CN216054669U - Gallium nitride power device convenient to heat dissipation - Google Patents
Gallium nitride power device convenient to heat dissipation Download PDFInfo
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- CN216054669U CN216054669U CN202122293311.XU CN202122293311U CN216054669U CN 216054669 U CN216054669 U CN 216054669U CN 202122293311 U CN202122293311 U CN 202122293311U CN 216054669 U CN216054669 U CN 216054669U
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The utility model relates to a gallium nitride power device convenient for heat dissipation, which comprises: the gallium nitride chip is provided with a chip gate pole, a chip source pole and a chip drain pole; the lead frame is positioned on one side of the gallium nitride chip, a gate electrode on the lead frame is connected with the gate electrode of the chip through a metal wire, a source electrode on the lead frame is connected with a source electrode of the chip through a metal wire, and a drain electrode on the lead frame is connected with the drain electrode of the chip through a metal clip; the metal clip comprises a packaging part and a heat dissipation part, the packaging part is packaged on the inner side of the shell, and the heat dissipation part is exposed on the outer side of the shell. The heat dissipation device is good in heat dissipation effect, safe, reliable and applicable to the field of medium and high power.
Description
Technical Field
The utility model relates to the technical field of semiconductor chips, in particular to a gallium nitride power device convenient for heat dissipation.
Background
Currently, as a third generation semiconductor material, gallium nitride power devices can achieve higher switching frequencies, higher system efficiencies, and higher power densities than silicon devices. More and more gallium nitride power devices are applied to the power supply industry, the overall performance of the switching power supply is improved, and the power supply contributes to energy conservation and environmental protection.
The traditional packaging mode of the gallium nitride power device is mainly single-tube discrete devices (especially surface mount packages such as DFN5x6, DFB8x8 and the like), and adopts bottom heat dissipation fins for heat dissipation and back plastic package. According to the current practice, the gan power device is used to dissipate heat through the bottom heat sink. However, gallium nitride is a lateral device, and current flows on top of the chip. The heat generated in the chip by the current is also mainly concentrated on the upper surface of the chip. Referring to fig. 1, the conventional DFN package has a gallium nitride chip 10 placed on a lead frame 20 in a normal manner, which means that the hottest top of the gallium nitride chip 10 is connected to the lead frame 20 by wire bonding, i.e., the active side of the chip is connected to the corresponding position on the lead frame 20 by a metal wire 30. However, the top of the gan chip 10 is surrounded by the molding compound, which has a high thermal resistance and is difficult to dissipate heat. Even if the bottom of the chip is connected with the copper frame, the heat is radiated through the silicon substrate radiating fins at the bottom, and the effect is still very limited.
In addition, because the gan power system application pursues miniaturization, the conventional DFN packaged gan power device can only dissipate heat by conducting heat to the copper sheet of the PCB (printed circuit board) through the bottom heat sink. The copper sheet design is limited by the limited area of the PCB, so that sufficient heat dissipation cannot be achieved frequently, and the other side of the PCB is difficult to be additionally provided with a heat radiator.
All the above problems cause that the existing gallium nitride power device can only be applied in the field of low power.
SUMMERY OF THE UTILITY MODEL
Therefore, the technical problem to be solved by the utility model is to overcome the technical defects that the gallium nitride power device in the prior art can only be applied to the field of small power and has poor heat dissipation effect, and obtain the gallium nitride power device which has good heat dissipation effect, is safe and reliable and can be suitable for the field of medium and high power.
In order to solve the above technical problem, the present invention provides a gallium nitride power device convenient for heat dissipation, comprising:
the gallium nitride chip is provided with a chip gate pole, a chip source pole and a chip drain pole;
the lead frame is positioned on one side of the gallium nitride chip, a gate electrode on the lead frame is connected with the gate electrode of the chip through a metal wire, a source electrode on the lead frame is connected with a source electrode of the chip through a metal wire, and a drain electrode on the lead frame is connected with the drain electrode of the chip through a metal clip;
the metal clip comprises a packaging part and a heat dissipation part, the packaging part is packaged on the inner side of the shell, and the heat dissipation part is exposed on the outer side of the shell.
Preferably, the metal clip is of an n-shaped configuration.
Preferably, the metal clip is a gold clip, a tin clip, a copper clip or an aluminum clip.
Preferably, the metal wire is a gold wire, a tin wire, a copper wire or an aluminum wire.
Preferably, an insulating heat-conducting layer and a heat sink are sequentially disposed above the heat dissipation portion.
Preferably, the heat radiating portion has an uneven heat radiating surface on an upper surface thereof.
Preferably, the heat dissipation surface is coated with a heat conduction insulating glue layer, and the heat radiator is attached to the heat conduction insulating glue layer.
Preferably, the lead frame is symmetrically provided with two gate poles, and the chip gate poles are arranged in one-to-one correspondence with the gate poles on the lead frame.
Preferably, two kelvin source electrodes are symmetrically arranged on the lead frame, and the two kelvin source electrodes are connected with the chip source electrode.
Preferably, a heat dissipation plate is arranged on the back of the gallium nitride power device.
The utility model discloses a packaging method of a gallium nitride power device convenient for heat dissipation, which comprises the following steps:
respectively connecting a chip source electrode and a chip gate electrode of the gallium nitride chip with corresponding pins on the lead frame in a metal routing mode;
connecting the chip drain electrode of the gallium nitride chip with a corresponding pin on the lead frame through a metal clip;
and carrying out packaging operation on the gallium nitride chip, wherein part of the metal clip is exposed outside the packaging material to dissipate heat.
Compared with the prior art, the technical scheme of the utility model has the following advantages:
1. according to the utility model, the gate electrode and the source electrode of the gallium nitride chip are connected with the bonding pad on the lead frame through the metal wire, and the drain electrode of the gallium nitride chip is connected with the lead frame through the metal clip.
2. According to the utility model, because the part of the metal clip is exposed out of the shell, namely the packaging part of the metal clip is positioned in the shell, and the heat dissipation part of the metal clip is exposed out of the shell, the heat generated when the gallium nitride power device works is discharged through the heat dissipation part, and the sufficient heat dissipation is realized.
3. The heat generated by the gallium nitride power device can be fully radiated, so that the gallium nitride power device can be applied to the field of medium and high power, and is safe and reliable.
4. According to the utility model, the heat dissipation part of the metal clip is positioned outside the shell, so that a heat radiator is conveniently added on the heat dissipation part subsequently, and the heat dissipation effect is further improved.
Drawings
FIG. 1 is a schematic structural diagram of a GaN device in the prior art;
FIG. 2 is a schematic structural diagram of a GaN power device according to the present invention;
FIG. 3 is a schematic structural view of the housing and the metal clip;
FIG. 4 is a schematic structural view of a copper clip, a thermal conductive adhesive layer and a heat sink;
FIG. 5 is a schematic diagram of a structure of a pi-shaped copper clip applied to a GaN power device.
The specification reference numbers indicate: 10. a gallium nitride chip; 20. a lead frame; 21. a gate electrode, 22, a source electrode; 23. a drain electrode; 30. a metal wire; 40. a metal clip; 41. a heat-conducting insulating glue layer; 42. a heat sink; 50. a housing.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
For conventional gan power devices, bond pads on the chip and bond pads on the leadframe are often connected by using gold, copper or aluminum wires. The routing mode can be flexible, and is particularly suitable for routing discs with relatively small areas on chips. However, the metal leads themselves cannot achieve the heat transfer effect, and only can achieve electrical connection. At this time, the gan power device can only be applied in the low power field, and when the power of the gan power device is increased, because the chip is encapsulated in the casing, as mentioned in the background art, the heat dissipation effect of the gan power device is very poor, and the gan power device has a short life and is easily damaged.
Referring to fig. 2-3, in order to improve the heat dissipation effect of the gan power device and enable the gan power device to be applicable to the middle and high power fields, the utility model discloses a gan power device convenient for heat dissipation, which comprises a gan chip 10, a lead frame 20 and a housing 50.
The gallium nitride chip 10 is provided with a chip gate, a chip source and a chip drain.
The lead frame 20 is located on one side of the gan chip 10, the gate 21 on the lead frame 20 is connected to the gate of the chip through a metal wire 30, the source 22 on the lead frame 20 is connected to the source of the chip through a metal wire 30, and the drain 23 on the lead frame 20 is connected to the drain of the chip through a metal clip 40.
The case 50 is used for packaging the gallium nitride chip 10, and the metal clip 40 includes a packaging portion and a heat dissipation portion, the packaging portion is packaged inside the case 50, and the heat dissipation portion is exposed outside the case 50.
The working principle of the utility model is as follows: because the routing pads (the chip gate and the chip source) with small area on the gallium nitride chip 10 are connected with the bonding pads on the lead frame 20 through the metal wires 30, and the drain routing pad (the chip drain) on the chip has larger area, the connection between the chip drain and the lead frame 20 is realized through the metal clip 40, and the connection mode can enable the gallium nitride power device to have smaller resistance and inductance. Since the metal clip 40 is partially exposed out of the case 50, that is, the sealing portion of the metal clip 40 is located inside the case 50, and the heat dissipation portion of the metal clip 40 is exposed outside the case 50, heat generated during the operation of the gan power device is dissipated through the heat dissipation portion, thereby achieving sufficient heat dissipation. The heat generated by the gallium nitride power device can be fully radiated, so the gallium nitride power device can be applied to the field of medium and high power. Moreover, the heat dissipation part of the metal clip 40 is located outside the housing 50, so that the heat sink 42 can be conveniently added on the heat dissipation part, and the heat dissipation effect is further improved.
In one embodiment, the metal clip 40 is an n-shaped structure. The metal clip 40 is soldered at both ends thereof to the lead frame 20 and the chip drain, respectively. The metal clip 40 is provided in an n-type to facilitate exposure of the upper end of the metal clip 40 outside the case 50. Of course, the metal clip 40 may be configured in other shapes as required, as long as the lead frame 20 is electrically connected to the chip drain. The cross-sectional area of the metal clip 40 and its length can also be set as desired.
Specifically, the metal clip 40 is a gold clip, a tin clip, a copper clip, or an aluminum clip. Of course, the metal clip 40 may also be a metal alloy, which is an electrically and thermally conductive material. Similarly, the metal wires 30 may be conventional gold wires, tin wires, copper wires or aluminum wires, thereby achieving electrical connection.
In another embodiment, the upper side of the heat dissipating portion is provided with an insulating heat conducting layer and a heat sink 42 in this order. The heat generated by the metal clip 40 can be transferred to the heat sink 42 through the insulating heat conductive layer, thereby facilitating heat dissipation.
Further, as shown in fig. 4, the upper surface of the heat dissipation portion is provided with an uneven heat dissipation surface, so that the contact area between the heat dissipation portion and the outside is increased, and the heat dissipation effect is better. Moreover, the uneven heat dissipation surface may be coated with a heat conductive and insulating adhesive layer 41, and a heat sink 42 is attached to the heat conductive and insulating adhesive layer 41. Due to the existence of the uneven radiating surface, the adhesion effect of the heat-conducting insulating adhesive layer 41 and the metal clip 40 can be improved, and the heat-radiating area of the metal clip 40 is increased due to the uneven radiating surface, so that the heat-conducting efficiency can be further improved, and the heat-radiating efficiency is improved. The uneven radiating surface in the present invention can be configured as required by those skilled in the art, for example, it can be configured as a dot matrix pit type radiating surface.
In addition, referring to fig. 5, the heat dissipation part may be further lengthened as required, that is, the metal clip 40 may be disposed in a pi shape, so as to improve the contact between the heat dissipation part and the outside.
In another embodiment, two gates are symmetrically disposed on the lead frame 20, and the gates of the chips are disposed in one-to-one correspondence with the gates 21 on the lead frame 20. The lead frame 20 is symmetrically provided with two kelvin source electrodes 22, and the two kelvin source electrodes 22 are connected to the chip source electrodes. Through the arrangement mode, the gallium nitride power device has good symmetry, good stability and balanced heating, and the device is prevented from being influenced by local overheating.
Preferably, the back of the gallium nitride power device is provided with a heat dissipation disc, heat is conducted to a copper sheet of a Printed Circuit Board (PCB) through the heat dissipation disc to achieve heat dissipation, the heat dissipation disc can achieve heat dissipation at the bottom of the gallium nitride power device, and therefore the upper surface and the lower surface of the gallium nitride power device can achieve heat dissipation simultaneously by matching with heat dissipation of the metal clip 40 on the upper side of the gallium nitride power device.
The utility model also discloses a packaging method of the gallium nitride power device convenient for heat dissipation, which comprises the following steps:
firstly, a chip source electrode and a chip gate electrode of the gallium nitride chip 10 are respectively connected with corresponding pins on the lead frame 20 in a metal routing mode. Here, the chip source of the gan chip 10 is connected to the source 22 on the lead frame 20 by a wire, and the chip gate of the gan chip 10 is connected to the gate 21 on the lead frame 20 by a wire.
And step two, connecting the chip drain of the gallium nitride chip 10 with the corresponding pin on the lead frame 20 through the metal clip 40. Because the chip drain bonding pad area of the existing DFN packaged gallium nitride power meter device is large, the chip drain is connected with the drain 23 on the lead frame 20 through the metal clip 40, and the resistance and the inductance are smaller.
And step three, carrying out packaging operation on the gallium nitride chip 10, wherein part of the metal clip 40 is exposed outside the packaging material to dissipate heat. After the second step is completed, the gallium nitride chip 10 can be packaged by epoxy resin, and in the packaging process, because part of the metal clip 40 is exposed outside the packaging material, heat generated by the gallium nitride chip 10 in the working process can be transferred to the outside through the metal clip 40, so that the gallium nitride power device is ensured to have a good heat dissipation effect. Even if the gallium nitride power device is used under high power, the heat can be discharged in time, and the gallium nitride power device is safe and reliable.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the utility model.
Claims (10)
1. A gallium nitride power device for facilitating heat dissipation, comprising:
the gallium nitride chip is provided with a chip gate pole, a chip source pole and a chip drain pole;
the lead frame is positioned on one side of the gallium nitride chip, a gate electrode on the lead frame is connected with the gate electrode of the chip through a metal wire, a source electrode on the lead frame is connected with a source electrode of the chip through a metal wire, and a drain electrode on the lead frame is connected with the drain electrode of the chip through a metal clip;
the metal clip comprises a packaging part and a heat dissipation part, the packaging part is packaged on the inner side of the shell, and the heat dissipation part is exposed on the outer side of the shell.
2. The gallium nitride power device of claim 1, wherein the metal clip is an n-shaped structure.
3. The gallium nitride power device according to claim 1, wherein the metal clip is a gold clip, a tin clip, a copper clip, or an aluminum clip.
4. The gallium nitride power device according to claim 1, wherein the metal line is a gold, tin, copper or aluminum line.
5. The gallium nitride power device according to claim 1, wherein an insulating heat conducting layer and a heat sink are provided in this order on the upper side of the heat dissipating portion.
6. The gallium nitride power device according to claim 1, wherein the upper surface of the heat dissipation portion is provided with a rugged heat dissipation surface.
7. The GaN power device as claimed in claim 6, wherein the heat dissipation surface is coated with a thermally conductive and insulating adhesive layer, and a heat sink is attached to the thermally conductive and insulating adhesive layer.
8. The GaN power device as claimed in claim 1, wherein two gates are symmetrically arranged on the lead frame, and the chip gates are arranged in one-to-one correspondence with the gates on the lead frame.
9. The GaN power device as claimed in claim 1, wherein two Kelvin sources are symmetrically disposed on the lead frame, and the two Kelvin sources are connected to the chip source.
10. The gallium nitride power device according to claim 1, wherein a backside of the gallium nitride power device is provided with a heat sink disk.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122293311.XU CN216054669U (en) | 2021-09-18 | 2021-09-18 | Gallium nitride power device convenient to heat dissipation |
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| CN202122293311.XU CN216054669U (en) | 2021-09-18 | 2021-09-18 | Gallium nitride power device convenient to heat dissipation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023279794A1 (en) * | 2021-07-06 | 2023-01-12 | 南京芯干线科技有限公司 | Switch power device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023279794A1 (en) * | 2021-07-06 | 2023-01-12 | 南京芯干线科技有限公司 | Switch power device |
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