CN217555822U - 48-pair-rod polycrystalline silicon reduction furnace chassis - Google Patents
48-pair-rod polycrystalline silicon reduction furnace chassis Download PDFInfo
- Publication number
- CN217555822U CN217555822U CN202221591129.0U CN202221591129U CN217555822U CN 217555822 U CN217555822 U CN 217555822U CN 202221591129 U CN202221591129 U CN 202221591129U CN 217555822 U CN217555822 U CN 217555822U
- Authority
- CN
- China
- Prior art keywords
- circle
- electrode
- circles
- chassis
- electrode hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model relates to a 48 to excellent polycrystalline silicon reduction furnace chassis is outwards equipped with 6 circles of electrode holes in proper order along chassis panel center, and the quantity of each circle of electrode hole from inside to outside is 6, 12, 24, 36 in proper order, and two adjacent electrode hole overlap joints of circle are striden in the electrode hole adoption of preceding 4 circles, and two adjacent electrode hole overlap joints of circle are striden in the electrode hole adoption of back 2 circles. The structure is compact, various heat generated in the reduction reaction process is integrated, the distribution of thermal fields in the furnace is optimized, the heat radiation among silicon rods is fully utilized, the single-furnace capacity of the reduction furnace is effectively improved, the power consumption is reduced, and the quality is improved; the arrangement of the feed inlets in the reduction reaction process is adjusted, the inner rings are uniformly distributed in combination with the distribution form of each circle of electrodes, and the outer rings are distributed in a concentrated manner, so that the distribution of gas fields in the furnace in the reaction process is optimized, the product quality is effectively improved, and the success rate of driving is improved.
Description
Technical Field
The utility model relates to the technical field of polycrystalline silicon production by an improved Siemens method, in particular to a 48-pair rod polycrystalline silicon reduction furnace chassis.
Background
The improved Siemens method for producing the polycrystalline silicon is a mainstream mature process for producing the polycrystalline silicon at home and abroad: the method is characterized in that high-purity trichlorosilane is used as a raw material, high-purity hydrogen is used for reducing on a high-purity silicon core at the temperature of about 1100 ℃, and elemental silicon grows on the silicon core under the condition of high-temperature heating to obtain a polycrystalline silicon rod-shaped product, wherein a reducing furnace is core equipment of the process.
The most mature of the current applications are 40 pairs of rod reduction furnaces, and a small fraction of 72 pairs of rod reduction furnaces. But the production of 40 pairs of rods is relatively low and the power consumption is relatively high; while 72 is less stable to rod operation and product quality is poor. Although there are some 48 pairs of rod reduction furnaces, the chassis of the furnace is arranged in concentric circles, the electrode holes are all lapped in the same circle, the distribution diameter of the electrode holes in the innermost circle is larger in the arrangement mode, and the tail gas hole is arranged in the central position, so that the distribution of the flow field in the furnace and the conversion efficiency are influenced. Therefore, in order to solve the problems, a large-scale high-yield energy-saving reduction furnace is needed to be developed, the chassis arrangement is reasonably carried out, the heat radiation is fully utilized, the operation power consumption of the reduction furnace is further reduced, and the competitiveness of the domestic polycrystalline silicon industry is improved.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome above-mentioned not enough, provide a 48 to excellent polycrystalline silicon reduction furnace chassis, interior 4 circles electrode holes adopt cellular equipartition, and outer 2 circles electrode holes adopt concentric circles to arrange, and compact structure effectively improves under the prerequisite of reduction furnace unit stove productivity, reduces the power consumption, promotes the quality, promotes the success rate of driving a car, provides a stable large-scale polycrystalline silicon reduction furnace to reduce polycrystalline silicon manufacturing cost by a wide margin.
The purpose of the utility model is realized like this:
the utility model provides a 48 to excellent polycrystalline silicon reduction furnace chassis, includes chassis flange, chassis panel, electrode hole, feed nozzle and tail gas hole distribute on the chassis panel according to the designing requirement, constitute the reduction furnace chassis jointly with chassis flange, chassis panel, outwards be equipped with 6 circles of electrode hole in proper order along chassis panel center, the quantity of each circle of electrode hole is 6, 12, 24, 36 in proper order from inside to outside, the electrode hole of preceding 4 circles adopts two adjacent electrode hole overlap joints of striding the circle, the electrode hole of back 2 circles adopts two adjacent electrode hole overlap joints of same circle.
Preferably, the number of electrode holes in the electrode hole pairs from inside to outside is as follows: 6 pairs, 12 pairs, 18 pairs.
Preferably, the electrode holes on the front 4 circles are distributed in a honeycomb shape, and each electrode hole on the front 4 circles is arranged on the vertex of the corresponding regular hexagon.
Preferably, the outermost circle of the chassis panel is provided with 6 tail air holes.
Preferably, the number of the feeding nozzles is 4, and the number of the feeding nozzles in each circle from inside to outside is 1, 6, 12 and 12.
Preferably, the innermost ring of feed nozzles is located at the center of the chassis panel, the second inner ring of feed nozzles is located between the first ring of electrode holes and the second ring of electrode holes, the second outer ring of feed nozzles and the fourth ring of electrode holes are arranged on the same ring, the feed nozzles of the ring are arranged between the adjacent two same rings of electrode holes, and the outer ring of feed nozzles is arranged between the fifth ring of electrode holes and the sixth ring of electrode holes.
Preferably, the distance between two overlapping electrode apertures is equal.
The beneficial effects of the utility model are that:
the structure is compact, various heat generated in the reduction reaction process is integrated, the distribution of thermal fields in the furnace is optimized, the heat radiation among silicon rods is fully utilized, the single-furnace capacity of the reduction furnace is effectively improved, the power consumption is reduced, and the quality is improved;
the arrangement of the feed inlets in the reduction reaction process is adjusted, the inner rings are uniformly distributed in combination with the distribution form of each circle of electrodes, and the outer rings are distributed in a concentrated manner, so that the distribution of gas fields in the furnace in the reaction process is optimized, the product quality is effectively improved, and the success rate of driving is improved.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of electrode hole pairing.
Fig. 3 is a schematic view of the honeycomb distribution of the electrode pores in the first 4 turns.
Wherein: a chassis flange 1; a chassis panel 2; an electrode hole 3; a feed nozzle 4; and a tail gas hole 5.
Detailed Description
Referring to fig. 1-3, the utility model relates to a 48 to excellent polycrystalline silicon reduction furnace chassis, including chassis flange 1, chassis panel 2, electrode hole 3, feed nozzle 4 and tail gas hole 5 distribute on chassis panel 2 according to the designing requirement, make up into the reduction furnace chassis with chassis flange 1, chassis panel 2 jointly, outwards be equipped with 6 circles of electrode hole 3 along chassis panel center in proper order, each circle of electrode hole 3 is concentric circles, the quantity of each circle of electrode hole 3 is 6 in proper order from inside to outside, 6, 12, 24, 36, total 96 electrode holes, electrode hole 3 of preceding 4 circles adopts two adjacent electrode hole overlap joints of striding the circle, electrode hole 3 of back 2 circles adopts two adjacent electrode hole overlap joints of the same circle, the electrode hole quantity of first circle is the same with second circle electrode hole quantity, the electrode hole quantity of third circle is the same with fourth circle electrode hole, constitute 4 circles of electrode hole pairs altogether, the quantity of electrode hole pair from outside is: a total of 48 pairs of electrode holes, 6 pairs, 12 pairs, and 18 pairs.
The electrode holes 3 on the front 4 circles are distributed in a honeycomb shape, and the electrode holes 3 on the front 4 circles are arranged on the vertexes of the corresponding regular hexagon.
Feed nozzle 4 is equipped with 4 circles, and each circle feed nozzle's quantity from inside to outside is 1, 6, 12 in proper order, and the inner circle feed nozzle is located chassis panel 2's center most, and inferior inner circle feed nozzle 4 is located between first circle electrode hole and the second circle electrode hole, and inferior outer lane feed nozzle circles on same circle with the fourth circle electrode hole, and this circle of feed nozzle 4 sets up between adjacent two electrode holes 3 with circle 4, outer lane feed nozzle sets up between fifth circle electrode hole and sixth circle electrode hole.
The outermost ring of the chassis panel 2 is provided with 6 exhaust holes 5.
The distance between two overlapped electrode holes (electrode distance) is equal, and can be 235mm or adjusted within the range of 200mm-280 mm.
The distance between the center of the outermost ring electrode hole 3 and the inner wall of the furnace cylinder of the reduction furnace is 200 to 350mm.
In addition to the above embodiments, the present invention also includes other embodiments, and all technical solutions formed by equivalent transformation or equivalent replacement should fall within the protection scope of the claims of the present invention.
Claims (7)
1. The utility model provides a 48 to excellent polycrystalline silicon reduction furnace chassis, includes chassis flange (1), chassis panel (2), electrode hole (3), feed nozzle (4) and tail gas hole (5) distribute on chassis panel (2) according to the design requirement, and constitute the reduction furnace chassis jointly with chassis flange (1), chassis panel (2), its characterized in that: the chassis panel is characterized in that 6 circles of electrode holes (3) are sequentially arranged outwards along the center of the chassis panel, the number of the electrode holes (3) is 6, 12, 24 and 36 from inside to outside, the electrode holes (3) of the front 4 circles are overlapped by two adjacent electrode holes of a cross circle, and the electrode holes (3) of the back 2 circles are overlapped by two adjacent electrode holes of the same circle.
2. The 48-pair rod polycrystalline silicon reduction furnace base plate according to claim 1, wherein: the electrode holes (3) of 6 circles form 4 circles of electrode hole pairs, and the number of the electrode hole pairs from inside to outside is as follows: 6 pairs, 12 pairs, 18 pairs.
3. The 48-pair rod polycrystalline silicon reduction furnace base plate according to claim 1, wherein: the electrode holes (3) on the front 4 circles are distributed in a honeycomb shape, and the electrode holes (3) on the front 4 circles are arranged on the vertexes of the corresponding regular hexagon.
4. The 48-pair rod polycrystalline silicon reduction furnace base plate according to claim 1, wherein: the outmost circle of chassis panel (2) is equipped with 6 tail gas holes (5).
5. The 48-pair rod polycrystalline silicon reduction furnace base plate according to claim 1, wherein: the feeding nozzles (4) are provided with 4 circles, and the number of the feeding nozzles in each circle is 1, 6, 12 and 12 in sequence from inside to outside.
6. The 48-pair rod polycrystalline silicon reduction furnace chassis of claim 5, wherein: the innermost circle of feed nozzle is located the center of chassis panel (2), and inferior inner circle of feed nozzle is located between first circle electrode hole and the second circle electrode hole, and inferior outer lane of feed nozzle and fourth circle electrode hole are on same circle, and feed nozzle (4) setting of this circle is between adjacent two electrode holes (3) of same circle, outer lane feed nozzle sets up between fifth circle electrode hole and sixth circle electrode hole.
7. The 48-pair rod polycrystalline silicon reduction furnace base plate according to claim 1, wherein: the distance between the two overlapped electrode holes (3) is equal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202221591129.0U CN217555822U (en) | 2022-06-24 | 2022-06-24 | 48-pair-rod polycrystalline silicon reduction furnace chassis |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202221591129.0U CN217555822U (en) | 2022-06-24 | 2022-06-24 | 48-pair-rod polycrystalline silicon reduction furnace chassis |
Publications (1)
Publication Number | Publication Date |
---|---|
CN217555822U true CN217555822U (en) | 2022-10-11 |
Family
ID=83503283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202221591129.0U Active CN217555822U (en) | 2022-06-24 | 2022-06-24 | 48-pair-rod polycrystalline silicon reduction furnace chassis |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN217555822U (en) |
-
2022
- 2022-06-24 CN CN202221591129.0U patent/CN217555822U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN201512418U (en) | Polycrystalline silicon reducing furnace | |
CN201473329U (en) | Polysilicon reducing furnace | |
CN102267698B (en) | Arrangement mode and connection method of novel polysilicon reduction furnace with 18 pairs of rods | |
CN205687570U (en) | A kind of 45 to rod compact polycrystalline silicon reducing furnace | |
CN217555822U (en) | 48-pair-rod polycrystalline silicon reduction furnace chassis | |
CN108557824B (en) | Gas-phase controllable polysilicon reduction furnace | |
CN201326030Y (en) | Polysilicon reducing furnace | |
CN214141602U (en) | 56-pair-rod polycrystalline silicon reduction furnace chassis | |
CN109133066B (en) | Electronic grade polycrystalline silicon reduction furnace chassis and reduction furnace | |
CN210367009U (en) | Large-scale reduction furnace chassis | |
CN211664727U (en) | 108-pair rod reduction furnace chassis | |
CN213713975U (en) | Chassis of 70-pair-rod polycrystalline silicon reduction furnace | |
CN101973551B (en) | Polysilicon reducing furnace | |
CN102936013A (en) | Polycrystalline silicon reduction furnace | |
CN207016494U (en) | A kind of electric controllable efficient polycrystalline silicon reduction furnace | |
CN206735808U (en) | A kind of polycrystalline silicon reduction furnace base plate | |
CN201648567U (en) | Polysilicon decomposing furnace | |
CN215592626U (en) | 80-pair-rod polycrystalline silicon reduction furnace chassis | |
CN202046891U (en) | Energy-saving polysilicon reduction furnace with heat shield | |
CN206203898U (en) | Polycrystalline silicon reducing furnace | |
CN101830467B (en) | Polycrystalline silicon decomposing furnace | |
CN207158795U (en) | A kind of gas phase controllable type polycrystalline silicon reducing furnace | |
CN213231540U (en) | 63-pair-rod reduction furnace chassis for polycrystalline silicon production | |
CN220265285U (en) | 84 pair bar polycrystalline silicon reduction furnace bottom plate | |
CN211035255U (en) | Ultra-large reactor for producing polycrystalline silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |