end of the gas mixer (223) is communicated with both the precursor gas line (221) and the carrier gas line (222).
3. The chemical vapor deposition furnace according to claim 1, wherein the air inlet device (20) further comprises a back-blowing air pipeline (23), the back-blowing air pipeline (23) is communicated with the discharging device (50), and the back-blowing air pipeline (23) is used for back-blowing small particle powder materials entering the discharging device (50).
4. The chemical vapor deposition furnace according to claim 1, wherein the feeding device (30) comprises a feeding bin (31) and a material guiding structure (32) arranged at a discharge hole of the feeding bin (31), the feeding bin (31) is used for containing powder materials, and the material guiding structure (32) is used for controlling the material guiding rate of the powder materials in the feeding bin (31).
5. The chemical vapor deposition furnace according to claim 4, wherein the material guiding structure (32) comprises a material guiding wheel (321), a first material guiding wheel (322), a second material guiding wheel (323), a first driving part, a second driving part and a third driving part, wherein the first material guiding wheel (322) and the second material guiding wheel (323) are arranged side by side and are positioned below the material guiding wheel (321), the diameter of the material guiding wheel (321) is larger than the diameters of the first material guiding wheel (322) and the second material guiding wheel (323), the first driving part and the material guiding wheel (321) are in driving connection, the second driving part and the first material guiding wheel (322) are in driving connection, and the third driving part and the second material guiding wheel (323) are in driving connection.
6. The chemical vapor deposition furnace according to claim 5, wherein the direction of rotation of the first and second blanking guide wheels (322, 323) is opposite, and the direction of rotation of the first blanking guide wheel (322) is away from the second blanking guide wheel (323).
7. The chemical vapor deposition furnace according to claim 1, wherein the exhaust portion (42) comprises an exhaust pipe (421), a mesh filter (422), a first cooling system (423), a cotton filter (424) and a vacuum pump (425), one end of the exhaust pipe (421) is communicated with the top of the reaction chamber (11), the other end of the exhaust pipe (421) is communicated with an external system, the gas-solid separator (41) is located at an air inlet of the exhaust pipe (421), the mesh filter (422) is installed at the air inlet of the exhaust pipe (421), the first cooling system (423) wraps the outer wall of the exhaust pipe (421), the cotton filter (424) is arranged in the exhaust pipe (421), the cotton filter (424) is used for filtering the gas cooled by the first cooling system (423), the vacuum pump (425) is communicated with the other end of the exhaust pipe (421), and the vacuum pump (425) is used for vacuumizing the reaction chamber (11).
8. The chemical vapor deposition furnace according to claim 1, wherein the discharging device (50) comprises a discharging pipe (51), a collecting bin (52), a control valve (53) and a second cooling system (54), one end of the discharging pipe (51) is communicated with the bottom of the reaction chamber (11), the other end of the discharging pipe (51) is communicated with the collecting bin (52), the control valve (53) is arranged on the discharging pipe (51), the control valve (53) is used for controlling the on-off of the discharging pipe (51) and the collecting bin (52), and the discharging rate of the discharging pipe (51) and the collecting bin (52) is regulated by regulating the opening of the control valve (53), and the second cooling system (54) wraps the outer wall of the discharging pipe (51).
9. The chemical vapor deposition furnace according to claim 2, wherein the furnace body (10) is in a disc or cylinder shape, a chemical reaction zone (111), a separation zone (112) and a buffer drop zone (113) are sequentially distributed around the inner wall of the reaction chamber (11), gas discharged from the gas mixer (223) enters the reaction chamber (11) and sequentially passes through the chemical reaction zone (111), the separation zone (112) and the buffer drop zone (113), the chemical reaction zone (111) is used for performing chemical reaction on powder materials and gas discharged from the gas mixer (223), the separation zone (112) is used for separating the gas leaving the chemical reaction zone (111) from the powder materials after the reaction is completed, and the buffer drop zone (113) is used for collecting the powder materials after the separation from the separation zone (112) is completed.
10. The chemical vapor deposition furnace according to claim 1, further comprising a heat-preserving reflective layer (61), a tubular cooling system (62) and a heating temperature control system (63), wherein the heating temperature control system (63) is arranged on the reaction chamber (11) and is positioned on one side of the arc-shaped inner wall, the heat-preserving reflective layer (61) is coated on the outer side of the heating temperature control system (63), the tubular cooling system (62) is arranged outside the heat-preserving reflective layer (61), the tubular cooling system (62) is used for cooling the furnace body (10), and the separated powder material is primarily cooled; the heating temperature control system (63) is used for heating and controlling the temperature of the reaction cavity (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320097104.3U CN219568049U (en) | 2023-02-01 | 2023-02-01 | Chemical vapor deposition furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320097104.3U CN219568049U (en) | 2023-02-01 | 2023-02-01 | Chemical vapor deposition furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219568049U true CN219568049U (en) | 2023-08-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320097104.3U Active CN219568049U (en) | 2023-02-01 | 2023-02-01 | Chemical vapor deposition furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219568049U (en) |
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2023
- 2023-02-01 CN CN202320097104.3U patent/CN219568049U/en active Active
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