CN216929980U - Power amplifier with controllable voltage breakdown - Google Patents

Power amplifier with controllable voltage breakdown Download PDF

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Publication number
CN216929980U
CN216929980U CN202220257867.5U CN202220257867U CN216929980U CN 216929980 U CN216929980 U CN 216929980U CN 202220257867 U CN202220257867 U CN 202220257867U CN 216929980 U CN216929980 U CN 216929980U
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China
Prior art keywords
power amplifier
power
voltage
feedback control
control path
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CN202220257867.5U
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Chinese (zh)
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黄定龙
程知群
乐超
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Hangzhou University Of Electronic Science And Technology Fuyang Institute Of Electronic Information Co ltd
Hangzhou Hengchuang Microelectronics Co ltd
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Hangzhou University Of Electronic Science And Technology Fuyang Institute Of Electronic Information Co ltd
Hangzhou Hengchuang Microelectronics Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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Abstract

The utility model discloses a voltage breakdown controllable power amplifier, wherein the grid electrode of a power amplifying tube M1 is connected with an input power signal, the source electrode of the power amplifying tube M1 is grounded, and the drain electrode of the power amplifying tube M1 is connected with a power supply end VDD and outputs the power supply end VDD to a load; and a feedback control path is further arranged, the feedback control path is connected with the grid electrode and the drain electrode of the power amplifying tube M1 and is used for detecting the output voltage of the drain electrode of the power amplifying tube M1, when the output voltage is greater than a preset control voltage, the feedback control path is conducted to enable the drain electrode and the grid electrode of the power amplifying tube M1 to be communicated, otherwise, the feedback control path is cut off. By adopting the technical scheme of the utility model, the output voltage of the power amplifier tube M1 is controlled below the breakdown voltage by arranging the feedback control path, so that the reliability of the radio frequency power amplifier is improved.

Description

Power amplifier with controllable voltage breakdown
Technical Field
The utility model relates to the technical field of radio frequency power amplifiers, in particular to a power amplifier with controllable voltage breakdown.
Background
The rf power amplifier is an important component module of the communication system, and is responsible for the amplification and power output of the rf signal, and the performance and reliability thereof have an important influence on the whole transmitting system. With the rapid development of wireless communication technology and wireless communication systems, more stringent requirements are placed on the performance of the radio frequency power amplifier. In order to satisfy the linear range required for signal transmission, the rf power amplifier generally uses a power back-off technique, which makes the peak output power of the rf power amplifier much higher than the average output power. Referring to fig. 1, a circuit structure of a conventional power amplifier is shown, when the rf power amplifier outputs at a peak power, a voltage difference between an output node D and an input node G reaches a maximum value, and the rf power amplifier is at risk of breakdown. This risk is fatal to the rf power amplifier itself and even to the entire communication system.
Therefore, it is necessary to provide a technical solution to solve the technical problems in the prior art.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is necessary to provide a power amplifier with controllable voltage breakdown, in which a feedback control path is provided to control the output voltage of the power amplifier transistor M1 below the breakdown voltage, so as to improve the reliability of the rf power amplifier.
In order to solve the technical problems in the prior art, the technical scheme of the utility model is as follows:
a voltage breakdown controllable power amplifier is characterized in that a grid electrode of a power amplifying tube M1 is connected with an input power signal, a source electrode of the power amplifying tube M1 is grounded, and a drain electrode of the power amplifying tube M1 is connected with a power supply end VDD and outputs the power supply end VDD to a load; and a feedback control path is further arranged, the feedback control path is connected with the grid electrode and the drain electrode of the power amplifying tube M1 and is used for detecting the output voltage of the drain electrode of the power amplifying tube M1, when the output voltage is greater than a preset control voltage, the feedback control path is conducted to enable the drain electrode and the grid electrode of the power amplifying tube M1 to be communicated, otherwise, the feedback control path is cut off.
As a further improvement, the feedback control path adopts a PMOS transistor M2, wherein the drain of the PMOS transistor M2 is connected to the drain of the power amplifier transistor M1, the source of the PMOS transistor M2 is connected to the gate of the power amplifier transistor M1, and the gate of the PMOS transistor M2 is connected to a preset control voltage.
As a further improvement, the preset control voltage is smaller than the breakdown voltage of the power amplifier tube M1.
Compared with the prior art, the output voltage of the output node of the power amplifier is shaped by the PMOS controlled by the preset control voltage Vctrl, the peak clipping is carried out on the output voltage exceeding the preset control voltage Vctrl, the output voltage of the D of the power amplifier tube M1 is controlled below the Vctrl, and the effect of controllable voltage breakdown of the power amplifier is achieved.
Drawings
Fig. 1 is a topology diagram of a circuit configuration of a conventional power amplifier.
Fig. 2 is a circuit topology diagram of the rf power amplifier with controllable voltage breakdown according to the present invention.
Fig. 3 is a circuit topology diagram of another preferred embodiment of the present invention.
The following specific embodiments will further illustrate the utility model in conjunction with the above-described figures.
Detailed Description
The technical solution provided by the present invention will be further explained with reference to the accompanying drawings.
The utility model provides a power amplifier with controllable voltage breakdown, and referring to fig. 2, a circuit structure topological diagram of a radio frequency power amplifier with controllable voltage breakdown is shown, wherein the connection of a power amplifying tube M1, a power amplifier input AC, a power amplifier Load and a power amplifier working voltage VDD is shown, wherein the grid of the power amplifying tube M1 is connected with an input power signal, the source of the power amplifying tube M1 is grounded, and the drain of the power amplifying tube M1 is connected with a power supply terminal VDD and outputs the power supply terminal VDD to a Load; the utility model also provides a feedback control path which is connected with the grid electrode and the drain electrode of the power amplifying tube M1 and used for detecting the output voltage of the drain electrode of the power amplifying tube M1, when the output voltage is larger than the preset control voltage, the feedback control path is conducted to enable the drain electrode and the grid electrode of the power amplifying tube M1 to be communicated, otherwise, the feedback control path is cut off.
Referring to fig. 3, which shows a circuit topology diagram of another preferred embodiment of the present invention, a PMOS transistor M2 is used as a feedback control path, wherein a drain of the PMOS transistor M2 is connected to a drain of the power amplifier transistor M1, a source of the PMOS transistor M2 is connected to a gate of the power amplifier transistor M1, and a gate of the PMOS transistor M2 is connected to a preset control voltage Vctrl. The control voltage Vctrl is set to be a PMOS control voltage, and the preset voltage value is smaller than the breakdown voltage of the power amplifier tube M1.
In the circuit, a voltage breakdown controllable radio frequency power amplifier circuit structure comprises a power amplifier tube M1 and a PMOS M2 controlled by Vctl voltage. For PMOS M2, the voltage at its drain D equals VD at node D M1 and the voltage at its gate g equals Vctrl. When the voltage at the point d is less than the voltage at the point g, the PMOS M2 is turned off, and when the voltage at the point d is greater than or equal to the voltage at the point g, the PMOS M2 is turned on. Therefore, when the voltage of VD is less than Vctl, M2 is turned off, when the voltage of VD is greater than or equal to Vctl, M2 is turned on, a feedback path is provided for the voltage VD exceeding Vctl, the VD part higher than Vctrl is fed back to the input end, the voltage difference between D and G of the power amplifier tube M1 is limited within Vctrl, and the effect of controllable voltage breakdown of the power amplifier can be achieved as long as Vctrl is controlled below the breakdown voltage of the power amplifier.
The above description of the embodiments is only intended to facilitate the understanding of the method of the utility model and its core idea. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, it is possible to make various improvements and modifications to the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (4)

1. A voltage breakdown controllable power amplifier is characterized in that a grid electrode of a power amplifying tube M1 is connected with an input power signal, a source electrode of the power amplifying tube M1 is grounded, and a drain electrode of the power amplifying tube M1 is connected with a power supply end VDD and outputs the power supply end VDD to a load; the power amplifier is characterized in that a feedback control path is further arranged, the feedback control path is connected with the grid electrode and the drain electrode of the power amplifier tube M1 and is used for detecting the output voltage of the drain electrode of the power amplifier tube M1, when the output voltage is larger than a preset control voltage, the feedback control path is conducted to enable the drain electrode and the grid electrode of the power amplifier tube M1 to be communicated, and otherwise, the feedback control path is cut off.
2. The power amplifier of claim 1, wherein the feedback control path is implemented using a PMOS transistor M2.
3. The power amplifier of claim 2, wherein the drain of the PMOS transistor M2 is connected to the drain of the power amplifier transistor M1, the source of the PMOS transistor M2 is connected to the gate of the power amplifier transistor M1, and the gate of the PMOS transistor M2 is connected to a predetermined control voltage.
4. The power amplifier of claim 1, wherein the predetermined control voltage is less than the breakdown voltage of the power amplifier transistor M1.
CN202220257867.5U 2022-02-08 2022-02-08 Power amplifier with controllable voltage breakdown Active CN216929980U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202220257867.5U CN216929980U (en) 2022-02-08 2022-02-08 Power amplifier with controllable voltage breakdown

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202220257867.5U CN216929980U (en) 2022-02-08 2022-02-08 Power amplifier with controllable voltage breakdown

Publications (1)

Publication Number Publication Date
CN216929980U true CN216929980U (en) 2022-07-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202220257867.5U Active CN216929980U (en) 2022-02-08 2022-02-08 Power amplifier with controllable voltage breakdown

Country Status (1)

Country Link
CN (1) CN216929980U (en)

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