CN2184257Y

CN2184257Y - Coupler for semi-conductor light emission and testing

Info

Publication number: CN2184257Y
Application number: CN94203808U
Authority: CN
Inventors: 夏永伟; 滕学公; 李国花; 樊志军
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 1994-02-21
Filing date: 1994-02-21
Publication date: 1994-11-30
Anticipated expiration: 2004-02-21

Abstract

The utility model discloses a coupler for semi-conductor light emission and testing, which is manufactured using the multiple-thin-sheet crystal growth process and provided with the structure of vertical integration and light path self-aligning. The utility model is composed of a semiconductor light tasting element, transparent insulating crystal thin sheets and a semiconductor light emitting element superposed. The utility model has the advantages of process simplification, cost decrease, reliability and sensitivity increase, etc.

Description

Coupler for semi-conductor light emission and testing

The utility model relates to a kind of semi-conductive light emission and detection coupling assembly, particularly a kind of optical semiconductor emission and detection coupling assembly with vertically integrated and light path self-alignment structure.

Existing semi-conductive light emission all is to be dressed up by the discrete little chipset of semiconductor light emitting and light-sensitive device with surveying coupling assembly, their complex process, cost costliness, and the equal difficulty of performances such as reliability and sensitivity reaches desirable level.But it is on the other hand, existing with the semiconductor light emitting of many thin layers crystal growth technique manufacturings such as molecular beam epitaxy and the vapour deposition of metallorganic low pressure and the integrated package that light-detecting device does not form monolithic as yet.

The purpose of this utility model is for overcoming the above-mentioned defective of prior art, utilizes existing many thin layers crystal growth technique to design the luminous of a kind of single-slice integrated semiconductor simple in structure and surveys coupling assembly.

Realize that the technical measures that the utility model purpose is taked are: the emission of the utility model optical semiconductor is made up of with sensitive detection parts and transparent insulation crystal thin layer the semiconductor light emitting of many thin layers crystal growth with the detection coupling assembly, transparent insulation crystal book layer wherein is on a kind of device surface that is grown in wherein, another kind of device wherein then is to be grown on this transparent insulation crystal book layer, and the spy light face that makes the light-emitting area of light emitting semiconductor device wherein and optical semiconductor sensitive detection parts is only made electricity with this transparent insulation crystal thin layer and isolated and tightly align.

This optical semiconductor emission manufacturing of many thin layers crystal growth technique, that have vertically integrated and light path self-alignment structure and the detection coupling assembly of utilizing, can simplify production and installation step, reduce cost, more can improve reliability of products and sensitivity significantly.

Below in conjunction with accompanying drawing and embodiment the utility model is further described.

Accompanying drawing is that the light that embodiment of the utility model realizes with many thin layers of compound semiconductor crystal technique (molecular beam epitaxy technique) is launched and the cross-sectional view of surveying coupling assembly.

From the emission of embodiment optical semiconductor of the utility model shown in the accompanying drawing and the section schematic construction of surveying coupling assembly as seen, light-detecting device in the coupling assembly is the GaAs/AlGaAsn-i-p quantum well light-detecting device (1) of the growth of thin layer more than, is positioned at the bottom of coupling assembly.Doped with Al GaAs layer is not grown on the spy light face of quantum well light-detecting device (1) as transparent insulation crystal thin layer (2).The GaAs/AlGaAsp-n quantum well radiation device (3) of the growth of thin layer more than is positioned at the top of coupling assembly, and its light-emitting area is grown in not doped with Al GaAs(2 down) on.

GaAs/AlGaAsn-i-p quantum well light-detecting device (1) is at n ⁺0.5 micron n type GaAs resilient coating (5), 0.5 micron n type Al successively upwards grow on the type GaAs substrate (4) _0.3Ga _0.7As limits layer (6), comprises by 33 couples of do not mix 15 millimicrons of GaAs traps and 15 millimicrons of Al _0.3Ga _0.7Absorbed layer (7), 0.2 micron P type Al that the As potential barrier is formed _0.3Ga _0.7As limits layer (8) and 50 millimicrons of P ⁺Type GaAs ohmic contact layer (9) is formed.At n ⁺There is the metal electrode (10) of AuGe/Ni/Au the bottom surface of type GaAs substrate (4), at P ⁺Type GaAs ohmic contact layer (9) edge is deposited with two the silicon nitride passive film frames (11) at a distance of certain intervals, the P between two silicon nitride film frames ⁺Type GaAs(9) CrAu/Au metal electrode (12) is arranged on the surface, the P in silicon nitride film frame (11) ⁺Type GaAs(9) 2 microns doped with Al not of growth on the surface _0.3Ga _0.7As transparent insulation thin layer (2).

GaAs/AlGaAsp-n quantum well radiation device (3) is in doped with Al not _0.3Ga _0.70.1 micron p successively upwards grows on the As transparent insulating layer (2) ⁺Type GaAs ohmic contact layer (13), 0.5 micron P type Al _0.3Ga _0.7As limits layer (14), comprises by 5 couples of do not mix 10 millimicrons of GaAs traps and 10 millimicrons of Al _0.3Ga _0.7The active layer (15) that the As potential barrier is formed, 1 micron n type Al _0.3Ga _0.7Prague (Bragg) reflector (17) and 0.2 micron n that the centre wavelength of As qualification layer (16), 10 pairs of n type AlAs/GaAs compositions is 880 millimicrons ⁺Type GaAs ohmic contact layer (18) is formed.At p ⁺Type GaAs ohmic contact layer (13) edge is deposited with two the silicon nitride passive film frames (19) at a distance of certain intervals, the P between two silicon nitride film frames (19) ⁺Type GaAs(13) there is CrAu/Au metal electrode (20) on the surface, p type Al _0.3Ga _0.7As qualification layer (14) is grown in the p within the silicon nitride film frame (19) ⁺On the type GaAs layer (13).At n ⁺The metal electrode (21) that AuGe/Ni/Au is arranged on the type GaAs ohmic contact layer (18).

Claims

1, a kind of optical semiconductor emission and detection coupling assembly, it is characterized in that, it is made up of with sensitive detection parts and transparent insulation crystal thin layer the semiconductor light emitting of many thin layers crystal growth, described transparent insulation crystal thin layer is to be grown on described a kind of device surface, described another kind of device then is to be grown on the described transparent insulation crystal thin layer, and the spy light face of the light-emitting area of described light emitting semiconductor device and described optical semiconductor sensitive detection parts only tightly aligns with the isolation of described transparent insulation crystal thin layer work electricity.

2, according to described optical semiconductor emission of claim 1 and detection coupling assembly, it is characterized by, described optical semiconductor sensitive detection parts are the GaAs/AlGaAsn-i-p quantum well light-detecting devices that are positioned at the growth of thin layer more than of described coupling assembly below, described light emitting semiconductor device is the GaAs/AlGaAsp-n quantum well radiation device that is positioned at the growth of thin layer more than of described coupling assembly top, and the described transparent insulation crystal book layer of doing the electricity isolation between the spy light face of the light-emitting area of described photogenerator and described optical semiconductor sensitive detection parts is the unadulterated AlGaAs layer of one deck.

3, according to the emission of the described optical semiconductor of claim 2 with survey coupling assembly, it is characterized by, the GaAs/AlGaAsn-i-p quantum well light-detecting device of described many thin layers growths is by at n ⁺On the type GaAs substrate successively upwards the n type GaAs resilient coating of growth, n type AlGaAs limit layer, by many absorbed layers that not Doped GaAs trap and AlGaAs potential barrier are formed, p type AlGaAs qualification layer and p ⁺Type GaAs ohmic contact layer is formed, and at described n ⁺There is the metal electrode of AuGe/Ni/Au the bottom surface of type GaAs substrate, at described p ⁺The edge of type GaAs ohmic contact layer is deposited with two silicon nitride passive film frames at a distance of certain intervals, the described p between described two silicon nitride film frames ⁺Type GaAs ohmic contact laminar surface has the CrAu/Au metal electrode, the described p in described silicon nitride film frame ⁺The described not doped with Al GaAs transparent insulation thin layer of growth on the type GaAs ohmic contact aspect.

4, according to described optical semiconductor emission of claim 2 and detection coupling assembly, it is characterized by, the GaAs/AlGaAsp-n quantum well radiation device of described many thin layers growths is the p by the growth that makes progress successively on described not doped with Al GaAs transparent insulating layer ⁺Type GaAs ohmic contact layer, p type AlGaAs limit layer, by many active layers that not Doped GaAs trap and AlGaAs potential barrier are formed, n type AlGaAs qualification layer, by many reflector and n that n type AlAs/GaAs is formed ⁺Type GaAs ohmic contact layer is formed, and at described p ⁺Type GaAs ohmic contact layer edge is deposited with two silicon nitride passive film frames at a distance of certain intervals, the described p between described two silicon nitride film frames ⁺Type GaAs ohmic contact laminar surface has the CrAu/Au metal electrode, and it is the described p that is grown within the described silicon nitride film frame that described p type AlGaAs limits layer ⁺On the type GaAs ohmic contact layer, at described n ⁺The metal electrode that AuGe/Ni/Au is arranged on the type GaAs ohmic contact layer.