CN216390920U - Doherty radio frequency power amplifier - Google Patents
Doherty radio frequency power amplifier Download PDFInfo
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- CN216390920U CN216390920U CN202122710035.2U CN202122710035U CN216390920U CN 216390920 U CN216390920 U CN 216390920U CN 202122710035 U CN202122710035 U CN 202122710035U CN 216390920 U CN216390920 U CN 216390920U
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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Abstract
The embodiment of the utility model provides a Doherty radio-frequency power amplifier which comprises a driving amplifier, a carrier input matching network, a carrier bias circuit, a carrier power amplifier, a peak input matching network, a peak bias circuit, a peak power amplifier, a first output matching network, a second output matching network, a power detection circuit and a peak bias control circuit, wherein the carrier input matching network is connected with the carrier bias circuit; the driving amplifier is used for amplifying an input radio frequency signal; the power detection circuit is used for detecting the radio frequency signal to generate a detection result, judging the output power state of the Doherty radio frequency power amplifier according to the detection result and generating a corresponding control signal according to the output power state; the peak bias control circuit is used for generating a peak bias control voltage corresponding to the control signal according to the control signal. The Doherty radio-frequency power amplifier has the advantages of small layout area, good linearity and high power addition efficiency.
Description
Technical Field
The utility model relates to the technical field of radio frequency integrated circuits, in particular to a Doherty radio frequency power amplifier.
Background
In order to meet the requirement of high data communication rate, the 5G wireless communication technology adopts a high-order Quadrature Amplitude Modulation (QAM) technology, and a modulated signal has a very high peak-to-average power ratio (PAPR). High peak-to-average ratio signals place stringent requirements on the linearity of the radio frequency power amplifier. In order to ensure undistorted transmission of signals, wireless communication systems require that the rf power amplifier operate in a power back-off state away from the power compression point to ensure linear amplification of the rf signal. However, the efficiency of the rf power amplifier is usually designed to be the highest near the saturation region, and the efficiency of the power back-off point is significantly reduced. In order to improve the efficiency of the rf power amplifier in power back-off, the Doherty structure is a common method for designing the rf power amplifier.
A prior art Doherty rf power amplifier generally includes a power divider, a main input matching network, a main power amplifier, a main output matching network, a main phase compensation network, a quarter-wavelength transmission line, a front auxiliary phase compensation network, an auxiliary input matching network, an auxiliary power amplifier, an auxiliary output matching network, a rear auxiliary phase compensation network, and an output matching network. Wherein the output matching network is connected to an external system load. Referring to fig. 1, fig. 1 is a schematic circuit application diagram of a Doherty rf power amplifier in the related art. The Doherty technology is used as an efficiency enhancement technology, and the main principle is that the carrier power amplifier enters a saturation state in advance through the active load traction action of an impedance transformation network at the output end of the power amplifier, so that the efficiency of the power of the Doherty radio-frequency power amplifier in a back-off region is improved. Active LoadPull technology (Active LoadPull technology) is the key to implementing a Doherty rf power amplifier. Another related art Doherty rf power amplifier includes a driver amplifier, a power splitter, a main power amplifier, an auxiliary power amplifier, a power combiner, and a quarter-wavelength transmission line. Referring to fig. 2, fig. 2 is a schematic diagram illustrating another circuit structure of a Doherty rf power amplifier in the related art. After the input signal is amplified by the drive amplifier, the input power is divided into two parts by the power divider, one part is input to the input end of the main power amplifier, and the other part is connected to the input end of the auxiliary power amplifier after passing through the quarter-wavelength transmission line. The output end of the main power amplifier is connected to the first input end of the power synthesizer through a quarter-wavelength transmission line, the output end of the auxiliary power amplifier is directly connected to the second input end of the power synthesizer, and the output end of the power synthesizer is connected to the output load. The operating principle of the Doherty rf power amplifier in the related art is as follows: the main power amplifier is biased in Class AB or Class B, and the auxiliary power amplifier is biased in Class C. In a low output power state, the auxiliary power amplifier is in a closed state, and the load impedance of the main power amplifier is 2 Ropt. Under the high output power state, the auxiliary power amplifier is opened, the load impedance of the main power amplifier is changed from 2Ropt to Ropt along with the increase of the input power, the load impedance of the auxiliary power amplifier is gradually reduced from an infinite value to Ropt along with the increase of the input power, and the output of the two amplifiers is subjected to power synthesis by the power synthesizer. Due to this load modulation variation, the Doherty rf power amplifier exhibits a high efficiency at power back-off.
However, the power divider and the quarter-wavelength transmission line of the Doherty rf power amplifier in the related art are too large in size to be implemented on a chip, and especially in the Sub-6GHz band, the lower the frequency is, the longer the quarter-wavelength transmission line is. The small size of monolithic microwave integrated circuits requires the use of small-sized passive devices in the design of Doherty rf power amplifiers using integrated circuit technology. The related art Doherty rf power amplifier can operate only in a narrow frequency band. Meanwhile, the auxiliary power amplifier in the Doherty rf power amplifier is usually operated in a class C mode to ensure that the auxiliary power amplifier is not turned on in a low input power state. The class C rf power amplifier usually has a low power gain and very low efficiency at start-up, and the linearity of the output power is lower than that of the class AB power amplifier, which all seriously affect the overall performance of the Doherty rf power amplifier.
Therefore, there is a need to provide a novel wideband Doherty rf power amplifier with compact size and capable of being implemented by integrated circuit technology to solve the above problems.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the prior art, the utility model provides the Doherty radio-frequency power amplifier which is small in layout area, good in linearity and high in power addition efficiency.
In order to solve the above technical problem, an embodiment of the present invention provides a Doherty rf power amplifier, where the Doherty rf power amplifier includes a driver amplifier, a carrier input matching network, a carrier bias circuit, a carrier power amplifier, a peak input matching network, a peak bias circuit, a peak power amplifier, a first output matching network, a second output matching network, a power detection circuit, and a peak bias control circuit;
the driving amplifier is used for amplifying an input radio frequency signal;
the carrier input matching network is connected to the drive amplifier and is used for performing 90-degree phase shift and impedance matching on the output end of the drive amplifier;
the carrier bias circuit is connected to the carrier power amplifier and used for providing a carrier bias voltage for the carrier power amplifier;
the carrier power amplifier is connected to the carrier input matching network and used for performing power amplification on a signal output by the carrier input matching network;
the power detection circuit is used for detecting the radio frequency signal and generating a detection result, judging the output power state of the Doherty radio frequency power amplifier according to the detection result and generating a corresponding control signal according to the output power state;
the peak bias control circuit is connected to the power detection circuit and used for generating a peak bias control voltage corresponding to the control signal according to the control signal;
the peak input matching network is connected to the drive amplifier and is used for carrying out impedance matching on the output end of the drive amplifier;
the peak bias circuit is connected between the peak bias control circuit and the peak power amplifier and used for generating a peak bias voltage corresponding to the peak bias control voltage according to the peak bias control voltage and providing the peak bias voltage for the peak power amplifier;
the peak power amplifier is connected to the peak input matching network and is used for performing power amplification on a signal output by the peak input matching network;
the first output matching network is connected to the carrier power amplifier and is used for performing 90-degree phase shift and impedance matching on an output signal of the carrier power amplifier;
the second output matching network is respectively connected to the peak power amplifier and the first output matching network, and is used for performing impedance matching on an output signal of the peak power amplifier, synthesizing a signal output by the peak power amplifier and a signal output by the first output matching network into one path of output, and connecting a system load.
Preferably, the input end of the driver amplifier is used as the input end of the Doherty radio-frequency power amplifier;
the output end of the drive amplifier is respectively connected with the input end of the carrier input matching network, the input end of the peak input matching network and the input end of the power detection circuit;
the output end of the power detection circuit is connected to the input end of the peak bias control circuit, and the output end of the peak bias control circuit is connected to the input end of the peak bias circuit;
the output end of the carrier input matching network is respectively connected to the input end of the carrier power amplifier and the output end of the carrier bias circuit, and the input end of the carrier bias circuit is used for connecting carrier bias voltage;
the output end of the carrier power amplifier is connected to the input end of the first output matching network;
the output end of the first output matching network is connected to the first input end of the second output matching network;
the output end of the peak input matching network is respectively connected to the input end of the peak power amplifier and the output end of the peak bias circuit;
the output end of the peak power amplifier is connected to the second input end of the second output matching network;
and the output end of the second output matching network is used as the output end of the Doherty radio frequency power amplifier.
Preferably, the carrier input matching network is a high-pass T-type network for 90-degree phase shift and impedance transformation; the first output matching network is a low-pass pi-type network used for 90-degree phase shift and impedance transformation.
Preferably, the carrier input matching network includes a second inductor, a second capacitor, and a third capacitor; the first end of the second capacitor is used as the input end of the carrier input matching network, and the first end of the second capacitor is connected to the output end of the driving amplifier; the second end of the second capacitor is connected to the first end of the third capacitor and the first end of the second inductor respectively; the second end of the second inductor is connected to the ground; a second end of the third capacitor is used as an output end of the carrier input matching network;
the first output matching network comprises a fourth capacitor, a fifth capacitor and a third inductor; a first end of the third inductor is used as an input end of the first output matching network, and the first end of the third inductor is respectively connected to an output end of the carrier power amplifier and a first end of the fourth capacitor; a second end of the third inductor is used as an output end of the peak power amplifier, and the second end of the third inductor is connected to a first end of the fifth capacitor; the second end of the fourth capacitor and the second end of the fifth capacitor are both connected to ground.
Preferably, the second output matching network comprises a high-pass T-network for 90-degree phase shift and impedance transformation.
Preferably, the second output matching network includes a fourth inductor, a fifth inductor, a sixth inductor, a seventh inductor, a sixth capacitor, and a seventh capacitor;
a first end of the fourth inductor is used as a second input end of the second output matching network, and the first end of the fourth inductor is connected to the output end of the peak power amplifier;
a second end of the fourth inductor is used as a second input end of the second output matching network, the second end of the fourth inductor is respectively connected to a second end of the fifth inductor and a first end of the sixth inductor, and the first end of the fifth inductor is connected to a power supply voltage;
a second end of the sixth inductor is connected to the first end of the sixth capacitor and the first end of the seventh inductor respectively, and a second end of the sixth capacitor is connected to the ground;
a second end of the seventh inductor is connected to a first end of the seventh capacitor, and a second end of the seventh capacitor serves as an output end of the second output matching network.
Preferably, the peak input matching network comprises a first capacitance; the first end of the first capacitor is used as the input end of the peak value input matching network, and the first end of the first capacitor is connected to the output end of the driving amplifier; and the second end of the first capacitor is used as the output end of the peak value input matching network.
Preferably, the Doherty rf power amplifier further comprises a first inductor, and a power supply input end of the driver amplifier is connected to a power supply voltage by being connected in series with the first inductor.
Preferably, the Doherty rf power amplifier further comprises a power coupler, and the power coupler is configured to couple an input rf signal and output the coupled signal to the power detection circuit;
the input end of the power coupler is used as the input end of the Doherty radio-frequency power amplifier, the first output end of the power coupler is connected to the input end of the driving amplifier, and the second output end of the power coupler is connected to the input end of the power detection circuit;
the output end of the power detection circuit is connected to the input end of the peak bias control circuit, and the output end of the peak bias control circuit is connected to the input end of the peak bias circuit;
the output end of the drive amplifier is respectively connected with the input end of the carrier input matching network and the input end of the peak input matching network;
the output end of the carrier input matching network is respectively connected to the input end of the carrier power amplifier and the output end of the carrier bias circuit, and the input end of the carrier bias circuit is used for connecting carrier bias voltage;
the output end of the carrier power amplifier is connected to the input end of the first output matching network;
the output end of the first output matching network is connected to the first input end of the second output matching network;
the output end of the peak input matching network is respectively connected to the input end of the peak power amplifier and the output end of the peak bias circuit;
the output end of the peak power amplifier is connected to the second input end of the second output matching network;
and the output end of the second output matching network is used as the output end of the Doherty radio frequency power amplifier.
Preferably, the carrier input matching network, the peak input matching network, the first output matching network, and the second output matching network are lumped parameter circuits.
Compared with the prior art, the Doherty radio-frequency power amplifier removes a power divider with larger size in the prior art, the carrier input matching network is arranged in front of the input end of the carrier power amplifier, and the peak input matching network is arranged in front of the input end of the peak power amplifier. The setting enables uniform or non-uniform power distribution of input power to be achieved through the impedance value of the carrier input matching network and the impedance value of the peak input matching network, and therefore the power divider with a large size can be replaced. The output end of the carrier power amplifier is connected to the input end of a first output matching network, and the carrier input matching network and the first output matching network are both phase compensation networks with 90-degree phase shift and impedance matching. The structure enables the first output matching network to simultaneously play the role of a quarter-wavelength impedance transformation line, and 90-degree phase shift is realized. Meanwhile, the carrier input matching network comprises a phase compensation network to ensure that the combined power of the carrier power amplifier and the peak power amplifier is the maximum when the output power is high, so that the power additional efficiency of the Doherty radio-frequency power amplifier is high. In addition, the circuit replaces a quarter-wavelength impedance transformation line in the related art, so that the layout area of the Doherty radio-frequency power amplifier is small. The Doherty radio-frequency power amplifier detects the radio-frequency signal through the power detection circuit to generate a detection result, judges the output power state of the Doherty radio-frequency power amplifier according to the detection result and generates a corresponding control signal according to the output power state; and generating a peak bias control voltage corresponding to the control signal according to the control signal through the peak bias control circuit, and controlling the opening or closing of the peak power amplifier through the peak bias control voltage, so that the peak power amplifier also biases class AB, the power gain and the linearity are the same as those of a carrier power amplifier, the output power of the two paths of synthesized output power is doubled, and good linearity is ensured.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the utility model will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings, there is shown in the drawings,
fig. 1 is a schematic diagram of a circuit application of a Doherty rf power amplifier in the related art;
fig. 2 is a schematic diagram of another circuit structure of a Doherty rf power amplifier in the related art;
fig. 3 is a schematic circuit diagram of a Doherty rf power amplifier of the present invention;
fig. 4 is a schematic diagram of another circuit structure of the Doherty rf power amplifier of the utility model.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the utility model. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
(embodiment one)
The embodiment of the utility model provides a Doherty radio-frequency power amplifier 100.
Referring to fig. 3, fig. 3 is a circuit diagram of a Doherty rf power amplifier 100 according to an embodiment of the utility model.
The Doherty rf power amplifier 100 of the utility model includes a driver amplifier 1, a carrier input matching network 2, a carrier bias circuit 3, a carrier power amplifier 4, a peak input matching network 5, a peak bias circuit 6, a peak power amplifier 7, a first output matching network 8, a second output matching network 9, a power detection circuit 10, and a peak bias control circuit 11.
The driving amplifier 1 is used for amplifying an input radio frequency signal.
The carrier input matching network 2 is connected to the driver amplifier 1. The carrier input matching network 2 is used for performing 90-degree phase shift and impedance matching on the output end of the driving amplifier 1.
The carrier bias circuit 3 is connected to the carrier power amplifier 4. The carrier bias circuit 3 is configured to provide a carrier bias voltage to the carrier power amplifier 4.
The carrier power amplifier 4 is connected to the carrier input matching network 3. The carrier power amplifier 4 is configured to power amplify the signal output by the carrier input matching network 2.
The power detection circuit 10 is configured to detect the rf signal and generate a detection result, determine an output power state of the Doherty rf power amplifier 100 according to the detection result, and generate a corresponding control signal according to the output power state.
The peak bias control circuit 11 is connected to the power detection circuit 10. The peak bias control circuit 11 is configured to generate a peak bias control voltage corresponding to the control signal according to the control signal.
The peak input matching network 5 is connected to the driver amplifier 1. The peak input matching network 5 is used for impedance matching of the output terminal of the driver amplifier 1.
The peak bias circuit 6 is connected between the peak bias control circuit 11 and the peak power amplifier 7. The peak bias circuit 6 is configured to generate a peak bias voltage corresponding to the peak bias control voltage according to the peak bias control voltage, and to provide the peak bias voltage to the peak power amplifier 7.
The peak power amplifier 7 is connected to the peak input matching network 5. The peak power amplifier 7 is configured to power-amplify the signal output by the peak input matching network 5.
The first output matching network 8 is connected to the carrier power amplifier 7. The first output matching network 8 is used for performing 90-degree phase shift and impedance matching on the output signal of the carrier power amplifier 4.
The second output matching network 9 is connected to the peaking power amplifier 7 and the first output matching network 8, respectively. The second output matching network 9 is configured to perform impedance matching on the output signal of the peak power amplifier 7, combine the signal output by the peak power amplifier 7 and the signal output by the first output matching network 8 into one output, and further connect to a system load.
Among them, the connection relationship of the Doherty rf power amplifier 100 of the present invention is:
the input terminal of the driver amplifier 1 serves as the input terminal RFin of the Doherty rf power amplifier 100.
The output end of the driving amplifier 1 is connected to the input end of the carrier input matching network 2, the input end of the peak input matching network 5 and the input end of the power detection circuit 10, respectively.
The output terminal of the power detection circuit 10 is connected to the input terminal of the peak bias control circuit 11, and the output terminal of the peak bias control circuit 11 is connected to the input terminal of the peak bias circuit 6.
The output end of the carrier input matching network 2 is respectively connected to the input end of the carrier power amplifier 4 and the output end of the carrier bias circuit 3, and the input end of the carrier bias circuit 3 is used for connecting a carrier bias voltage Vreg.
The output of the carrier power amplifier 4 is connected to the input of the first output matching network 8.
The output of the first output matching network 8 is connected to a first input of the second output matching network 9.
The output terminal of the peak input matching network 5 is connected to the input terminal of the peak power amplifier 7 and the output terminal of the peak bias circuit 6, respectively.
The output of the peak power amplifier 7 is connected to a second input of the second output matching network 9.
The output terminal of the second output matching network 9 serves as the output terminal RFout of the Doherty rf power amplifier 100 for connecting to a system load R.
The structure is characterized in that a carrier input matching network 2 is arranged in front of the input end of a carrier power amplifier 4, and a peak input matching network 5 is arranged in front of the input end of a peak power amplifier 7. The arrangement enables uniform or non-uniform power distribution of input power to be realized through the impedance value of the carrier input matching network 2 and the impedance value of the peak input matching network 5, so that a power divider with a large size in the related art can be replaced, and the layout area of the Doherty radio-frequency power amplifier 100 is small and is easy to integrate on a chip of a GaAs HBT process.
Wherein the carrier input matching network 2 and the first output matching network 8 each comprise a phase compensation network for 90 degree phase shift and impedance transformation. The structure enables the first output matching network to simultaneously play the role of a quarter-wavelength impedance transformation line, and 90-degree phase shift is realized. Meanwhile, the carrier input matching network comprises a phase compensation network so as to ensure that the combined power of the carrier power amplifier 4 and the peak power amplifier 7 is maximum at high output power. Thereby enabling the power added efficiency of the Doherty rf power amplifier 100 of the present invention to be high. In addition, the circuit replaces a quarter-wavelength impedance transformation line in the related art, so that the layout area of the Doherty radio-frequency power amplifier 100 is small, and the Doherty radio-frequency power amplifier is easy to integrate on a chip of a GaAs HBT process.
In this embodiment, the phase compensation network is any one of a high-pass T-type network, a high-pass pi-type network, a low-pass T-type network, and a low-pass pi-type network.
And the high-pass T-type network and the search high-pass pi-type network realize + 90-degree phase shift. The low-pass T-type network and the low-pass pi-type network realize a-90-degree phase shift.
In practical application, the type of the matching network is selected according to the input/output impedance characteristics of the carrier power amplifier 4 and the peak power amplifier 7. The carrier input matching network 2 is a high-pass T-type network or a high-pass pi-type network. The first output matching network 8 is a low-pass T-type network or a low-pass pi-type network. In the first embodiment, the carrier input matching network 2 is a high-pass T-type network for 90-degree phase shift and impedance transformation, so as to facilitate suppression of low-frequency clutter signal interference. The first output matching network 8 is a low-pass pi-type network for 90-degree phase shift and impedance transformation, and suppresses higher harmonics.
In this embodiment, the carrier input matching network 2, the peak input matching network 5, the first output matching network 8, and the second output matching network 9 are all lumped parameter circuits. The lumped parameter circuit is divided into standard circuit according to the size of electric device and the wavelength of working signal, and the actual circuit can be divided into distributed parameter circuit and lumped parameter circuit. Circuits that satisfy the d < < lambda condition are called lumped parameter circuits. The voltage between any two terminals in the circuit and the current flowing into any device port are completely determined, and the voltage and the current are independent of the geometric size and the spatial position of the device. Circuits that do not satisfy the d < < lambda condition are called distributed parameter circuits. It is characterized in that the voltage and current in the circuit are functions of time and are related to the geometrical size and spatial position of the device. Lumped parameter circuits are used to facilitate implementation using MMIC processes. Therefore, the Doherty radio-frequency power amplifier 100 of the utility model is easy to integrate on a chip of a GaAs HBT process.
The specific circuit structure of the Doherty rf power amplifier 100 of the present invention is:
the Doherty rf power amplifier 100 further comprises a first inductor L1, and the power input terminal of the driver amplifier 1 is connected to the power supply voltage Vcc by being connected in series with the first inductor L1.
The carrier input matching network 2 includes a second inductor L2, a second capacitor C2, and a third capacitor C3. The first terminal of the second capacitor C2 is used as the input terminal of the carrier input matching network 2, and the first terminal of the second capacitor C2 is connected to the output terminal of the driver amplifier 1. The second end of the second capacitor C2 is connected to the first end of the third capacitor C3 and the first end of the second inductor L2, respectively. The second end of the second inductor L2 is connected to ground GND. The second end of the third capacitor C3 is used as the output end of the carrier input matching network 2. Wherein the carrier input matching network 2 implements a-90 degree phase shift.
The peak input matching network 5 comprises a first capacitance C1. The first terminal of the first capacitor C1 is used as the input terminal of the peak input matching network 5, and the first terminal of the first capacitor C1 is connected to the output terminal of the driver amplifier 1. The second end of the first capacitor C1 is used as the output end of the peak input matching network 5.
The first output matching network 8 includes a fourth capacitor C4, a fifth capacitor C5, and a third inductor L3. A first terminal of the third inductor L3 is used as an input terminal of the first output matching network 8, and a first terminal of the third inductor L3 is connected to the output terminal of the carrier power amplifier 4 and the first terminal of the fourth capacitor C4, respectively. The second terminal of the third inductor L3 is used as the output terminal of the peak power amplifier 7, and the second terminal of the third inductor L3 is connected to the first terminal of the fifth capacitor C5. The second terminal of the fourth capacitor C4 and the second terminal of the fifth capacitor C5 are both connected to ground GND. Wherein the first output matching network 8 implements a +90 degree phase shift.
The second output matching network 9 includes a fourth inductor L4, a fifth inductor 5, a sixth inductor L6, a seventh inductor L7, a sixth capacitor C6, and a seventh capacitor C7.
The first terminal of the fourth inductor L4 is used as the second input terminal of the second output matching network 9, and the first terminal of the fourth inductor L4 is connected to the output terminal of the peaking power amplifier 7.
A second end of the fourth inductor L4 is used as a second input end of the second output matching network 9, a second end of the fourth inductor L4 is respectively connected to a second end of the fifth inductor 5 and a first end of the sixth inductor L6, and the first end of the fifth inductor 5 is connected to a power supply voltage Vcc.
A second terminal of the sixth inductor L6 is respectively connected to the first terminal of the sixth capacitor C6 and the first terminal of the seventh inductor L7, and a second terminal of the sixth capacitor C6 is connected to the ground GND.
A second terminal of the seventh inductor L7 is connected to a first terminal of the seventh capacitor C7, and a second terminal of the seventh capacitor C7 serves as an output terminal of the second output matching network 9.
Wherein the second output matching network 9 comprises a high-pass T-network 91 for 90-degree phase shift and impedance transformation. The high-pass T-type network 91 is formed by the sixth inductor L6, the seventh inductor L7, and the sixth capacitor C6. The high-pass T-network 91 achieves a +90 degree phase shift.
The operating principle of the Doherty rf power amplifier 100 of the utility model is as follows:
both the carrier power amplifier 4 and the peak power amplifier 7 are biased in class AB. The turning on of the peak power amplifier 7 is controlled by the peak bias control circuit 11:
when the Doherty rf power amplifier 100 is in the high output power mode, the output power of the driver amplifier 1 is high, the power detection circuit 10 connected to the output end of the driver amplifier 1 detects the high output power state, the peak bias control circuit 11 outputs a high level, controls the peak bias circuit 6 of the peak power amplifier 7 to output a current or voltage signal, turns on the peak power amplifier 7, and then completes power synthesis with the carrier power amplifier 4.
When the Doherty rf power amplifier 100 is in the output low power mode, the output power of the driver amplifier 1 is low, the power detection circuit 10 connected to the output end of the driver amplifier 1 detects a low output power state, the peak bias control circuit 11 outputs a low level, controls the peak bias circuit 6 of the peak power amplifier 7 not to output a current or voltage signal, turns off the peak power amplifier 7, only the carrier power amplifier 4 works, and the maximum output power is P0/4 (the maximum power after the two power amplifiers are combined is P0).
Because the peak power amplifier 7 also biases class AB, the power gain and linearity of the peak power amplifier 7 are the same as those of the carrier power amplifier 4, and the output power of the Doherty rf power amplifier 100 is doubled by the combined two paths of output power, and the Doherty rf power amplifier 100 has good linearity.
(second embodiment)
The second embodiment provides a Doherty rf power amplifier 200. Referring to fig. 4, fig. 4 is a circuit structure diagram of another embodiment of a Doherty rf power amplifier according to the embodiment of the utility model.
The Doherty rf power amplifier 200 is substantially the same as the Doherty rf power amplifier 100, with two differences: the Doherty rf power amplifier 100 further comprises a power coupler 12, wherein the power coupler 12 is configured to couple an input rf signal and output the coupled signal to the power detection circuit 10.
The specific circuit connection relationship of the Doherty rf power amplifier 200 is as follows:
an input terminal of the power coupler 12 serves as an input terminal of the Doherty rf power amplifier 100, a first output terminal of the power coupler 12 is connected to the input terminal of the driver amplifier 1, and a second output terminal of the power coupler 12 is connected to the input terminal of the power detection circuit 10.
The output terminal of the power detection circuit 10 is connected to the input terminal of the peak bias control circuit 11, and the output terminal of the peak bias control circuit 11 is connected to the input terminal of the peak bias circuit 6.
The output end of the driving amplifier 1 is respectively connected with the input end of the carrier input matching network 2 and the input end of the peak input matching network 5.
The output end of the carrier input matching network 2 is respectively connected to the input end of the carrier power amplifier 4 and the output end of the carrier bias circuit 3, and the input end of the carrier bias circuit 3 is used for connecting carrier bias voltage.
The output of the carrier power amplifier 4 is connected to the input of the first output matching network 8.
The output of the first output matching network 8 is connected to a first input of the second output matching network 9.
The output terminal of the peak input matching network 5 is connected to the input terminal of the peak power amplifier 7 and the output terminal of the peak bias circuit 6, respectively.
The output of the peak power amplifier 7 is connected to a second input of the second output matching network 9.
The output terminal of the second output matching network 9 serves as the output terminal of the Doherty rf power amplifier 100.
The operation principle of the Doherty rf power amplifier 200 and the Doherty rf power amplifier 100 is as follows: the power coupler 12 detects the power level of the corresponding transmission power in the received rf signal through the power coupler before the driver amplifier, and determines whether the Doherty rf power amplifier 100 is in the low output power mode or the high power mode, thereby determining whether to turn on the peak power amplifier 7.
In addition, the Doherty rf power amplifier 200 has fewer circuit components and high circuit performance, and is easy to integrate on a chip of a GaAs HBT process.
It should be noted that the related circuits, resistors, capacitors, inductors, and power amplifiers used in the present invention are all commonly used circuits and components in the field, and the corresponding specific indexes and parameters are adjusted according to the actual application, and are not described in detail herein.
Compared with the prior art, the Doherty radio-frequency power amplifier removes a power divider with larger size in the prior art, the carrier input matching network is arranged in front of the input end of the carrier power amplifier, and the peak input matching network is arranged in front of the input end of the peak power amplifier. The setting enables uniform or non-uniform power distribution of input power to be achieved through the impedance value of the carrier input matching network and the impedance value of the peak input matching network, and therefore the power divider with a large size can be replaced. The output end of the carrier power amplifier is connected to the input end of a first output matching network, and the carrier input matching network and the first output matching network are both phase compensation networks with 90-degree phase shift and impedance matching. The structure enables the first output matching network to simultaneously play the role of a quarter-wavelength impedance transformation line, and 90-degree phase shift is realized. Meanwhile, the carrier input matching network comprises a phase compensation network to ensure that the combined power of the carrier power amplifier and the peak power amplifier is the maximum when the output power is high, so that the power additional efficiency of the Doherty radio-frequency power amplifier is high. In addition, the circuit replaces a quarter-wavelength impedance transformation line in the related art, so that the layout area of the Doherty radio-frequency power amplifier is small. The Doherty radio-frequency power amplifier detects the radio-frequency signal through the power detection circuit to generate a detection result, judges the output power state of the Doherty radio-frequency power amplifier according to the detection result and generates a corresponding control signal according to the output power state; and generating a peak bias control voltage corresponding to the control signal according to the control signal through the peak bias control circuit, and controlling the opening or closing of the peak power amplifier through the peak bias control voltage, so that the peak power amplifier also biases class AB, the power gain and the linearity are the same as those of a carrier power amplifier, the output power of the two paths of synthesized output power is doubled, and good linearity is ensured.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (10)
1. A Doherty radio-frequency power amplifier is characterized by comprising a driving amplifier, a carrier input matching network, a carrier bias circuit, a carrier power amplifier, a peak input matching network, a peak bias circuit, a peak power amplifier, a first output matching network, a second output matching network, a power detection circuit and a peak bias control circuit;
the driving amplifier is used for amplifying an input radio frequency signal;
the carrier input matching network is connected to the drive amplifier and is used for performing 90-degree phase shift and impedance matching on the output end of the drive amplifier;
the carrier bias circuit is connected to the carrier power amplifier and used for providing a carrier bias voltage for the carrier power amplifier;
the carrier power amplifier is connected to the carrier input matching network and used for performing power amplification on a signal output by the carrier input matching network;
the power detection circuit is used for detecting the radio frequency signal and generating a detection result, judging the output power state of the Doherty radio frequency power amplifier according to the detection result and generating a corresponding control signal according to the output power state;
the peak bias control circuit is connected to the power detection circuit and used for generating a peak bias control voltage corresponding to the control signal according to the control signal;
the peak input matching network is connected to the drive amplifier and is used for carrying out impedance matching on the output end of the drive amplifier;
the peak bias circuit is connected between the peak bias control circuit and the peak power amplifier and used for generating a peak bias voltage corresponding to the peak bias control voltage according to the peak bias control voltage and providing the peak bias voltage for the peak power amplifier;
the peak power amplifier is connected to the peak input matching network and is used for performing power amplification on a signal output by the peak input matching network;
the first output matching network is connected to the carrier power amplifier and is used for performing 90-degree phase shift and impedance matching on an output signal of the carrier power amplifier;
the second output matching network is respectively connected to the peak power amplifier and the first output matching network, and is used for performing impedance matching on an output signal of the peak power amplifier, synthesizing a signal output by the peak power amplifier and a signal output by the first output matching network into one path of output, and connecting a system load.
2. The Doherty radio frequency power amplifier of claim 1,
the input end of the drive amplifier is used as the input end of the Doherty radio frequency power amplifier;
the output end of the drive amplifier is respectively connected with the input end of the carrier input matching network, the input end of the peak input matching network and the input end of the power detection circuit;
the output end of the power detection circuit is connected to the input end of the peak bias control circuit, and the output end of the peak bias control circuit is connected to the input end of the peak bias circuit;
the output end of the carrier input matching network is respectively connected to the input end of the carrier power amplifier and the output end of the carrier bias circuit, and the input end of the carrier bias circuit is used for connecting carrier bias voltage;
the output end of the carrier power amplifier is connected to the input end of the first output matching network;
the output end of the first output matching network is connected to the first input end of the second output matching network;
the output end of the peak input matching network is respectively connected to the input end of the peak power amplifier and the output end of the peak bias circuit;
the output end of the peak power amplifier is connected to the second input end of the second output matching network;
and the output end of the second output matching network is used as the output end of the Doherty radio frequency power amplifier.
3. The Doherty radio frequency power amplifier of claim 2 wherein the carrier input matching network is a high pass T-network for 90 degree phase shift and impedance transformation; the first output matching network is a low-pass pi-type network used for 90-degree phase shift and impedance transformation.
4. The Doherty radio frequency power amplifier of claim 3,
the carrier input matching network comprises a second inductor, a second capacitor and a third capacitor; the first end of the second capacitor is used as the input end of the carrier input matching network, and the first end of the second capacitor is connected to the output end of the driving amplifier; the second end of the second capacitor is connected to the first end of the third capacitor and the first end of the second inductor respectively; the second end of the second inductor is connected to the ground; a second end of the third capacitor is used as an output end of the carrier input matching network;
the first output matching network comprises a fourth capacitor, a fifth capacitor and a third inductor; a first end of the third inductor is used as an input end of the first output matching network, and the first end of the third inductor is respectively connected to an output end of the carrier power amplifier and a first end of the fourth capacitor; a second end of the third inductor is used as an output end of the peak power amplifier, and the second end of the third inductor is connected to a first end of the fifth capacitor; the second end of the fourth capacitor and the second end of the fifth capacitor are both connected to ground.
5. The Doherty radio-frequency power amplifier of claim 4 wherein the second output matching network comprises a high-pass T-network for 90 degree phase shift and impedance transformation.
6. The Doherty radio frequency power amplifier of claim 5 wherein the second output matching network comprises a fourth inductor, a fifth inductor, a sixth inductor, a seventh inductor, a sixth capacitor and a seventh capacitor;
a first end of the fourth inductor is used as a second input end of the second output matching network, and the first end of the fourth inductor is connected to the output end of the peak power amplifier;
a second end of the fourth inductor is used as a second input end of the second output matching network, the second end of the fourth inductor is respectively connected to a second end of the fifth inductor and a first end of the sixth inductor, and the first end of the fifth inductor is connected to a power supply voltage;
a second end of the sixth inductor is connected to the first end of the sixth capacitor and the first end of the seventh inductor respectively, and a second end of the sixth capacitor is connected to the ground;
a second end of the seventh inductor is connected to a first end of the seventh capacitor, and a second end of the seventh capacitor serves as an output end of the second output matching network.
7. The Doherty radio frequency power amplifier of claim 4 wherein the peak input matching network comprises a first capacitance; the first end of the first capacitor is used as the input end of the peak value input matching network, and the first end of the first capacitor is connected to the output end of the driving amplifier; and the second end of the first capacitor is used as the output end of the peak value input matching network.
8. The Doherty radio-frequency power amplifier of claim 4, wherein the Doherty radio-frequency power amplifier further comprises a first inductor, and wherein the power supply input terminal of the driver amplifier is connected to a power supply voltage by being connected in series with the first inductor.
9. The Doherty rf power amplifier of claim 1, further comprising a power coupler for coupling an input rf signal and outputting the coupled signal to the power detection circuit;
the input end of the power coupler is used as the input end of the Doherty radio-frequency power amplifier, the first output end of the power coupler is connected to the input end of the driving amplifier, and the second output end of the power coupler is connected to the input end of the power detection circuit;
the output end of the power detection circuit is connected to the input end of the peak bias control circuit, and the output end of the peak bias control circuit is connected to the input end of the peak bias circuit;
the output end of the drive amplifier is respectively connected with the input end of the carrier input matching network and the input end of the peak input matching network;
the output end of the carrier input matching network is respectively connected to the input end of the carrier power amplifier and the output end of the carrier bias circuit, and the input end of the carrier bias circuit is used for connecting carrier bias voltage;
the output end of the carrier power amplifier is connected to the input end of the first output matching network;
the output end of the first output matching network is connected to the first input end of the second output matching network;
the output end of the peak input matching network is respectively connected to the input end of the peak power amplifier and the output end of the peak bias circuit;
the output end of the peak power amplifier is connected to the second input end of the second output matching network;
and the output end of the second output matching network is used as the output end of the Doherty radio frequency power amplifier.
10. The Doherty radio-frequency power amplifier of claim 1 wherein the carrier-input matching network, the peaking-input matching network, the first output matching network and the second output matching network are lumped parameter circuits.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122710035.2U CN216390920U (en) | 2021-11-05 | 2021-11-05 | Doherty radio frequency power amplifier |
| PCT/CN2022/125437 WO2023078061A1 (en) | 2021-11-05 | 2022-10-14 | Doherty radio frequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122710035.2U CN216390920U (en) | 2021-11-05 | 2021-11-05 | Doherty radio frequency power amplifier |
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| CN216390920U true CN216390920U (en) | 2022-04-26 |
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| WO (1) | WO2023078061A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115549611A (en) * | 2022-09-02 | 2022-12-30 | 佛山臻智微芯科技有限公司 | Integrated out-of-phase radio frequency power amplifying circuit based on multi-path power synthesis |
| CN115567012A (en) * | 2022-11-22 | 2023-01-03 | 成都明夷电子科技有限公司 | Self-adaptive broadband Doherty power amplifier |
| CN115940839A (en) * | 2022-12-08 | 2023-04-07 | 康希通信科技（上海）有限公司 | Amplifying circuit, wireless communication module, and electronic device |
| WO2023078061A1 (en) * | 2021-11-05 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Doherty radio frequency power amplifier |
| WO2024120174A1 (en) * | 2022-12-08 | 2024-06-13 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100749870B1 (en) * | 2006-06-07 | 2007-08-17 | (주) 와이팜 | Doherty amplifier |
| EP2579457B1 (en) * | 2011-09-06 | 2014-11-12 | Alcatel Lucent | Power amplifier for mobile telecommunications |
| CN102801392B (en) * | 2012-09-13 | 2015-03-11 | 电子科技大学 | Radio frequency power amplification device |
| CN104052410B (en) * | 2014-06-27 | 2019-08-30 | 京信通信***（中国）有限公司 | High-efficient linear power amplification system and its implementation |
| CN216390920U (en) * | 2021-11-05 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Doherty radio frequency power amplifier |
-
2021
- 2021-11-05 CN CN202122710035.2U patent/CN216390920U/en active Active
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2022
- 2022-10-14 WO PCT/CN2022/125437 patent/WO2023078061A1/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023078061A1 (en) * | 2021-11-05 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Doherty radio frequency power amplifier |
| CN115549611A (en) * | 2022-09-02 | 2022-12-30 | 佛山臻智微芯科技有限公司 | Integrated out-of-phase radio frequency power amplifying circuit based on multi-path power synthesis |
| CN115567012A (en) * | 2022-11-22 | 2023-01-03 | 成都明夷电子科技有限公司 | Self-adaptive broadband Doherty power amplifier |
| CN115567012B (en) * | 2022-11-22 | 2023-03-10 | 成都明夷电子科技有限公司 | Self-adaptive broadband Doherty power amplifier |
| CN115940839A (en) * | 2022-12-08 | 2023-04-07 | 康希通信科技（上海）有限公司 | Amplifying circuit, wireless communication module, and electronic device |
| WO2024120174A1 (en) * | 2022-12-08 | 2024-06-13 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip |
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| Publication number | Publication date |
|---|---|
| WO2023078061A1 (en) | 2023-05-11 |
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