CN212175035U - Gas spray head assembly for chemical vapor deposition equipment - Google Patents
Gas spray head assembly for chemical vapor deposition equipment Download PDFInfo
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- CN212175035U CN212175035U CN202022714795.6U CN202022714795U CN212175035U CN 212175035 U CN212175035 U CN 212175035U CN 202022714795 U CN202022714795 U CN 202022714795U CN 212175035 U CN212175035 U CN 212175035U
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Abstract
The application relates to a gas spray head assembly for chemical vapor deposition equipment, which comprises a top cover plate fixedly connected to a dome, wherein a bottom cover plate is fixedly arranged on one side, close to a wafer, of the top cover plate, and a plate electrode extending towards the wafer is arranged on the side, far away from the top cover plate, of the bottom cover plate; the top cover plate is provided with a plurality of first air holes, the inner edges of the first air holes extend towards the bottom cover plate to form first air passages, the bottom cover plate is provided with second air holes corresponding to the first air holes, the first air passages extend into the second air holes, and the area between the top cover plate and the bottom cover plate is provided with second air passages; the electrode plate is provided with a reaction hole corresponding to the second air hole; a first gas source is arranged on one side, far away from the bottom cover plate, of the top cover plate, the first gas source supplies first gas to the first gas channel, the second gas channel is connected with a second gas source, and the second gas source supplies second gas to the second gas channel; the uniformity of the wafer film is improved.
Description
Technical Field
The present application relates to the field of wafer processing equipment, and more particularly, to a gas showerhead assembly for chemical vapor deposition equipment.
Background
Chemical vapor deposition is a chemical technology, which is a method for generating a film by performing a chemical reaction on the surface of a substrate by using one or more gas-phase compounds or simple substances containing film elements. Chemical vapor deposition high density plasma equipment is typically used to form thin films on the wafer surface.
As shown in fig. 1, in the conventional cvd high-density plasma apparatus, a gas transmission part is located in a circular dome 1 above a wafer, gas injection nozzles 2 are distributed at the top and the side of the circular dome 1, and the difference between the top and the bottom of the circular dome 1 is 150mm, which may cause a large difference in film uniformity of the wafer.
In view of the above-mentioned related technologies, the inventor believes that the height difference of the top and the bottom of the circular dome in the existing chemical vapor deposition high-density plasma apparatus is 150mm, which causes the concentration of the gas formed after the injection in the circular dome to be different, so that the uniformity difference of the plasma is large, and the uniformity of the wafer film cannot meet the process requirement.
Disclosure of Invention
In order to improve the uniformity of a wafer film, the application provides a gas shower head component for chemical vapor deposition equipment.
The application provides a gas shower head subassembly for chemical vapor deposition equipment adopts following technical scheme:
a gas shower head assembly for chemical vapor deposition equipment is arranged in a circular dome of the chemical vapor deposition equipment and comprises a top cover plate fixedly connected to the circular dome, a bottom cover plate is fixedly arranged on one side, close to a wafer, of the top cover plate, and an electrode plate extending towards the wafer is arranged on the side, far away from the top cover plate, of the bottom cover plate;
the top cover plate is provided with a plurality of first air holes, the inner edges of the first air holes extend towards the bottom cover plate to form first air passages, the bottom cover plate is provided with second air holes corresponding to the first air holes, the first air passages extend into the second air holes, and the area between the top cover plate and the bottom cover plate is provided with second air passages; the electrode plate is provided with a reaction hole corresponding to the second air hole;
one side of the top cover plate, which is far away from the bottom cover plate, is provided with a first gas source, the first gas source supplies first gas to the first gas passage, the second gas passage is connected with a second gas source, and the second gas source supplies second gas to the second gas passage.
Through adopting above-mentioned technical scheme, first gas is spout in following first air flue, the second gas is spout in following the second air flue, first gas reacts the required gas of production with the second gas in the reaction hole of plate electrode, then fall on the wafer, need not respectively from the top and the bottom jet-propelled of circular dome, all spout required gas in the reaction hole of the top of wafer, the required gas concentration in circular dome that forms after the injection is the same, make plasma's degree of consistency difference little, the degree of consistency of wafer film has been improved.
Preferably, the aperture size of the reaction hole is larger than the aperture size of the second air hole, and the electrode plate and the inner edge of the second air hole form a mixing tank.
Through adopting above-mentioned technical scheme, first gas and second gas diffuse to the mixing tank in the reaction hole, and the shared volume grow of reaction, and its mixture homogeneity also uprises, does benefit to the degree of consistency that improves the wafer film.
Preferably, the aperture of the reaction hole is linearly increased along the direction far away from the bottom cover plate.
Through adopting above-mentioned technical scheme, the first gas diffuses to the mixing tank in the reacting hole with the second gas, and the shared volume of reaction grow gradually, and its mixture homogeneity also becomes gradually, does benefit to the degree of consistency that improves the wafer film.
Preferably, the aperture of the reaction hole is gradually increased along the direction far away from the bottom cover plate in a step shape.
Through adopting above-mentioned technical scheme, first gas and the gaseous diffusion of second are to the mixing tank in the reaction hole, and the shared volume of reaction is the grow step by step, and its mixture degree of consistency also becomes step by step, does benefit to the degree of consistency that improves the wafer film.
Preferably, the inner wall of the reaction hole is provided with a flow stabilizing strip extending along the gas flow direction.
By adopting the technical scheme, the flow stabilizing strip is favorable for the flow stability of the generated required gas, avoids generating the unnecessary flow and is favorable for improving the uniformity of the wafer film.
Preferably, the flow stabilizing strips are spirally arranged along the inner wall of the reaction hole.
By adopting the technical scheme, the flow stabilizing strip is favorable for the flow stability of the generated required gas, and the spiral flow favorable for ensuring the gas mixing uniformity is generated simultaneously, so that the uniformity of the wafer film is improved.
Preferably, the inner wall of the reaction hole is provided with a honeycomb baffle.
By adopting the technical scheme, the flow stabilizing strip is beneficial to uniformly flowing out all parts of the generated required gas from the reaction holes, and is beneficial to improving the uniformity of the wafer film.
The application at least has the following technical scheme:
1. the first gas sprayed out of the first air passage and the second gas sprayed out of the second air passage are mixed and reacted in the reaction hole of the electrode plate to produce the required gas, the required gas is sprayed onto the wafer from the upper part of the wafer, and the concentration of the required gas formed after spraying in the circular dome is the same, so that the uniformity difference of the plasma is small, and the uniformity of the wafer film is improved.
2. The round dome structure is miniaturized to form a honeycomb-shaped spray head, so that the volume of equipment is reduced, the plasma density is increased, and an engineer can maintain and perform a better process conveniently.
Drawings
FIG. 1 is a schematic view of a prior art air injection structure in a circular dome;
fig. 2 is a top view of the top cover plate of the present invention;
FIG. 3 is a schematic vertical cross-sectional view of the top cover plate, the bottom cover plate and the electrode plate of the present invention;
fig. 4 is a schematic cross-sectional view illustrating the honeycomb baffle of the present invention.
Reference numerals: 1. a circular dome; 2. a gas injection nozzle; 3. a top cover plate; 4. a first air passage; 5. a bottom cover plate; 6. a second air passage; 7. an electrode plate; 8. a reaction well; 9. a mixing tank; 10. a flow stabilizing strip; 11. and (4) a honeycomb baffle.
Detailed Description
The present application is described in further detail below in conjunction with fig. 2-4.
The embodiment of the application discloses a gas shower head assembly for chemical vapor deposition equipment.
Referring to fig. 2 and 3, a gas shower head assembly for a chemical vapor deposition apparatus is provided in a circular dome 1 of the chemical vapor deposition apparatus, and includes a top cover plate 3 fixedly attached to the circular dome 1, and a wafer is located below the top cover plate 3. The top cover plate 3 may be provided in a circular, square or other shape and horizontally. A plurality of first gas pockets have been seted up to top apron 3, and the inner edge of first gas pocket extends down has first air flue 4, and the upside intercommunication of top apron 3 has first air supply, and first air supply supplies first gas to first air flue 4, and first gas is spout from first air flue 4 downwards. The first gas source is connected with a pipeline for conveying the first gas, and the end part of the pipeline is matched and arranged on the upper side of the top cover plate 3.
The side, namely the lower side, of the top cover plate 3 close to the wafer is fixedly welded or fixedly connected with a bottom cover plate 5 through bolts, and the whole shape of the bottom cover plate 5 is consistent with that of the top cover plate 3 and is horizontally arranged. The bottom cover plate 5 is provided with a second air hole corresponding to the first air hole, and the first air channel 4 extends into the second air hole. The area between top apron 3 and bottom apron 5 is second gas flue 6, and second gas flue 6 is connected with the second air supply, and the second gas supply supplies the second gas to second gas flue 6, and the second gas is spout from second gas flue 6 downwards. The second gas source is also connected with a pipeline for conveying the second gas, and the end part of the pipeline is installed at the periphery of the top cover plate 3 and the bottom cover plate 5 in a matching mode and surrounds the area between the top cover plate 3 and the bottom cover plate 5.
An electrode plate 7 extending downwards is arranged right below the bottom cover plate 5, and the shape of the electrode plate 7 is matched with that of the bottom cover plate 5, is also circular, square or other shapes, and is horizontally arranged. The electrode plate 7 is provided with a reaction hole 8 corresponding to the second air hole, the reaction hole 8 ejects plasma gas, namely required gas, and the aperture size of the reaction hole 8 is larger than that of the second air hole. The electrode plate 7 and the inner edge of the second air hole form a mixing tank 9, the mixing tank 9 is cylindrical, the first air downwards sprayed out from the first air channel 4 and the second air downwards sprayed out from the second air channel 6 diffuse into the mixing tank 9 in the upper end of the reaction hole 8, the volume occupied by the reaction is increased, the mixing uniformity is also increased, and the uniformity of the wafer film is improved.
As shown in fig. 4, the aperture of the reaction hole 8 is linearly gradually increased or stepped gradually increased along the direction away from the bottom cover plate 5, the inner wall of the reaction hole 8 is integrally provided with a flow stabilizing strip 10 extending along the airflow direction, and the flow stabilizing strip 10 is spirally arranged along the inner wall of the reaction hole 8. The first gas and the second gas are diffused into the mixing tank 9 in the reaction hole 8, the volume occupied by the reaction is gradually increased or gradually increased, the mixing uniformity of the first gas and the second gas is gradually increased, and the uniformity of the wafer film is improved. The flow stabilizing strips 10 are beneficial to generating the flow stability of the required gas, and meanwhile, the spiral flow which is beneficial to ensuring the gas mixing uniformity is generated, and the uniformity of the wafer film is improved.
In other embodiments, the inner wall of the reaction well 8 is provided with a honeycomb baffle 11, and the shape of the central well of the honeycomb baffle 11 may be circular or hexagonal, while the opening of the central well is oriented parallel to the opening of the reaction well 8. The flow stabilizing strips 10 are beneficial to uniformly flowing out all parts of the generated required gas from the reaction holes 8 and improving the uniformity of the wafer film.
The implementation principle of the embodiment is as follows: a first air channel 4 for spraying first gas and a second air channel 6 for spraying second gas are arranged, and the sprayed first gas and the second gas are reacted in a reaction hole 8 of an electrode plate 7 to produce required gas, and are fully mixed and ionized in a mixing tank 9. Plasma gas can fall on the wafer, need not respectively from the top and the bottom jet-propelled of circular dome 1, does benefit to the miniaturized setting that realizes circular dome 1 structure, does benefit to and reduces equipment volume. First gas passage 4, second gas passage 6 and reaction hole 8 let top apron 3, bottom apron 5 and plate electrode 7 constitute the shower head of honeycomb, have increased required gaseous mixed degree and plasma density, and the required gaseous concentration in circular dome 1 that forms after the injection is the same for the degree of consistency difference of plasma is little, has improved the degree of consistency of wafer film, makes things convenient for the engineer to maintain and carries out better technology.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (7)
1. A gas shower head assembly for chemical vapor deposition equipment is arranged in a circular dome (1) of the chemical vapor deposition equipment, and is characterized in that: the wafer-level chip mounter comprises a top cover plate (3) fixedly connected to a circular dome (1), wherein a bottom cover plate (5) is fixedly arranged on one side, close to a wafer, of the top cover plate (3), and an electrode plate (7) extending towards the wafer is arranged on the side, far away from the top cover plate (3), of the bottom cover plate (5);
the top cover plate (3) is provided with a plurality of first air holes, the inner edges of the first air holes extend towards the bottom cover plate (5) to form first air passages (4), the bottom cover plate (5) is provided with second air holes corresponding to the first air holes, the first air passages (4) extend into the second air holes, and the area between the top cover plate (3) and the bottom cover plate (5) is provided with second air passages (6); the electrode plate (7) is provided with a reaction hole (8) corresponding to the second air hole;
one side of the top cover plate (3) far away from the bottom cover plate (5) is provided with a first gas source, the first gas source supplies first gas to the first gas passage (4), the second gas passage (6) is connected with a second gas source, and the second gas source supplies second gas to the second gas passage (6).
2. The gas showerhead assembly for a chemical vapor deposition apparatus of claim 1, wherein: the aperture size of the reaction hole (8) is larger than that of the second air hole, and the electrode plate (7) and the inner edge of the second air hole form a mixing groove (9).
3. The gas showerhead assembly for a chemical vapor deposition apparatus of claim 1, wherein: the aperture of the reaction hole (8) is linearly and gradually increased along the direction far away from the bottom cover plate (5).
4. The gas showerhead assembly for a chemical vapor deposition apparatus of claim 1, wherein: the aperture of the reaction hole (8) is gradually increased along the direction far away from the bottom cover plate (5) in a step shape.
5. The gas showerhead assembly for a chemical vapor deposition apparatus of claim 1, wherein: and a steady flow strip (10) extending along the airflow direction is arranged on the inner wall of the reaction hole (8).
6. The gas showerhead assembly for a chemical vapor deposition apparatus of claim 5, wherein: the flow stabilizing strips (10) are spirally arranged along the inner wall of the reaction hole (8).
7. The gas showerhead assembly for a chemical vapor deposition apparatus of claim 1, wherein: the inner wall of the reaction hole (8) is provided with a honeycomb baffle (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022714795.6U CN212175035U (en) | 2020-11-23 | 2020-11-23 | Gas spray head assembly for chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022714795.6U CN212175035U (en) | 2020-11-23 | 2020-11-23 | Gas spray head assembly for chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212175035U true CN212175035U (en) | 2020-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022714795.6U Active CN212175035U (en) | 2020-11-23 | 2020-11-23 | Gas spray head assembly for chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212175035U (en) |
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2020
- 2020-11-23 CN CN202022714795.6U patent/CN212175035U/en active Active
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