CN218435940U

CN218435940U - Reaction chamber for MPCVD equipment

Info

Publication number: CN218435940U
Application number: CN202222835841.7U
Authority: CN
Inventors: 黄春林; 刘文科; 胡宗义; 李俊宏; 季宇
Original assignee: Chengdu Neoman Hueray Microwave Technology Co ltd
Current assignee: Chengdu Neoman Hueray Microwave Technology Co ltd
Priority date: 2022-10-27
Filing date: 2022-10-27
Publication date: 2023-02-03
Anticipated expiration: 2032-10-27

Abstract

The utility model relates to a microwave plasma technical field particularly, relates to a reaction chamber for MPCVD equipment, including molybdenum platform 1, sample platform 2, upper cavity 3 and lower cavity 4 all are the cylinder form, upper cavity 3 is coaxial with lower cavity 4, the diameter of upper cavity 3 is greater than the diameter of cavity 4 down, be provided with first chamfer 7 between the top surface of upper cavity 3 and the lateral wall, be provided with second chamfer 8 between the top surface of cavity 4 and the lateral wall down, be provided with third chamfer 9 between the bottom surface of cavity 4 and the lateral wall down, provide a reaction chamber for MPCVD equipment that can concentrate field intensity, extension equipment life.

Description

Reaction chamber for MPCVD equipment

Technical Field

The utility model relates to a microwave plasma technical field particularly, relates to a reaction chamber for MPCVD equipment.

Background

A microwave plasma chemical vapor deposition method is an advanced method for preparing high-quality diamond film at present, and the method needs microwave plasma chemical vapor deposition equipment (MPCVD), wherein the MPCVD is to introduce microwaves generated by a microwave generator into a reaction cavity through a waveguide transmission system, introduce mixed gas of methane and hydrogen, generate glow discharge in the reaction cavity under the excitation of the microwaves, ionize molecules of the reaction gas, generate plasma, and deposit on a sample to obtain the diamond film.

The reaction chamber of the MPCVD equipment in the prior art has dispersed plasma field intensity (see figure 1) and is not beneficial to the deposition of diamond films.

SUMMERY OF THE UTILITY MODEL

The utility model aims at overcoming the defects of the prior art and providing a reaction chamber for MPCVD equipment, which can concentrate the field intensity and prolong the service life of the equipment.

The purpose of the utility model is realized through the following technical scheme:

the reaction chamber for the MPCVD equipment comprises a molybdenum table, a sample table, an upper cavity and a lower cavity, wherein the upper cavity and the lower cavity are cylindrical, the upper cavity and the lower cavity are coaxial, the diameter of the upper cavity is larger than that of the lower cavity, a first chamfer angle is arranged between the top surface and the side wall of the upper cavity, a second chamfer angle is arranged between the top surface and the side wall of the lower cavity, and a third chamfer angle is arranged between the bottom surface and the side wall of the lower cavity.

Furthermore, a spherical reflecting surface is arranged on the top surface of the upper cavity in a downward protruding mode.

Furthermore, a plane is arranged at the bottom of the spherical reflecting surface and is arranged right above the molybdenum table, and the plane is parallel to the molybdenum table.

Furthermore, the top surface of the upper cavity is provided with a cylinder in a downward protruding mode, the lower bottom surface of the cylinder is arranged right above the molybdenum table, and the lower bottom surface is parallel to the molybdenum table.

Furthermore, a tuning ring is arranged on the sample stage, and the molybdenum stage is arranged in the tuning ring.

Preferably, the height of the molybdenum table is H, and the height of the tuning ring is H ₁ Said H is ₁ ＞H。

The reaction chamber is provided with a reaction cavity, and the reaction chamber is provided with a first through hole; alternatively or additionally, the first through hole is used for observation.

Furthermore, the device also comprises a second through hole, wherein the second through hole is arranged on the side wall of the upper cavity and is used for observing.

Furthermore, a water channel is arranged at the top of the upper cavity, and cooling liquid is arranged in the water channel.

Preferably, a gap is arranged between the tuning ring and the molybdenum table, the width of the gap is D, and the D epsilon [ H/3, H ].

The utility model has the advantages of it is following:

1. plasma field intensity can be better restrained and concentrated, formation of a diamond film is facilitated, and deposition efficiency and quality of the diamond film are improved;

2. the heat radiation path of the lower cavity is narrower, so that the support ring and the sealing element thereof can be better protected, and the service life of the equipment is prolonged;

3. the tuning ring can effectively inhibit the discharge phenomenon at the edge of the molybdenum platform, is more beneficial to the formation of the diamond film, and further improves the deposition efficiency and quality of the diamond film.

Drawings

In order to more clearly illustrate the technical solution of the embodiments of the present invention, the drawings used in the embodiments will be briefly described below. It is understood that the following drawings depict only some embodiments of the invention and are therefore not to be considered limiting of its scope, for the person skilled in the art will be able to derive from them other related drawings without inventive faculty.

FIG. 1 is a graph showing a simulation of plasma field strength of a reaction chamber of a MPCVD apparatus according to the prior art;

FIG. 2 is a schematic sectional view of a reaction chamber used in an MPCVD apparatus according to embodiment 1 of the present invention;

FIG. 3 is a perspective view of FIG. 2;

FIG. 4 is a schematic sectional view of a reaction chamber used in an MPCVD apparatus according to embodiment 2 of the present invention;

FIG. 5 is a perspective view of FIG. 4;

FIG. 6 is an enlarged view of a portion of FIG. 2 or FIG. 4;

fig. 7 is a simulation diagram of the plasma field strength according to embodiment 1 of the present invention;

fig. 8 is a simulation diagram of the plasma field strength according to embodiment 2 of the present invention;

in the figure: 1-molybdenum table, 2-sample table, 3-upper cavity, 4-lower cavity, 5-spherical reflecting surface, 6-plane, 7-first chamfer, 8-second chamfer, 9-third chamfer, 10-tuning ring, 11-first through hole, 12-observation window, 13-air pipe, 14-second through hole, 15-water channel, 16-supporting ring, and 17-lower bottom surface.

Detailed Description

To make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the drawings in the embodiments of the present invention are combined to clearly and completely describe the technical solutions in the embodiments of the present invention, and obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiment in the utility model, ordinary technical personnel in this field do not make under the creative work prerequisite, all other embodiments that obtain all belong to the scope of the utility model protection.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the product of the present invention is used, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the present disclosure, unless otherwise expressly stated or limited, the first feature may comprise both the first and second features directly contacting each other, and also may comprise the first and second features not being directly contacting each other but being in contact with each other by means of further features between them. Also, the first feature may be over, above or on the second feature including the first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is at a higher level than the second feature. A first feature being below, beneath or beneath a second feature includes the first feature being directly below and obliquely below the second feature or simply indicating that the first feature is at a lesser level than the second feature.

A reaction chamber for MPCVD equipment comprises a molybdenum table 1, a sample table 2, an upper cavity 3 and a lower cavity 4, wherein the upper cavity 3 and the lower cavity 4 are both cylindrical, the upper cavity 3 and the lower cavity 4 are coaxial, and the diameter of the upper cavity 3 is larger than that of the lower cavity 4; in order to configure the reaction chamber into an ellipsoid shape as much as possible so as to enable the field intensity distribution to be more concentrated, a first chamfer 7 is arranged between the top surface and the side wall of the upper cavity 3, a second chamfer 8 is arranged between the top surface and the side wall of the lower cavity 4, and a third chamfer 9 is arranged between the bottom surface and the side wall of the lower cavity 4; the diameter of the lower cavity 4 is set small in order to narrow the path of the heat radiation, which allows a better protection of the support ring 16 and its seals, prolonging its service life, see fig. 2 to 5; it should be noted that the first chamfer 7, the second chamfer 8 and the third chamfer 9 may be a right angle or a rounded angle.

Furthermore, the top surface of the upper cavity 3 is provided with a spherical reflecting surface 5 (see fig. 2 and 3) in a downward protruding manner, and the spherical reflecting surface 5 can effectively gather energy right below the spherical reflecting surface (see fig. 7), so that the input power of microwaves is improved, the synthesis efficiency of the diamond film is further improved, the power is improved, and the deposition area can be increased.

Further, in order to increase the discharge area and thus increase the deposition area of the diamond film, the bottom of the spherical reflecting surface 5 is provided with a plane 6; in order to make the deposition of the diamond film more uniform, the plane 6 is arranged directly above the molybdenum table 1, the plane 6 being parallel to the molybdenum table 1, see fig. 2 and 3.

Further, a cylinder is convexly arranged on the top surface of the upper cavity 3 downwards, the lower bottom surface 17 of the cylinder is arranged right above the molybdenum table 1, and in order to make the deposition of the diamond film more uniform, the lower bottom surface 17 is parallel to the molybdenum table 1, as shown in fig. 4 and 5; the cylinder can effectively gather energy right below the cylinder (see figure 8), so that the input power of microwave is improved, the synthesis efficiency of the diamond film is further improved, the power is improved, and the deposition area can be increased; the lower bottom surface 17 can increase the discharge area, thereby increasing the deposition area of the diamond film; in order to be more beneficial to the concentration of the field intensity, the lower bottom surface 17 is perpendicular to the side wall of the cylinder, and no chamfer (including a chamfer angle and a fillet) is arranged at the junction of the lower bottom surface 17 and the side wall of the cylinder.

Further, in order to further confine and concentrate the plasma field strength, the sample stage 2 is provided with a tuning ring 10, and the molybdenum stage 1 is arranged in the tuning ring 10, as shown in fig. 2 to 6.

Preferably, the height of the molybdenum table 1 is H, and the height of the tuning ring 10 is H ₁ In order to avoid the discharge phenomenon at the edge of the molybdenum table 1 to weaken the field strength so as to reduce the deposition efficiency and quality of the diamond film, H ₁ ＞H。

Further, the reaction chamber further comprises a first through hole 11, wherein the first through hole 11 is formed in the top of the upper cavity 3, and the first through hole 11 is used for introducing reaction gas into the reaction chamber; or/and the first through hole 11 is used for observing the effect; specifically, an observation window 12 may be disposed on the first through hole 11, a hole may be disposed on a side wall of the observation window 12, and then the gas pipe 13 is inserted into the hole, so that the internal condition of the reaction chamber can be observed through the observation window 12 and the first through hole 11, and the reaction gas may enter the reaction chamber through the gas pipe 13, the hole, and the first through hole 11 in sequence, as shown in fig. 2 to 5.

Further, a second through hole 14 is also included, the second through hole 14 is arranged on the side wall of the upper cavity 3, and the second through hole 14 is used for observing the effect; specifically, quartz glass may be disposed on the second through hole 14, and the inside of the reaction chamber can be observed through the quartz glass, as shown in fig. 2 to 5; in some embodiments, the second through hole 14 for observation and the quartz glass may be formed on the sidewall of the lower cavity 4.

Further, in order to cool the cavity of the upper cavity 3 and prolong the service life of the device, a water channel 15 is disposed at the top of the upper cavity 3, and a cooling liquid is disposed in the water channel 15, as shown in fig. 2 to 5.

Preferably, a gap is provided between the tuning ring 10 and the molybdenum table 1, the width of the gap being D, the D e [ H/3, H ].

Therefore, the reaction chamber for the MPCVD equipment of the utility model can concentrate the field intensity, prolong the service life of the equipment and is more beneficial to the deposition of the diamond film.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A reaction chamber for MPCVD equipment, includes molybdenum platform (1), sample platform (2), upper cavity (3) and lower cavity (4), its characterized in that: the upper cavity (3) and the lower cavity (4) are both cylindrical, the upper cavity (3) and the lower cavity (4) are coaxial, the diameter of the upper cavity (3) is larger than that of the lower cavity (4), a first chamfer (7) is arranged between the top surface and the side wall of the upper cavity (3), a second chamfer (8) is arranged between the top surface and the side wall of the lower cavity (4), and a third chamfer (9) is arranged between the bottom surface and the side wall of the lower cavity (4).

2. The reaction chamber for an MPCVD apparatus according to claim 1, wherein: the top surface of the upper cavity (3) is provided with a spherical reflecting surface (5) in a downward protruding manner.

3. The reaction chamber for an MPCVD apparatus according to claim 2, wherein: the bottom of the spherical reflecting surface (5) is provided with a plane (6), the plane (6) is arranged right above the molybdenum table (1), and the plane (6) is parallel to the molybdenum table (1).

4. The reaction chamber for an MPCVD apparatus according to claim 1, wherein: the top surface of upper chamber (3) downward protrusion is provided with the cylinder, the lower bottom surface (17) setting of cylinder is directly over molybdenum platform (1), lower bottom surface (17) is parallel with molybdenum platform (1).

5. The reaction chamber for an MPCVD apparatus according to any one of claims 1 to 4, wherein: the sample table (2) is provided with a tuning ring (10), and the molybdenum table (1) is arranged in the tuning ring (10).

6. The reaction chamber for an MPCVD apparatus according to claim 5, wherein: the height of the molybdenum table (1) is H, and the height of the tuning ring (10) is H ₁ Said H is ₁ ＞H。

7. The reaction chamber for an MPCVD apparatus according to claim 5, wherein: the reaction chamber further comprises a first through hole (11), the first through hole (11) is formed in the top of the upper cavity (3), and the first through hole (11) is used for introducing reaction gas into the reaction chamber; or/and the first through hole (11) is used for observing the effect.

8. The reaction chamber for an MPCVD apparatus according to claim 7, wherein: the device also comprises a second through hole (14), wherein the second through hole (14) is arranged on the side wall of the upper cavity (3), and the second through hole (14) is used for observing the effect.

9. The reaction chamber for an MPCVD apparatus according to claim 8, wherein: a water channel (15) is arranged at the top of the upper cavity (3), and cooling liquid is arranged in the water channel (15).

10. The reaction chamber for an MPCVD apparatus according to any one of claims 5 to 9, wherein: a gap is arranged between the tuning ring (10) and the molybdenum table (1), the width of the gap is D, and the D belongs to [ H/3, H ].