CN217351609U - Composite electrode and single crystal furnace - Google Patents
Composite electrode and single crystal furnace Download PDFInfo
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- CN217351609U CN217351609U CN202220356495.1U CN202220356495U CN217351609U CN 217351609 U CN217351609 U CN 217351609U CN 202220356495 U CN202220356495 U CN 202220356495U CN 217351609 U CN217351609 U CN 217351609U
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Abstract
The utility model discloses a combined electrode and single crystal growing furnace, including the electrode body, seted up connecting hole and exhaust micropore on this electrode body, the connecting hole includes connecting hole and lower connecting hole, still open on the electrode body has the cavity, and the cavity is located between connecting hole and the lower connecting hole, exhaust micropore and cavity intercommunication, and the cavity intussuseption is filled with the power consumption body that falls that has ventilation function and coefficient of heat conductivity and is less than the electrode body. The utility model discloses calorific loss is few, and the energy consumption is lower.
Description
Technical Field
The utility model belongs to the technical field of monocrystalline silicon, in particular to a composite electrode and a monocrystalline furnace.
Background
Silicon wafers are used in large quantities in the semiconductor industry, and the growth of silicon single crystal which is the basis thereof is an important technique. In the growth of single crystal silicon, there are a floating zone silicon refining (FZ) method in which a silicon rod is locally heated and melted by an induction coil to be single-crystallized, and a czochralski single crystal growth (CZ) method in which a silicon raw material in a crucible is heated and melted by a heater to extract a single crystal from the obtained solution. The crucible in the CZ method is generally a double-layered structure of a quartz crucible composed of silicon and oxygen and a graphite crucible supporting the quartz crucible in order to prevent the quartz crucible from softening at a high temperature and changing in shape. In the CZ method, oxygen eluted from a quartz crucible in a growing crystal is taken into silicon, and in a wafer cut out from the crystal, oxygen precipitates are formed by heat treatment or the like in a device, and these oxygen precipitates exert a gettering effect of capturing impurities in a device process. Meanwhile, the CZ method is also relatively easy to increase the diameter of the silicon single crystal as compared with the FZ method, and the CZ method is the mainstream as a method for industrially growing the silicon single crystal.
The low-cost and high-quality monocrystalline silicon piece is the core competitiveness of monocrystalline silicon manufacturing enterprises. In order to further reduce the cost, a large-size thermal field and a large-size silicon wafer are produced at the same time, but the large thermal field brings the problem of high power consumption, the high power consumption can not only cause the rise of the crystal pulling cost, but also influence the stability of the growth of the single crystal, and the energy consumption is the most important factor for limiting the cost of the single crystal silicon all the time.
The graphite electrode used by the existing single crystal silicon growth single crystal furnace is an isostatic graphite electrode, the structure is shown in figure 1, the graphite electrode shown in figure 1 comprises a graphite electrode body 1, the graphite electrode body 1 is provided with a connecting hole, the connecting hole comprises an upper connecting hole 2 and a lower connecting hole 3, the graphite electrode body 1 is also provided with a channel 5 for discharging the heated gas outwards, the channel 5 is positioned between the upper connecting hole 2 and the lower connecting hole 3 and is direct, the graphite electrode body 1 is also provided with an exhaust micropore 4, the exhaust micropore 4 is communicated with the channel 5, and the diameter of the channel 5 is smaller than that of the connecting hole.
The heat loss is large when the graphite electrode used by the existing single crystal furnace for growing the monocrystalline silicon is used.
SUMMERY OF THE UTILITY MODEL
To the above-mentioned defect, the utility model provides a combined electrode, calorific loss is few, and the energy consumption is lower.
The utility model provides a composite electrode, includes the electrode body, has seted up connecting hole and exhaust micropore on this electrode body, and the connecting hole includes connecting hole and lower connecting hole, still open on the electrode body has the cavity, and the cavity lies in between connecting hole and the lower connecting hole, and exhaust micropore and cavity intercommunication have the body of consuming that falls that has ventilation function and coefficient of heat conductivity are less than the electrode body to pack in the cavity.
Optionally, the electrode body is an isostatic graphite electrode.
Optionally, the power reducing body is an adhesive-based high-purity felt.
Optionally, a diameter of the power consumption reducing body > a diameter of the connection hole.
The utility model also provides a single crystal furnace.
A single crystal furnace is provided with a metal electrode and a nonmetal electrode, wherein the nonmetal electrode is the composite electrode.
The invention has the following principle and beneficial effects:
the inventor of the utility model discovers in the production practice: when the isostatic pressing graphite electrode is used, the isostatic pressing graphite electrode is contacted with a copper electrode to transfer heat downwards, the electrode of the isostatic pressing graphite material has a large heat conductivity coefficient, so that the heat loss is large, and the electrode of the isostatic pressing graphite material has high resistivity and generates much heat per se, so that the heat loss is also caused.
The utility model discloses the inventor has realized reducing seeding power 2kw at least through pack the high-purity felt of viscose base in isostatic pressing graphite electrode.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and those skilled in the art can obtain other drawings without inventive labor.
FIG. 1 is a schematic structural view of a background isostatic graphite electrode according to the present invention;
FIG. 2 is an exploded view of the composite electrode of the present invention;
fig. 3 is a schematic view of the overall structure of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The technical solution of the present invention will be described in detail with specific examples. The following embodiments may be combined with each other and may not be described in detail in some embodiments for the same or similar concepts or processes.
Referring to fig. 2-3, fig. 2 is an exploded schematic view of the composite electrode provided by the present invention, and fig. 3 is an overall structural schematic view provided by the present invention.
The utility model provides a composite electrode, includes electrode body 1, has seted up the connecting hole on this electrode body 1, and the connecting hole includes connecting hole 2 and lower connecting hole 3, has still opened cavity 5 and exhaust micropore 4 on this electrode body 1, and cavity 5 is located between connecting hole 2 and the lower connecting hole 3, and exhaust micropore 4 and cavity 5 intercommunication, cavity 5 intussuseption are filled with and have ventilation function and coefficient of heat conductivity and be less than the power dissipation body 6 that falls of electrode body 1. Through 5 with the setting that has ventilative function and coefficient of heat conductivity and is less than the power consumption body 6 that falls of electrode body 1, effectively reduce heat conduction downwards to reduce heat loss, and have ventilative function and coefficient of heat conductivity and be less than the power consumption body 6 that falls of electrode body 1 and still discharge the gas after generating heat outward simultaneously, avoid electrode itself overheated.
In one or more specific embodiments of the present application, the electrode body 1 is an isostatic graphite electrode.
In one or more embodiments of the present application, the power reducing body 6 is a viscose-based high-purity felt, which has a thermal conductivity of only 0.1W/m.k on one hand, which is much lower than that of the isostatic graphite material by about 151W/m.k, thereby greatly reducing heat loss.
In one or more specific embodiments of the present application, the diameter of the power consumption reducing body 6 > the diameter of the connection hole, further reducing heat loss.
The utility model discloses a compound electrode that it has high-purity felt of viscose base to fill compares with current isostatic pressing graphite electrode, and the resistivity is from 13 x 10 -6 Omega. m Down-regulated to 8X 10 -6 Ω·m。
Based on the composite electrode, the utility model also provides a single crystal furnace.
A single crystal furnace is provided with a metal electrode and a nonmetal electrode, wherein the nonmetal electrode is the composite electrode.
Will the utility model be used for monocrystalline silicon production, can reduce seeding power 2kw at least.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected" and "connected" are to be construed broadly and may include, for example, a fixed connection, an indirect connection through an intermediary, a connection between two elements, or an interaction between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless specifically stated otherwise.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (4)
1. A composite electrode comprises an electrode body (1), wherein the electrode body (1) is provided with a connecting hole and an exhaust micropore (4), the connecting hole comprises an upper connecting hole (2) and a lower connecting hole (3), and the composite electrode is characterized in that the electrode body (1) is also provided with a cavity (5), the cavity (5) is positioned between the upper connecting hole (2) and the lower connecting hole (3), the exhaust micropore (4) is communicated with the cavity (5), and a power consumption reducing body (6) which has a ventilation function and has a heat conductivity coefficient smaller than that of the electrode body (1) is filled in the cavity (5); the power consumption reducing body (6) is an adhesive-based high-purity felt.
2. A composite electrode according to claim 1, characterized in that the electrode body (1) is an isostatic graphite electrode.
3. A composite electrode according to claim 1, characterized in that the diameter of the power reducing body (6) is > the diameter of the connection hole.
4. A single crystal furnace in which a metal electrode and a non-metal electrode are installed, wherein the non-metal electrode is a composite electrode according to any one of claims 1 to 3.
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CN202220356495.1U CN217351609U (en) | 2022-02-22 | 2022-02-22 | Composite electrode and single crystal furnace |
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CN202220356495.1U CN217351609U (en) | 2022-02-22 | 2022-02-22 | Composite electrode and single crystal furnace |
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