CN219449870U - Sample table assembly and MPCVD equipment - Google Patents
Sample table assembly and MPCVD equipment Download PDFInfo
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- CN219449870U CN219449870U CN202320317457.XU CN202320317457U CN219449870U CN 219449870 U CN219449870 U CN 219449870U CN 202320317457 U CN202320317457 U CN 202320317457U CN 219449870 U CN219449870 U CN 219449870U
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Abstract
The utility model relates to the technical field of microwave plasma, in particular to a sample table assembly and MPCVD equipment, wherein the sample table assembly comprises a first tuning piece connected with a sample table, the upper surface of the first tuning piece is lower than the upper surface of the sample table, the outer diameter of the first tuning piece is larger than the outer diameter of the sample table, the first tuning piece is coaxial with the sample table, and the sample table assembly with larger discharge area and suitable for preparing a large-area diamond film is provided.
Description
Technical Field
The utility model relates to the technical field of microwave plasmas, in particular to a sample table assembly and MPCVD equipment.
Background
The microwave plasma chemical vapor deposition method is an advanced method for preparing high-quality diamond films at present, and the method needs to use microwave plasma chemical vapor deposition equipment (MPCVD for short), wherein the MPCVD is to guide microwaves generated by a microwave generator into a reaction cavity through a waveguide transmission system, and introduce mixed gas of methane and hydrogen, glow discharge is generated in the reaction cavity under the excitation of the microwaves, so that molecules of the reaction gas are ionized, plasma is generated, and the diamond films are deposited on a sample stage, thereby obtaining the diamond films.
The discharge area of the plasma is small (see figure 1) under the influence of the structure of the sample table assembly in the prior art, the preparation condition of the large-area diamond film can not be met, and the application prospect of MPCVD equipment is severely restricted.
Disclosure of Invention
The utility model aims to overcome the defects of the prior art and provides a sample table component which has larger discharge area and is suitable for preparing a large-area diamond film.
Another object of the present utility model is to provide an MPCVD apparatus employing the above sample stage assembly.
The aim of the utility model is achieved by the following technical scheme:
a sample stage assembly comprising a first tuning member coupled to a sample stage, an upper surface of the first tuning member being lower than an upper surface of the sample stage, an outer diameter of the first tuning member being greater than an outer diameter of the sample stage, the first tuning member being coaxial with the sample stage.
Further, the first tuning piece is provided with a first positioning hole, and the sample stage is arranged in the first positioning hole.
Further, the device further comprises a second tuning piece connected with the first tuning piece, a gap is arranged between the second tuning piece and the first tuning piece, the upper surface of the second tuning piece is lower than the lower surface of the first tuning piece, the outer diameter of the second tuning piece is larger than the outer diameter of the first tuning piece and smaller than the inner diameter of the reaction cavity, and the second tuning piece is coaxial with the sample table.
Further, the sample stage further comprises a support arranged between the first tuning piece and the second tuning piece, wherein the outer diameter of the support is smaller than that of the first tuning piece, and the support is coaxial with the sample stage.
Further, the first tuning piece is provided with a second positioning hole, the second tuning piece is provided with a third positioning hole, one end of the supporting piece is arranged in the second positioning hole, and the other end of the supporting piece is arranged in the third positioning hole.
Further, a tuning ring is connected with the first tuning piece, the upper surface of the tuning ring is lower than the upper surface of the sample stage and higher than the upper surface of the first tuning piece, and the tuning ring is coaxial with the sample stage.
Further, the inner diameter of the tuning ring is larger than the outer diameter of the sample stage.
Further, the outer diameter of the tuning ring is smaller than the outer diameter of the first tuning piece.
Further, the first tuning piece is provided with a positioning ring groove, and the tuning ring is arranged in the positioning ring groove.
An MPCVD apparatus comprising the sample stage assembly.
The utility model has the following advantages:
1. the structure is simple, and the processing and the manufacturing are convenient;
2. the discharge area is larger, the method is suitable for preparing large-area diamond films, and the application prospect is better.
Drawings
In order to more clearly illustrate the technical solution of the embodiments of the present utility model, the drawings that are required to be used in the embodiments will be briefly described. It is to be understood that the following drawings illustrate only certain embodiments of the utility model and are therefore not to be considered limiting of its scope, for the person of ordinary skill in the art may admit to other equally relevant drawings without inventive effort.
FIG. 1 is a simulation diagram of plasma field strength of a prior art sample stage assembly;
FIG. 2 is a schematic cross-sectional view of a sample stage assembly of the present utility model;
FIG. 3 is a schematic view of a reaction chamber of an MPCVD apparatus according to the present utility model in partial cutaway;
FIG. 4 is a simulation diagram of the plasma field strength of a sample stage assembly of the present utility model;
in the figure: 1-sample stage, 2-first tuning piece, 3-second tuning piece, 4-reaction chamber, 5-support piece, 6-tuning ring.
Description of the embodiments
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are only some embodiments of the present utility model, but not all embodiments of the present utility model. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative efforts fall within the protection scope of the present utility model.
In the description of the present utility model, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present utility model and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," "overhang," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the present utility model, unless expressly stated or limited otherwise, a first feature may include first and second features directly contacting each other, either above or below a second feature, or through additional features contacting each other, rather than directly contacting each other. Moreover, the first feature being above, over, and on the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being below, beneath, and beneath the second feature includes the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is less level than the second feature.
As shown in fig. 2 to 4, a sample stage assembly comprises a first tuning member 2 connected to a sample stage 1; in order to increase the discharge area of the plasma, the upper surface of the first tuning piece 2 is lower than the upper surface of the sample stage 1, the outer diameter of the first tuning piece 2 is larger than the outer diameter of the sample stage 1, and the first tuning piece 2 is coaxial with the sample stage 1.
Further, the first tuning piece 2 is provided with a first positioning hole, and the sample stage 1 is arranged in the first positioning hole; specifically, the upper surface of the first tuning piece 2 is provided with a first positioning hole, the axis of the first positioning hole coincides with the axis of the first tuning piece 2, the first positioning hole is coaxial with the sample stage 1, and the sample stage 1 is arranged in the first positioning hole in a pluggable manner.
Further, the plasma discharge device further comprises a second tuning piece 3 connected with the first tuning piece 2, in order to further increase the discharge area of plasma, a gap is arranged between the second tuning piece 3 and the first tuning piece 2, the upper surface of the second tuning piece 3 is lower than the lower surface of the first tuning piece 2, the outer diameter of the second tuning piece 3 is larger than the outer diameter of the first tuning piece 2 and smaller than the inner diameter of the reaction cavity 4, and the second tuning piece 3 is coaxial with the sample table 1.
Further, the device further comprises a supporting piece 5 arranged between the first tuning piece 2 and the second tuning piece 3, one end of the supporting piece 5 is connected with the first tuning piece 2, the other end of the supporting piece 5 is connected with the second tuning piece 3, the outer diameter of the supporting piece 5 is smaller than that of the first tuning piece 2, and the supporting piece 5 is coaxial with the sample platform 1.
Further, the first tuning piece 2 is provided with a second positioning hole, the second tuning piece 3 is provided with a third positioning hole, one end of the supporting piece 5 is arranged in the second positioning hole, and the other end of the supporting piece 5 is arranged in the third positioning hole; specifically, the lower surface of first tuning piece 2 is provided with the second locating hole, the axis in second locating hole coincides with the axis of first tuning piece 2, the upper surface of second tuning piece 3 is provided with the third locating hole, the axis in third locating hole coincides with the axis of second tuning piece 3, second locating hole and third locating hole are all coaxial with sample platform 1, the pluggable setting of one end of support piece 5 is in the second locating hole, the pluggable setting of the other end of support piece 5 is in the third locating hole.
Further, in order to be able to confine and concentrate the plasma field strength and to facilitate a uniform distribution of the plasma, a tuning ring 6 is further included, which is connected to the first tuning member 2, the tuning ring 6 having an upper surface below the upper surface of the sample stage 1 and above the upper surface of the first tuning member 2, the tuning ring 6 being coaxial with the sample stage 1.
Further, in order to facilitate even distribution of the plasma, the inner diameter of the tuning ring 6 is larger than the outer diameter of the sample stage 1.
Further, in order to further facilitate uniform distribution of the plasma, the outer diameter of the tuning ring 6 is smaller than the outer diameter of the first tuning member 2.
Further, the first tuning piece 2 is provided with a positioning ring groove, and the tuning ring 6 is arranged in the positioning ring groove; specifically, the upper surface of first tuning piece 2 is provided with the locating ring groove, the locating ring groove sets up around first locating hole, the axis of locating ring groove and the axis coincidence of first tuning piece 2, the locating ring groove is coaxial with sample platform 1, tuning ring 6 pluggable setting is in the locating ring groove.
An MPCVD apparatus comprising the sample stage assembly.
Comparing fig. 1 and fig. 4, it can be seen that the sphere formed by the plasma of the sample stage assembly of the present utility model is larger, i.e. the discharge area is larger, so that the sample stage assembly is suitable for preparing large-area diamond films, and has good application prospects.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, and various modifications and variations may be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. A sample stage assembly, characterized in that: the device comprises a first tuning piece (2) connected with a sample table (1), wherein the upper surface of the first tuning piece (2) is lower than the upper surface of the sample table (1), the outer diameter of the first tuning piece (2) is larger than the outer diameter of the sample table (1), and the first tuning piece (2) is coaxial with the sample table (1).
2. The sample stage assembly of claim 1, wherein: the first tuning piece (2) is provided with a first positioning hole, and the sample stage (1) is arranged in the first positioning hole.
3. The sample stage assembly of any one of claims 1 or 2, wherein: the device is characterized by further comprising a second tuning piece (3) connected with the first tuning piece (2), a gap is arranged between the second tuning piece (3) and the first tuning piece (2), the upper surface of the second tuning piece (3) is lower than the lower surface of the first tuning piece (2), the outer diameter of the second tuning piece (3) is larger than the outer diameter of the first tuning piece (2) and smaller than the inner diameter of the reaction cavity (4), and the second tuning piece (3) is coaxial with the sample table (1).
4. A sample stage assembly according to claim 3, wherein: the device further comprises a supporting piece (5) arranged between the first tuning piece (2) and the second tuning piece (3), wherein the outer diameter of the supporting piece (5) is smaller than that of the first tuning piece (2), and the supporting piece (5) is coaxial with the sample table (1).
5. The sample stage assembly of claim 4, wherein: the first tuning piece (2) is provided with a second positioning hole, the second tuning piece (3) is provided with a third positioning hole, one end of the supporting piece (5) is arranged in the second positioning hole, and the other end of the supporting piece (5) is arranged in the third positioning hole.
6. The sample stage assembly of claim 4, wherein: the device further comprises a tuning ring (6) connected with the first tuning piece (2), wherein the upper surface of the tuning ring (6) is lower than the upper surface of the sample stage (1) and higher than the upper surface of the first tuning piece (2), and the tuning ring (6) is coaxial with the sample stage (1).
7. The sample stage assembly of claim 6, wherein: the inner diameter of the tuning ring (6) is larger than the outer diameter of the sample table (1).
8. The sample stage assembly of claim 7, wherein: the outer diameter of the tuning ring (6) is smaller than the outer diameter of the first tuning piece (2).
9. The sample stage assembly of any one of claims 6 to 8, wherein: the first tuning piece (2) is provided with a positioning ring groove, and the tuning ring (6) is arranged in the positioning ring groove.
10. An MPCVD apparatus, characterized by: the MPCVD apparatus comprising the sample stage assembly of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320317457.XU CN219449870U (en) | 2023-02-27 | 2023-02-27 | Sample table assembly and MPCVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320317457.XU CN219449870U (en) | 2023-02-27 | 2023-02-27 | Sample table assembly and MPCVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219449870U true CN219449870U (en) | 2023-08-01 |
Family
ID=87382329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320317457.XU Active CN219449870U (en) | 2023-02-27 | 2023-02-27 | Sample table assembly and MPCVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219449870U (en) |
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2023
- 2023-02-27 CN CN202320317457.XU patent/CN219449870U/en active Active
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Address after: 610041 No.301, 3rd floor, G3 building, G District, Tianfu Software Park, no.1800, middle Yizhou Avenue, high tech Zone, Chengdu, Sichuan Patentee after: CHENGDU WATTSINE ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: Building B17, Perception Internet of Things Industrial Park, No. 777, Section 4, Huafu Avenue, Shuangliu District, Chengdu, 610200, Sichuan Patentee before: CHENGDU WATTSINE ELECTRONIC TECHNOLOGY Co.,Ltd. |
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| CP02 | Change in the address of a patent holder |