CN218203025U - Target material assembly for high-power magnetron sputtering - Google Patents
Target material assembly for high-power magnetron sputtering Download PDFInfo
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- CN218203025U CN218203025U CN202120620458.2U CN202120620458U CN218203025U CN 218203025 U CN218203025 U CN 218203025U CN 202120620458 U CN202120620458 U CN 202120620458U CN 218203025 U CN218203025 U CN 218203025U
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Abstract
The utility model provides a target assembly for high-power magnetron sputtering, which comprises a target and a back plate, wherein the target comprises a sputtering surface and a back surface, the back plate comprises a fixing surface and a cooling surface, the back surface of the target is connected with the fixing surface of the back plate, and the cooling surface of the back plate is provided with a trapezoidal groove; the side surface of the trapezoid groove is linearly inclined downwards along the edge of the back plate to the center direction of the back plate. A target subassembly for high power magnetron sputtering sets up the trapezoidal recess that has certain gradient at the cooling surface of backplate, can strengthen the cooling effect effectively, avoids the sputter face of target to take place the fracture.
Description
Technical Field
The utility model belongs to the technical field of semiconductor manufacturing, especially, relate to a target subassembly for high power magnetron sputtering.
Background
Magnetron sputtering means that electrons under the action of an electric field collide with argon atoms in the process of flying to a substrate, so that the argon atoms are ionized to generate argon positive ions and new electrons, the new electrons fly to the substrate, and the argon positive ions accelerate to fly to a target material serving as a cathode under the action of the electric field and bombard the surface of the target material at high energy, so that the target material is sputtered. Generally, the power of conventional magnetron sputtering is about 4kW, and with the continuous development of the semiconductor industry, people have higher and higher requirements for high-power magnetron sputtering. As the name suggests, the high-power magnetron sputtering refers to that in the magnetron sputtering process, pulses generated by very high voltage are used for impacting the surface of a target material, so that the ionization rate of the target material is greatly increased, the coating compactness is further improved, and the power of the high-power magnetron sputtering reaches 25kW. However, with the high-power magnetron sputtering, the temperature of the surface of the target material subjected to strong impact rapidly rises, and at the end of the high-power magnetron sputtering, cracks are easily generated on the sputtering surface of the target material, the uniformity of the coating film is damaged, and the sputtering environment is polluted.
In the magnetron sputtering coating process, the target assembly consists of a target meeting the sputtering performance and a back plate which is combined with the target and has certain strength, and the back plate not only plays a role in supporting when the target assembly is assembled to a sputtering base station, but also has the heat conduction function and is used for heat dissipation of the target in the magnetron sputtering process. In the high-power magnetron sputtering coating process, the working environment of the target assembly is very harsh, the target assembly is in a high-voltage electric field and a magnetic field with larger magnetic field intensity, the sputtering surface of the target is bombarded by various high-energy ions in a high-vacuum environment, so that the target is sputtered, and sputtered neutral target atoms or molecules are deposited on the substrate to form a film. With the high-power magnetron sputtering, the temperature of the target assembly can be rapidly increased, the heat of the target needs to be transferred and rapidly dissipated through a back plate in the target assembly, and the problems of deformation of the target, cracking of the target, influence on the coating quality of a substrate and the like are solved. Therefore, in the practical operation process of magnetron sputtering of the target assembly, a high-pressure cooling water impact measure is adopted on the back surface of the back plate, so that the heat dissipation effect of the target assembly is improved. Although the high-pressure cooling water impacts the back plate of the target assembly, the heat dissipation of the target can be effectively accelerated, and the coating quality is improved, in the practical use process, people find that the temperature rise rate of the target is accelerated along with the gradual reduction of the thickness of the sputtering surface of the target, and the high-pressure cooling water cannot take away the heat in time, so that the sputtering surface of the target is easy to crack at the final stage of high-power magnetron sputtering, the coating uniformity is damaged, and the sputtering environment is polluted.
In order to improve the cooling effect of the back plate, people form a water channel on the back surface of the back plate, which is in contact with the high-pressure cooling water, so that the water flow direction of the high-pressure cooling water is increased, and the contact surface of the back plate and the high-pressure cooling water is increased. For example, CN107805790A discloses a target assembly with a high specific surface area and a manufacturing method thereof, the target assembly comprises a target and a backing plate supporting the target, the backing plate has a cooling water contact area, and the area has archimedes spiral grooves machined by a machining device such as a numerically controlled milling machine. The specific surface area of the back plate in contact with the cooling water area is increased to more than 150% from 100%, and heat generated in the sputtering process of the target can be quickly led out by increasing the surface area of the back plate in contact with the cooling water area and water flow guiding, so that the surface temperature rise of the target is reduced, and the coating performance is improved. CN105408514A discloses a target assembly, wherein a plurality of circular grooves and at least one arcuate channel are opened on the back surface of a backing plate, the circular grooves are spaced apart from each other, and the at least one arcuate channel is cut through the circular grooves and extends from the central region to the edge region of the backing plate. However, in the practical use process, people find that cracks still occur on the sputtering surface of the target at the end stage of high-power magnetron sputtering, the uniformity of the coated film is damaged, and the sputtering environment is polluted.
In summary, there is a need to develop a novel target assembly for high power magnetron sputtering, which can effectively enhance the cooling effect and prevent the sputtering surface of the target from cracking.
SUMMERY OF THE UTILITY MODEL
Not enough to prior art exists, the utility model aims to provide a target subassembly for high power magnetron sputtering sets up the trapezoidal recess that has certain gradient at the cooling surface of backplate, can strengthen the cooling effect effectively, avoids the sputter face of target to take place the fracture.
The utility model aims to provide a target subassembly for high power magnetron sputtering, including target and backplate, the target includes sputtering face and back, the backplate includes stationary plane and cooling surface, the back of target is connected with the stationary plane of backplate, the cooling surface of backplate is seted up trapezoidal recess; the side surface of the trapezoid groove is linearly inclined downwards along the edge of the back plate to the center direction of the back plate.
The trapezoidal recess that has certain gradient is seted up at the cooling surface of backplate to the target subassembly, compares in Archimedes spiral slot, can further increase the cooling water volume, under certain velocity of flow, the target subassembly can hold great volume cooling water, can absorb more heats to can further strengthen the cooling effect, can avoid the sputter face of target to take place the fracture when being used for high power magnetron sputtering.
It is worth explaining, trapezoidal recess is followed the radial cross section of backplate presents trapezoidally, and follows the edge of backplate to the central direction of backplate, the side of trapezoidal recess is sharp downwardly sloping form.
In a preferred embodiment of the present invention, the inclination of the side of the trapezoidal groove is 1 to 30 degrees, for example, 1 degree, 5 degrees, 10 degrees, 15 degrees, 20 degrees, 25 degrees, or 30 degrees, but the inclination is not limited to the above-mentioned values, and other values not listed in the above-mentioned value range are also applicable.
It is worth explaining, the inclination of the side of the trapezoidal groove in the present invention refers to the included angle between the side of the trapezoidal groove and the cooling surface of the back plate.
As a preferred technical solution of the present invention, the ratio of the distance from the bottom of the trapezoidal groove to the cooling surface of the backplate to the thickness of the backplate is 1 (2-5), such as 1.
It is worth explaining, the utility model discloses the tank bottom of trapezoidal recess extremely the distance of the cooling surface of backplate indicates the degree of depth of trapezoidal recess, the thickness of backplate indicates distance between the stationary plane of backplate and the cooling surface.
In a preferred embodiment of the present invention, the back plate and the trapezoidal groove are both circular, and the ratio of the diameter of the trapezoidal groove to the diameter of the back plate is (0.5-0.9): 1, for example, 0.5.
It is worth explaining, the backplate with trapezoidal recess is circular, the bore of trapezoidal recess means the side of trapezoidal recess with the circular diameter that the cooling surface junction of backplate corresponds.
As the utility model discloses preferred technical scheme, trapezoidal recess set up in the center department of backplate.
It is worth explaining, the utility model discloses trapezoidal recess set up in the center department of backplate, promptly, the center of trapezoidal recess with the center coincidence of backplate.
As the utility model discloses preferred technical scheme, the side of trapezoidal recess sets up the side sandblast layer.
In a preferred embodiment of the present invention, the roughness of the side surface of the trapezoidal groove is 0.4 to 2 μm, for example, 0.4 μm, 0.6 μm, 0.8 μm, 1 μm, 1.2 μm, 1.5 μm, 1.7 μm, or 2 μm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range of values are also applicable.
As the utility model discloses preferred technical scheme, the bottom surface of trapezoidal recess sets up the bottom surface and spouts the sand bed.
In a preferred embodiment of the present invention, the roughness of the bottom surface of the trapezoidal groove is 0.4 to 2 μm, for example, 0.4 μm, 0.6 μm, 0.8 μm, 1 μm, 1.2 μm, 1.5 μm, 1.7 μm, or 2 μm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range of values are also applicable.
Compared with the prior art, the beneficial effects of the utility model are that:
the trapezoidal recess that has certain gradient is seted up at the cooling surface of backplate to the target subassembly, compares in Archimedes spiral slot, can further increase the cooling water volume, under certain velocity of flow, the target subassembly can hold great volume cooling water, can absorb more heats to can further strengthen the cooling effect, can avoid the sputter face of target to take place the fracture when being used for high power magnetron sputtering.
Drawings
Fig. 1 is a schematic structural diagram of a target assembly for high power magnetron sputtering according to the present invention;
wherein, 1-target material; 2-a back plate; 3-trapezoidal groove.
Detailed Description
Following conduct the utility model discloses preferred technical scheme does not nevertheless do the utility model provides a technical scheme's restriction can reach and realize better through following technical scheme the utility model discloses a technical purpose and beneficial effect.
In order to make the technical solution, objects and advantages of the present invention clearer, the present invention is described in further detail below with reference to specific embodiments and accompanying drawings. It is to be understood that the description of the embodiments herein is for purposes of illustration and explanation only and is not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. For the electrical and communication fields, either a wired connection or a wireless connection is possible. The specific meaning of the above terms in the present invention can be understood as a specific case by those skilled in the art.
As shown in fig. 1, the target assembly for high power magnetron sputtering of the present invention includes a target 1 and a back plate 2, the target 1 includes a sputtering surface and a back surface, the back plate 2 includes a fixing surface and a cooling surface, the back surface of the target 1 is connected to the fixing surface of the back plate 2, and the cooling surface of the back plate 2 is provided with a trapezoidal groove 3; wherein, along the edge of the backboard 2 to the center direction of the backboard 2, the side surface of the trapezoid groove 3 is in a straight line downward inclined shape.
Example 1
The embodiment provides a target assembly for high-power magnetron sputtering, which comprises a high-purity titanium target 1 with the purity of 99.99% and a back plate 2 made of aluminum alloy, wherein the target 1 comprises a sputtering surface and a back surface, the back plate 2 comprises a fixing surface and a cooling surface, the back surface of the target 1 is connected with the fixing surface of the back plate 2, and the cooling surface of the back plate 2 is provided with a trapezoidal groove 3; wherein, along the edge of the backboard 2 to the center direction of the backboard 2, the side surface of the trapezoid groove 3 is in a straight line downward inclined shape;
the inclination of the side surface of the trapezoidal groove 3 is 5 degrees, the ratio of the distance from the bottom of the trapezoidal groove 3 to the cooling surface of the backplate 2 to the thickness of the backplate 2 is 1.
When the target assembly of the embodiment is subjected to high-power magnetron sputtering with the power of 25kW, the cooling effect is good, the sputtering surface of the high-purity titanium target does not crack, and particularly, at the end of the high-power magnetron sputtering, the sputtering surface of the high-purity titanium target does not crack.
Example 2
The embodiment provides a target assembly for high-power magnetron sputtering, which comprises a high-purity titanium target 1 with the purity of 99.99% and a back plate 2 made of copper alloy, wherein the target 1 comprises a sputtering surface and a back surface, the back plate 2 comprises a fixing surface and a cooling surface, the back surface of the target 1 is connected with the fixing surface of the back plate 2, and the cooling surface of the back plate 2 is provided with a trapezoidal groove 3; the side surface of the trapezoidal groove 3 is inclined downwards in a straight line along the edge of the back plate 2 to the center direction of the back plate 2;
wherein, the gradient of the side of the trapezoid groove 3 is 15 degrees, the ratio of the distance from the bottom of the trapezoid groove 3 to the cooling surface of the backplate 2 to the thickness of the backplate 2 is 1.
When the target assembly is subjected to high-power magnetron sputtering with the power of 25kW, the cooling effect is good, the sputtering surface of the high-purity titanium target does not crack, and particularly, at the end of the high-power magnetron sputtering, the sputtering surface of the high-purity titanium target does not crack.
Example 3
The embodiment provides a target assembly for high-power magnetron sputtering, which comprises a high-purity copper target 1 with the purity of 99.9999% and a back plate 2 made of aluminum alloy, wherein the target 1 comprises a sputtering surface and a back surface, the back plate 2 comprises a fixing surface and a cooling surface, the back surface of the target 1 is connected with the fixing surface of the back plate 2, and the cooling surface of the back plate 2 is provided with a trapezoidal groove 3; wherein, along the edge of the backboard 2 to the center direction of the backboard 2, the side surface of the trapezoid groove 3 is in a straight line downward inclined shape;
wherein, the gradient of the side of the trapezoid groove 3 is 10 degrees, the ratio of the distance from the bottom of the trapezoid groove 3 to the cooling surface of the backplate 2 to the thickness of the backplate 2 is 1, the backplate 2 and the trapezoid groove 3 are both circular, the ratio of the caliber of the trapezoid groove 3 to the diameter of the backplate 2 is 0.8.
When the target assembly of the embodiment is subjected to high-power magnetron sputtering with the power of 25kW, the cooling effect is good, the sputtering surface of the high-purity titanium target does not crack, and particularly, at the end of the high-power magnetron sputtering, the sputtering surface of the high-purity titanium target does not crack.
Comparative example 1
The comparative example provides a target assembly, except that archimedean spiral grooves are arranged on the cooling surface of the back plate 2 made of aluminum alloy according to the arrangement rule described in embodiment 1 of CN107805790A, and other conditions are completely the same as those in embodiment 1.
The target material assembly of the comparative example is subjected to high-power magnetron sputtering with the power of 25kW, and the sputtering surface of the high-purity titanium target material cracks and obviously cracks at the end of the high-power magnetron sputtering.
To sum up, the trapezoidal recess that has certain gradient is seted up at the cooling surface of backplate to the target subassembly, compares in Archimedes spiral slot, can further increase the cooling water volume, under certain velocity of flow, the target subassembly can hold great volume cooling water, can absorb more heats to can further strengthen the cooling effect, can avoid the face of sputtering of target to take place the fracture when being used for high power magnetron sputtering.
The applicant states that the above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and those skilled in the art should understand that any changes or substitutions easily conceived by those skilled in the art within the technical scope of the present invention are all within the protection scope and the disclosure scope of the present invention.
Claims (9)
1. A target assembly for high-power magnetron sputtering is characterized by comprising a target and a back plate, wherein the target comprises a sputtering surface and a back surface, the back plate comprises a fixing surface and a cooling surface, the back surface of the target is connected with the fixing surface of the back plate, and the cooling surface of the back plate is provided with a trapezoidal groove; the side surface of the trapezoid groove is linearly inclined downwards along the edge of the back plate to the center direction of the back plate.
2. The target assembly for high power magnetron sputtering of claim 1 wherein the slope of the sides of the trapezoidal groove is 1-30 degrees.
3. The target assembly for high power magnetron sputtering of claim 1, wherein the ratio of the distance from the groove bottom of the trapezoidal groove to the cooling surface of the backing plate to the thickness of the backing plate is 1 (2-5).
4. The target assembly for high power magnetron sputtering of claim 1, wherein the backing plate and the trapezoidal groove are both circular, and the ratio of the caliber of the trapezoidal groove to the diameter of the backing plate is (0.5-0.9): 1.
5. The target assembly for high power magnetron sputtering of claim 1, wherein the trapezoidal groove opens at the center of the backing plate.
6. The target assembly for high power magnetron sputtering of claim 1 wherein the sides of the trapezoidal groove are provided with a lateral grit blast.
7. The target assembly for high power magnetron sputtering of claim 1 wherein the roughness of the sides of the trapezoidal groove is 0.4-2 μm.
8. The target assembly for high power magnetron sputtering of claim 1, wherein the bottom surface of the trapezoidal groove is provided with a bottom sand blasting layer.
9. The target assembly for high power magnetron sputtering of claim 1 wherein the roughness of the bottom surface of the trapezoidal groove is 0.4-2 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120620458.2U CN218203025U (en) | 2021-03-26 | 2021-03-26 | Target material assembly for high-power magnetron sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120620458.2U CN218203025U (en) | 2021-03-26 | 2021-03-26 | Target material assembly for high-power magnetron sputtering |
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| Publication Number | Publication Date |
|---|---|
| CN218203025U true CN218203025U (en) | 2023-01-03 |
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|---|---|---|---|
| CN202120620458.2U Active CN218203025U (en) | 2021-03-26 | 2021-03-26 | Target material assembly for high-power magnetron sputtering |
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| CN (1) | CN218203025U (en) |
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2021
- 2021-03-26 CN CN202120620458.2U patent/CN218203025U/en active Active
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