CN216390917U - Doherty radio frequency power amplifier - Google Patents
Doherty radio frequency power amplifier Download PDFInfo
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- CN216390917U CN216390917U CN202122705452.8U CN202122705452U CN216390917U CN 216390917 U CN216390917 U CN 216390917U CN 202122705452 U CN202122705452 U CN 202122705452U CN 216390917 U CN216390917 U CN 216390917U
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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Abstract
The embodiment of the utility model provides a Doherty radio-frequency power amplifier, which comprises a driving amplifier, a carrier input matching network, a carrier power amplifier, a peak input matching network, a peak power amplifier, a first output matching network and a second output matching network, wherein the driving amplifier is connected with the carrier input matching network; wherein the carrier input matching network and the first output matching network each include a phase compensation network for 90 degree phase shift and impedance transformation; the phase compensation network comprises a high-pass T-type network, a high-pass pi-type network, a low-pass T-type network and a low-pass pi-type network. The Doherty radio-frequency power amplifier has the advantages of small layout area and high power addition efficiency.
Description
Technical Field
The utility model relates to the technical field of radio frequency integrated circuits, in particular to a Doherty radio frequency power amplifier.
Background
In order to fully utilize frequency spectrum resources and improve data transmission rate in modern wireless communication systems, a signal system with a high peak-to-average power ratio (PAPR) is adopted for modulation signals. High peak-to-average ratio signals place stringent requirements on the linearity of the radio frequency power amplifier. In order to ensure undistorted transmission of signals, wireless communication systems require that the rf power amplifier operate in a power back-off state away from the power compression point to ensure linear amplification of the rf signal. However, the efficiency of the rf power amplifier is usually designed to be the highest near the saturation region, and the efficiency of the power back-off point is significantly reduced. In order to improve the efficiency of the rf power amplifier in power back-off, the Doherty structure is a common method for designing the rf power amplifier.
A Doherty rf power amplifier of the related art generally includes a driver amplifier, a power divider, a main power amplifier, an auxiliary power amplifier, a power combiner, and a quarter-wavelength transmission line. Referring to fig. 1, fig. 1 is a schematic circuit structure diagram of a Doherty rf power amplifier in the related art, wherein an input signal is amplified by a driver amplifier, and then the input power is divided into two parts by a power divider, one part is input to an input end of a main power amplifier, and the other part is connected to an input end of an auxiliary power amplifier through a quarter-wavelength transmission line. The output end of the main power amplifier is connected to the first input end of the power synthesizer through a quarter-wavelength transmission line, the output end of the auxiliary power amplifier is directly connected to the second input end of the power synthesizer, and the output end of the power synthesizer is connected to the output load. The operating principle of the Doherty rf power amplifier in the related art is as follows: the main power amplifier is biased in Class AB or Class B, and the auxiliary power amplifier is biased in Class C. In a low output power state, the auxiliary power amplifier is in a closed state, and the load impedance of the main power amplifier is 2 Ropt. Under the high output power state, the auxiliary power amplifier is opened, the load impedance of the main power amplifier is changed from 2Ropt to Ropt along with the increase of the input power, the load impedance of the auxiliary power amplifier is gradually reduced from an infinite value to Ropt along with the increase of the input power, and the output of the two amplifiers is subjected to power synthesis by the power synthesizer. Due to this load modulation variation, the Doherty rf power amplifier exhibits a high efficiency at power back-off.
However, the power divider and the quarter-wavelength transmission line of the Doherty rf power amplifier in the related art are too large in size to be implemented on a chip, and especially in the Sub-6GHz band, the lower the frequency is, the longer the quarter-wavelength transmission line is. The small size of monolithic microwave integrated circuits requires the use of small-sized passive devices in the design of Doherty rf power amplifiers using integrated circuit technology.
Therefore, there is a need to provide a novel wideband Doherty rf power amplifier with compact size and capable of being implemented by integrated circuit technology to solve the above problems.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the prior art, the utility model provides the Doherty radio-frequency power amplifier with small layout area and high power addition efficiency.
In order to solve the above technical problem, an embodiment of the present invention provides a Doherty rf power amplifier, which includes a driver amplifier, a carrier input matching network, a carrier power amplifier, a peak input matching network, a peak power amplifier, a first output matching network, and a second output matching network;
the input end of the drive amplifier is used as the input end of the Doherty radio frequency power amplifier;
the output end of the drive amplifier is respectively connected with the input end of the carrier input matching network and the input end of the peak input matching network;
the output end of the carrier input matching network is connected to the input end of the carrier power amplifier;
the output end of the carrier power amplifier is connected to the input end of the first output matching network;
the output end of the peak input matching network is connected to the input end of the peak power amplifier;
the output end of the peak power amplifier is respectively connected to the input end of the second output matching network and the output end of the first output matching network;
an output end of the second output matching network is used as an output end of the Doherty radio-frequency power amplifier and is used for connecting a system load;
wherein the carrier input matching network and the first output matching network each include a phase compensation network for 90 degree phase shift and impedance transformation;
the phase compensation network is any one of a high-pass T-type network, a high-pass pi-type network, a low-pass T-type network and a low-pass pi-type network.
Preferably, the carrier input matching network is a high-pass T-type network or a high-pass pi-type network; the first output matching network is a low-pass T-type network or a low-pass pi-type network.
Preferably, the carrier input matching network is a high-pass T-type network; the first output matching network is a low-pass pi-type network.
Preferably, the driving amplifier, the carrier power amplifier and the peak power amplifier are all implemented by transistors.
Preferably, the carrier input matching network includes a third inductor, a second capacitor, and a third capacitor; the first end of the second capacitor is used as the input end of the carrier input matching network, and the first end of the second capacitor is connected to the output end of the driving amplifier; the second end of the second capacitor is connected to the first end of the third capacitor and the first end of the third inductor respectively; the second end of the third inductor is connected to the ground; a second end of the third capacitor is used as an output end of the carrier input matching network;
the first output matching network comprises a fifth capacitor, a sixth capacitor and a fourth inductor; a first end of the fourth inductor is used as an input end of the first output matching network, and the first end of the fourth inductor is respectively connected to an output end of the carrier power amplifier and a first end of the fifth capacitor; a second end of the fourth inductor is used as an output end of the peak power amplifier, and the second end of the fourth inductor is connected to a first end of the sixth capacitor; a second end of the fifth capacitor is connected to ground; the second end of the sixth capacitor is connected to ground.
Preferably, the driving amplifier includes a first inductor, a second inductor, a first capacitor, a first transistor, and a first bias circuit; a first end of the first capacitor is used as an input end of the driving amplifier, the first end of the first capacitor is connected to the ground after being connected with the first inductor in series, a second end of the first capacitor is respectively connected to a base of the first transistor and an output end of the first bias circuit, an emitter of the first transistor is connected to the ground, a collector of the first transistor is used as an output end of the driving amplifier, and a collector of the first transistor is respectively connected to a second end of the second inductor, an input end of the carrier input matching network and an input end of the peak input matching network; the first end of the second inductor is connected to a power supply voltage; the input end of the first bias circuit is connected to a reference voltage.
Preferably, the carrier power amplifier includes a second bias circuit and a second transistor; the base electrode of the second transistor is used as the input end of the carrier power amplifier, and the base electrodes of the second transistor are respectively connected to the second end of the third capacitor and the output end of the second bias circuit; an emitter of the second transistor is connected to ground; a collector of the second transistor is used as an output end of the carrier power amplifier; the input end of the second bias circuit is connected to a reference voltage.
Preferably, the peak input matching network comprises a fourth capacitor; a first end of the fourth capacitor is used as an input end of the peak input matching network, and the first end of the fourth capacitor is connected to a collector electrode of the first transistor; a second end of the fourth capacitor is used as an output end of the peak value input matching network;
the peak power amplifier comprises a third bias circuit and a third transistor; the base electrode of the third transistor is used as the input end of the peak power amplifier, and the base electrode of the third transistor is connected to the second end of the fourth capacitor and the output end of the third bias circuit; an emitter of the third transistor is connected to ground; the collector of the third transistor is used as the output end of the peak power amplifier; the input terminal of the third bias circuit is connected to a reference voltage.
Preferably, the second output matching network includes a fifth inductor, a sixth inductor, a seventh capacitor, and an eighth capacitor; a first end of the fifth inductor is used as an input end of the second output matching network, and the first end of the fifth inductor is respectively connected to a collector electrode of the third transistor and a second end of the sixth inductor; a first end of the sixth inductor is connected to a power supply voltage; a second end of the fifth inductor is connected to a first end of the seventh capacitor and a first end of the eighth capacitor respectively; a second end of the seventh capacitor is connected to ground; a second end of the eighth capacitor is used as an output end of the second output matching network, and the second end of the eighth capacitor is connected to the first end of the seventh inductor; a second terminal of the seventh inductor is connected to ground.
Preferably, the carrier input matching network, the peak input matching network, the first output matching network, and the second output matching network are lumped parameter circuits.
Compared with the prior art, the Doherty radio-frequency power amplifier removes a power divider with larger size in the prior art, the carrier input matching network is arranged in front of the input end of the carrier power amplifier, and the peak input matching network is arranged in front of the input end of the peak power amplifier. The setting enables uniform or non-uniform power distribution of input power to be achieved through the impedance value of the carrier input matching network and the impedance value of the peak input matching network, and therefore the power divider with a large size can be replaced. The output of the carrier power amplifier is connected to the input of a first output matching network, which each include a phase compensation network for 90 degree phase shift and impedance transformation. The structure enables the first output matching network to simultaneously play the role of a quarter-wavelength impedance transformation line, and 90-degree phase shift is realized. Meanwhile, the carrier input matching network comprises a phase compensation network to ensure that the combined power of the carrier power amplifier and the peak power amplifier is the maximum when the output power is high, so that the power additional efficiency of the Doherty radio-frequency power amplifier is high. In addition, the circuit replaces a quarter-wavelength impedance transformation line in the related art, so that the layout area of the Doherty radio-frequency power amplifier is small.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the utility model will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings, there is shown in the drawings,
fig. 1 is a schematic circuit diagram of a Doherty rf power amplifier in the related art;
FIG. 2 is a schematic circuit diagram of a Doherty RF power amplifier of the present invention;
fig. 3 is a schematic diagram of an applied circuit structure of an embodiment of the Doherty rf power amplifier of the present invention;
FIG. 4 is a circuit diagram of a high-pass T-network of the Doherty RF power amplifier of the present invention;
FIG. 5 is a circuit diagram of a low pass T-network of the Doherty RF power amplifier of the present invention;
FIG. 6 is a circuit diagram of a high-pass pi-type network of the Doherty RF power amplifier of the present invention;
FIG. 7 is a circuit diagram of a low pass pi network of the Doherty RF power amplifier of the present invention;
fig. 8 is a schematic diagram of an application circuit structure of another embodiment of the Doherty rf power amplifier according to the embodiment of the present invention;
fig. 9 is a comparison diagram of the amplitude gain curves of the Doherty rf power amplifier provided by the embodiment of the present invention and a Class AB rf power amplifier of the related art.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the utility model. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
(embodiment one)
The embodiment of the utility model provides a Doherty radio-frequency power amplifier 100.
Referring to fig. 2-3, fig. 2 is a schematic diagram of an application circuit structure of the Doherty rf power amplifier 100 of the utility model; fig. 3 is a schematic diagram of an application circuit structure of the Doherty rf power amplifier 100 according to an embodiment of the present invention.
The Doherty rf power amplifier 100 of the utility model comprises a driver amplifier 1, a carrier input matching network 2, a carrier power amplifier 3, a peak input matching network 4, a peak power amplifier 5, a first output matching network 6 and a second output matching network 7.
The driver amplifier 1 is used for amplifying an external input signal.
The carrier input matching network 2 is used to achieve a 90 degree phase shift and input impedance matching.
The carrier power amplifier 3 is used for realizing power amplification of signals.
The peak input matching network 4 is used for input impedance matching.
The peak power amplifier 5 is used for realizing power amplification of signals.
The first output matching network 6 is used to achieve a 90 degree phase shift and output impedance matching.
The second output matching network 7 is used for output impedance matching.
The specific circuit structure of the Doherty rf power amplifier 100 of the present invention is as follows:
the input terminal of the driver amplifier 1 serves as the input terminal RFin of the Doherty rf power amplifier 100.
The output end of the driving amplifier 1 is respectively connected with the input end of the carrier input matching network 2 and the input end of the peak input matching network 4.
The output of the carrier input matching network 2 is connected to the input of the carrier power amplifier 3.
The output of the carrier power amplifier 3 is connected to the input of the first output matching network 6.
The output of the peak input matching network 4 is connected to the input of the peak power amplifier 5.
The output terminal of the peak power amplifier 5 is connected to the input terminal of the second output matching network 7 and the output terminal of the first output matching network 6, respectively.
The output terminal of the second output matching network 7 is used as the output terminal RFout of the Doherty rf power amplifier 100 for connecting the system load R.
The structure is characterized in that a carrier input matching network 2 is arranged in front of the input end of a carrier power amplifier 3, and a peak input matching network 4 is arranged in front of the input end of a peak power amplifier 5. The arrangement enables uniform or non-uniform power distribution of the input power to be realized through the impedance value of the carrier input matching network 2 and the impedance value of the peak input matching network 4, so that a power divider with a larger size in the related art can be replaced, and the layout area of the Doherty radio-frequency power amplifier 100 is small and is easy to integrate on a chip of a GaAs HBT process.
Wherein the carrier input matching network 2 and the first output matching network 6 each comprise a phase compensation network for 90 degree phase shift and impedance transformation. The structure enables the first output matching network to simultaneously play the role of a quarter-wavelength impedance transformation line, and 90-degree phase shift is realized. Meanwhile, the carrier input matching network comprises a phase compensation network so as to ensure that the combined power of the carrier power amplifier and the peak power amplifier is maximum when the output power is high. Therefore, the power addition efficiency of the Doherty radio-frequency power amplifier is high. In addition, the circuit replaces a quarter-wavelength impedance transformation line in the related art, so that the layout area of the Doherty radio-frequency power amplifier 100 is small, and the Doherty radio-frequency power amplifier is easy to integrate on a chip of a GaAs HBT process.
In this embodiment, the phase compensation network is any one of a high-pass T-type network, a high-pass pi-type network, a low-pass T-type network, and a low-pass pi-type network.
And the high-pass T-type network and the search high-pass pi-type network realize + 90-degree phase shift. The low-pass T-type network and the low-pass pi-type network realize a-90-degree phase shift.
Referring to fig. 4, fig. 4 is a circuit diagram of a high-pass T-type network of the Doherty rf power amplifier of the present invention.
The high-pass T-type network comprises a capacitor CA1, a capacitor CA2 and an inductor LA. The capacitor CA1 and the capacitor CA2 are serially connected in sequence from the input end of the high-pass T-shaped network to the output end of the high-pass T-shaped network, and the inductor LA is connected between the end point between the capacitor CA1 and the capacitor CA2 and the ground in a bridging mode.
Referring to fig. 5, fig. 5 is a circuit diagram of a low-pass T-type network of the Doherty rf power amplifier of the present invention.
The low-pass T-shaped network comprises an inductor LB1, an inductor LB2 and a capacitor CB. The inductor LB1 and the inductor LB2 are serially connected from the input end of the low-pass T-shaped network to the output end of the low-pass T-shaped network in sequence, and the capacitor CB is connected between the end point between the inductor LB1 and the inductor LB2 in a bridge mode and the ground.
Referring to fig. 6, fig. 6 is a circuit diagram of a high-pass pi-type network of the Doherty rf power amplifier of the present invention.
The high-pass pi-shaped network comprises an inductor LC1, an inductor LC2 and a capacitor CC. The capacitor CC is arranged between the input end of the high-pass pi-shaped network and the output end of the high-pass pi-shaped network, the inductor LC1 is bridged between the input end of the high-pass pi-shaped network and the ground, and the inductor LC2 is bridged between the output end of the high-pass pi-shaped network and the ground.
Referring to fig. 7, fig. 7 is a circuit diagram of a low-pass pi-type network of the Doherty rf power amplifier of the present invention.
The low-pass pi-shaped network comprises an inductor LD, a capacitor CD1 and a capacitor CD 2. The inductor LD is arranged between the input end of the low-pass pi-shaped network and the output end of the low-pass pi-shaped network, the capacitor CD1 is bridged between the input end of the low-pass pi-shaped network and the ground, and the capacitor CD2 is bridged between the output end of the low-pass pi-shaped network and the ground.
In practical application, the type of the matching network is selected according to the input/output impedance characteristics of the carrier power amplifier 3 and the peak power amplifier 5. The carrier input matching network 2 is a high-pass T-type network or a high-pass pi-type network. The first output matching network 6 is a low-pass T-type network or a low-pass pi-type network. In the first embodiment, the carrier input matching network 2 is a high-pass T-type network, so as to facilitate suppression of low-frequency clutter signal interference. The first output matching network 6 is a low-pass pi-type network, and suppresses higher harmonics.
In this embodiment, the carrier input matching network 2, the peak input matching network 4, the first output matching network 6, and the second output matching network 7 are all lumped parameter circuits. The lumped parameter circuit is divided into standard circuit according to the size of electric device and the wavelength of working signal, and the actual circuit can be divided into distributed parameter circuit and lumped parameter circuit. Circuits that satisfy the d < < lambda condition are called lumped parameter circuits. The voltage between any two terminals in the circuit and the current flowing into any device port are completely determined, and the voltage and the current are independent of the geometric size and the spatial position of the device. Circuits that do not satisfy the d < < lambda condition are called distributed parameter circuits. It is characterized in that the voltage and current in the circuit are functions of time and are related to the geometrical size and spatial position of the device. Lumped parameter circuits are used to facilitate implementation using MMIC processes. Therefore, the Doherty radio-frequency power amplifier 100 of the utility model is easy to integrate on a chip of a GaAs HBT process.
(second embodiment)
The second embodiment provides a Doherty rf power amplifier 200. Referring to fig. 8, fig. 8 is a schematic diagram illustrating an application circuit structure of another embodiment of the Doherty rf power amplifier according to the embodiment of the utility model.
The Doherty rf power amplifier 200 provides a specific circuit on the circuit integration of the Doherty rf power amplifier 100. Therefore, the Doherty rf power amplifier 200 is a specific technical scheme with high power addition efficiency under a layout area. In the second embodiment, the driving amplifier 1, the carrier power amplifier 3, and the peak power amplifier 5 are all implemented by transistors.
The specific circuit structure of the Doherty rf power amplifier 101 is as follows:
the driving amplifier 1 includes a first inductor L1, a second inductor L2, a first capacitor C1, a first transistor Q1, and a first bias circuit M1. The first end of the first capacitor C1 is used as the input end of the driver amplifier 1, and the first end of the first capacitor C1 is connected to the ground GND by serially connecting the first inductor L1. A second terminal of the first capacitor C1 is connected to the base of the first transistor Q1 and the output terminal of the first bias circuit M1, respectively. The emitter of the first transistor Q1 is connected to ground GND. The collector of the first transistor Q1 is used as the output terminal of the driver amplifier 1, and the collector of the first transistor Q1 is connected to the second terminal of the second inductor L2, the input terminal of the carrier input matching network 2 and the input terminal of the peak input matching network 4, respectively. A first terminal of the second inductor L2 is connected to a power supply voltage Vcc. The input terminal of the first bias circuit M1 is connected to a reference voltage Vreg.
The carrier input matching network 2 includes a third inductor L3, a second capacitor C2, and a third capacitor C3. A first terminal of the second capacitor C2 serves as an input terminal of the carrier input matching network 2, and a first terminal of the second capacitor C2 is connected to the collector of the first transistor Q1. The second end of the second capacitor C2 is connected to the first end of the third capacitor C3 and the first end of the third inductor L3, respectively. The second end of the third inductor L3 is connected to ground GND. The second end of the third capacitor C3 is used as the output end of the carrier input matching network 2.
The carrier power amplifier 3 includes a second bias circuit M2 and a second transistor Q2. The base of the second transistor Q2 is used as the input terminal of the carrier power amplifier 3, and the base of the second transistor Q2 is connected to the second terminal of the third capacitor C3 and the output terminal of the second bias circuit M2, respectively. The emitter of the second transistor Q2 is connected to ground GND. The collector of the second transistor Q2 serves as the output of the carrier power amplifier 3. The input of the second bias circuit M2 is connected to a reference voltage Vreg.
The peak input matching network 4 comprises a fourth capacitance C4. A first terminal of the fourth capacitor C4 serves as an input terminal of the peak input matching network 4, and a first terminal of the fourth capacitor C4 is connected to the collector of the first transistor Q1. The second end of the fourth capacitor C4 is used as the output end of the peak input matching network 4.
The peak power amplifier 5 includes a third bias circuit M3 and a third transistor Q3. The base of the third transistor Q3 is used as the input terminal of the peak power amplifier 5, and the base of the third transistor Q3 is connected to the second terminal of the fourth capacitor C4 and the output terminal of the third bias circuit M3. The emitter of the third transistor Q3 is connected to ground GND. The collector of the third transistor Q3 serves as the output of the peak power amplifier 5. The input of the third bias circuit M3 is connected to a reference voltage Vreg.
The first output matching network 6 includes a fifth capacitor C5, a sixth capacitor C6, and a fourth inductor L4. A first terminal of the fourth inductor L4 is used as an input terminal of the first output matching network 6, and a first terminal of the fourth inductor L4 is respectively connected to a collector of the second transistor Q2 and a first terminal of the fifth capacitor C5. The second terminal of the fourth inductor L4 is used as the output terminal of the peak power amplifier 5, and the second terminal of the fourth inductor L4 is connected to the first terminal of the sixth capacitor C6. The second terminal of the fifth capacitor C5 is connected to ground GND. A second terminal of the sixth capacitor C6 is connected to ground GND.
The second output matching network 7 includes a fifth inductor L5, a sixth inductor L6, a seventh inductor L7, a seventh capacitor C7, and an eighth capacitor C8. A first terminal of the fifth inductor L5 is used as an input terminal of the second output matching network 7, and a first terminal of the fifth inductor L5 is respectively connected to the collector of the third transistor Q3 and the second terminal of the sixth inductor L6. A first terminal of the sixth inductor L6 is connected to the power supply voltage Vcc. A second terminal of the fifth inductor L5 is connected to the first terminal of the seventh capacitor C7 and the first terminal of the eighth capacitor C8, respectively. A second terminal of the seventh capacitor C7 is connected to ground GND. A second terminal of the eighth capacitor C8 is used as an output terminal of the second output matching network 7, and a second terminal of the eighth capacitor C8 is connected to the first terminal of the seventh inductor L7. A second end of the seventh inductor L7 is connected to ground GND.
The circuit structure described above shows: the carrier input matching network 2 and the first output matching network 6 each include a phase compensation network for 90 degree phase shift and impedance transformation. The structure enables the first output matching network to simultaneously play the role of a quarter-wavelength impedance transformation line, and 90-degree phase shift is realized. Meanwhile, the carrier input matching network comprises a phase compensation network so as to ensure that the combined power of the carrier power amplifier and the peak power amplifier is maximum when the output power is high. Therefore, the power addition efficiency of the Doherty radio-frequency power amplifier is high. In addition, the circuit replaces a quarter-wavelength impedance transformation line in the related art, so that the layout area of the Doherty radio-frequency power amplifier 100 is small, and the Doherty radio-frequency power amplifier is easy to integrate on a chip of a GaAs HBT process.
Referring to fig. 9, fig. 9 is a schematic diagram illustrating a comparison of the amplitude gain curves of the Doherty rf power amplifier provided by the embodiment of the utility model and a Class AB rf power amplifier of the related art.
The following can be obtained: at a power back-off of 8dB, the efficiency of the Doherty rf power amplifier 200 is improved by 18% compared to the Class AB rf power amplifier of the related art.
Therefore, the Doherty rf power amplifier 200 has fewer circuit components and high circuit performance, and is easy to integrate on a chip of a GaAs HBT process.
Compared with the prior art, the Doherty radio-frequency power amplifier removes a power divider with larger size in the prior art, the carrier input matching network is arranged in front of the input end of the carrier power amplifier, and the peak input matching network is arranged in front of the input end of the peak power amplifier. The setting enables uniform or non-uniform power distribution of input power to be achieved through the impedance value of the carrier input matching network and the impedance value of the peak input matching network, and therefore the power divider with a large size can be replaced. The output of the carrier power amplifier is connected to the input of a first output matching network, which each include a phase compensation network for 90 degree phase shift and impedance transformation. The structure enables the first output matching network to simultaneously play the role of a quarter-wavelength impedance transformation line, and 90-degree phase shift is realized. Meanwhile, the carrier input matching network comprises a phase compensation network to ensure that the combined power of the carrier power amplifier and the peak power amplifier is the maximum when the output power is high, so that the power additional efficiency of the Doherty radio-frequency power amplifier is high. In addition, the circuit replaces a quarter-wavelength impedance transformation line in the related art, so that the layout area of the Doherty radio-frequency power amplifier is small.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (10)
1. A Doherty radio-frequency power amplifier is characterized by comprising a driving amplifier, a carrier input matching network, a carrier power amplifier, a peak input matching network, a peak power amplifier, a first output matching network and a second output matching network;
the input end of the drive amplifier is used as the input end of the Doherty radio frequency power amplifier;
the output end of the drive amplifier is respectively connected with the input end of the carrier input matching network and the input end of the peak input matching network;
the output end of the carrier input matching network is connected to the input end of the carrier power amplifier;
the output end of the carrier power amplifier is connected to the input end of the first output matching network;
the output end of the peak input matching network is connected to the input end of the peak power amplifier;
the output end of the peak power amplifier is respectively connected to the input end of the second output matching network and the output end of the first output matching network;
an output end of the second output matching network is used as an output end of the Doherty radio-frequency power amplifier and is used for connecting a system load;
wherein the carrier input matching network and the first output matching network each include a phase compensation network for 90 degree phase shift and impedance transformation;
the phase compensation network is any one of a high-pass T-type network, a high-pass pi-type network, a low-pass T-type network and a low-pass pi-type network.
2. The Doherty radio-frequency power amplifier of claim 1 wherein the carrier-input matching network is a high-pass T-network or a high-pass pi-network; the first output matching network is a low-pass T-type network or a low-pass pi-type network.
3. The Doherty radio frequency power amplifier of claim 2 wherein the carrier input matching network is a high pass T network; the first output matching network is a low-pass pi-type network.
4. The Doherty RF power amplifier of claim 3 wherein the driver amplifier, the carrier power amplifier and the peaking power amplifier are all implemented with transistors.
5. The Doherty radio frequency power amplifier of claim 4, characterized in that,
the carrier input matching network comprises a third inductor, a second capacitor and a third capacitor; the first end of the second capacitor is used as the input end of the carrier input matching network, and the first end of the second capacitor is connected to the output end of the driving amplifier; the second end of the second capacitor is connected to the first end of the third capacitor and the first end of the third inductor respectively; the second end of the third inductor is connected to the ground; a second end of the third capacitor is used as an output end of the carrier input matching network;
the first output matching network comprises a fifth capacitor, a sixth capacitor and a fourth inductor; a first end of the fourth inductor is used as an input end of the first output matching network, and the first end of the fourth inductor is respectively connected to an output end of the carrier power amplifier and a first end of the fifth capacitor; a second end of the fourth inductor is used as an output end of the peak power amplifier, and the second end of the fourth inductor is connected to a first end of the sixth capacitor; a second end of the fifth capacitor is connected to ground; the second end of the sixth capacitor is connected to ground.
6. The Doherty radio frequency power amplifier of claim 5 wherein the driver amplifier comprises a first inductor, a second inductor, a first capacitor, a first transistor and a first bias circuit; a first end of the first capacitor is used as an input end of the driving amplifier, the first end of the first capacitor is connected to the ground after being connected with the first inductor in series, a second end of the first capacitor is respectively connected to a base of the first transistor and an output end of the first bias circuit, an emitter of the first transistor is connected to the ground, a collector of the first transistor is used as an output end of the driving amplifier, and a collector of the first transistor is respectively connected to a second end of the second inductor, an input end of the carrier input matching network and an input end of the peak input matching network; the first end of the second inductor is connected to a power supply voltage; the input end of the first bias circuit is connected to a reference voltage.
7. The Doherty radio frequency power amplifier of claim 5 wherein the carrier power amplifier includes a second bias circuit and a second transistor; the base electrode of the second transistor is used as the input end of the carrier power amplifier, and the base electrodes of the second transistor are respectively connected to the second end of the third capacitor and the output end of the second bias circuit; an emitter of the second transistor is connected to ground; a collector of the second transistor is used as an output end of the carrier power amplifier; the input end of the second bias circuit is connected to a reference voltage.
8. The Doherty radio frequency power amplifier of claim 6 wherein the peak input matching network includes a fourth capacitance; a first end of the fourth capacitor is used as an input end of the peak input matching network, and the first end of the fourth capacitor is connected to a collector electrode of the first transistor; a second end of the fourth capacitor is used as an output end of the peak value input matching network;
the peak power amplifier comprises a third bias circuit and a third transistor; the base electrode of the third transistor is used as the input end of the peak power amplifier, and the base electrode of the third transistor is connected to the second end of the fourth capacitor and the output end of the third bias circuit; an emitter of the third transistor is connected to ground; the collector of the third transistor is used as the output end of the peak power amplifier; the input terminal of the third bias circuit is connected to a reference voltage.
9. The Doherty radio frequency power amplifier of claim 8 wherein the second output matching network comprises a fifth inductor, a sixth inductor, a seventh capacitor and an eighth capacitor; a first end of the fifth inductor is used as an input end of the second output matching network, and the first end of the fifth inductor is respectively connected to a collector electrode of the third transistor and a second end of the sixth inductor; a first end of the sixth inductor is connected to a power supply voltage; a second end of the fifth inductor is connected to a first end of the seventh capacitor and a first end of the eighth capacitor respectively; a second end of the seventh capacitor is connected to ground; a second end of the eighth capacitor is used as an output end of the second output matching network, and the second end of the eighth capacitor is connected to the first end of the seventh inductor; a second terminal of the seventh inductor is connected to ground.
10. The Doherty radio-frequency power amplifier of claim 1 wherein the carrier-input matching network, the peaking-input matching network, the first output matching network and the second output matching network are lumped parameter circuits.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122705452.8U CN216390917U (en) | 2021-11-05 | 2021-11-05 | Doherty radio frequency power amplifier |
| PCT/CN2022/125438 WO2023078062A1 (en) | 2021-11-05 | 2022-10-14 | Doherty radio frequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122705452.8U CN216390917U (en) | 2021-11-05 | 2021-11-05 | Doherty radio frequency power amplifier |
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| CN216390917U true CN216390917U (en) | 2022-04-26 |
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| CN202122705452.8U Active CN216390917U (en) | 2021-11-05 | 2021-11-05 | Doherty radio frequency power amplifier |
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| WO (1) | WO2023078062A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115955203A (en) * | 2022-12-30 | 2023-04-11 | 尚睿微电子（上海）有限公司 | Power amplifying circuit |
| WO2023078062A1 (en) * | 2021-11-05 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Doherty radio frequency power amplifier |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10340855B2 (en) * | 2016-01-05 | 2019-07-02 | Mitsubishi Electric Corporation | Doherty amplifier |
| JP6834094B2 (en) * | 2016-10-25 | 2021-02-24 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Doherty amplifier |
| EP3700087B1 (en) * | 2017-11-15 | 2021-12-22 | Mitsubishi Electric Corporation | Doherty amplifier and doherty amplifier circuit |
| JPWO2020208813A1 (en) * | 2019-04-12 | 2021-04-30 | 三菱電機株式会社 | Doherty amplifier circuit |
| CN111510076B (en) * | 2020-05-18 | 2023-08-18 | 优镓科技(北京)有限公司 | class-AB driven Doherty power amplifier, base station and mobile terminal |
| CN216390917U (en) * | 2021-11-05 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Doherty radio frequency power amplifier |
-
2021
- 2021-11-05 CN CN202122705452.8U patent/CN216390917U/en active Active
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- 2022-10-14 WO PCT/CN2022/125438 patent/WO2023078062A1/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023078062A1 (en) * | 2021-11-05 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Doherty radio frequency power amplifier |
| CN115955203A (en) * | 2022-12-30 | 2023-04-11 | 尚睿微电子（上海）有限公司 | Power amplifying circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023078062A1 (en) | 2023-05-11 |
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