CN217182945U - Low-cost over-temperature detection device with hysteresis - Google Patents
Low-cost over-temperature detection device with hysteresis Download PDFInfo
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- CN217182945U CN217182945U CN202220495368.XU CN202220495368U CN217182945U CN 217182945 U CN217182945 U CN 217182945U CN 202220495368 U CN202220495368 U CN 202220495368U CN 217182945 U CN217182945 U CN 217182945U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The utility model relates to a low-cost excess temperature detection device of hysteresis in area, include: a voltage dividing branch; the first branch circuit comprises a voltage stabilizing source, and a cathode and an anode of the voltage stabilizing source are respectively connected with the voltage dividing branch circuit; the second branch circuit is connected between the voltage dividing branch circuit and the reference electrode of the voltage stabilizing source; and the hysteresis circuit comprises a field effect tube and a second resistor, wherein the grid electrode of the field effect tube is connected with the cathode of the voltage stabilizing source, the common joint of the grid electrode of the field effect tube and the cathode of the voltage stabilizing source is connected with a load terminal, the first end of the second resistor is connected with the second branch circuit, and the second end of the second resistor is connected with the drain of the field effect tube. This excess temperature detection device effectively avoids frequently triggering between normal condition and abnormal state because of the temperature rise is unusual through setting up the hysteresis circuit unusually, further protects the components and parts among the excess temperature detection device to promote the reliability and the stability of system, promote user experience.
Description
Technical Field
The utility model relates to an integrated power supply technical field, in particular to low-cost excess temperature detection device who takes hysteresis.
Background
With the continuous development of integrated circuits, the integration level of the integrated circuits is continuously increased, which causes the power consumption of the integrated circuits to be continuously increased, leads to the continuous rise of temperature, and further influences the reliability and stability of the integrated circuits. Therefore, in some high-power modules, over-temperature protection is very important.
The conventional over-temperature detection device generally does not have a hysteresis function, as shown in fig. 2, when the temperature rises to the over-temperature detection point, the resistance value of a thermistor RT1 decreases, the voltage divided to the R pole of a voltage regulator U1 increases, and when the voltage exceeds 2.5V, the a pole and the K pole of the voltage regulator U1 are conducted, and the voltage at the For MCU terminal decreases. When the temperature is lower than the over-temperature detection point, the resistance value of the thermistor RT1 is increased, the voltage divided to the R pole of the voltage stabilizer U1 is decreased, when the voltage is lower than 2.5V, the A pole and the K pole of the voltage stabilizer U1 are disconnected, and the voltage of the For MCU terminal is increased. The MCU judges whether the temperature is over-temperature or not through the voltage of the For MCU terminal, and when the temperature is over-temperature, the fan is turned on or the power supply output is turned off.
In the above process, when the temperature loiters near the over-temperature detection point, frequent switching between over-temperature operation and normal operation may be caused, so that the fan is frequently turned on or the power supply is cut off, which may affect the user experience.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is desirable to provide an over-temperature detection device with hysteresis at low cost.
In order to achieve the above object, the utility model provides a pair of low-cost excess temperature detection device who takes hysteresis, include:
a voltage dividing branch;
the first branch circuit comprises a voltage-stabilizing source, and a cathode and an anode of the voltage-stabilizing source are respectively connected with the voltage-dividing branch circuit;
the second branch circuit is connected between the voltage dividing branch circuit and a reference electrode of the voltage stabilizing source;
and the hysteresis circuit comprises a field effect transistor and a second resistor, wherein the grid electrode of the field effect transistor is connected with the cathode of the voltage stabilizing source, the common joint of the grid electrode of the field effect transistor and the cathode of the voltage stabilizing source is connected with the load terminal, the first end of the second resistor is connected with the second branch circuit, and the second end of the second resistor is connected with the drain of the field effect transistor.
Preferably, the voltage dividing branch comprises a thermistor and a first resistor, wherein a first end of the thermistor is connected with the power supply voltage terminal, a second end of the thermistor is connected with a first end of the first resistor, and a second end of the first resistor is grounded;
the first end of the thermistor is connected with the first branch circuit, the second end of the first resistor is connected with the first branch circuit, and the common junction of the second end of the thermistor and the first end of the first resistor is connected with the second branch circuit.
Preferably, the first branch circuit further comprises a third resistor, a first end of the third resistor is connected with the voltage dividing branch circuit, and a second end of the third resistor is connected with a common junction of a gate of the field effect transistor and a cathode of the voltage regulator.
Preferably, the common junction of the grid of the field effect transistor and the cathode of the voltage regulator is connected with the load terminal through a fourth resistor.
Preferably, the source of the field effect transistor is connected to the first branch.
Preferably, the regulated power supply is a regulator.
Preferably, the voltage regulator is model number TL 431.
The utility model discloses has following technological effect: this excess temperature detection device effectively avoids frequently triggering between normal condition and abnormal state because of the temperature rise is unusual through setting up the hysteresis circuit unusually, further protects the components and parts among the excess temperature detection device to promote excess temperature detection device's reliability and stability, promote user experience.
The present invention will be further explained with reference to the drawings and the embodiments.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a circuit diagram of an over-temperature detection device according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a prior art over-temperature detection device;
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a low-cost over-temperature detection device with hysteresis, including:
a voltage dividing branch;
the first branch comprises a voltage-stabilizing source U1, and a cathode K and an anode A of the voltage-stabilizing source U1 are respectively connected with the voltage-dividing branch;
the second branch is connected between the voltage dividing branch and a reference pole R of a voltage stabilizing source U1;
the hysteresis circuit comprises a field effect transistor Q1 and a second resistor R2, wherein a grid G of the field effect transistor Q1 is connected with a cathode K of a voltage regulator U1, a common junction of the grid G of the field effect transistor Q1 and the cathode K of the voltage regulator U1 is connected with a load terminal For MCU, a first end of the second resistor R2 is connected with a second branch, and a second end of the second resistor R2 is connected with a drain D of the field effect transistor Q1.
Specifically, the thermistor is a negative temperature coefficient resistor.
And the cathode K of the voltage-stabilizing source is connected with a power supply voltage terminal VCC through a third resistor, and the anode A of the voltage-stabilizing source is grounded.
Further, the field effect transistor Q1 is an N-channel enhancement type MOS field effect transistor.
When the temperature is in a normal state, the resistance value of the thermistor RT1 is larger, at the moment, the voltage of the reference electrode R of the voltage regulator U1 is higher, the anode A and the cathode K of the voltage regulator U1 are disconnected, at the moment, the voltage of the common contact point of the grid G of the field effect transistor Q1 and the cathode K of the voltage regulator U1 is in a high level, the field effect transistor Q1 is turned on, the first resistor and the second resistor R2 are connected in parallel, and therefore the total resistance value of the first resistor R1 and the second resistor R2 is reduced. At this time, the voltage of the load terminal For MCU is high level.
When the temperature is in the abnormal rising state, the resistance value of the thermistor RT1 is reduced due to the over-temperature, and the voltage of the thermistor RT1 and the parallel voltage of the first resistor R1 and the second resistor R2 are increased. When the voltage of the common junction point of the second end of the thermistor RT1 and the first end of the first resistor R1 is higher than 2.5V, the anode A and the cathode K of the voltage regulator U1 are conducted, at the moment, the voltage of the common junction point of the grid G of the field effect transistor Q1 and the cathode K of the voltage regulator U1 is zero, the field effect transistor Q1 is disconnected, and the second resistor R2 is disconnected from being connected with the first resistor R1 in parallel. At this time, the resistance of the first resistor R1 is larger than the total resistance of the first resistor R1 and the second resistor R2, so the voltage of the common point of the second end of the thermistor RT1 and the first end of the first resistor R1 continuously rises, preventing frequent switching.
When the temperature drops, the resistance value of the thermistor RT1 rises, and the resistance value of the thermistor RT1 needs to rise to a higher resistance value, so that the voltage of the common contact point of the second end of the thermistor RT1 and the first end of the first resistor R1 is pressed against 2.5V, the switching time from the abnormal temperature rise state to the normal temperature state is reduced, and components of the device are effectively protected.
This excess temperature detection device effectively avoids frequently triggering between normal condition and abnormal state because of the temperature rise is unusual through setting up the hysteresis circuit unusually, further protects the components and parts among the excess temperature detection device to promote excess temperature detection device's reliability and stability, promote user experience. In addition, the hysteresis circuit comprises a field effect transistor and a second resistor, so that the number of components is small and the manufacturing cost is low.
As shown in fig. 1, the voltage dividing branch includes a thermistor RT1 and a first resistor R1, a first end of the thermistor RT1 is connected to the power supply voltage terminal VCC, a second end of the thermistor RT1 is connected to a first end of the first resistor R1, and a second end of the first resistor R1 is grounded;
the first end of the thermistor RT1 is connected with the first branch circuit, the second end of the first resistor R1 is connected with the first branch circuit, and the common joint of the second end of the thermistor RT1 and the first end of the first resistor R1 is connected with the second branch circuit.
As shown in fig. 1, the first branch further includes a third resistor R3, a first end of the third resistor R3 is connected to the voltage dividing branch, and a second end of the third resistor R3 is connected to a common node of the gate G of the field effect transistor Q1 and the cathode K of the voltage regulator U1.
As shown in fig. 1, a common junction of the gate G of the field effect transistor Q1 and the cathode K of the regulator U1 is connected to the load terminal For MCU through a fourth resistor R4.
As shown in fig. 1, the source S of the fet Q1 is connected to the first branch.
As shown in fig. 1, regulator U1 is a regulator. The voltage regulator is model number TL 431.
The above is merely a preferred embodiment of the present invention, and is not intended to limit the present invention in any way. The invention is not limited to the embodiments described herein, but is capable of other embodiments according to the invention, and may be used in various other applications, including, but not limited to, industrial, or industrial. Therefore, the equivalent changes made according to the shape, structure and principle of the present invention should be covered in the protection scope of the present invention.
Claims (7)
1. A low-cost over-temperature detection device with hysteresis, characterized by comprising:
a voltage dividing branch;
the first branch circuit comprises a voltage stabilizing source, and a cathode and an anode of the voltage stabilizing source are respectively connected with the voltage dividing branch circuit;
the second branch circuit is connected between the voltage dividing branch circuit and the reference electrode of the voltage stabilizing source;
and the hysteresis circuit comprises a field effect tube and a second resistor, wherein the grid electrode of the field effect tube is connected with the cathode of the voltage stabilizing source, the common joint of the grid electrode of the field effect tube and the cathode of the voltage stabilizing source is connected with a load terminal, the first end of the second resistor is connected with the second branch circuit, and the second end of the second resistor is connected with the drain of the field effect tube.
2. The low-cost over-temperature detection device with hysteresis of claim 1, wherein the voltage dividing branch comprises a thermistor and a first resistor, a first end of the thermistor is connected with a power supply voltage terminal, a second end of the thermistor is connected with a first end of the first resistor, and a second end of the first resistor is grounded;
the first end of the thermistor is connected with the first branch circuit, the second end of the first resistor is connected with the first branch circuit, and a common joint of the second end of the thermistor and the first end of the first resistor is connected with the second branch circuit.
3. The low-cost over-temperature detection device with hysteresis of claim 1, wherein the first branch further comprises a third resistor, a first end of the third resistor is connected with the voltage dividing branch, and a second end of the third resistor is connected with a common junction of a gate of the field effect transistor and a cathode of a voltage regulator.
4. The low-cost hysteretic overtemperature detection device of claim 1, wherein a common junction of a gate of the field effect transistor and a cathode of a regulated power supply is connected with the load terminal through a fourth resistor.
5. The low-cost hysteretic overtemperature detection device of claim 1, wherein a source of said field effect transistor is connected to said first branch.
6. The low-cost hysteretic overtemperature detection device of claim 1 wherein said regulated voltage source is a voltage regulator.
7. The low-cost hysteretic overtemperature detection device of claim 6, wherein said voltage regulator is of the type TL 431.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220495368.XU CN217182945U (en) | 2022-03-07 | 2022-03-07 | Low-cost over-temperature detection device with hysteresis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220495368.XU CN217182945U (en) | 2022-03-07 | 2022-03-07 | Low-cost over-temperature detection device with hysteresis |
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| Publication Number | Publication Date |
|---|---|
| CN217182945U true CN217182945U (en) | 2022-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220495368.XU Active CN217182945U (en) | 2022-03-07 | 2022-03-07 | Low-cost over-temperature detection device with hysteresis |
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| CN (1) | CN217182945U (en) |
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- 2022-03-07 CN CN202220495368.XU patent/CN217182945U/en active Active
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