CN219514047U - Radio frequency power amplifier and radio frequency power amplifier module - Google Patents
Radio frequency power amplifier and radio frequency power amplifier module Download PDFInfo
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- CN219514047U CN219514047U CN202320519970.7U CN202320519970U CN219514047U CN 219514047 U CN219514047 U CN 219514047U CN 202320519970 U CN202320519970 U CN 202320519970U CN 219514047 U CN219514047 U CN 219514047U
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- power amplifier
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- frequency power
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The utility model discloses a radio frequency power amplifier and a radio frequency power amplifier module, wherein the radio frequency power amplifier comprises a signal input end, an input matching network, a power amplifier and a signal output end which are sequentially connected; the radio frequency power amplifier further comprises a linearization bias circuit connected to an input of the power amplifier; the linearization bias circuit comprises a first resistor, a first triode, a second triode, a first capacitor, a second resistor, a third triode and a third resistor. According to the radio frequency power amplifier, the second resistor connected in series with the first capacitor is additionally arranged in the linearization bias circuit, so that the sensitivity of the branch circuit to frequency can be reduced on the premise of improving linearity, and the radio frequency power amplifier is suitable for a broadband circuit.
Description
[ field of technology ]
The present utility model relates to the field of radio frequency technologies, and in particular, to a radio frequency power amplifier and a radio frequency power amplifier module.
[ background Art ]
The related art rf power amplifier mainly includes 3 transistors (HBT 1, HBT2, HBT 3) and a power transistor (HBT 4) of the power amplifier in the rf main circuit, as shown in fig. 3. The rf power amplifier utilizes the temperature characteristics of the transistors HBT1 and HBT2 and the same characteristics of the power transistor HBT4, and when the base-emitter voltages of the transistors HBT1 and HBT2 are reduced, the voltages V3 and V4 are correspondingly reduced, so that the current of the power transistor HBT4 is reduced to a normal value. The addition of resistor R2 can further improve the temperature stability of the bias circuit. The temperature compensation circuit formed by the transistors HBT1, HBT2 and the resistor R1 can effectively inhibit the drift of the DC bias point and the collapse phenomenon of the current gain caused by the self-heating effect generated by power dissipation.
In addition, when the radio frequency signal is input, part of the signal leaks into the bias circuit, and the base-emitter voltage of the base-emitter diode of the transistor HBT3 is reduced due to rectification, when the leaked radio frequency signal is increased, the base-emitter voltage of the power tube HBT4 is correspondingly reduced, the bypass capacitor C1 is designed to short-circuit the radio frequency signal to the ground, so that the voltage V3 is kept unchanged, at the moment, the base voltage of the power tube HBT4 is increased, the reduced base-emitter voltage is compensated, the bias point of the power tube HBT4 is kept unchanged under high power, and the gain compression is restrained, so that the linearity is improved.
Although the bias circuit of the rf power amplifier in the related art can suppress gain compression by the bypass capacitor C1 to improve linearity, the bypass capacitor C1 is only connected to the base of the transistor HBT3 and then grounded, which results in relatively high frequency sensitivity of the branch, making it unsuitable for a broadband circuit.
[ utility model ]
The utility model aims to provide a novel radio frequency power amplifier so as to solve the problem that a bias circuit of the radio frequency power amplifier in the related art has relatively high sensitivity to frequency, so that the bias circuit cannot be suitable for a broadband circuit.
In order to solve the technical problem, in a first aspect, the present utility model provides a radio frequency power amplifier, which includes a signal input end, an input matching network, a power amplifier and a signal output end that are sequentially connected;
the radio frequency power amplifier further comprises a linearization bias circuit connected to an input of the power amplifier; the linearization bias circuit comprises a first resistor, a first triode, a second triode, a first capacitor, a second resistor, a third triode and a third resistor;
a first end of the first resistor is connected to a first power supply voltage;
the collector electrode of the first triode is connected to the second end of the first resistor, and the base electrode of the first triode is connected with the collector electrode of the first triode;
the collector of the second triode is connected to the emitter of the first triode, the base of the second triode is connected with the collector of the second triode, and the emitter of the second triode is grounded;
the first end of the first capacitor is connected to the base electrode of the first triode;
the first end of the second resistor is connected to the second end of the first capacitor, and the second end of the second resistor is grounded;
the base electrode of the third triode is connected to the base electrode of the first triode, and the collector electrode of the third triode is connected to the second power supply voltage;
the first end of the third resistor is connected to the emitter of the third triode, and the second end of the third resistor is connected to the input end of the power amplifier.
Preferably, the linearization bias circuit further includes a fourth resistor; the first end of the fourth resistor is connected to the emitter of the second triode, and the second end of the fourth resistor is grounded.
Preferably, the linearization bias circuit further includes a second capacitor; the second capacitor is connected with the third resistor in parallel.
Preferably, the input matching network comprises a third capacitor; the first end of the third capacitor is connected with the signal input end, and the second end of the third capacitor is connected to the input end of the power amplifier.
Preferably, the power amplifier includes a fourth triode; the base electrode of the fourth triode is used as the input end of the power amplifier, the emitting electrode of the fourth triode is grounded, and the collecting electrode of the fourth triode is connected to the signal output end.
In a second aspect, the present utility model provides a radio frequency power amplifier module, which includes a radio frequency power amplifier as described above.
Compared with the related art, the radio frequency power amplifier has the advantages that the second resistor connected in series with the first capacitor is additionally arranged in the linearization bias circuit, so that the sensitivity of the branch circuit to frequency can be reduced on the premise of improving linearity, and the radio frequency power amplifier is suitable for a broadband circuit.
[ description of the drawings ]
For a clearer description of the technical solutions of the embodiments of the present utility model, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the description below are only some embodiments of the present utility model, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art, wherein:
fig. 1 is a schematic circuit connection diagram of a radio frequency power amplifier according to an embodiment of the present utility model;
fig. 2 is a schematic diagram showing a gain of a fourth triode in a radio frequency power amplifier according to an embodiment of the present utility model changing with a base voltage;
fig. 3 is a schematic circuit connection diagram of a power amplifier according to the related art.
Wherein, 100, a radio frequency power amplifier; 1. the bias circuit is linearized.
[ detailed description ] of the utility model
The following description of the embodiments of the present utility model will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The embodiment of the utility model provides a radio frequency power amplifier 100, which is shown in fig. 1, and includes a signal input terminal RFin, an input matching network, a power amplifier and a signal output terminal RFout which are sequentially connected.
The input matching network is used for realizing impedance matching between the signal input end RFin and the power amplifier; the power amplifier is used for amplifying the power of the radio frequency signal input by the signal input end RFin.
In this embodiment, the input matching network includes a third capacitor C3; the first end of the third capacitor C3 is connected to the signal input terminal RFin, and the second end of the third capacitor C3 is connected to the input terminal of the power amplifier. Of course, according to actual requirements, the input matching network can be additionally connected with a third capacitor C3 to be connected with other devices.
In this embodiment, the power amplifier includes a fourth triode HBT3; the base of the fourth transistor HBT3 serves as the input of the power amplifier, the emitter of the fourth transistor HBT3 is grounded, and the collector of the fourth transistor HBT3 is connected to the signal output RFout. Of course, according to actual requirements, other devices connected with the fourth triode HBT3 can be additionally arranged in the power amplifier.
Specifically, the radio frequency power amplifier 100 further comprises a linearization bias circuit 1 connected to the input of the power amplifier; the linearization bias circuit 1 includes a first resistor R1, a first triode HBT1, a second triode HBT2, a first capacitor C1, a second resistor R2, a third triode HBT3, and a third resistor R3.
The first end of the first resistor R1 is connected to a first power supply voltage V1.
The collector of the first transistor HBT1 is connected to the second end of the first resistor R1, and the base of the first transistor HBT1 is connected to the collector of the first transistor HBT 1.
The collector of the second triode HBT2 is connected to the emitter of the first triode HBT1, the base of the second triode HBT2 is connected with the collector of the second triode HBT2, and the emitter of the second triode HBT2 is grounded.
A first terminal of the first capacitor C1 is connected to the base of the first transistor HBT 1.
The first end of the second resistor R2 is connected to the second end of the first capacitor C1, and the second end of the second resistor R2 is grounded.
The base of the third transistor HBT3 is connected to the base of the first transistor HBT1 and the collector of the third transistor HBT3 is connected to the second supply voltage V1.
The first end of the third resistor R3 is connected to the emitter of the third transistor HBT3 and the second end of the third resistor R3 is connected to the input of the power amplifier.
The bypass first capacitor C1 is designed to short-circuit the rf signal to ground, thereby keeping the voltage V3 constant, and at this time the voltage at the base of the fourth transistor HBT3 increases, and its reduced base-emitter voltage is compensated, so that the bias point of the fourth transistor HBT3 remains unchanged at high power, and the gain compression is suppressed.
When the base-emitter voltages of the first triode HBT1 and the second triode HBT2 are reduced by utilizing the same temperature characteristics of the first triode HBT1 and the second triode HBT2 and the same characteristics of the fourth triode HBT3, the voltages V3 and V4 are correspondingly reduced so as to reduce the current of the fourth triode HBT3 to a normal value; the addition of the third resistor R3 further improves the temperature stability of the linearization bias circuit 1; the temperature compensation circuit formed by the first triode HBT1, the second triode HBT2 and the first resistor R1 can effectively inhibit the drift of a direct current bias point and the collapse phenomenon of current gain caused by the self-heating effect generated by power dissipation.
In addition, the sensitivity of the branch to frequency can be reduced by providing the fourth resistor R4 in series with the first capacitor C1, and the branch can be applied to a bandwidth circuit.
In this embodiment, the linearization bias circuit 1 further includes a fourth resistor R4; the first end of the fourth resistor R4 is connected to the emitter of the second transistor HBT2, and the second end of the fourth resistor R4 is grounded.
The voltage V3 can be raised by adding the third resistor R3, so that the base voltage (voltage V4) of the fourth triode HBT3 is raised, and at this time, the voltage V4 of the fourth triode HBT3 is raised from a point a to a point B in fig. 2, and when the radio frequency signal is increased, the base-emitter voltage of the fourth triode HBT3 is correspondingly reduced, but the gain can be kept basically unchanged, so as to further inhibit gain compression and improve linearity.
In this embodiment, the linearization bias circuit 1 further includes a second capacitor C2; the second capacitor C2 is arranged in parallel with the third resistor R3. By arranging the second capacitor C2 in parallel with the third resistor R3, the radio frequency signal can avoid the third resistor R3, so that the radio frequency signal entering the emitter of the third triode HBT3 can not be consumed by the third resistor R3.
In addition, when the rf signal is input, a part of the rf signal leaks into the linearization bias circuit 1, the rf signal enters the emitter of the third transistor HBT3 from the bypass second capacitor C2, the base-emitter voltage of the base-emitter diode of the third transistor HBT3 decreases due to rectification, and when the leaked rf signal increases, the base-emitter voltage of the fourth transistor HBT3 also decreases accordingly.
Compared with the related art, the radio frequency power amplifier 100 of the present utility model adds the second resistor R2 connected in series with the first capacitor C1 in the linearization bias circuit 1, so that the sensitivity of the branch to frequency can be reduced on the premise of improving linearity, and the radio frequency power amplifier is suitable for a broadband circuit.
The utility model also provides an embodiment of a radio frequency power amplifier module, which comprises the radio frequency power amplifier 100 in the embodiment. Because the rf power amplifier module in this embodiment includes the rf power amplifier 100 in the above embodiment, the technical effects achieved by the rf power amplifier 100 in the above embodiment can also be achieved, which is not described herein.
The above description of "connected" is understood to mean "electrically connected", "communicatively connected" or "electrically connected" between two devices, etc.
The foregoing description is only illustrative of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present utility model.
Claims (6)
1. The radio frequency power amplifier comprises a signal input end, an input matching network, a power amplifier and a signal output end which are connected in sequence; it is characterized in that the method comprises the steps of,
the radio frequency power amplifier further comprises a linearization bias circuit connected to an input of the power amplifier; the linearization bias circuit comprises a first resistor, a first triode, a second triode, a first capacitor, a second resistor, a third triode and a third resistor;
a first end of the first resistor is connected to a first power supply voltage;
the collector electrode of the first triode is connected to the second end of the first resistor, and the base electrode of the first triode is connected with the collector electrode of the first triode;
the collector of the second triode is connected to the emitter of the first triode, the base of the second triode is connected with the collector of the second triode, and the emitter of the second triode is grounded;
the first end of the first capacitor is connected to the base electrode of the first triode;
the first end of the second resistor is connected to the second end of the first capacitor, and the second end of the second resistor is grounded;
the base electrode of the third triode is connected to the base electrode of the first triode, and the collector electrode of the third triode is connected to the second power supply voltage;
the first end of the third resistor is connected to the emitter of the third triode, and the second end of the third resistor is connected to the input end of the power amplifier.
2. The radio frequency power amplifier of claim 1, wherein the linearization bias circuit further comprises a fourth resistor; the first end of the fourth resistor is connected to the emitter of the second triode, and the second end of the fourth resistor is grounded.
3. The radio frequency power amplifier of claim 1, wherein the linearization bias circuit further comprises a second capacitor; the second capacitor is connected with the third resistor in parallel.
4. The radio frequency power amplifier of claim 1, wherein the input matching network comprises a third capacitor; the first end of the third capacitor is connected with the signal input end, and the second end of the third capacitor is connected to the input end of the power amplifier.
5. The radio frequency power amplifier of claim 1, wherein the power amplifier comprises a fourth transistor; the base electrode of the fourth triode is used as the input end of the power amplifier, the emitting electrode of the fourth triode is grounded, and the collecting electrode of the fourth triode is connected to the signal output end.
6. A radio frequency power amplifier module, characterized in that the radio frequency power amplifier module comprises a radio frequency power amplifier according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320519970.7U CN219514047U (en) | 2023-03-06 | 2023-03-06 | Radio frequency power amplifier and radio frequency power amplifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320519970.7U CN219514047U (en) | 2023-03-06 | 2023-03-06 | Radio frequency power amplifier and radio frequency power amplifier module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219514047U true CN219514047U (en) | 2023-08-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320519970.7U Active CN219514047U (en) | 2023-03-06 | 2023-03-06 | Radio frequency power amplifier and radio frequency power amplifier module |
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| Country | Link |
|---|---|
| CN (1) | CN219514047U (en) |
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2023
- 2023-03-06 CN CN202320519970.7U patent/CN219514047U/en active Active
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