CN217628720U - Crystal cooling device - Google Patents
Crystal cooling device Download PDFInfo
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- CN217628720U CN217628720U CN202221658805.1U CN202221658805U CN217628720U CN 217628720 U CN217628720 U CN 217628720U CN 202221658805 U CN202221658805 U CN 202221658805U CN 217628720 U CN217628720 U CN 217628720U
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Abstract
The utility model discloses a crystal cooling device, which comprises a graphite sleeve and a water cooling jacket with a hollow interlayer, wherein the graphite sleeve is coaxially arranged from inside to outside; an axial through hole for a crystal pulling rod to pass through is formed in the center of the graphite sleeve; the inner wall of the graphite sleeve is provided with a graphene coating; the cooling device further comprises an argon gas system; and the argon system conveys argon gas for cooling downwards along the outer wall of the water cooling jacket. According to the method, the crystal rod can rapidly pass through a characteristic temperature range (1100-1070 ℃) for cavity type defect growth nucleation through a triple cooling system of graphene heat radiation, water cooling of a water cooling jacket and argon cooling, and the crystal quality is effectively improved.
Description
Technical Field
The utility model belongs to the technical field of semiconductor silicon crystal manufacturing, concretely relates to crystal cooling device.
Background
The main substrate material of semiconductor devices is monocrystalline silicon, most of which is manufactured by Czochralski method, and the minimization trend of electronic components nowadays makes the defect requirements of monocrystalline silicon used as the substrate material increasingly strict, so how to reduce defects is a problem that needs to be overcome at present.
When the melt is crystallized into single crystal silicon in the crystal pulling process of the Czochralski method, intrinsic point defects of vacancies and interstitial atoms are formed, when the single crystal silicon leaves a solid-liquid interface for cooling, V-type single crystal or I-type single crystal of excessive vacancies and interstitial intrinsic defects can be formed according to different growth conditions, if the thermal field distribution in the crystal pulling furnace is adjusted to reduce the temperature interval for nucleation and growth of cavity type defects, the supersaturation degree of the intrinsic defects can be inhibited, the generation of vacancy defects with larger size is avoided, and the quality of crystal bars is obviously improved.
Based on the above problem, the utility model aims to provide a be used for drawing crystal bar refrigerated device to improve the cooling rate who draws the crystal bar, make its defect produce the temperature interval and shorten and reach the purpose that reduces the defect and improve the crystal quality.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a crystal cooling device for solving the defects of the prior art.
The purpose of the utility model is realized by the following technical scheme:
a crystal cooling device comprises a graphite sleeve and a water cooling jacket with a hollow interlayer, wherein the graphite sleeve is coaxially arranged from inside to outside; the center of the graphite sleeve is provided with an axial through hole for a crystal pulling rod to pass through;
the inner wall of the graphite sleeve is provided with a graphene coating;
the cooling device further comprises an argon gas system; and the argon system conveys argon gas for cooling downwards along the outer wall of the water-cooled jacket.
Preferably, a flange used for being connected with a furnace cover of the crystal pulling furnace is arranged on the outer side of the top of the water cooling jacket;
the argon system comprises an argon conveying port arranged on the flange, and the outlet end of the argon conveying port faces downwards.
Preferably, a first partition plate with the height consistent with that of the interlayer is arranged in the interlayer of the water cooling jacket, a plurality of second partition plates and third partition plates which are uniformly distributed and alternately arranged are further arranged in the circumferential direction with the first partition plate as a starting point, and finally the second partition plate is also adjacent to the other side of the first partition plate; notches for cooling water to flow are formed in the bottom end of the second partition plate, the bottom end of the interlayer, the top end of the third partition plate and the top end of the interlayer;
and an interlayer between the first partition board and the adjacent second partition board is provided with a water inlet, and an interlayer between the second partition boards adjacent to the other side is provided with a water outlet.
Preferably, water holes are formed in the upper end and the lower end of the first partition plate, the upper end of the second partition plate and the lower end of the third partition plate.
Preferably, the lower ends of the water cooling jacket and the graphite sleeve are provided with crystal pulling rod observation windows.
Preferably, the water cooling jacket and the flange are made of stainless steel.
According to the method, the crystal rod can rapidly pass through a characteristic temperature range (1100-1070 ℃) for cavity type defect growth nucleation through a triple cooling system of graphene heat radiation, water cooling of a water cooling jacket and argon cooling, and the crystal quality is effectively improved. Use the utility model provides a cooling device can make 37nm size's defect size on the crystal bar be less than 100 (not using before this application 37nm defect quantity about 10000).
Drawings
FIG. 1 is a schematic view of a crystal cooling apparatus provided by the present invention;
FIG. 2 is a schematic view of the crystal cooling apparatus provided by the present invention from a bottom perspective;
FIG. 3 is a schematic view showing the arrangement of a first partition, a second partition and a third partition with the circumferential surface of a water jacket horizontally expanded;
wherein: 1-water cooling jacket; 2-an observation window; 3-a flange; 4-a graphite sleeve; 7-a threaded hole; 8-a first separator; 9-a second separator; 10-a third separator; 11-water through holes; 12-a water inlet pipe; 13-water outlet pipe; 14-argon delivery port.
Detailed Description
The utility model provides a crystal cooling device, as shown in figures 1-2, comprising a graphite sleeve 4 and a water cooling jacket 1 with a hollow interlayer which are coaxially arranged from inside to outside; an axial through hole for a crystal pulling rod to pass through is formed in the center of the graphite sleeve;
a graphene coating is arranged on the inner wall of the graphite sleeve 4;
the cooling device also comprises an argon system; the argon system may deliver argon gas for cooling down the outer wall of the water jacket.
In conventional crystal pulling production, the upper part of the crystal pulling furnace requires a furnace cover to prevent impurities from entering the silicon melt liquid and affecting the purity of the ingot. The utility model discloses during the use, arrange water-cooling jacket and graphite sleeve in the silicon raw materials melt liquid level top of pulling the crystal stove in, make the crystal pulling stick pass from axial through hole, the water-cooling jacket top is connected with the bell, and along with the growth of pulling the crystal pulling stick keeps ascending or descending in step with the bell, need not set up elevating gear separately again. Circulating cooling water is introduced into the interlayer of the water cooling jacket in the crystal pulling process, and heat near the crystal pulling rod can be quickly taken away through the circulation of the cooling water in the water cooling jacket. And the graphite sleeve positioned on the inner side of the water cooling jacket can effectively transfer radiant heat on the surface of the crystal to the water cooling jacket by means of high reflectivity and high thermal conductivity of the graphite, so that the cooling efficiency is further improved. In addition, the argon system specially arranged in the application can convey argon which can flow along the outer wall of the water cooling jacket, so that on one hand, the heat of the water cooling jacket can be further taken away, on the other hand, the argon can continue to flow downwards along the outer wall to the surface of the molten silicon material liquid surface and the crystal surface, and the heat of the crystal and the oxide on the surface of the molten silicon liquid surface are further taken away.
Therefore, the crystal rod can rapidly pass through the characteristic temperature range (1100-1070 ℃) for cavity type defect growth nucleation through a triple cooling system of graphene heat radiation, water cooling of a water cooling jacket and argon cooling, and the crystal quality is effectively improved. Use the utility model provides a cooling device can make 37nm big or small defect size on the crystal bar be less than 100 (not using same specification crystal bar 37nm defect quantity about 10000 before this application).
Preferably, a flange 3 used for being connected with a furnace cover of the crystal pulling furnace is arranged on the outer side of the top of the water cooling jacket 1; the water cooling jacket can be fixedly connected with the furnace cover through the flange. Preferably, the flange is provided with a threaded hole 7 for a fixing screw to pass through.
The argon system is including locating argon gas delivery port 14 on the flange, and the exit end direction of argon gas delivery port 14 is downward, makes argon gas carry around the water jacket outer wall downwards. The inlet end of the argon gas delivery port may be located on the upper surface or side of the flange, as shown in fig. 2, and the argon gas may be delivered downward by entering from the side of the flange. In addition, an argon conveying pipeline can be directly arranged on the outer side of the water cooling jacket.
Preferably, the lower extreme of water-cooling cover and graphite sleeve is equipped with crystal pulling stick observation window 2, can monitor crystal bar growth state at any time through the observation window, accessible time adjusts when observing that the crystal bar grows unusually.
Preferably, as shown in fig. 3, a first partition plate 8 with a height consistent with the height of the interlayer is arranged in the interlayer of the water cooling jacket 1, a plurality of second partition plates 9 and third partition plates 10 which are uniformly distributed and alternately arranged are arranged along the circumferential direction with the first partition plate as a starting point, and finally the second partition plate 9 is still adjacent to the other side of the first partition plate 8; notches for cooling water to flow are formed in the bottom end of the second partition plate 9, the bottom end of the interlayer, the top end of the third partition plate 10 and the top end of the interlayer; a water inlet is arranged on the interlayer between the first clapboard 8 and the adjacent second clapboard 9, and a water outlet is arranged on the interlayer between the second clapboard adjacent to the other side. Furthermore, a water inlet pipe 12 is connected to a water inlet of the water cooling jacket, and a water outlet pipe 13 is connected to a water outlet. Under the action of the first partition plate, the second partition plate and the third partition plate, cooling water flows in the interlayer along a set route shown in figure 2 and finally flows out of the water outlet, so that the flow path of the cooling water completely and uniformly covers the whole water cooling jacket, and the utilization rate and the cooling efficiency of the cooling water are improved.
Preferably, the upper end and the lower end of the first partition plate, the upper end of the second partition plate and the lower end of the third partition plate are provided with water through holes 11, a small amount of cooling water can flow to the left side and the right side through the water through holes, and the cooling water flow dead angles are prevented from being formed in the water cooling jacket interlayer, so that the cooling efficiency is further improved.
Preferably, the water cooling jacket and the flange are made of stainless steel.
While the preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (6)
1. A crystal cooling device is characterized by comprising a graphite sleeve and a water cooling jacket with a hollow interlayer, wherein the graphite sleeve and the water cooling jacket are coaxially arranged from inside to outside; the center of the graphite sleeve is provided with an axial through hole for a crystal pulling rod to pass through;
the inner wall of the graphite sleeve is provided with a graphene coating;
the cooling device further comprises an argon gas system; and the argon system conveys argon gas for cooling downwards along the outer wall of the water-cooled jacket.
2. The crystal cooling apparatus of claim 1,
a flange used for being connected with a furnace cover of the crystal pulling furnace is arranged on the outer side of the top of the water cooling sleeve;
the argon system comprises an argon conveying port arranged on the flange, and the outlet end of the argon conveying port faces downwards.
3. The crystal cooling apparatus of claim 1,
a first partition plate with the height consistent with that of the interlayer is arranged in the interlayer of the water cooling jacket, a plurality of second partition plates and third partition plates which are uniformly distributed and alternately arranged are further arranged along the circumferential direction with the first partition plate as a starting point, and finally the second partition plate is also arranged adjacent to the other side of the first partition plate; notches for cooling water to flow are formed in the bottom end of the second partition plate and the bottom end of the interlayer, and in the top end of the third partition plate and the top end of the interlayer;
and a water inlet is formed in an interlayer between the first partition board and the adjacent second partition board, and a water outlet is formed in an interlayer between the second partition board adjacent to the other side.
4. The crystal cooling apparatus of claim 3,
and water holes are formed in the upper end and the lower end of the first partition plate, the upper end of the second partition plate and the lower end of the third partition plate.
5. The crystal cooling apparatus of claim 1,
and crystal pulling rod observation windows are arranged at the lower ends of the water cooling sleeve and the graphite sleeve.
6. The crystal cooling apparatus of claim 1,
the water cooling jacket and the flange are made of stainless steel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202221658805.1U CN217628720U (en) | 2022-06-30 | 2022-06-30 | Crystal cooling device |
Applications Claiming Priority (1)
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CN202221658805.1U CN217628720U (en) | 2022-06-30 | 2022-06-30 | Crystal cooling device |
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CN217628720U true CN217628720U (en) | 2022-10-21 |
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CN202221658805.1U Active CN217628720U (en) | 2022-06-30 | 2022-06-30 | Crystal cooling device |
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- 2022-06-30 CN CN202221658805.1U patent/CN217628720U/en active Active
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