CN217982848U - Tritium source-based strip PIN junction type beta radiation volt effect isotope battery - Google Patents
Tritium source-based strip PIN junction type beta radiation volt effect isotope battery Download PDFInfo
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Abstract
The utility model provides a strip PIN junction type beta radiation volt effect isotope battery based on tritium source relates to isotope battery technical field, and the semiconductor opposition of two unit modules is connected and is supported through negative pole metal electrode, and semiconductor intrinsic layer and P + layer are the strip, have plated tritium base radiation source in side clearance department. The utility model discloses in the production volume beta particle of tritium-based radiation source incide back most in the semiconductor will fall into the exhaust layer, but the electron hole of production is collected roughly, can avoid tritium-based radiation source among the traditional scheme to lead to the problem of collection inefficiency owing to the penetration depth is low and fall on P + layer, in addition, the electron of the two-sided transmission of tritium-based radiation source all can be caught by the semiconductor, can realize the high-efficient radiation volt effect isotope battery based on the tritium source.
Description
Technical Field
The utility model relates to an isotope battery technical field especially relates to a strip PIN knot formula beta radiation volt effect isotope battery based on tritium source.
Background
In recent years, the development of micro-electromechanical devices in micro-electromechanical systems has been rapidly accelerated, but the further development of micro-electromechanical systems has been limited by the lack of micro-power supplies. In combination with the characteristics of micro-electromechanical devices, the requirements for micro-power supply generally include the following aspects: and (2) the working time is long. Due to the physical size and special functions of the micro-electro-mechanical equipment, the processing difficulty of the micro-electro-mechanical equipment is high. Therefore, once these devices are put into use, if the service life of the power supply is short, the operating state of the entire system is affected. However, reloading the micro power source not only affects the operation state of the original electronic device, but also increases the production cost. And (2) integration. The electronics of a microelectromechanical system are typically integrated. In order to achieve energy supply and convenient application, the micro power supply needs to be integrated with electronic devices to meet the requirements of physical size and stable operation of the micro electro mechanical system. And (3) miniaturization. The physical dimensions of microelectromechanical systems have evolved from the first millimeter scale, micrometer scale, to nanometer scale and even smaller. Therefore, the physical size of the micro-electromechanical devices and micro-power sources included in the micro-electromechanical systems also needs to reach the micrometer level, the nanometer level or even smaller. And (4) strong adaptability. Mems often need to work with other devices, and it is necessary to improve the environmental compatibility of micro power supplies. Conventional micro batteries mainly include micro fuel cells, micro chemical cells, micro solar cells, micro internal combustion engines, and the like. And (5) the power of the power supply is low. The power required by mems is typically in the order of milliwatts, microwatts, or even nanowatts, which can seriously affect the proper operation of the mems device if the output voltage and power of the micro power supply is too great. Therefore, a micro power supply with high energy density and meeting the low power requirement is necessary for the micro electro mechanical system. The research shows that: compared with the traditional micro battery, the beta radiation volt effect isotope battery has the characteristics of light weight, microminiaturization, integration, long service life, high energy density, stable output performance, low maintenance service frequency, no need of external sunlight and the like. Therefore, the beta radiation volt-effect isotope battery has received attention from researchers and is becoming a research hotspot of a micro power supply.
In 1913, mosley showed a beta-ray isotope battery for the first time, and the principle of the isotope battery is to directly convert beta-ray energy into electric energy. In 1937, becker and Kruppke observed the generation of electron-hole pairs when bombarding selenium photovoltaic elements with cathode electron rays, a phenomenon known as the volt effect of electrons. This is the first research work reporting electron emission volt effect. Until the 50 th and 60 th 20 th century, with the development of space technology, the research on isotope batteries has also gained attention and further research. In 1953, the first genuine isotope battery with beta radiation volt effect was born: rappaport et al use beta radiation source (90S/90Y) to irradiate silicon-based PN junction semiconductor device, generate electron-hole pairs in the semiconductor, and collect the generated electron-hole pairs with electrodes, completing the process of converting decay energy of beta radiation source into electric energy, and the battery is beta radiation volt effect isotope battery. From the 60, 70's of the 20 th century, beta-radiation volt-effect isotope batteries have begun to find applications and research in the fields of space exploration and medicine. Until 90 years in the 20 th century, with the rapid development of micro-electro-mechanical systems, the research of beta-radiation volt-effect isotope batteries has been rapidly developed.
The tritium has a half-life period of 12 years, is beta decay, has mild ray energy, is not easy to cause semiconductor damage, has low cost and is a preferred radioactive source in the field of isotope batteries. However, the beta penetration ability of tritium is weak, a tritium source is generally arranged close to a P layer or an N layer in a traditional mode, energy is quickly deposited after beta rays enter a semiconductor, but the beta rays do not enter a depletion layer of the semiconductor at the moment, the collection rate of generated electron holes is greatly reduced, and due to the fact that the separation effect of a built-in electric field does not exist, the generated electron hole pairs are easily compounded, so that the current of an isotope battery is difficult to improve when the tritium source is used, and the loss of generating efficiency is large.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a when to based on tritium source beta radiation volt effect isotope battery, solve behind the beta ray incident semiconductor and produce the difficult problem of collecting electron hole pair outside the exhaust area to improve the electric current of isotope battery, improve energy utilization efficiency.
The utility model discloses a solve above-mentioned technical problem, adopt following technical scheme to realize:
a strip PIN junction type beta radiation volt effect isotope battery based on tritium source is characterized in that: the semiconductor unit module comprises a semiconductor intrinsic layer (1), a heavily doped semiconductor P + layer (2) and a heavily doped semiconductor thin film N + layer (3).
Preferably, the top and the bottom of the semiconductor unit module are respectively provided with an anode metal electrode (7) and a cathode metal electrode (6), and the two semiconductor unit modules share one cathode metal electrode (6) and are oppositely arranged by taking the cathode metal electrode (6) as the center.
Preferably, the anode metal electrode (7) is plated on the top of the semiconductor P + layer (2), the side face of the semiconductor intrinsic layer (1) is plated with the tritium-based radioactive source (5), and a passivation layer (4) is arranged between the semiconductor intrinsic layer (1) and the tritium-based radioactive source (5).
Preferably, the passivation layer (4) covers the outer surface of the semiconductor intrinsic layer (1), the top surface of the semiconductor P + layer (2) and the top surface of the semiconductor thin film N + layer (3).
Preferably, the tritium-based radioactive source (5) is a titanium tritide radioactive source, and is in the form of a flake with a thickness of not more than 2 μm, or a powder particle with a diameter of 50-200 nm.
Preferably, the thickness of the semiconductor thin film N + layer (3) is less than or equal to 10 microns, the thickness of the cathode metal electrode (6) is more than or equal to 10 microns, and the cathode metal electrode (6) has a supporting function on semiconductors on two sides.
Preferably, the semiconductor P + layer (2) is loaded on the top of the semiconductor intrinsic layer (1), and the semiconductor thin film N + layer (3) is positioned on the bottom of the semiconductor intrinsic layer (1).
Preferably, the thickness of the semiconductor intrinsic layer (1) is 20-100 μm, the width is less than or equal to 20 μm, and the interval width between the adjacent semiconductor intrinsic layers (1) is less than or equal to 20 μm.
Preferably, the semiconductor intrinsic layer (1) is Si, gaAs, gaN or diamond.
Preferably, the semiconductor P + layer (2) can be formed by adopting an injection mode, and can also be formed by adopting an etching mode after epitaxy.
A production process of a PIN junction type beta radiation volt effect isotope battery based on a tritium source comprises the following steps:
the (100) GaAs is adopted as the semiconductor, the processing technology is mature, the impurities are few, and the crystal lattice quality is high. The semiconductor thin film N + layer (3) firstly extends a transition layer through the substrate, and then extends an N + layer, the doping concentration is 10E18, and the thickness is 5 mu m; further etching a stripe pattern of the semiconductor intrinsic layer (1) on the top of the semiconductor thin film N + layer (3), and growing the intrinsic layer to the thickness of 100 mu m; the semiconductor P + layer (2) was further loaded by ion beam implantation to a thickness of 1 μm and a doping concentration of 10E18. The width of the stripe-shaped intrinsic layer was 20 μm, and the pitch was 20 μm.
After the semiconductor P + layer (2) is loaded, siO is plated 2 Passivation layer, siO 2 The passivation layer covers the outer surface of the semiconductor intrinsic layer (1), the top surface of the semiconductor P + layer (2) and the top surface of the semiconductor thin film N + layer (3);
and further loading an anode metal electrode (7) which is Au/Ge/Ni/Au on the top of the semiconductor P + layer (2), forming the shape of the anode metal electrode (7) by coating photoresist, exposing, developing and removing the photoresist, and annealing to improve the quality of ohmic contact. The width of the anode metal electrode (7) is basically consistent with that of the semiconductor P + layer (2).
The radioactive source used by isotope battery is tritium-base radioactive source, and its chemical form is titanium tritide (TiHx) radioactive source, in which x is-1.6, and is plated on SiO 2 And considering self-absorption of tritium outside the passivation layer, the thickness is selected to be 0.7 mu m, and the thickness close to the saturation output is achieved. Tritium beta penetration through SiO 2 The passivation layer enters the intrinsic layer of the semiconductor, the P + layer and the N + layer are all heavily doped, so that the intrinsic layer is a depletion layer, beta particles bombard the semiconductor material to generate electron hole pairs, the electron hole pairs are separated from the depletion layer, the recombination probability is low, most of the beta particles are collected through the P + layer and the N + layer, and the current collection can be realized efficiently.
And finally, chemically dissolving the substrate at the bottom, loading a cathode metal electrode (6) at the bottom after the transition layer leaks, and loading the two semiconductor unit modules on the same cathode metal material together to ensure that the thickness is 25 mu m, wherein the cathode metal material plays a role in supporting the whole structure and ensures that the semiconductor element is not damaged.
And finally, the electrode is connected with an external circuit through a gold wire, so that the current output can be realized, and the theoretical power generation efficiency can be up to 4%. And after the modules are stacked through multiple layers, a larger power density can be formed in a unit volume.
The beneficial effects of the utility model are that:
the utility model has the advantages of because tritium-based radiation source arranges in the intrinsic layer side, and in the semiconductor of PIN structure, the intrinsic layer is almost all for the depletion layer, therefore, the beta particle of production incides in the semiconductor after most will fall into the depletion layer, the electron hole of production is collected by splitting back probability, can avoid tritium-based radiation source because penetration depth is low and fall into the problem that the depletion layer leads to collection efficiency low outside, can realize the high-efficient radiation volt effect isotope battery based on the tritium source.
The semiconductors of the two unit modules are oppositely arranged and are connected and supported through a cathode metal electrode, the intrinsic layer and the P + layer of the semiconductor are strip-shaped, and tritium-based radioactive sources are plated at the gaps on the side surfaces. The utility model discloses in the production volume beta particle of tritium-based radiation source incide back most in the semiconductor will fall into the exhaust layer, but the electron hole of production is collected roughly, can avoid tritium-based radiation source among the traditional scheme to lead to the problem of collection inefficiency owing to the penetration depth is low and fall on P + layer, in addition, the electron of the two-sided transmission of tritium-based radiation source all can be caught by the semiconductor, can realize the high-efficient radiation volt effect isotope battery based on the tritium source.
Drawings
Fig. 1 is a schematic structural diagram of a strip-shaped PIN junction type beta radiation volt effect isotope battery based on a tritium source according to the present invention;
reference numerals: 1-a semiconductor intrinsic layer; 2-a semiconductor P + layer; 3-a semiconductor thin film N + layer; 4-a passivation layer; 5-tritium-based radioactive sources; 6-a cathode metal electrode; 7-anode metal electrode.
Detailed Description
In order to make the technical means, creation features, achievement objects and functions of the present invention easy to understand, the present invention will be further explained below with reference to the following embodiments and the accompanying drawings. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative work belong to the protection scope of the present invention.
Specific embodiments of the present invention will be described below with reference to the accompanying drawings.
Example 1
Referring to fig. 1, the tritium source-based PIN junction type beta radiation volt effect isotope battery comprises a semiconductor unit module, wherein the semiconductor unit module is composed of a semiconductor intrinsic layer 1, a heavily doped semiconductor P + layer 2 and a heavily doped semiconductor thin film N + layer 3, an anode metal electrode 7 and a cathode metal electrode 6 are respectively arranged at the top and the bottom of the semiconductor unit module, the two semiconductor unit modules share one cathode metal electrode 6 and are oppositely arranged by taking the cathode metal electrode 6 as a center, the cathode metal electrode 6 plays a supporting role on the whole structure, the semiconductor P + layer 2 is loaded at the top of the semiconductor intrinsic layer 1, and the semiconductor thin film N + layer 3 is positioned at the bottom of the strip-shaped semiconductor intrinsic layer 1; an anode metal electrode 7 is plated on the top of the semiconductor P + layer 2, a tritium-based radioactive source 5 is plated on the side surface of the semiconductor intrinsic layer 1, and a passivation layer 4 is arranged between the semiconductor intrinsic layer 1 and the tritium-based radioactive source 5.
A production process of a PIN junction type beta radiation volt effect isotope battery based on a tritium source comprises the following steps:
the (100) GaAs is adopted as the semiconductor, the processing technology is mature, the impurities are few, and the crystal lattice quality is high. The semiconductor film N + layer 3 firstly extends a transition layer through the substrate, then extends an N + layer, the doping concentration is 10E18, and the thickness is 5 mu m; further etching a stripe pattern of the semiconductor intrinsic layer 1 on the top of the semiconductor thin film N + layer 3, and growing the intrinsic layer to the thickness of 100 mu m; the semiconductor P + layer 2 was further loaded by ion beam implantation with a thickness of 1 μm and a doping concentration of 10E18 each. The width of the stripe-shaped intrinsic layer was 20 μm, and the pitch was 20 μm.
After the semiconductor P + layer 2 is loaded, siO is plated 2 Passivation layer, siO 2 The passivation layer covers the outer surface of the semiconductor intrinsic layer 1, the top surface of the semiconductor P + layer 2 and the top surface of the semiconductor thin film N + layer (3);
further, an anode metal electrode 7 is loaded on the top of the semiconductor P + layer 2, is Au/Ge/Ni/Au, is formed into the shape of the anode metal electrode 7 through photoresist coating, exposure, development and photoresist removal, and is annealed to improve the quality of ohmic contact. The width of the anode metal electrode 7 substantially coincides with the width of the semiconductor P + layer 2.
The radioactive source used by isotope battery is tritium-base radioactive source, and its chemical form is titanium tritide (TiHx) radioactive source, in which x is-1.6, and is plated on SiO 2 And considering self-absorption of tritium outside the passivation layer, the thickness is selected to be 0.7 mu m, and the thickness close to the saturation output is achieved. Tritium beta penetration through SiO 2 The passivation layer enters the intrinsic layer of the semiconductor, the P + layer and the N + layer are all heavily doped, so that the intrinsic layer is a depletion layer, beta particles bombard the semiconductor material to generate electron-hole pairs, the electron-hole pairs are separated from the depletion layer, the recombination probability is low, most of the beta particles are collected through the P + layer and the N + layer, and the current collection can be realized more efficiently.
And finally, chemically dissolving the substrate at the bottom, loading a cathode metal electrode 6 at the bottom after the transition layer leaks, loading the two semiconductor unit modules on the same cathode metal material with the thickness of 25 mu m, wherein the cathode metal material plays a role in supporting the whole structure and ensures that the semiconductor element is not damaged.
And finally, the electrode is connected with an external circuit through a gold wire, so that the current output can be realized, and the theoretical power generation efficiency can be up to 4%. And after the modules are stacked through multiple layers, a larger power density can be formed in a unit volume.
The foregoing shows and describes the basic principles, essential features, and advantages of the invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only preferred examples of the present invention, and is not intended to limit the present invention, and that the present invention can have various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications all fall into the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A strip PIN junction type beta radiation volt effect isotope battery based on a tritium source is characterized in that: the semiconductor unit module is composed of a semiconductor intrinsic layer (1), a heavily doped semiconductor P + layer (2) and a heavily doped semiconductor thin film N + layer (3);
the top and the bottom of the semiconductor unit module are respectively provided with an anode metal electrode (7) and a cathode metal electrode (6), the two semiconductor unit modules share one cathode metal electrode (6), and the two semiconductor unit modules are oppositely arranged by taking the cathode metal electrode (6) as a center.
2. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the anode metal electrode (7) is plated on the top of the semiconductor P + layer (2), the side face of the semiconductor intrinsic layer (1) is plated with the tritium-based radioactive source (5), and a passivation layer (4) is arranged between the semiconductor intrinsic layer (1) and the tritium-based radioactive source (5).
3. A tritium source-based strip-PIN junction beta radiant volt effect isotope battery as claimed in claim 2, wherein: the passivation layer (4) covers the outer surface of the semiconductor intrinsic layer (1), the top surface of the semiconductor P + layer (2) and the top surface of the semiconductor thin film N + layer (3).
4. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 2, characterized in that: the tritium-based radioactive source (5) is a titanium tritide radioactive source and is in a sheet shape with the thickness not more than 2 mu m or powder particles with the diameter of 50-200 nm.
5. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the thickness of the semiconductor film N + layer (3) is less than or equal to 10 mu m, the thickness of the cathode metal electrode (6) is more than or equal to 10 mu m, and the cathode metal electrode (6) has a supporting function on semiconductors on two sides.
6. A tritium source-based strip-PIN junction beta radiant volt effect isotope battery as claimed in claim 1, wherein: the semiconductor P + layer (2) is loaded on the top of the semiconductor intrinsic layer (1), and the semiconductor thin film N + layer (3) is located at the bottom of the semiconductor intrinsic layer (1).
7. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the thickness of the semiconductor intrinsic layers (1) is 20-100 mu m, the width of the semiconductor intrinsic layers is less than or equal to 20 mu m, and the interval width between adjacent semiconductor intrinsic layers (1) is less than or equal to 20 mu m.
8. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the semiconductor intrinsic layer (1) is Si, gaAs, gaN or diamond.
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| CN202221807398.6U CN217982848U (en) | 2022-07-13 | 2022-07-13 | Tritium source-based strip PIN junction type beta radiation volt effect isotope battery |
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| CN202221807398.6U CN217982848U (en) | 2022-07-13 | 2022-07-13 | Tritium source-based strip PIN junction type beta radiation volt effect isotope battery |
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Address after: 266043 No. 1, Loushan Road, Licang District, Qingdao, Shandong Patentee after: Neutron Times (Qingdao) Innovation Technology Co.,Ltd. Address before: No. 1 Loushan Road, Licang District, Qingdao City, Shandong Province 266041 Patentee before: Qingdao Yuandongxin Energy Technology Co.,Ltd. |
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