CN2195551Y - Multi-function omnibearing reinforcing gravity pouring ion-filling machine - Google Patents
Multi-function omnibearing reinforcing gravity pouring ion-filling machine Download PDFInfo
- Publication number
- CN2195551Y CN2195551Y CN 94218387 CN94218387U CN2195551Y CN 2195551 Y CN2195551 Y CN 2195551Y CN 94218387 CN94218387 CN 94218387 CN 94218387 U CN94218387 U CN 94218387U CN 2195551 Y CN2195551 Y CN 2195551Y
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- vacuum
- chamber
- plasma
- chamber wall
- power supply
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 94218387 CN2195551Y (en) | 1994-08-15 | 1994-08-15 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 94218387 CN2195551Y (en) | 1994-08-15 | 1994-08-15 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
Publications (1)
Publication Number | Publication Date |
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CN2195551Y true CN2195551Y (en) | 1995-04-26 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 94218387 Expired - Fee Related CN2195551Y (en) | 1994-08-15 | 1994-08-15 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
Country Status (1)
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CN (1) | CN2195551Y (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100408720C (en) * | 2005-10-31 | 2008-08-06 | 哈尔滨工业大学 | Method for implementing plasma temp-rising injection penetration and device thereof |
CN100560786C (en) * | 2006-06-02 | 2009-11-18 | 鸿富锦精密工业(深圳)有限公司 | Sputtering apparatus and jet-plating method |
CN101045989B (en) * | 2007-04-30 | 2010-09-29 | 大连理工大学 | Low energy ion implanter based on great area DC pulse plasma |
CN101886248A (en) * | 2009-05-15 | 2010-11-17 | 鸿富锦精密工业(深圳)有限公司 | Sputtering coating device |
CN102246271A (en) * | 2008-12-12 | 2011-11-16 | 富士胶片株式会社 | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
CN102345108A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | 300KEV energy probe specially used for ion implanter |
CN104561910A (en) * | 2015-01-27 | 2015-04-29 | 大连理工常州研究院有限公司 | Plasma enhanced arc ion plating equipment and method for preparing precision coating |
CN107400855A (en) * | 2016-05-18 | 2017-11-28 | 今钛科技股份有限公司 | Film forming apparatus and method |
CN112530606A (en) * | 2020-11-11 | 2021-03-19 | 核工业西南物理研究院 | Automatic impurity gas accelerated mixing system and gas accelerated mixing control method |
-
1994
- 1994-08-15 CN CN 94218387 patent/CN2195551Y/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100408720C (en) * | 2005-10-31 | 2008-08-06 | 哈尔滨工业大学 | Method for implementing plasma temp-rising injection penetration and device thereof |
CN100560786C (en) * | 2006-06-02 | 2009-11-18 | 鸿富锦精密工业(深圳)有限公司 | Sputtering apparatus and jet-plating method |
CN101045989B (en) * | 2007-04-30 | 2010-09-29 | 大连理工大学 | Low energy ion implanter based on great area DC pulse plasma |
CN102246271A (en) * | 2008-12-12 | 2011-11-16 | 富士胶片株式会社 | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
CN102246271B (en) * | 2008-12-12 | 2013-08-07 | 富士胶片株式会社 | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
CN101886248A (en) * | 2009-05-15 | 2010-11-17 | 鸿富锦精密工业(深圳)有限公司 | Sputtering coating device |
CN101886248B (en) * | 2009-05-15 | 2013-08-21 | 鸿富锦精密工业(深圳)有限公司 | Sputtering coating device |
CN102345108A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | 300KEV energy probe specially used for ion implanter |
CN104561910A (en) * | 2015-01-27 | 2015-04-29 | 大连理工常州研究院有限公司 | Plasma enhanced arc ion plating equipment and method for preparing precision coating |
CN107400855A (en) * | 2016-05-18 | 2017-11-28 | 今钛科技股份有限公司 | Film forming apparatus and method |
CN112530606A (en) * | 2020-11-11 | 2021-03-19 | 核工业西南物理研究院 | Automatic impurity gas accelerated mixing system and gas accelerated mixing control method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C53 | Correction of patent for invention or patent application | ||
CB03 | Change of inventor or designer information |
Designer after: Shang Zhenkui Designer after: Chen Kaiqin Designer after: Zeng Xuchu Designer after: Wang Huisan Designer before: Shang Zhenkui Designer before: Chen Shengqin Designer before: Zeng Xuchu Designer before: Wang Huisan |
|
COR | Change of bibliographic data |
Free format text: CORRECT: DESIGNER; FROM: SHANG ZHENKUI; CHEN SHENGQIN; ZENG XUCHU; WANG HUISAN TO: SHANG ZHENKUI; CHEN KAIQIN; ZENG XUCHU; WANG HUISAN |
|
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |