CN218825144U

CN218825144U - Homogeneous decrement wafer photoresist film structure

Info

Publication number: CN218825144U
Application number: CN202222944558.8U
Authority: CN
Inventors: 高翔
Original assignee: Yuanming Zhaolian Supply Chain Technology Chongqing Co ltd
Current assignee: Yuanming Zhaolian Supply Chain Technology Chongqing Co ltd
Priority date: 2022-11-04
Filing date: 2022-11-04
Publication date: 2023-04-07
Anticipated expiration: 2032-11-04

Abstract

The utility model discloses a homogeneous decrement wafer photoresist film structure, including wafer body and photoresist film, the photoresist film coats the etching face at the wafer body through the centrifugation mode, the photoresist film centrifugation type becomes the tension flange, the upper surface of photoresist film coats the homogeneous membrane through the centrifugation mode; through setting up the homogeneity membrane for the photoresist membrane realizes effectual moisturizing, guarantees then that the coating that the photoresist can be more even at the upper surface of the wafer body, reduces the thickness that the edge drips the glue simultaneously, thereby reduces and glues the volume, and isolates photoresist membrane and air, protects.

Description

Homogeneous decrement wafer photoresist film structure

Technical Field

The utility model relates to a wafer coating film technical field, especially a homogeneity decrement wafer photoresist film structure.

Background

The photoresist coating process is an important link of the photoetching process in the manufacture of integrated circuit chips and generally comprises three steps: conveying the photoresist; accelerating the rotation of the substrate for glue homogenizing; rotating at a constant speed until the thickness is stabilized at a preset value. Photoresist thickness control is mainly related to the viscosity of the photoresist and the uniform rotation speed, and photoresist uniformity and defect density are related to numerous parameters: such as the exhaust flow and pressure of the glue module, control, photoresist temperature, humidity, etc.

The wafer rotation creates a centrifugal force that pushes the liquid photoresist toward the wafer edge, which decreases as the photoresist film becomes thinner. In addition, drying also results in evaporation of the photoresist solvent, resulting in a sharp increase in viscosity. Eventually, the increased viscous force exceeds the reduced centrifugal force and the photoresist stops flowing outward, causing the photoresist to fail to flood the entire substrate, thus requiring a high uniform rotational speed to be maintained to provide sufficient centrifugal force. However, a uniform rotational speed is not as fast as possible. On one hand, a large amount of photoresist can be thrown away at an excessively high rotating speed, so that waste is caused; on the other hand, centrifugal forces that produce a uniform photoresist coating also cause side effects: and (5) edge glue dripping. The edge drop is formed due to the surface tension of the photoresist-air interface at the edge, which is typically present within 1-2mm of the wafer exterior, and may be 10-30 times thicker than the rest of the photoresist film.

The presence of edge drops is detrimental to the cleanliness of subsequent photolithographic processing, and the process of grabbing the wafer at the edge can cause drops to fall off and cause severe particulate contamination. The traditional Reduced Resist Conditioning (RRC) photoresist dosage reduction process is an effective scheme aiming at the problem, namely, a layer of photoresist thinner is coated firstly, and plays a role of wetting the surface of a wafer in advance, so that the photoresist coated later can be more uniformly covered on the wafer, the thickness of edge photoresist drops is Reduced, and the photoresist dosage is Reduced.

However, even though the RRC photoresist dose reduction process is used to effectively reduce the thickness of Edge bead (Edge bead), the Edge bead is still present at the Edge of the wafer because the surface tension of the photoresist-air interface still exists, which is still thicker than the rest of the photoresist film.

We propose a uniform reduced wafer photoresist film structure for this purpose.

SUMMERY OF THE UTILITY MODEL

The utility model provides a homogeneity decrement wafer photoresist film structure to improve the above-mentioned problem of mentioning.

The utility model provides a following scheme:

a homogeneous and decrement wafer photoresist film structure comprises a wafer body and a photoresist film, wherein the photoresist film is coated on an etching surface of the wafer body in a centrifugal mode, the photoresist film is centrifugally formed into a tension flange, and a homogeneous film is coated on the upper surface of the photoresist film in a centrifugal mode.

Preferably, the diameter of the photoresist film is the same as the diameter of the wafer body.

Preferably, the diameter of the tension flange is 101% of the diameter of the photoresist film.

Preferably, the diameter of the homogeneous film is 99% of the diameter of the photoresist film.

Preferably, the thickness of the homogeneous film is one third to one half of the thickness of the photoresist film.

Preferably, the thickness of the tension flange is 1.1 to 1.2 times the thickness of the photoresist film.

Compared with the prior art, the beneficial effects of the utility model are that: through setting up the homogeneity membrane for the photoresist membrane realizes effectual moisturizing, guarantees then that the coating that the photoresist can be more even at the upper surface of the wafer body, reduces the thickness that the edge drips the glue simultaneously, thereby reduces and glues the volume, and isolates photoresist membrane and air, protects.

Drawings

Fig. 1 is a schematic perspective view of the present invention;

FIG. 2 is a schematic view of the structure of the present invention with a partial cross section;

in the figure: 1. wafer body, 2, photoresist film, 3, homogeneous film, 4, tension flange.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-2, the present invention provides a technical solution: a homogeneous and decrement wafer photoresist film structure comprises a wafer body 1 and a photoresist film 2, wherein the photoresist film 2 is coated on an etching surface of the wafer body 1 in a centrifugal mode, the photoresist film 2 is centrifugally formed into a tension flange 4, and the upper surface of the photoresist film 2 is coated with a homogeneous film 3 in a centrifugal mode.

Wafer body 1 is the rubber coating basis, the even coating of mode through centrifugal coating of photoresist film 2 is on wafer body 1 upper surface, plating homogeneous membrane 3 in the time of plating photoresist film 2, make photoresist film 2 moisturize through homogeneous membrane 3, then make the photoresist more homogeneous, make its thickness more even simultaneously, and reduce the emergence of edge glue dripping, tension flange 4 is through the membrane face tension of self, and realize holistic shrink, avoid the emergence of edge glue dripping.

Specifically, the diameter of the photoresist film 2 is the same as the diameter of the wafer body 1.

The diameter of the photoresist film 2 is the same as that of the wafer body 1, so that the effective integral covering of the photoresist film and the wafer body is realized, and the guarantee of the subsequent etching effect is ensured.

Specifically, the tension flange 4 has a diameter of 101% of the diameter of the photoresist film 2.

Through the diameter setting of tension flange 4, avoid the use of excessive photoresist to effectual assurance whole shrink effect.

Specifically, the diameter of the homogeneous film 3 is 99% of the diameter of the photoresist film 2.

By setting the diameter difference between the homogeneous film 3 and the photoresist film 2, the edge of the photoresist film 2 can be better transited to the tension flange 4, and a tension interface is formed.

Specifically, the thickness of the homogeneous film 3 is one third to one half of the thickness of the photoresist film 2.

Through the setting of 3 thicknesses of homogeneity membrane, assurance homogeneity effect that can be better to avoid the thickness of excessive extrusion photoresist membrane 2 too thin, influence subsequent photoetching.

Specifically, the thickness of the tension flange 4 is 1.1 to 1.2 times the thickness of the photoresist film 2.

By limiting the thickness of the tension flange 4, excessive tension interfaces are prevented from being generated, so that the purpose of saving photoresist is achieved by dripping the photoresist.

The working principle is as follows: when the device is used, the wafer body 1 is arranged on a glue plating device, the wafer body is rotated centrifugally, the photoresist is coated on the etching surface of the wafer body 1, the upper surface of the photoresist film 2 is coated with the homogeneous film 3 at the same time, the photoresist film 2 is moisturized through the homogeneous film 3, the centrifugal coating effect is ensured, and after the specified size is reached, the edge of the photoresist film 2 generates the tension flange 4 under the action of centrifugal force.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a homogeneity decrement wafer photoresist film structure, includes wafer piece body (1) and photoresist film (2), its characterized in that: the photoresist film (2) is coated on the etching surface of the wafer body (1) in a centrifugal mode, the photoresist film (2) is centrifugally formed into a tension flange (4), and the upper surface of the photoresist film (2) is coated with a homogeneous film (3) in a centrifugal mode.

2. The structure of claim 1, wherein: the diameter of the photoresist film (2) is the same as that of the wafer body (1).

3. The structure of claim 1, wherein: the diameter of the tension flange (4) is 101% of the diameter of the photoresist film (2).

4. The structure of claim 1, wherein: the diameter of the homogeneous film (3) is 99% of the diameter of the photoresist film (2).

5. The structure of claim 1, wherein: the thickness of the homogeneous film (3) is one third to one half of the thickness of the photoresist film (2).

6. The structure of claim 1, wherein: the thickness of the tension flange (4) is 1.1 to 1.2 times of the thickness of the photoresist film (2).