CN115050503A - Tritium source-based strip PIN junction type beta radiation volt effect isotope battery - Google Patents
Tritium source-based strip PIN junction type beta radiation volt effect isotope battery Download PDFInfo
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Abstract
The invention provides a strip PIN junction type beta radiation volt effect isotope battery based on a tritium source, and relates to the technical field of isotope batteries. In the invention, most of generated beta particles of the tritium-based radioactive source fall into a depletion layer after being incident into a semiconductor, generated electron hole pairs can be collected at a large rate, the problem of low collection efficiency caused by the fact that the tritium-based radioactive source falls on a P + layer due to low penetration depth in the traditional scheme can be solved, in addition, electrons emitted by the two sides of the tritium-based radioactive source can be captured by the semiconductor, and the high-efficiency radiation volt effect isotope battery based on the tritium source can be realized.
Description
Technical Field
The invention relates to the technical field of isotope batteries, in particular to a tritium source-based strip PIN junction type beta radiation volt effect isotope battery.
Background
In recent years, the development of micro-electromechanical devices in micro-electromechanical systems has been rapidly accelerated, but the further development of micro-electromechanical systems has been limited by the lack of micro-power supplies. In combination with the features of the micro-electromechanical device, the requirements for micro-power supply generally include the following aspects: (2) the working time is long. Due to the physical size and special functions of the micro-electromechanical device, the processing difficulty of the micro-electromechanical device is higher. Therefore, once these devices are put into use, if the service life of the power supply is short, the operating state of the entire system is affected. However, reloading the micro power source not only affects the operation state of the original electronic device, but also increases the production cost. (2) And (6) integration. The electronics of a microelectromechanical system are typically integrated. To achieve energy supply and ease of application, micro power supplies need to be integrated with electronics to accommodate the physical size and stable operation of mems. (3) And (4) miniaturization. The physical dimensions of microelectromechanical systems have evolved from the first millimeter scale, micrometer scale, to nanometer scale and even smaller. Therefore, the physical size of the micro-electromechanical devices and micro-power sources included in the micro-electromechanical systems also needs to reach the micrometer level, the nanometer level or even smaller. (4) And the adaptability is strong. Mems often need to work with other devices, and it is necessary to improve the environmental compatibility of micro power supplies. Conventional micro batteries mainly include micro fuel cells, micro chemical cells, micro solar cells, micro internal combustion engines, and the like. (5) The power of the power supply is low. The power required by the mems is typically in the milliwatt, microwatt or even nanowatt range, which can seriously affect the normal operation of the mems device if the output voltage and power of the micro power supply is too high. Therefore, a micro power supply with high energy density and meeting the low power requirement is necessary for the micro electro mechanical system. The research shows that: compared with the traditional micro battery, the beta radiation volt effect isotope battery has the characteristics of light weight, micromation, integration, long service life, high energy density, stable output performance, low maintenance service frequency, no need of external sunlight and the like. Therefore, the beta radiation volt-effect isotope battery has received attention from researchers and is becoming a research hotspot of a micro power supply.
In 1913, Mosley showed a beta-ray isotope battery for the first time, and the principle of the isotope battery is to directly convert beta-ray energy into electric energy. In 1937, Becker and Kruppke observed the generation of electron-hole pairs when bombarding selenium photovoltaic elements with cathode electron rays, a phenomenon known as the volt effect of electrons. This is the first research work reporting electron emission volt effects. Until the 50 th and 60 th 20 th century, with the development of space technology, the research on isotope batteries has also gained attention and further research. In 1953, the first genuine isotope battery with beta radiation volt effect was born: rappaport et al use beta radiation source (90S/90Y) to irradiate silicon-based PN junction semiconductor device, generate electron-hole pairs in the semiconductor, and collect the generated electron-hole pairs with electrodes, completing the process of converting decay energy of beta radiation source into electric energy, and the battery is beta radiation volt effect isotope battery. From the 60, 70's of the 20 th century, beta-radiation volt-effect isotope batteries have begun to find applications and research in the fields of space exploration and medicine. Until 90 years in the 20 th century, with the rapid development of micro-electro-mechanical systems, the research of beta-radiation volt-effect isotope batteries has been rapidly developed.
The tritium has a half-life period of 12 years, is beta decay, has mild ray energy, is not easy to cause semiconductor damage, has low cost and is a preferred radioactive source in the field of isotope batteries. However, the beta penetration ability of tritium is weak, a tritium source is generally arranged close to a P layer or an N layer in a traditional mode, energy is quickly deposited after beta rays enter a semiconductor, but the beta rays do not enter a depletion layer of the semiconductor at the moment, the collection rate of generated electron holes is greatly reduced, and due to the fact that the separation effect of a built-in electric field does not exist, the generated electron hole pairs are easily compounded, so that the current of an isotope battery is difficult to improve when the tritium source is used, and the loss of generating efficiency is large.
Disclosure of Invention
The invention aims to provide a method for solving the problem that electron-hole pairs are difficult to collect and are generated outside a depletion region after beta rays are incident into a semiconductor when a tritium source-based beta radiation volt effect isotope battery is used, so that the current of the isotope battery is improved, and the energy utilization efficiency is improved.
In order to solve the technical problems, the invention adopts the following technical scheme:
a strip PIN junction type beta radiation volt effect isotope battery based on a tritium source is characterized in that: the semiconductor unit module comprises a semiconductor intrinsic layer (1), a heavily doped semiconductor P + layer (2) and a heavily doped semiconductor thin film N + layer (3), wherein the top and the bottom of the semiconductor unit module are respectively provided with an anode metal electrode (7) and a cathode metal electrode (6), the two semiconductor unit modules share one cathode metal electrode (6) and are oppositely arranged by taking the cathode metal electrode (6) as the center;
the semiconductor P + layer (2) is loaded on the top of the semiconductor intrinsic layer (1), and the semiconductor thin film N + layer (3) is positioned at the bottom of the semiconductor intrinsic layer (1);
the anode metal electrode (7) is plated on the top of the semiconductor P + layer (2), the side face of the semiconductor intrinsic layer (1) is plated with the tritium-based radioactive source (5), and a passivation layer (4) is arranged between the semiconductor intrinsic layer (1) and the tritium-based radioactive source (5).
Preferably, the passivation layer (4) covers the outer surface of the semiconductor intrinsic layer (1), the top surface of the semiconductor P + layer (2) and the top surface of the semiconductor thin film N + layer (3).
Preferably, the tritium-based radioactive source (5) is a titanium tritide radioactive source, and is in the shape of a flake with a thickness of not more than 2 μm or a powder particle with a diameter of 50-200 nm.
Preferably, the thickness of the semiconductor intrinsic layer (1) is 20-100 μm, the width is less than or equal to 20 μm, and the interval width between the adjacent semiconductor intrinsic layers (1) is less than or equal to 20 μm.
Preferably, the thickness of the semiconductor thin film N + layer (3) is less than or equal to 10 microns, the thickness of the cathode metal electrode (6) is greater than or equal to 10 microns, and the cathode metal electrode (6) has a supporting function on semiconductors on two sides.
Preferably, the semiconductor intrinsic layer (1) may be Si, GaAs, GaN or diamond.
Preferably, the semiconductor P + layer (2) can be formed by means of implantation or by means of post-epitaxial etching.
A production process of a PIN junction type beta radiation volt effect isotope battery based on a tritium source comprises the following steps:
the (100) GaAs is adopted as the semiconductor, the processing technology is mature, the impurities are few, and the crystal lattice quality is high. The semiconductor film N + layer (3) firstly extends a transition layer through the substrate, then extends the N + layer, the doping concentration is 10E18, and the thickness is 5 mu m; further etching a stripe pattern of the semiconductor intrinsic layer (1) on the top of the semiconductor thin film N + layer (3), and growing the intrinsic layer to the thickness of 100 mu m; the semiconductor P + layer (2) was further loaded by ion beam implantation to a thickness of 1 μm and a doping concentration of 10E18 each. The width of the stripe-shaped intrinsic layer was 20 μm and the pitch was 20 μm.
After the semiconductor P + layer (2) is loaded, SiO is plated 2 Passivation layer, SiO 2 The passivation layer covers the outer surface of the semiconductor intrinsic layer (1), the top surface of the semiconductor P + layer (2) and the top surface of the semiconductor thin film N + layer (3);
and further loading an anode metal electrode (7) which is Au/Ge/Ni/Au on the top of the semiconductor P + layer (2), forming the shape of the anode metal electrode (7) by coating photoresist, exposing, developing and removing the photoresist, and annealing to improve the quality of ohmic contact. The width of the anode metal electrode (7) is basically consistent with that of the semiconductor P + layer (2).
The radioactive source used by isotope battery is tritium-based radioactive source, and the chemical form is titanium tritide (TiHx) radioactive source, in which x is-1.6, and the radioactive source is plated on SiO 2 And considering self-absorption of tritium outside the passivation layer, the thickness is selected to be 0.7 mu m, and the thickness close to the saturated output is achieved. Tritiated beta-particle penetration through SiO 2 The passivation layer enters the intrinsic layer of the semiconductor, the P + layer and the N + layer are all heavily doped, so that the intrinsic layer is a depletion layer, beta particles bombard the semiconductor material to generate electron hole pairs, the electron hole pairs are separated from the depletion layer, the recombination probability is low, most of the beta particles are collected through the P + layer and the N + layer, and the current collection can be realized efficiently.
And finally, chemically dissolving the substrate at the bottom, loading a cathode metal electrode (6) at the bottom after the transition layer leaks, loading the two semiconductor unit modules on the same cathode metal material with the thickness of 25 mu m, wherein the cathode metal material plays a role in supporting the whole structure and ensures that the semiconductor element is not damaged.
And finally, the electrode is connected with an external circuit through a gold wire, so that the current output can be realized, and the theoretical power generation efficiency can be up to 4%. And after the modules are stacked through multiple layers, a larger power density can be formed in a unit volume.
The invention has the beneficial effects that:
the invention has the advantages that because the tritium-based radioactive source is arranged on the side surface of the intrinsic layer, and almost all the intrinsic layer is a depletion layer in the PIN structure semiconductor, most of generated beta particles fall into the depletion layer after being incident into the semiconductor, generated electron holes are collected at a high probability after being split, the problem of low collection efficiency caused by the fact that the tritium-based radioactive source falls out of the depletion layer due to low penetration depth can be avoided, and the high-efficiency radiation volt-effect isotope battery based on the tritium source can be realized.
The semiconductors of the two unit modules are oppositely arranged and are connected and supported through a cathode metal electrode, the intrinsic layer and the P + layer of the semiconductor are strip-shaped, and tritium-based radioactive sources are plated at the gaps on the side surfaces. In the invention, most of generated beta particles of the tritium-based radioactive source fall into a depletion layer after being incident into a semiconductor, generated electron hole pairs can be collected at a large rate, the problem of low collection efficiency caused by the fact that the tritium-based radioactive source falls on a P + layer due to low penetration depth in the traditional scheme can be solved, in addition, electrons emitted by the two sides of the tritium-based radioactive source can be captured by the semiconductor, and the high-efficiency radiation volt effect isotope battery based on the tritium source can be realized.
Drawings
FIG. 1 is a schematic structural diagram of a strip PIN junction type beta radiation volt effect isotope battery based on a tritium source;
reference numerals: 1-a semiconductor intrinsic layer; 2-a semiconductor P + layer; 3-a semiconductor thin film N + layer; 4-a passivation layer; 5-tritium-based radioactive sources; 6-a cathodic metal electrode; 7-anode metal electrode.
Detailed Description
In order to make the technical means, the original characteristics, the achieved purposes and the effects of the invention easily understood, the invention is further described below with reference to the specific embodiments and the attached drawings, but the following embodiments are only the preferred embodiments of the invention, and not all embodiments. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative efforts belong to the protection scope of the present invention.
Specific embodiments of the present invention are described below with reference to the accompanying drawings.
Example 1
Referring to fig. 1, the tritium source-based PIN junction type beta radiation volt effect isotope battery comprises a semiconductor unit module, wherein the semiconductor unit module is composed of a semiconductor intrinsic layer 1, a heavily doped semiconductor P + layer 2 and a heavily doped semiconductor thin film N + layer 3, an anode metal electrode 7 and a cathode metal electrode 6 are respectively arranged at the top and the bottom of the semiconductor unit module, the two semiconductor unit modules share one cathode metal electrode 6 and are oppositely arranged by taking the cathode metal electrode 6 as a center, the cathode metal electrode 6 plays a supporting role on the whole structure, the semiconductor P + layer 2 is loaded at the top of the semiconductor intrinsic layer 1, and the semiconductor thin film N + layer 3 is positioned at the bottom of the strip-shaped semiconductor intrinsic layer 1; an anode metal electrode 7 is plated on the top of the semiconductor P + layer 2, a tritium-based radioactive source 5 is plated on the side surface of the semiconductor intrinsic layer 1, and a passivation layer 4 is arranged between the semiconductor intrinsic layer 1 and the tritium-based radioactive source 5.
A production process of a PIN junction type beta radiation volt effect isotope battery based on a tritium source comprises the following steps:
the (100) GaAs is adopted as the semiconductor, the processing technology is mature, the impurities are few, and the crystal lattice quality is high. The semiconductor film N + layer 3 firstly extends a transition layer through the substrate, then extends an N + layer, the doping concentration is 10E18, and the thickness is 5 mu m; further etching a stripe pattern of the semiconductor intrinsic layer 1 on the top of the semiconductor thin film N + layer 3, and growing the intrinsic layer to a thickness of 100 μm; the semiconductor P + layer 2 was further loaded by ion beam implantation to a thickness of 1 μm and a doping concentration of 10E18 each. The width of the stripe-shaped intrinsic layer was 20 μm and the pitch was 20 μm.
After the semiconductor P + layer 2 is loaded, SiO is plated 2 Passivation layer, SiO 2 The passivation layer covers the outer surface of the semiconductor intrinsic layer 1, the top surface of the semiconductor P + layer 2 and the top surface of the semiconductor thin film N + layer (3);
further, an anode metal electrode 7 is loaded on the top of the semiconductor P + layer 2, is Au/Ge/Ni/Au, is formed into the shape of the anode metal electrode 7 through photoresist coating, exposure, development and photoresist removal, and is annealed to improve the quality of ohmic contact. The width of the anode metal electrode 7 substantially coincides with the width of the semiconductor P + layer 2.
The radioactive source used by isotope battery is tritium-based radioactive source, and the chemical form is titanium tritide (TiHx) radioactive source, in which x is-1.6, and the radioactive source is plated on SiO 2 The thickness of the passivation layer is 0 by considering self-absorption of tritium7 μm to a thickness close to the saturation output. Tritiated beta-particle penetration through SiO 2 The passivation layer enters the intrinsic layer of the semiconductor, the P + layer and the N + layer are all heavily doped, so that the intrinsic layer is a depletion layer, beta particles bombard the semiconductor material to generate electron hole pairs, the electron hole pairs are separated from the depletion layer, the recombination probability is low, most of the beta particles are collected through the P + layer and the N + layer, and the current collection can be realized efficiently.
And finally, chemically dissolving the substrate at the bottom, loading a cathode metal electrode 6 at the bottom after the transition layer leaks, loading the two semiconductor unit modules on the same cathode metal material with the thickness of 25 mu m, wherein the cathode metal material plays a role in supporting the whole structure and ensures that the semiconductor element is not damaged.
And finally, the electrode is connected with an external circuit through a gold wire, so that the current output can be realized, and the theoretical power generation efficiency can be up to 4%. And after the modules are stacked through multiple layers, a larger power density can be formed in a unit volume.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A strip PIN junction type beta radiation volt effect isotope battery based on a tritium source is characterized in that:
the semiconductor unit module comprises a semiconductor intrinsic layer (1), a heavily doped semiconductor P + layer (2) and a heavily doped semiconductor thin film N + layer (3), wherein the top and the bottom of the semiconductor unit module are respectively provided with an anode metal electrode (7) and a cathode metal electrode (6), the two semiconductor unit modules share one cathode metal electrode (6) and are oppositely arranged by taking the cathode metal electrode (6) as the center;
the semiconductor P + layer (2) is loaded on the top of the semiconductor intrinsic layer (1), and the semiconductor thin film N + layer (3) is positioned at the bottom of the semiconductor intrinsic layer (1);
the anode metal electrode (7) is plated on the top of the semiconductor P + layer (2), the side face of the semiconductor intrinsic layer (1) is plated with the tritium-based radioactive source (5), and a passivation layer (4) is arranged between the semiconductor intrinsic layer (1) and the tritium-based radioactive source (5).
2. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the passivation layer (4) covers the outer surface of the semiconductor intrinsic layer (1), the top surface of the semiconductor P + layer (2) and the top surface of the semiconductor thin film N + layer (3).
3. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the tritium-based radioactive source (5) is a titanium tritide radioactive source and is in the shape of a sheet with the thickness of not more than 2 mu m or powder particles with the diameter of 50-200 nm.
4. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the thickness of the semiconductor intrinsic layers (1) is 20-100 mu m, the width of the semiconductor intrinsic layers is less than or equal to 20 mu m, and the interval width between adjacent semiconductor intrinsic layers (1) is less than or equal to 20 mu m.
5. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the thickness of the semiconductor film N + layer (3) is less than or equal to 10 mu m, the thickness of the cathode metal electrode (6) is more than or equal to 10 mu m, and the cathode metal electrode (6) has a supporting function on semiconductors on two sides.
6. A tritium source-based bar PIN junction type beta radiant volt effect isotope battery as claimed in claim 1, characterized in that: the semiconductor intrinsic layer (1) is Si, GaAs, GaN or diamond.
7. A process for the production of a tritium source-based bar-shaped PIN junction type beta radiation volt effect isotope battery as claimed in claim 1, characterized by the steps of:
the semiconductor film N + layer (3) firstly extends a transition layer through the substrate, and then extends the semiconductor film N + layer (3), the doping concentration is 10E18, and the thickness is 5 mu m; further etching a stripe pattern of the semiconductor intrinsic layer (1) on the top of the semiconductor thin film N + layer (3), and growing the intrinsic layer to the thickness of 100 mu m; further loading the semiconductor P + layer (2) by ion beam implantation, wherein the thickness is 1 mu m, and the doping concentration is 10E 18; the width of the strip intrinsic layer is 20 μm, and the distance between the strip intrinsic layers is 20 μm;
after the semiconductor P + layer (2) is loaded, SiO is plated 2 Passivation layer, SiO 2 The passivation layer covers the outer surface of the semiconductor intrinsic layer (1), the top surface of the semiconductor P + layer (2) and the top surface of the semiconductor thin film N + layer (3);
further loading an anode metal electrode (7) on the top of the semiconductor P + layer (2), wherein the width of the anode metal electrode (7) is consistent with that of the semiconductor P + layer (2);
the radioactive source used by isotope battery is tritium-based radioactive source, the chemical form is titanium tritide radioactive source, the chemical formula is TiHx, wherein x is-1.6, and the radioactive source is plated on SiO 2 Considering self-absorption of tritium outside the passivation layer, the thickness is selected to be 0.7 mu m, and the thickness close to the thickness of saturated output is achieved; tritiated beta-particle penetration through SiO 2 The passivation layer enters the intrinsic layer of the semiconductor, the P + layer and the N + layer are all heavily doped, so that the intrinsic layer is a depletion layer, beta particles bombard the semiconductor material to generate electron hole pairs, the electron hole pairs are separated from the depletion layer, the recombination probability is low, most of the beta particles are collected through the P + layer and the N + layer, and efficient current collection is realized;
chemically dissolving the substrate at the bottom, loading a cathode metal electrode (6) at the bottom after the transition layer leaks out, loading the two semiconductor unit modules on the same cathode metal material together, wherein the thickness of the cathode metal material is 25 mu m, and the cathode metal material plays a role in supporting the whole structure to ensure that the semiconductor element is not damaged;
and finally, the electrode is connected with an external circuit through a gold wire, so that the current output is realized, and the theoretical power generation efficiency is more than 4%.
8. The production process of the strip PIN junction type beta-radiation volt effect isotope battery based on the tritium source as claimed in claim 7, wherein the anode metal electrode (7) is Au/Ge/Ni/Au, the shape of the anode metal electrode (7) is formed by coating photoresist, exposing, developing and removing the photoresist, and annealing is performed to improve the quality of ohmic contact.
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