CN113114121B - Bias circuit for radio frequency power amplifier - Google Patents
Bias circuit for radio frequency power amplifier Download PDFInfo
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- CN113114121B CN113114121B CN202110453204.0A CN202110453204A CN113114121B CN 113114121 B CN113114121 B CN 113114121B CN 202110453204 A CN202110453204 A CN 202110453204A CN 113114121 B CN113114121 B CN 113114121B
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- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 10
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims description 45
- 230000000670 limiting effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 14
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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Abstract
The invention discloses a bias circuit for a radio frequency power amplifier, which comprises an input and amplification module, a bias circuit and a bias circuit, wherein the input and amplification module is used for receiving an input radio frequency signal, amplifying the radio frequency signal and then supplying the amplified radio frequency signal to an output end; the input and amplification module comprises a radio frequency power tube QRF for amplifying radio frequency signals; the device comprises a first rectifying path module, a second rectifying path module and a voltage stabilizing and current adjusting module, wherein the first rectifying path module is used for compensating gain compression during medium power, the second rectifying path module is used for compensating gain compression during high power, the first rectifying path module comprises a transistor Q3, the second rectifying path module comprises a transistor Q1 shared with the first rectifying path, and the voltage stabilizing and current adjusting module is used for keeping the conduction state of the transistor Q1 and adjusting the current proportion distributed to the transistors Q1 and Q3; the radio frequency choke module is used for blocking leakage of radio frequency signals; and the temperature compensation module is used for inhibiting the collector current of the transistor Q1 from becoming large due to temperature rise.
Description
Technical Field
The invention relates to the technical field of radio frequency integrated circuits, in particular to a bias circuit which is applied to a radio frequency power amplifier, can improve the gain flatness of the radio frequency power amplifier and has a temperature compensation function.
Background
The radio frequency power amplifier is arranged at the final stage of the transmission chain and is used for carrying out power amplification on the high-frequency modulated carrier signal and radiating the signal into the space through an antenna for long-distance propagation. Therefore, in order to ensure that the opposite side can accurately receive the information of the sender in a certain area, certain requirements on the output power and the linearity of the radio frequency power amplifier must be provided, and the increasing update of the information technology continuously prompts the system to have higher and higher performance requirements on the radio frequency power amplifier.
Currently, most products of rf power amplifiers are manufactured by using Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT). The GaAs HBT still occupies a mainstream position in a radio frequency power amplifier circuit at present or even in a later period of time due to its excellent radio frequency transmission characteristics such as high electron mobility, good substrate insulation, good linearity, and large power density.
However, there is a significant disadvantage to GaAs HBTs: the self-heating effect causes the junction temperature of the device to rise and the emitter voltage to drop, thereby causing sudden gain collapse. When the temperature of the device is increased, the reverse injection current is increased, so that the injection efficiency is reduced, and the current gain is reduced, which is not fatal to a high-power radio frequency power amplifier.
In addition, because the emitter junction of the HBT has a clamping effect on the forward voltage and can cut off the reverse current, when the amplitude of the input signal of the power amplifier exceeds a certain limit, the emitter junction voltage will be clamped, and the base current will be cut off. The positive part of the sinusoidal voltage and the negative part of the sinusoidal current are distorted, and the direct current part of the current of the tube is increased and the direct current part of the voltage is reduced by observing the frequency domain dimension. Therefore, the originally set bias point is shifted, the transconductance of the tube is changed, and gain compression occurs in advance.
The existing self-adaptive bias circuit has a certain temperature compensation effect while maintaining a certain gain flatness, but has the problems of poor temperature compensation effect and the cost of the gain flatness at the time of sacrificing medium power in order to avoid the gain compression phenomenon at the time of high power.
Disclosure of Invention
The invention aims to provide a bias circuit for a radio frequency power amplifier, which strengthens the temperature compensation effect of an active self-adaptive bias circuit, so that the whole circuit has low sensitivity to temperature; meanwhile, the compensation performance of the bias circuit on gain compression of the radio frequency power tube is improved, and the gain flatness of the radio frequency power tube is optimized.
In order to realize the task, the invention adopts the following technical scheme:
a bias circuit for a radio frequency power amplifier comprises an input and amplification module, a first rectifying path module, a second rectifying path module, a voltage stabilizing and current adjusting module, a radio frequency choking module and a temperature compensation module, wherein:
the input and amplification module is used for receiving an input radio frequency signal, amplifying the radio frequency signal and then providing the amplified radio frequency signal to an output end; the input and amplification module comprises a radio frequency power tube QRF for amplifying radio frequency signals;
the first rectifying path module is used for compensating gain compression during medium power, and the second rectifying path module is used for compensating gain compression during high power, wherein the first rectifying path module comprises a transistor Q3, the second rectifying path module comprises a transistor Q1 shared with the first rectifying path, and the transistors Q1 and Q3 form a current mirror;
the voltage stabilizing and current regulating module is used for keeping the conduction state of the transistor Q1 and regulating the current proportion distributed to the transistors Q1 and Q3;
the radio frequency choke module is used for blocking leakage of radio frequency signals;
the temperature compensation module is used for inhibiting the collector current of the transistor Q1 from becoming large due to temperature rise so as to compensate the increase of the QRF current of the radio frequency power tube caused by the temperature rise.
Further, the input and amplification module includes the rf power tube QRF, an input terminal RFin, two blocking capacitors Cblock, an rf choke inductor Lchock, and an output terminal RFout, where:
the input end RFin is connected with the base electrode of a radio frequency power tube QRF after passing through a blocking capacitor Cblock, the emitter of the QRF is grounded, and the collector electrode is connected with a direct current power supply Vcc through a radio frequency choke inductor Lchock; the output terminal RFout is connected between the collectors of Lchock and QRF via another dc blocking capacitor Cblock.
Further, the first rectifying path module includes a bypass capacitor C1, a ballast resistor R1, a transistor Q1, a bypass capacitor C3, a resistor R3, and the transistor Q3, wherein:
the upper end of the ballast resistor R1 and the bypass capacitor C1 after being connected in parallel is connected with an emitter of the transistor Q1, and the lower end of the ballast resistor R1 is connected with a base of the radio frequency power tube QRF; the collector of Q1 is connected with a direct current power supply Vcc, and the base of Q1 is connected with the base of Q3;
the upper end of the bypass capacitor C3 and the resistor R3 which are connected in parallel is connected with a reference voltage Vref, and the lower end of the bypass capacitor C3 and the resistor R3 are connected with a collector of Q3; the emitter of Q3 is connected with the radio frequency choke module.
Further, the second rectifying path module includes a resistor R2, a capacitor C2, and the bypass capacitor C1, a ballast resistor R1, and a transistor Q1, wherein:
the lower polar plate of the capacitor C2 is grounded, the upper polar plate is connected with one end of the resistor R2, and the other end of the resistor R2 is connected between the base electrode of the Q3 and the base electrode of the Q1.
Further, the voltage stabilizing and current regulating module includes a transistor Q4 and a current limiting resistor R4, wherein:
the base electrode of Q4 is connected with the collector electrode thereof, the collector electrode of Q4 is connected with the radio frequency choke module, the emitter electrode of Q4 is connected with one end of a resistor R4 through the radio frequency choke module, and the other end of the resistor R4 is grounded.
Further, the temperature compensation module includes a transistor Q2, and the transistor Q1, the transistor Q3, and a resistor R3, wherein:
the emitter of Q2 is connected with the radio frequency choke module, the collector of Q2 is connected with the reference voltage Vref, and the base of Q2 is connected with the collector of Q3.
Further, the radio frequency choke module includes an inductor L1, an inductor L2, and an inductor L3, wherein:
the inductor L1 is connected between the emitter of the Q2 and the base of the Q1; inductor L2 is connected between the emitter of Q3 and the base of Q4, and inductor L3 is connected between the emitter of Q4 and resistor R4.
Compared with the prior art, the invention has the following technical characteristics:
the circuit provided by the invention improves the temperature compensation effect through a two-stage amplification structure, and has good gain flatness from low power to high power by utilizing two radio frequency signal rectification paths; the circuit can correct the bias point of the radio frequency power amplifier in high power so as to keep certain gain flatness; when the temperature changes, the temperature of the radio frequency power amplifier is compensated, so that the same performance is kept in a certain temperature change range.
Drawings
FIG. 1 is a schematic block diagram of the present invention;
FIG. 2 is a schematic diagram of the circuit principle of one embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating the effect of temperature compensation according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating the effect of two rectifying paths performing gain compression compensation according to an embodiment of the present invention.
Detailed Description
Referring to fig. 1 to 3, the present invention provides a bias circuit for a radio frequency power amplifier, including an input and amplification module 1, a first rectifying path module 5, a second rectifying path module 2, a voltage stabilizing and current adjusting module 3, a radio frequency choke module 4, and a temperature compensation module 6, wherein:
the input and amplification module 1 is used for receiving an input radio frequency signal, amplifying the radio frequency signal and then providing the amplified radio frequency signal to an output end; the input and amplification module comprises a radio frequency power tube QRF for amplifying radio frequency signals; referring to fig. 1, the input and amplification module further includes an input terminal RFin, two blocking capacitors Cblock, a radio frequency choke inductor Lchock, and an output terminal RFout, wherein: the input end RFin is connected with the base electrode of a radio frequency power tube QRF after passing through a blocking capacitor Cblock, the emitter of the QRF is grounded, and the collector electrode is connected with a direct current power supply Vcc through a radio frequency choke inductor Lchock; the output terminal RFout is connected between the collectors of Lchock and QRF via another dc blocking capacitor Cblock.
The first rectifying path module 5 is used for compensating gain compression during medium power, and comprises a transistor Q3, a bypass capacitor C1, a ballast resistor R1, a transistor Q1, a bypass capacitor C3 and a resistor R3; wherein: the upper end of the ballast resistor R1 and the bypass capacitor C1 after being connected in parallel is connected with an emitter of the transistor Q1, and the lower end of the ballast resistor R1 is connected with a base of the radio frequency power tube QRF; the collector of Q1 is connected with a direct current power supply Vcc, and the base of Q1 is connected with the base of Q3; the upper end of the bypass capacitor C3 and the resistor R3 which are connected in parallel is connected with a reference voltage Vref, and the lower end of the bypass capacitor C3 and the resistor R3 are connected with a collector of Q3; the emitter of Q3 is connected with the radio frequency choke module.
The second rectifying path module 2 is used for compensating gain compression in high power, wherein the second rectifying path module comprises a transistor Q1 shared with the first rectifying path, and the transistors Q1 and Q3 form a current mirror; the second rectifying path module also comprises a resistor R2, a capacitor C2, the bypass capacitor C1 and a ballast resistor R1; the lower polar plate of the capacitor C2 is grounded, the upper polar plate is connected with one end of the resistor R2, and the other end of the resistor R2 is connected between the base electrode of the Q3 and the base electrode of the Q1.
The voltage stabilizing and current adjusting module 3 is used for keeping the conduction state of the transistor Q1 and adjusting the current proportion distributed to the transistors Q1 and Q3; the voltage-stabilizing and current-regulating module comprises a transistor Q4 and a current-limiting resistor R4, wherein: the base electrode of Q4 is connected with the collector electrode of Q4, the collector electrode of Q4 is connected with the radio frequency choking module, the emitter electrode of Q4 is connected with one end of a resistor R4 through the radio frequency choking module, and the other end of the resistor R4 is grounded.
The radio frequency choke module 4 is used for blocking the leakage of radio frequency signals; the radio frequency choke module comprises an inductor L1, an inductor L2 and an inductor L3, wherein: the inductor L1 is connected between the emitter of the Q2 and the base of the Q1; inductor L2 is connected between the emitter of Q3 and the base of Q4, and inductor L3 is connected between the emitter of Q4 and resistor R4.
The temperature compensation module 6 is used for inhibiting the collector current of the transistor Q1 from becoming large due to temperature rise so as to compensate the increase of the QRF current of the radio frequency power tube caused by temperature rise; the temperature compensation module comprises a transistor Q2, a transistor Q1, a transistor Q3 and a resistor R3, wherein: the emitter of Q2 is connected with the radio frequency choke module, the collector of Q2 is connected with the reference voltage Vref, and the base of Q2 is connected with the collector of Q3.
Based on the above technical solutions, a circuit structure provided by an embodiment of the present invention is shown in fig. 2, and the present invention is further described with reference to a circuit diagram of the embodiment.
In this embodiment, QRF is a radio frequency power tube, and is used to amplify an input radio frequency signal; the transistors Q1 and Q3 form a current mirror and are used for providing direct current bias of a base electrode for the radio frequency power tube QRF; the transistor Q2 provides a negative feedback path and has an amplifying function; the transistor Q4 is in a diode connection mode and is used for keeping the conduction state of the transistor Q1; lchock is a radio frequency choke inductor and is used for blocking radio frequency signals from leaking to a direct current power supply Vcc; the Cblock is a blocking capacitor and is used for coupling an input radio frequency signal to the radio frequency power tube QRF and coupling an output radio frequency signal to a load, so that the direct current bias point of the amplifier is prevented from being influenced; the resistor R1 is a ballast resistor, so that the base bias current of the radio frequency power tube QRF can be changed, and the thermal stability and linearization of the power tube QRF can be ensured to prevent current gain collapse; the resistor R3 is a negative feedback resistor and converts the current changed by the path into changed voltage; the resistor R4 is a current-limiting resistor and can adjust the current proportion of two branches of the transistors Q1 and Q3; a first rectifying path is formed by the bypass capacitor C1, the ballast resistor R1, the transistor Q3, the bypass capacitor C3 and the resistor R3; a second rectifying path is formed by the bypass capacitor C1, the ballast resistor R1, the transistor Q1, the resistor R2 and the capacitor C2; the inductor L1, the inductor L2 and the inductor L3 are used for blocking leakage of radio frequency signals.
The temperature compensation module of the invention mainly comprises a transistor Q3, a resistor R3, a transistor Q2 and a transistor Q1, and the compensation principle is as follows: when the temperature of the chip rises, the current flowing through the collector of the transistor Q3 will increase, and the potential difference between the two ends of the resistor R3 will also increase, so that the bias voltage of the base of the transistor Q2 will decrease, thereby suppressing the collector current of Q2 from increasing due to the temperature rise, further suppressing the collector current of Q1 from increasing due to the temperature rise, and finally compensating the increase of the QRF current of the radio frequency power tube caused by the temperature rise.
The static bias current provided by the bias circuit to the radio frequency power tube QRF is determined by the resistors R1, R3 and R4 and the transistors Q1, Q2, Q3 and Q4. The temperature compensation module enables the active bias network to have a negative feedback function, and the poor temperature characteristic of the device is restrained. When an input signal is added to the QRF base of the radio frequency power tube, a part of radio frequency signals pass through the first rectification path module and the second rectification path module to enable the gain compression of the power amplifier to be compensated, and therefore the purpose of optimizing the gain flatness of the power amplifier is achieved.
The application example is as follows:
in an application example of the invention, the selection parameters of each component are as follows:
the area of the transistor Q1 is 120 square micrometers, the area of the transistor Q2 is 120 square micrometers, the area of the transistor Q3 is 6 square micrometers, the area of the transistor Q4 is 10 square micrometers, the resistance value of the resistor R1 is 40 ohms, the resistance value of the resistor R2 is 80 ohms, the resistance value of the resistor R3 is 5000 ohms, the resistance value of the resistor R4 is 20 ohms, the capacitance value of the capacitor C1 is 5 picofarads, the capacitance value of the capacitor C2 is 2 picofarads, the capacitance value of the capacitor C3 is 10 picofarads, the inductance values of the inductors L1, L2 and L3 are greater than 0.5 nanohenries, and relevant effect graphs are shown in fig. 2 and fig. 3.
The transistor Q1 and the transistor Q2 form a two-stage amplification structure, so long as temperature fluctuates, the potential difference at two ends of the resistor R3 changes, namely the base electrode potential of the transistor Q2 fluctuates in a small range, and after two-stage amplification, the temperature compensation effect can be enhanced, so that the temperature sensitivity of the whole circuit is reduced. The temperature compensation effect is shown in fig. 2.
In addition, the invention further improves the improved gain compression performance of the traditional self-adaptive bias network, and the principle is as follows: as mentioned above, the invention introduces two radio frequency signal rectification paths, which are the first rectification paths respectively composed of the bypass capacitor C1, the ballast resistor R1, the transistor Q3, the bypass capacitor C3 and the resistor R3; and a second rectifying path consisting of a bypass capacitor C1, a ballast resistor R1, a transistor Q1, a resistor R2 and a capacitor C2. Since the emitter junction of transistor QRF and the emitter junction of transistor Q1 and the emitter junction of transistor Q3 all have the same device characteristics, in the first rectifying path, the transistor Q3 has a significant effect on compensating for the power gain compression; in the second commutation path, tube Q1 has a significant effect on the compensation of high power gain compression, but relatively weak compensation for medium power gain compression. Therefore, the invention combines two rectifying paths, and can achieve good gain flatness from low power to high power, and the effect is shown in fig. 3.
The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (5)
1. A bias circuit for a radio frequency power amplifier, comprising an input and amplification module, a first rectifying path module, a second rectifying path module, a voltage stabilizing and current adjusting module, a radio frequency choke module and a temperature compensation module, wherein:
the input and amplification module is used for receiving an input radio frequency signal, amplifying the radio frequency signal and then providing the amplified radio frequency signal to an output end; the input and amplification module comprises a radio frequency power tube QRF for amplifying radio frequency signals;
the first rectifying path module is used for compensating gain compression during medium power, and the second rectifying path module is used for compensating gain compression during high power, wherein the first rectifying path module comprises a transistor Q3, the second rectifying path module comprises a transistor Q1 shared with the first rectifying path module, and the transistors Q1 and Q3 form a current mirror;
the voltage stabilizing and current adjusting module is used for keeping the conduction state of the transistor Q1 and adjusting the current proportion distributed to the transistors Q1 and Q3;
the radio frequency choke module is used for blocking leakage of radio frequency signals;
the temperature compensation module is used for inhibiting the collector current of the transistor Q1 from becoming large due to temperature rise so as to compensate the increase of the QRF current of the radio frequency power tube caused by the temperature rise;
the input and amplification module comprises the radio frequency power tube QRF, an input end RFin, two blocking capacitors Cblock, a radio frequency choke inductor Lchock and an output end RFout, wherein:
the input end RFin is connected with the base electrode of a radio frequency power tube QRF after passing through a blocking capacitor Cblock, the emitter of the QRF is grounded, and the collector electrode is connected with a direct current power supply Vcc through a radio frequency choke inductor Lchock; the output end RFout is connected between collectors of Lchock and QRF through another blocking capacitor Cblock;
the first rectifying path module comprises a bypass capacitor C1, a ballast resistor R1, a transistor Q1, a bypass capacitor C3, a resistor R3, and the transistor Q3, wherein:
the upper end of the ballast resistor R1 and the bypass capacitor C1 after being connected in parallel is connected with an emitter of the transistor Q1, and the lower end of the ballast resistor R1 is connected with a base of the radio frequency power tube QRF; the collector of Q1 is connected with a direct current power supply Vcc, and the base of Q1 is connected with the base of Q3;
the upper end of the shunt capacitor C3 and the resistor R3 which are connected in parallel is connected with a reference voltage Vref, and the lower end of the shunt capacitor C3 is connected with a collector of Q3; the emitter of the Q3 is connected with the radio frequency choke module;
the second rectifying path module comprises a resistor R2, a capacitor C2, a bypass capacitor C1, a ballast resistor R1 and a transistor Q1, wherein:
the lower polar plate of the capacitor C2 is grounded, the upper polar plate is connected with one end of the resistor R2, and the other end of the resistor R2 is connected between the base electrode of the Q3 and the base electrode of the Q1.
2. The bias circuit for a radio frequency power amplifier according to claim 1, wherein the voltage stabilizing and current adjusting module comprises a transistor Q4 and a current limiting resistor R4, wherein:
the base electrode of Q4 is connected with the collector electrode of Q4, the collector electrode of Q4 is connected with the radio frequency choking module, the emitter electrode of Q4 is connected with one end of a resistor R4 through the radio frequency choking module, and the other end of the resistor R4 is grounded.
3. The bias circuit for a radio frequency power amplifier according to claim 2, wherein the temperature compensation module comprises a transistor Q2 and the transistor Q1, the transistor Q3 and a resistor R3, wherein:
the emitter of Q2 is connected with the radio frequency choke module, the collector of Q2 is connected with the reference voltage Vref, and the base of Q2 is connected with the collector of Q3.
4. The bias circuit for a radio frequency power amplifier according to claim 3, wherein the radio frequency choke module comprises an inductor L1, an inductor L2, and an inductor L3, wherein:
the inductor L1 is connected between the emitter of the Q2 and the base of the Q1; inductor L2 is connected between the emitter of Q3 and the base of Q4, and inductor L3 is connected between the emitter of Q4 and resistor R4.
5. An rf power amplifier, characterized in that the rf power amplifier employs the bias circuit according to any one of claims 1 to 4.
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| CN113489461A (en) * | 2021-07-28 | 2021-10-08 | 电子科技大学 | Radio frequency predistortion linearizer and radio frequency power amplifier |
| CN113507269B (en) * | 2021-09-10 | 2021-11-16 | 航天科工通信技术研究院有限责任公司 | Circuit microwave signal stable gain device |
| CN115940837A (en) * | 2022-12-31 | 2023-04-07 | 广州慧智微电子股份有限公司 | Power amplifier and electronic device |
| CN116073770B (en) * | 2023-03-21 | 2023-06-13 | 成都明夷电子科技有限公司 | HBT power amplifier and electronic equipment |
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| CN101867345A (en) * | 2009-04-15 | 2010-10-20 | 中国科学院半导体研究所 | Integrated inductance capacitance voltage-controlled oscillator for ultra-wideband low-phase noise |
| CN110677132B (en) * | 2019-09-05 | 2020-09-25 | 广州穗源微电子科技有限公司 | Radio frequency linear power amplifier circuit |
| CN110784182A (en) * | 2019-11-26 | 2020-02-11 | 北京无线电测量研究所 | Bias circuit of bipolar junction transistor |
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