CN217173860U - ALD equipment is with dividing chamber air inlet unit - Google Patents
ALD equipment is with dividing chamber air inlet unit Download PDFInfo
- Publication number
- CN217173860U CN217173860U CN202123325352.9U CN202123325352U CN217173860U CN 217173860 U CN217173860 U CN 217173860U CN 202123325352 U CN202123325352 U CN 202123325352U CN 217173860 U CN217173860 U CN 217173860U
- Authority
- CN
- China
- Prior art keywords
- air inlet
- chamber
- cavity
- air
- ald apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a ALD equipment is with dividing chamber air inlet unit, admit air subassembly and spray assembly including first air inlet subassembly, second, be equipped with mutually independent first cavity and second cavity in the spray assembly, first air inlet subassembly and first cavity intercommunication, first cavity is equipped with and is used for the first shower to the jet-propelled of reacting chamber, the second air inlet subassembly communicates with the second cavity, the second cavity is equipped with and is used for the first hole that sprays to the jet-propelled reaction chamber. The utility model has the advantages of the separated cavity is air inlet, the spraying channel can not be blocked, and the deposition effect is good.
Description
Technical Field
The utility model relates to an ALD air inlet unit technical field for the equipment especially relates to an ALD equipment is with dividing chamber air inlet unit.
Background
ALD (atomic layer deposition technique) refers to a technique for forming a deposited thin film by alternately introducing two or more chemical vapor precursors into a reaction chamber and reacting at the surface of a substrate. The technology can plate the substance on the surface of the substrate layer by layer in the form of monoatomic film. The precursor is chemically adsorbed on the surface of the substrate when reaching the deposition surface, and in order to ensure that the chemical reaction only occurs on the surface of the substrate, inert gas is required to purge the reaction chamber between pulses of the precursor to remove the excess precursor which is not adsorbed on the surface of the substrate.
The prior ALD equipment mainly has two air inlet modes, wherein one mode is that the air is mixed in an air inlet pipe and then enters a reaction chamber; one is divided into two different air inlet pipes, which are mixed in a transition layer and then enter a reaction chamber. Two kinds of mainstream air inlet modes that have now all can make chemical vapor precursor mix, take place the pre-reaction and produce the dust in mixing process, and in some can get into the reacting chamber of these dusts, influence the deposit effect, partly can slowly plug up the shower, influence the spray effect and then influence the deposit effect.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to overcome prior art not enough, provide a divide the chamber admit air, can not block up the ALD apparatus that sprays the passageway, deposit effectually with dividing chamber air inlet unit.
In order to solve the technical problem, the utility model discloses a following technical scheme:
the utility model provides a ALD equipment is with dividing chamber air inlet unit, includes first air inlet assembly, second air inlet assembly and spray assembly, be equipped with first cavity and the second cavity of mutual independence in the spray assembly, first air inlet assembly and first cavity intercommunication, first cavity is equipped with and is used for the jet-propelled first shower of reaction chamber, the second air inlet assembly and second cavity intercommunication, the second cavity is equipped with and is used for the jet-propelled first hole that sprays of reaction chamber.
As a further improvement of the above technical solution:
the first cavity is positioned above the second cavity, and the first spray pipe penetrates through the second cavity to be communicated with the reaction chamber.
The first air inlet assembly comprises a first air inlet interface and a first air inlet flange connected with the first air inlet interface, a first air inlet channel is arranged on a top plate of the first cavity, and the first air inlet flange is communicated with the first cavity through the first air inlet channel.
A first sealing ring is arranged between the first air inlet flange and the top plate of the first cavity.
A flow homogenizing plate for uniformly diffusing gas is arranged in the first chamber, and the first gas inlet channel faces the flow homogenizing plate.
The second air inlet assembly comprises a second air inlet interface and a second air inlet flange connected with the second air inlet interface, a second air inlet channel is arranged on a top plate of the second chamber, and the second air inlet flange penetrates through the second chamber and is communicated with the second air inlet channel.
And a second sealing ring is arranged between the second air inlet interface and the second air inlet flange.
And a third sealing ring is arranged between the second air inlet flange and the top plate of the first cavity, and a fourth sealing ring is arranged between the second air inlet flange and the top plate of the second cavity.
The first spraying pipe is provided with a plurality of spraying holes, and the first spraying pipe and the first spraying holes are alternately arranged.
The bottom plate of the second cavity is provided with a positioning hole, and the outlet end of the first spraying pipe is positioned in the positioning hole.
Compared with the prior art, the beneficial effects of the utility model reside in that:
the utility model discloses a ALD equipment is with dividing chamber air inlet unit, first precursor loop through first air inlet assembly, first cavity and first shower, and first shower sprays first precursor to the base member top in the reacting chamber to react and deposit with the material on base member surface, form first air inlet pipeline; the second precursor sequentially passes through the second air inlet assembly, the second chamber and the first spraying hole, the first spraying hole sprays the second precursor to the position above the base body in the reaction chamber, and the second precursor reacts and deposits with the material on the surface of the base body to form a second air inlet pipeline; the first precursor and the second precursor are alternately fed, and the first precursor and the second precursor are uniformly sprayed on the surface of the substrate in the reaction chamber layer by layer. The utility model discloses well first cavity and second cavity mutually independent, first precursor and second precursor independently admit air through first air inlet pipeline and second air inlet pipeline respectively, and mutually exclusive before getting into the reacting chamber has reduced the emergence of pre-reaction, and then avoid producing the dust and block up shower, influence the deposit effect.
Drawings
FIG. 1 is a schematic sectional view of a chamber-dividing gas inlet device for an ALD apparatus of the present invention.
Fig. 2 is an enlarged view at a in fig. 1.
The reference numerals in the figures denote: 1. a first air intake assembly; 11. a first air inlet interface; 12. a first air intake flange; 13. a first seal ring; 2. a second air intake assembly; 21. a second air inlet interface; 22. a second intake flange; 23. a second seal ring; 24. a third seal ring; 25. a fourth seal ring; 3. a spray assembly; 33. a floor of the second chamber; 4. a first chamber; 41. a first air intake passage; 42. a flow homogenizing plate; 43, a connecting piece; 5. a second chamber; 51. a second intake passage; 52. positioning holes; 6. a reaction chamber; 7. a first shower pipe; 8. a first spray hole.
Detailed Description
The technical solution of the present invention will be further described in detail with reference to the drawings and specific embodiments.
Fig. 1 and fig. 2 show the utility model discloses ALD equipment is with dividing an embodiment of chamber air inlet unit, the ALD equipment of this embodiment is with dividing chamber air inlet unit, including first air inlet assembly 1, second air inlet assembly 2 and spray assembly 3, be equipped with mutually independent first cavity 4 and second cavity 5 in the spray assembly 3, first air inlet assembly 1 and first cavity 4 intercommunication, first cavity 4 is equipped with and is used for the first shower 7 to 6 jet-propelled reaction chambers, second air inlet assembly 2 and second cavity 5 intercommunication, second cavity 5 is equipped with and is used for the first hole 8 that sprays to 6 jet-propelled reaction chambers.
According to the cavity-divided gas inlet device for the ALD equipment, a first precursor sequentially passes through a first gas inlet assembly 1, a first chamber 4 and a first spray pipe 7, the first spray pipe 7 sprays the first precursor to the upper part of a base body in a reaction chamber 6, and the first precursor reacts with a material on the surface of the base body and is deposited to form a first gas inlet pipeline; the second precursor sequentially passes through the second air inlet assembly 2, the second cavity 5 and the first spraying holes 8, the first spraying holes 8 spray the second precursor to the upper part of the substrate in the reaction chamber 6, and the second precursor reacts with the material on the surface of the substrate and is deposited to form a second air inlet pipeline; the first precursor and the second precursor are alternately fed, and uniformly sprayed on the surface of the substrate in the reaction chamber 6 layer by layer. This ALD apparatus is with dividing first cavity 4 and the mutual independence of second cavity 5 of chamber air inlet unit, and first precursor and second precursor are independently admitted air through first air inlet pipeline and second air inlet pipeline respectively, and mutually immiscible before getting into reaction chamber 6 has reduced the emergence of pre-reaction, and then avoid producing the dust and block up the shower, influence the deposit effect. It should be noted that in other embodiments, the second chamber 5 may also be provided with a shower for spraying gas into the reaction chamber 6.
In this embodiment, the first chamber 4 is located above the second chamber 5, and the first shower pipe 7 passes through the second chamber 5 and communicates with the reaction chamber 6. The layout mode has a simple structure, the first spray pipes 7 and the first spray holes 8 are properly spaced, and the first precursor and the second precursor can be uniformly sprayed to the surface of the substrate in the reaction chamber 6 layer by layer.
In this embodiment, the first air intake assembly 1 includes a first air intake interface 11 and a first air intake flange 12 connected to the first air intake interface 11, a first air intake passage 41 is provided on a top plate of the first chamber 4, and the first air intake flange 12 is communicated with the first chamber 4 through the first air intake passage 41, so that the structure is simple and air intake is convenient.
In this embodiment, a first sealing ring 13 is disposed between the first air inlet flange 12 and the top plate of the first chamber 4. The external gas is prevented from entering the first gas inlet channel 41 through the gap between the first gas inlet flange 12 and the top plate of the first chamber 4, and the sealing performance of the first gas inlet pipeline is ensured.
In this embodiment, a flow-equalizing plate 42 for uniformly diffusing the gas is disposed in the first chamber 4, and the first gas inlet channel 41 faces the flow-equalizing plate 42. The precursor from the first gas inlet channel 41 is sprayed on the uniform flow plate 42, uniformly diffused to the first chamber 4, and uniformly sprayed to the surface of the substrate in the reaction chamber 6 through the first spray pipes 7, so as to ensure the deposition effect. Specifically, the two ends of the uniform flow plate 42 are connected to the top plate of the first chamber 4 through the connection members 43.
In this embodiment, the second air intake assembly 2 includes a second air intake port 21 and a second air intake flange 22 connected to the second air intake port 21, a second air intake passage 51 is provided on a top plate of the second chamber 5, and the second air intake flange 22 passes through the second chamber 5 and is communicated with the second air intake passage 51. Preferably, the second gas inlet channel 51 is located at the center of the top plate of the second chamber 5, so that the second precursor can be uniformly diffused into the second chamber 5, and then uniformly sprayed onto the surface of the substrate in the reaction chamber 6 through each first spraying hole 8, thereby ensuring the deposition effect.
In this embodiment, a second sealing ring 23 is disposed between the second air inlet port 21 and the second air inlet flange 22. The sealing performance between the second air inlet interface 21 and the second air inlet flange 22 is improved, and air inlet is facilitated.
In this embodiment, a third sealing ring 24 is disposed between the second air intake flange 22 and the top plate of the first chamber 4, and a fourth sealing ring 25 is disposed between the second air intake flange 22 and the top plate of the second chamber 5. The tightness of the second air inlet pipeline is further ensured.
In this embodiment, the first spray pipes 7 are provided with a plurality of first spray holes 8, and the first spray pipes 7 and the first spray holes 8 are alternately arranged. Further facilitating the uniform spraying of the first precursor and the second precursor layer by layer to the surface of the substrate in the reaction chamber 6. It should be noted that, in other embodiments, the first spraying pipes 7 and the first spraying holes 8 may be arranged in multiple rows and multiple columns, for example, one row of the first spraying pipes 7 and one row of the first spraying holes 8 alternate.
In this embodiment, the bottom plate 33 of the second chamber 5 is provided with a positioning hole 52, and the outlet end of the first shower pipe 7 is located in the positioning hole 52. On one hand, the positioning and installation of the first spray pipe 7 are facilitated, and on the other hand, the alignment and connection between the top plate of the second chamber 5 and the bottom plate 33 of the second chamber 5 are facilitated.
It should be noted that although the present invention has been described with reference to the preferred embodiments, the present invention is not limited thereto. The technical solution of the present invention can be used by anyone skilled in the art to make many possible variations and modifications, or to modify equivalent embodiments, without departing from the scope of the technical solution of the present invention, using the technical content disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments by the technical entity of the present invention should fall within the protection scope of the technical solution of the present invention, all without departing from the contents of the technical solution of the present invention.
Claims (10)
1. The utility model provides a ALD apparatus is with dividing chamber air inlet unit which characterized in that: including first air intake assembly (1), second air intake assembly (2) and spray assembly (3), be equipped with first cavity (4) and second cavity (5) mutually independent in spray assembly (3), first air intake assembly (1) and first cavity (4) intercommunication, first cavity (4) are equipped with and are used for to the jet-propelled first shower (7) of reaction chamber (6), second air intake assembly (2) and second cavity (5) intercommunication, second cavity (5) are equipped with and are used for to the jet-propelled first hole (8) that sprays of reaction chamber (6).
2. The sub-chamber gas inlet device for the ALD apparatus of claim 1, wherein: the first chamber (4) is positioned above the second chamber (5), and the first spray pipe (7) passes through the second chamber (5) and is communicated with the reaction chamber (6).
3. The sub-chamber gas inlet device for the ALD apparatus of claim 1, wherein: the first air inlet assembly (1) comprises a first air inlet interface (11) and a first air inlet flange (12) connected with the first air inlet interface (11), a first air inlet channel (41) is arranged on a top plate of the first cavity (4), and the first air inlet flange (12) is communicated with the first cavity (4) through the first air inlet channel (41).
4. The chamber-dividing gas inlet device for the ALD apparatus of claim 3, wherein: a first sealing ring (13) is arranged between the first air inlet flange (12) and the top plate of the first chamber (4).
5. The chamber-dividing gas inlet device for the ALD apparatus of claim 3, wherein: a flow homogenizing plate (42) for uniformly diffusing gas is arranged in the first chamber (4), and the first gas inlet channel (41) faces the flow homogenizing plate (42).
6. The chamber-dividing gas inlet device for the ALD apparatus of any one of claims 1 to 5, wherein: the second air inlet assembly (2) comprises a second air inlet interface (21) and a second air inlet flange (22) connected with the second air inlet interface (21), a second air inlet channel (51) is arranged on a top plate of the second chamber (5), and the second air inlet flange (22) penetrates through the second chamber (5) to be communicated with the second air inlet channel (51).
7. The sub-chamber gas inlet device for the ALD apparatus of claim 6, wherein: and a second sealing ring (23) is arranged between the second air inlet interface (21) and the second air inlet flange (22).
8. The sub-chamber gas inlet device for the ALD apparatus of claim 6, wherein: and a third sealing ring (24) is arranged between the second air inlet flange (22) and the top plate of the first chamber (4), and a fourth sealing ring (25) is arranged between the second air inlet flange (22) and the top plate (32) of the second chamber (5).
9. The chamber-dividing gas inlet device for the ALD apparatus of any one of claims 1 to 5, wherein: the first spraying pipes (7) are provided with a plurality of spraying holes (8), and the first spraying pipes (7) and the first spraying holes (8) are alternately arranged.
10. The chamber-dividing gas inlet device for the ALD apparatus of any one of claims 1 to 5, wherein: a positioning hole (52) is formed in the bottom plate (33) of the second chamber (5), and the outlet end of the first spraying pipe (7) is located in the positioning hole (52).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123325352.9U CN217173860U (en) | 2021-12-27 | 2021-12-27 | ALD equipment is with dividing chamber air inlet unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123325352.9U CN217173860U (en) | 2021-12-27 | 2021-12-27 | ALD equipment is with dividing chamber air inlet unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217173860U true CN217173860U (en) | 2022-08-12 |
Family
ID=82730807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123325352.9U Active CN217173860U (en) | 2021-12-27 | 2021-12-27 | ALD equipment is with dividing chamber air inlet unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217173860U (en) |
-
2021
- 2021-12-27 CN CN202123325352.9U patent/CN217173860U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2010140778A2 (en) | Showerhead for film depositing vacuum equipment | |
| JP4630226B2 (en) | Chemical vapor deposition method and apparatus using showerhead | |
| TWI767631B (en) | Gas distributors and semiconductor equipment in semiconductor equipment | |
| US9855575B2 (en) | Gas injector and cover plate assembly for semiconductor equipment | |
| US20030017268A1 (en) | .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity | |
| US20030159653A1 (en) | Manifold assembly for feeding reactive precursors to substrate processing chambers | |
| KR101132262B1 (en) | Gas injecting assembly and Apparatus for depositing thin film on wafer using the same | |
| KR20000051046A (en) | Method for introducing gases into a reactor chamber and a shower head used therein | |
| KR101804125B1 (en) | Substrate processing apparatus | |
| US11118262B2 (en) | Substrate processing apparatus having a gas-mixing manifold | |
| CN112695294A (en) | Semiconductor deposition reactor manifold | |
| WO2020063429A1 (en) | Air inlet apparatus for atomic layer deposition process and atomic layer deposition device | |
| CN108677167B (en) | Spraying device of semiconductor coating equipment, chemical vapor deposition equipment and operation method thereof | |
| KR20130074413A (en) | Substrate processing apparatus | |
| CN116103640A (en) | ALD reaction cavity device and ALD film plating equipment | |
| KR20090055434A (en) | Atomic layer deposition apparatus | |
| CN217173860U (en) | ALD equipment is with dividing chamber air inlet unit | |
| KR20120034087A (en) | Gas injecting assembly and apparatus for depositing thin film on wafer using the same | |
| CN110093592B (en) | Gas nozzle applied to chemical vapor deposition system | |
| CN114959651B (en) | Modularized ALD (atomic layer deposition) reaction gas distributor, system and method for preparing coating | |
| KR20080013568A (en) | A showerhead having a multi source for injection | |
| CN111058012A (en) | Air inlet device and semiconductor processing equipment | |
| CN218372508U (en) | Gas distribution device | |
| CN212175035U (en) | Gas spray head assembly for chemical vapor deposition equipment | |
| CN213624369U (en) | Gas spraying member and thin film deposition apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |