CN216981514U - High voltage integrated circuit and semiconductor circuit - Google Patents

Abstract

The utility model relates to a high-voltage integrated circuit and a semiconductor circuit, wherein the high-voltage integrated circuit comprises an overcurrent protection circuit, a fault logic control circuit and an overcurrent enabling circuit; the overcurrent protection circuit comprises an overcurrent detection signal input end and an overcurrent protection signal output end, the overcurrent protection signal output end is connected with the fault logic control circuit, and the fault logic control circuit is used for outputting a fault signal to an external processor of the high-voltage integrated circuit; the overcurrent enabling circuit comprises an overcurrent enabling signal input end and an electronic switch, the overcurrent enabling signal input end is used for being connected with an external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch. The high-voltage integrated circuit supports the external processor to flexibly control the overcurrent protection function through the overcurrent enabling circuit, and can effectively reduce the occurrence of frequent shutdown caused by fault misoutput in the circuit electrifying stage.

Description

High-voltage integrated circuit and semiconductor circuit

Technical Field

The utility model relates to a high-voltage integrated circuit and a semiconductor circuit, and belongs to the technical field of semiconductor circuit application.

Background

A high Voltage Integrated circuit (hvic) is an Integrated circuit product for converting an MCU signal into a driving signal for driving a switching tube such as an IGBT. Generally, basic devices such as various switch tubes, diodes, voltage regulator tubes, resistors, capacitors and the like are integrated together to form a driving circuit, a pulse generating circuit, a delay circuit, a filter circuit, an overcurrent protection circuit, an overheat protection circuit, an undervoltage protection circuit, a bootstrap circuit and the like. When the HVIC works, on one hand, the HVIC receives a control signal of the external processor and drives a subsequent switching tube to work, and on the other hand, the HVIC also sends a related working state detection signal back to the external processor so as to realize the control of the working condition of the circuit.

In the related technology, the overcurrent protection circuit is integrated in the high-voltage integrated circuit, and when various overcurrent conditions occur, the overcurrent protection circuit can output related protection signals to the fault logic control circuit, so that the external processor receives the fault signals and acts in time to stop the operation of the circuit, and the safety and the reliability of the circuit are improved. However, in the current overcurrent protection circuit, when the high-voltage integrated circuit is just powered on or is in an initial state and is not stably operated temporarily, the overcurrent detection signal input end of the overcurrent protection circuit is difficult to avoid external interference, so that a fault signal is triggered to be output, the overcurrent protection circuit is easy to shut down frequently, and the operation efficiency of the circuit is influenced.

In summary, there is a need to solve the technical problems in the related art.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve a series of problems caused by the fact that an overcurrent protection circuit in an existing high-voltage integrated circuit is easily interfered by the outside, a fault signal is output by false triggering, and frequent shutdown is easily caused.

Specifically, the present invention discloses a high voltage integrated circuit, comprising:

the overcurrent protection circuit, the fault logic control circuit and the overcurrent enable circuit;

the overcurrent protection circuit comprises an overcurrent detection signal input end and an overcurrent protection signal output end, the overcurrent protection signal output end is connected with the fault logic control circuit, and the fault logic control circuit is used for outputting a fault signal to an external processor of the high-voltage integrated circuit;

the overcurrent enabling circuit comprises an overcurrent enabling signal input end and an electronic switch, the overcurrent enabling signal input end is used for being connected with the external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch.

Optionally, the high voltage integrated circuit further includes a driving circuit, an overvoltage protection circuit, and an over-temperature protection circuit.

Optionally, the driving circuit includes a high-voltage side driving circuit, an interlock circuit, and a low-voltage side driving circuit, and the high-voltage side driving circuit is connected to the low-voltage side driving circuit through the interlock circuit.

Optionally, the over-current protection circuit includes an action current over-current protection circuit and a PFC over-current protection circuit 212.

Optionally, the operating current over-current protection circuit includes:

the circuit comprises an action current detection signal input end, a first filter and a first level converter;

the input end of the action current detection signal is connected with the input end of the first filter, the output end of the first filter is connected with the input end of the first level shifter, the output end of the first level shifter is the output end of the overcurrent protection signal, and the output end of the first level shifter is connected with the fault logic control circuit;

the output end of the first filter is grounded through the electronic switch.

Optionally, the PFC overcurrent protection circuit 212 includes:

the PFC detection signal input end, the second filter and the second level converter;

the input end of the PFC detection signal is connected with the input end of the second filter, the output end of the second filter is connected with the input end of the second level converter, the output end of the second level converter is the output end of the overcurrent protection signal, and the output end of the second level converter is connected with the fault logic control circuit;

the output end of the second filter is grounded through the electronic switch.

Optionally, the electronic switch comprises at least one of a gate turn-off thyristor, a power transistor, a metal oxide semiconductor field effect transistor, an insulated gate bipolar transistor.

Optionally, the over-current enabling circuit comprises a first enabling circuit and a second enabling circuit.

Optionally, the first enable circuit includes a first enable signal input terminal, a third filter, a third level shifter and a first NMOS transistor;

the first enable signal input end is connected with the input end of the third filter, the output end of the third filter is connected with the input end of the third level shifter, the output end of the third level shifter is connected with the grid electrode of the first NMOS tube, the drain electrode of the first NMOS tube is connected with the overcurrent protection circuit, and the source electrode of the first NMOS tube is grounded.

The present invention also discloses a semiconductor circuit comprising: the high-voltage integrated circuit and the switch tube in the previous embodiment;

the high-voltage integrated circuit is connected to the switch tube and used for driving the switch tube.

The utility model discloses a high-voltage integrated circuit and a semiconductor circuit, wherein the high-voltage integrated circuit comprises an overcurrent protection circuit, a fault logic control circuit and an overcurrent enabling circuit; the overcurrent protection circuit comprises an overcurrent detection signal input end and an overcurrent protection signal output end, the overcurrent protection signal output end is connected with the fault logic control circuit, and the fault logic control circuit is used for outputting a fault signal to an external processor of the high-voltage integrated circuit; the overcurrent enabling circuit comprises an overcurrent enabling signal input end and an electronic switch, the overcurrent enabling signal input end is used for being connected with the external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch. The high-voltage integrated circuit supports the external processor to flexibly control the overcurrent protection function through the overcurrent enabling circuit, and can effectively reduce the occurrence of frequent shutdown caused by fault misoutput in the circuit electrifying stage.

Drawings

FIG. 1 is a diagram of a high voltage integrated circuit of the related art;

FIG. 2 is a simplified circuit diagram of a high voltage integrated circuit according to an embodiment of the present invention;

FIG. 3 is a simplified circuit schematic diagram of a high voltage integrated circuit according to an embodiment of the present invention;

FIG. 4 is a circuit schematic diagram of an implementation of a high voltage integrated circuit according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of a semiconductor circuit according to an embodiment of the present invention.

Detailed Description

It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention is described in detail below with reference to examples.

A high Voltage Integrated circuit (hvic) is an Integrated circuit product for converting an MCU signal into a driving signal for driving a switching tube such as an IGBT. Generally, the HVIC integrates various basic devices such as a switching tube, a diode, a voltage regulator tube, a resistor, a capacitor, etc. to form a driving circuit, a pulse generating circuit, a delay circuit, a filter circuit, an overcurrent protection circuit, an overheat protection circuit, an undervoltage protection circuit, a bootstrap circuit, etc. When the HVIC works, on one hand, the HVIC receives a control signal of the external processor and drives a subsequent switching tube to work, and on the other hand, the HVIC also sends a related working state detection signal back to the external processor so as to realize the control of the working condition of the circuit.

The high-voltage integrated circuit can be generally applied to a semiconductor circuit, and the semiconductor circuit provided by the utility model is a circuit module which integrates a power switch device, the high-voltage integrated circuit and the like together and is hermetically packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inverter voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc.

Specifically, referring to fig. 1, fig. 1 shows a schematic diagram of a high-voltage integrated circuit in the related art, in fig. 1, a power supply terminal VCC of the high-voltage integrated circuit may be used as a low-voltage side power supply positive terminal VDD of a semiconductor circuit, a voltage at VDD is generally 15V, and the high-voltage integrated circuit generally includes six signal input terminals for receiving upper and lower bridge arm PWM control signals output by a peripheral processor. The first upper bridge arm signal input end HIN1, the second upper bridge arm signal input end HIN2 and the third upper bridge arm signal input end HIN3 can be respectively used as a U-phase upper bridge arm signal input end UHIN, a V-phase upper bridge arm signal input end VHIN and a W-phase upper bridge arm signal input end WHIN of the semiconductor circuit; similarly, the first lower bridge arm signal input terminal LIN1, the second lower bridge arm signal input terminal LIN2 and the third lower bridge arm signal input terminal LIN3 of the high-voltage integrated circuit can be respectively used as a U-phase lower bridge arm signal input terminal ULIN, a V-phase lower bridge arm signal input terminal VLIN and a W-phase lower bridge arm signal input terminal WLIN of the semiconductor circuit.

Generally, the voltage ranges of input signals of a first upper bridge arm signal input end HIN1, a second upper bridge arm signal input end HIN2, a third upper bridge arm signal input end HIN3, a first lower bridge arm signal input end LIN1, a second lower bridge arm signal input end LIN2 and a third lower bridge arm signal input end LIN3 of the high-voltage integrated circuit can be 0-5V; a first power supply positive end VB1 of the high-voltage integrated circuit is used as a positive end UVB of a U-phase high-voltage side power supply end of the semiconductor circuit, a high-voltage side control output end HO1 of the high-voltage integrated circuit is used for outputting a driving signal for driving a U-phase upper bridge arm switching tube, a first power supply negative end VS1 of the high-voltage integrated circuit is used as a negative end UVS of the U-phase high-voltage side power supply end of the semiconductor circuit, and the filter capacitor can be connected between the positive end UVB of the U-phase high-voltage side power supply end of the semiconductor circuit and the negative end UVS of the U-phase high-voltage side power supply end of the semiconductor circuit; a second power supply positive end VB2 of the high-voltage integrated circuit is used as a positive end VVB of a V-phase high-voltage side power supply end of the semiconductor circuit, a high-voltage side control output end HO2 of the high-voltage integrated circuit is used for outputting a driving signal for driving a V-phase upper bridge arm switching tube, a second power supply negative end VS2 of the high-voltage integrated circuit is used as a negative end VVS of the V-phase high-voltage side power supply end of the semiconductor circuit, and a filter capacitor can be connected between the positive end VVB of the V-phase high-voltage side power supply end of the semiconductor circuit and the negative end VVS of the V-phase high-voltage side power supply end of the semiconductor circuit; the third power supply positive end VB3 of the high-voltage integrated circuit is used as the positive end WVB of the W-phase high-voltage side power supply end of the semiconductor circuit, the high-voltage side control output end HO3 of the high-voltage integrated circuit is used for outputting a driving signal for driving the W-phase upper bridge arm switching tube, the third power supply negative end VS3 of the high-voltage integrated circuit is used as the negative end WVS of the W-phase high-voltage side power supply end of the semiconductor circuit, and the filter capacitor can be connected between the positive end WVB of the W-phase high-voltage side power supply end of the semiconductor circuit and the negative end WVS of the W-phase high-voltage side power supply end.

In the semiconductor circuit, the high-voltage integrated circuit is used for transmitting 0-5V logic signals received by the HIN1, the HIN2, the HIN3, the LIN1, the LIN2 and the LIN3 to the HO1, the HO2, the HO3, the LO1, the LO2 and the LO3 respectively so as to control the work of the switching tube assembly and achieve the driving purpose. Wherein, HO1, HO2 and HO3 output logic signals of VS-VS +15V, and LO1, LO2 and LO3 output logic signals of 0-15V; input signals of the same phase cannot be at high level at the same time, that is, input signals of the first upper bridge arm signal input end HIN1 and the first lower bridge arm signal input end LIN1 cannot be at high level at the same time, input signals of the second upper bridge arm signal input end HIN2 and the second lower bridge arm signal input end LIN2 cannot be at high level at the same time, and input signals of the third upper bridge arm signal input end HIN3 and the third lower bridge arm signal input end LIN3 cannot be at high level at the same time. Therefore, an interlock circuit may be generally provided between the high-voltage side drive circuit and the low-voltage side drive circuit.

In order to improve the stability and reliability of the circuit operation, an overcurrent protection circuit, an overheat protection circuit, an undervoltage protection circuit, an overvoltage protection circuit and the like are generally arranged in the high-voltage integrated circuit, the circuits are respectively used for detecting various working condition signals of the high-voltage integrated circuit, such as signals of current, temperature or voltage and the like, when a preset signal threshold is reached, a protection signal is triggered through a trigger, the protection signal is input into a FAULT logic control circuit, the FAULT logic control circuit is generally used for outputting an Enable signal and a FAULT signal, wherein the Enable signal is used for controlling the working condition of a switching tube of the semiconductor circuit, and the FAULT signal is used for returning to an external processor so as to realize the working condition control of the high-voltage integrated circuit. Specifically, in general, when the Enable signal is a high level signal, the upper and lower bridge drive signals of the semiconductor circuit are locked regardless of the high and low levels; when the FAULT signal is a low level signal, the external processor detects the FAULT low level signal to trigger FAULT protection, for example, to disconnect the power supply of the high voltage integrated circuit, so as to protect the high voltage integrated circuit.

As mentioned above, the high voltage integrated circuit is generally integrated with an overcurrent protection circuit, and when various overcurrent conditions occur, the overcurrent protection circuit can output a related protection signal to the fault logic control circuit, so that the external processor receives the fault signal and timely acts to stop the operation of the high voltage integrated circuit, thereby improving the safety and reliability of the high voltage integrated circuit. However, in the current overcurrent protection circuit, when the high-voltage integrated circuit is just powered on or is in an initial state and is not stably operated temporarily, the overcurrent detection signal input end of the overcurrent protection circuit is difficult to avoid external interference, so that a fault signal is triggered to be output, the overcurrent protection circuit is easy to frequently stop, and the operation efficiency of the high-voltage integrated circuit is influenced.

To this end, in the embodiment of the present application, a high voltage integrated circuit is provided, referring to fig. 2, where the high voltage integrated circuit 20 mainly includes:

an overcurrent protection circuit 210, a fault logic control circuit 220 and an overcurrent enable circuit 230;

the overcurrent protection circuit 210 comprises an overcurrent detection signal input end and an overcurrent protection signal output end, the overcurrent protection signal output end is connected with the fault logic control circuit 220, and the fault logic control circuit 220 is used for outputting a fault signal to the external processor 10 of the high-voltage integrated circuit 20;

the over-current enabling circuit 230 comprises an over-current enabling signal input end and an electronic switch, wherein the over-current enabling signal input end is used for being connected with the external processor 10 of the high-voltage integrated circuit, and the over-current protection circuit 210 is grounded through the electronic switch.

In the embodiment of the present application, the high-voltage integrated circuit is additionally provided with the over-current enabling circuit 230, and the over-current enabling circuit 230 mainly serves as an interface for the external processor 10 to control the over-current protection function of the high-voltage integrated circuit to be turned on. Specifically, the over-current enabling circuit 230 includes an over-current enabling signal input terminal and an electronic switch, wherein the over-current enabling signal input terminal is used for connecting the external processor 10 of the high-voltage integrated circuit, and can receive a control signal for the electronic switch from the processor 10, and the control signal is used for controlling the electronic switch to be turned on or off. For example, the external processor 10 may input a pulse signal through the overcurrent enable signal input end, and when the pulse signal is at a high level, the electronic switch is turned on; conversely, when the pulse signal is at a low level, the electronic switch is turned off.

As can be known from the foregoing description of the over-current protection function in the conventional high-voltage integrated circuit, for the general over-current protection circuit 210, when an over-current condition is detected, a corresponding protection signal is output to the FAULT logic control circuit 220, where the protection signal is generally a level change signal, and after the FAULT logic control circuit 220 receives the protection signal, an Enable high-level signal and a FAULT low-level signal can be output, so as to implement the shutdown of the driving signal and the power-off of the high-voltage integrated circuit. In the embodiment of the present application, after the overcurrent enabling circuit 230 is set, since the overcurrent protection circuit 210 is grounded through the electronic switch in the overcurrent enabling circuit 230, when the electronic switch is turned on, the overcurrent protection circuit 210 is also grounded, and at this time, when an overcurrent is detected, the protection signal cannot be normally transmitted to the fault logic control circuit 220, so that the overcurrent protection function fails; on the contrary, when the electronic switch is turned off, the ground of the over-current protection circuit 210 fails, and at this time, when the over-current is detected, the protection signal can be normally transmitted to the fault logic control circuit 220, so that the over-current protection function is effective.

Therefore, it can be understood that the high voltage integrated circuit provided in the embodiment of the present application supports enabling the external processor 10 to control the on or off of the overcurrent protection function of the high voltage integrated circuit. In practical applications, the level type and duration of the pulse signal specifically output by the external processor 10 to the over-current enable signal input end of the over-current enable circuit 230 may be flexibly adjusted as required, for example, in some embodiments, it may be set that when the high-voltage integrated circuit is initially powered on, the external processor 10 inputs a high-level signal to the over-current enable signal input end of the over-current enable circuit 230, so that the over-current protection function of the high-voltage integrated circuit temporarily fails, the occurrence of a situation that the high-voltage integrated circuit is easily disturbed by the outside when being powered on or in an initial state and is temporarily not stably operated, which causes frequent shutdown of over-current protection is triggered, and the operation efficiency of the high-voltage integrated circuit is improved. After the high-voltage integrated circuit is powered on for a predetermined time, the external processor 10 can stop inputting a high-level signal to the overcurrent enable signal input end of the overcurrent enable circuit 230, at the moment, the overcurrent enable signal input end is at a low level, the electronic switch is turned off, the overcurrent protection function of the high-voltage integrated circuit is effective, and the safety and the stability of the circuit operation can be improved.

In some embodiments, the high voltage integrated circuit of the present application further includes a driving circuit, an overvoltage protection circuit and an over-temperature protection circuit, wherein the driving circuit may include a high voltage side driving circuit, an interlock circuit and a low voltage side driving circuit, and the high voltage side driving circuit is connected with the low voltage side driving circuit through the interlock circuit. The above circuits can be implemented by referring to the existing design, and are not described in detail herein.

In some embodiments, the electronic switches in the high voltage integrated circuits of the present application may employ conventional power electronics devices including, but not limited to, gate turn-off thyristors (GTOs), power transistors (GTRs), Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), and the like.

In some embodiments, referring to fig. 3, the overcurrent protection circuit 210 of the present application may include various types, for example, an operating current overcurrent protection circuit 211 and a PFC overcurrent protection circuit 212. At this time, the overcurrent enable circuit 230 may also be provided with a plurality of corresponding units corresponding to each overcurrent protection circuit. For example, the overcurrent enable circuit 230 includes a first enable circuit corresponding to the operating current overcurrent protection circuit 211 and a second enable circuit corresponding to the PFC overcurrent protection circuit 212. In this way, the first enabling circuit and the operating current overcurrent protection circuit 211 can independently implement flexible enabling of the operating current overcurrent protection function, and similarly, the second enabling circuit and the PFC overcurrent protection circuit 212 can also independently implement flexible enabling of the PFC overcurrent protection function.

Referring to fig. 3, in fig. 3, the operating current overcurrent protection circuit 211 may receive an overcurrent detection signal through an ITRIP port, and output a protection signal when it is determined that an overcurrent occurs; the overcurrent enable circuit 230 may receive an enable signal of the processor 10 through the first enable signal input terminal EN1, and may control the operation current overcurrent protection circuit 211 through the enable signal; the PFC overcurrent protection circuit 212 may receive an overcurrent detection signal through a PFCTRIP port, and output a protection signal when it is determined that an overcurrent occurs; the over-current enabling circuit 230 may receive an enabling signal of the processor 10 through a second enabling signal input terminal EN2, and the PFC over-current protection circuit 212 may be controlled through the enabling signal.

More specifically, referring to fig. 4, fig. 4 is a schematic circuit diagram illustrating a combined use of the multi-path over-current protection circuit 210 and the multi-path over-current enable circuit 230 provided in the present application. In fig. 4, the overcurrent protection circuit 210 includes an operating current overcurrent protection circuit 211 and a PFC overcurrent protection circuit 212, and the overcurrent enable circuit 230 includes a first enable circuit and a second enable circuit; the operation current overcurrent protection circuit 211 is used in combination with the first enable circuit, and the PFC overcurrent protection circuit 212 is used in combination with the second enable circuit.

The operating current overcurrent protection circuit 211 includes an operating current detection signal input terminal, a first filter 2111, and a first level shifter 2112; the action current detection signal input terminal is connected to the input terminal of the first filter 2111 via a flip-flop, which is used for determining whether a corresponding overcurrent occurs, and belongs to a conventional device of the overcurrent protection circuit 210, and will not be described additionally herein. The first filter 2111 is used for filtering the signal output by the flip-flop to output a high level signal, and the first level shifter 2112 converts the high level signal to output a low level signal, so as to trigger the FAULT logic control circuit 220 to output a FAULT low level signal for power-off protection. The output end of the first filter 2111 is grounded through the electronic switch of the first enable circuit, when the electronic switch of the first enable circuit is turned on, if the operating current overcurrent protection circuit 211 performs a protection operation, the high level signal output by the first filter 2111 is grounded, that is, the input end of the first level shifter 2112 is always grounded, at this time, the first level shifter 2112 outputs the high level signal, the fault logic control circuit 220 does not operate, and the operating current overcurrent protection circuit 211 fails. When the electronic switch of the first enable circuit is turned off, if the operating current overcurrent protection circuit 211 performs a protection operation, the high-level signal output from the first filter 2111 is input to the input terminal of the first level shifter 2112, and at this time, the first level shifter 2112 outputs a low-level signal, the fault logic control circuit 220 operates, and the operating current overcurrent protection circuit 211 is enabled.

In some embodiments, the first enable circuit of the present application includes a first enable signal input terminal, a third filter 2311, a third level shifter 2312 and a first NMOS transistor Q1;

the first enable signal input end is connected to the input end of the third filter 2311, the output end of the third filter 2311 is connected to the input end of the third level shifter 2312, the output end of the third level shifter 2312 is connected to the gate of the first NMOS transistor Q1, the drain of the first NMOS transistor Q1 is connected to the overcurrent protection circuit 210, and the source of the first NMOS transistor Q1 is grounded.

In the embodiment of the application, when the external processor 10 inputs a high level signal from the first enable signal input terminal EN1, the third filter 2311 filters the high level signal and the third level converter 2312 outputs a low level signal, and the first NMOS transistor Q1 does not operate and has no influence on the operating current overcurrent protection circuit 211 connected to the drain thereof. When the external processor 10 inputs a low level signal from the first enable signal input terminal EN1, the third filter 2311 filters the low level signal and outputs a high level signal, the third level converter 2312 outputs a high level signal, the first NMOS transistor Q1 is turned on, and at this time, in the operation current overcurrent protection circuit 211 connected to the drain of the first NMOS transistor Q1, the input terminal of the first level converter 2112 is pulled down to a low level, so that the high level detected by the itrp is invalid, and the circuit does not perform an overcurrent protection operation.

Referring to fig. 4, the PFC overcurrent protection circuit 212 of the present application includes a PFC detection signal input terminal, a second filter 2121, and a second level shifter 2122; similarly, the PFC detection signal input terminal is connected to an input terminal of the second filter 2121 via a flip-flop. The second filter 2121 is configured to filter a signal output by the flip-flop to output a high level signal, and the second level shifter 2122 converts the high level signal to output a low level signal, so as to trigger the FAULT logic control circuit 220 to output a FAULT low level signal for power-off protection. The output terminal of the second filter 2121 is grounded via the electronic switch of the second enable circuit, and when the electronic switch of the second enable circuit is turned on, if the PFC overcurrent protection circuit 212 performs a protection operation, the high level signal output by the second filter 2121 is grounded, that is, the input terminal of the second level shifter 2122 is always grounded, at this time, the second level shifter 2122 outputs the high level signal, the fault logic control circuit 220 does not operate, and the operation current overcurrent protection circuit 211 fails. When the electronic switch of the second enable circuit is turned off, if the PFC overcurrent protection circuit 212 performs a protection operation, the high level signal output by the second filter 2121 is input to the input terminal of the second level shifter 2122, and at this time, the second level shifter 2122 outputs a low level signal, the fault logic control circuit 220 operates, and the PFC overcurrent protection circuit 212 is enabled.

In some embodiments, the second enable circuit of the present application includes a second enable signal input terminal, a fourth filter 2321, a fourth level shifter 2322 and a second NMOS transistor Q2;

the second enable signal input terminal is connected to the input terminal of the fourth filter 2321, the output terminal of the fourth filter 2321 is connected to the input terminal of the fourth level shifter 2322, the output terminal of the fourth level shifter 2322 is connected to the gate of the second NMOS transistor Q2, the drain of the second NMOS transistor Q2 is connected to the overcurrent protection circuit 210, and the source of the second NMOS transistor Q2 is grounded.

In this embodiment, when the external processor 10 inputs a high level signal from the second enable signal input terminal EN1, the fourth filter 2321 filters the high level signal and outputs a low level signal, the fourth level shifter 2322 outputs a low level signal, and the second NMOS transistor Q2 does not operate and has no influence on the operating current overcurrent protection circuit 211 connected to the drain thereof. When the external processor 10 inputs a low-level signal from the second enable signal input terminal EN1, the fourth filter 2321 outputs a low-level signal after filtering, the fourth level shifter 2322 outputs a high-level signal, and the second NMOS transistor Q2 is turned on, at this time, in the PFC overcurrent protection circuit 212 connected to the drain of the second NMOS transistor Q2, the input terminal of the second level shifter 2122 is pulled down to a low level, so that the high level detected by itrp is invalid, and the circuit does not perform an overcurrent protection action.

It can be understood that the specific type of the switch tube and the specific structure and number of the enable circuits in the embodiment of the present application can be flexibly selected according to the needs, which is not limited in the present application.

In the embodiment of the present application, referring to fig. 5, a semiconductor circuit is further provided, where the semiconductor circuit includes the high voltage integrated circuit 20 and the switching tube 30 in the foregoing embodiment;

the high voltage integrated circuit 20 is connected to the switch tube 30, and the high voltage integrated circuit 20 is used for driving the switch tube 30.

It is to be understood that the contents of the above-mentioned embodiments of the high voltage integrated circuit are all applicable to this embodiment of the semiconductor circuit, the functions implemented by this embodiment of the semiconductor circuit are the same as those of the above-mentioned embodiment of the high voltage integrated circuit, and the advantageous effects achieved by this embodiment of the semiconductor circuit are also the same as those achieved by the above-mentioned embodiment of the high voltage integrated circuit.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the utility model.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (10)

1. A high voltage integrated circuit, comprising:

the overcurrent protection circuit, the fault logic control circuit and the overcurrent enable circuit;

the overcurrent protection circuit comprises an overcurrent detection signal input end and an overcurrent protection signal output end, the overcurrent protection signal output end is connected with the fault logic control circuit, and the fault logic control circuit is used for outputting a fault signal to an external processor of the high-voltage integrated circuit;

the overcurrent enabling circuit comprises an overcurrent enabling signal input end and an electronic switch, the overcurrent enabling signal input end is used for being connected with the external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch.

2. The high voltage integrated circuit of claim 1, further comprising a driver circuit, an over-voltage protection circuit, and an over-temperature protection circuit.

3. The high voltage integrated circuit of claim 2, wherein the driver circuit comprises a high voltage side driver circuit, an interlock circuit, and a low voltage side driver circuit, the high voltage side driver circuit and the low voltage side driver circuit being connected through the interlock circuit.

4. The high voltage integrated circuit of claim 1, wherein the over-current protection circuit comprises an active current over-current protection circuit and a PFC over-current protection circuit.

5. The high voltage integrated circuit of claim 4, wherein the operating current over-current protection circuit comprises:

the circuit comprises an action current detection signal input end, a first filter and a first level shifter;

the input end of the action current detection signal is connected with the input end of the first filter, the output end of the first filter is connected with the input end of the first level shifter, the output end of the first level shifter is the output end of the overcurrent protection signal, and the output end of the first level shifter is connected with the fault logic control circuit;

the output end of the first filter is grounded through the electronic switch.

6. The high voltage integrated circuit of claim 4, wherein the PFC over-current protection circuit comprises:

the PFC detection signal input end, the second filter and the second level converter;

the input end of the PFC detection signal is connected with the input end of the second filter, the output end of the second filter is connected with the input end of the second level converter, the output end of the second level converter is the output end of the overcurrent protection signal, and the output end of the second level converter is connected with the fault logic control circuit;

the output end of the second filter is grounded through the electronic switch.

7. The high voltage integrated circuit of any one of claims 1-6, wherein the electronic switch comprises at least one of a gate turn-off thyristor, a power transistor, a metal oxide semiconductor field effect transistor, and an insulated gate bipolar transistor.

8. The high voltage integrated circuit of claim 7, wherein the over current enable circuit comprises a first enable circuit and a second enable circuit.

9. The high voltage integrated circuit of claim 8, wherein the first enable circuit comprises a first enable signal input, a third filter, a third level shifter and a first NMOS transistor;

the first enable signal input end is connected with the input end of the third filter, the output end of the third filter is connected with the input end of the third level shifter, the output end of the third level shifter is connected with the grid electrode of the first NMOS tube, the drain electrode of the first NMOS tube is connected with the overcurrent protection circuit, and the source electrode of the first NMOS tube is grounded.

10. A semiconductor circuit comprising a high voltage integrated circuit according to any one of claims 1 to 9 and a switching transistor;

the high-voltage integrated circuit is connected to the switch tube and used for driving the switch tube.

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