CN215935404U - Intelligent switch MOS (metal oxide semiconductor) tube for temperature control circuit - Google Patents
Intelligent switch MOS (metal oxide semiconductor) tube for temperature control circuit Download PDFInfo
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- CN215935404U CN215935404U CN202122311735.4U CN202122311735U CN215935404U CN 215935404 U CN215935404 U CN 215935404U CN 202122311735 U CN202122311735 U CN 202122311735U CN 215935404 U CN215935404 U CN 215935404U
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- control circuit
- temperature control
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- mos tube
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Abstract
The utility model relates to the technical field of MOS (metal oxide semiconductor) tubes, and discloses an intelligent switch MOS tube for a temperature control circuit, which comprises an MOS tube, wherein a heat dissipation assembly is sleeved at the upper end of the MOS tube and comprises an installation sleeve, heat dissipation fins are arranged at the upper end of the installation sleeve, a soaking plate is arranged at the upper end of the inner cavity of the installation sleeve, installation holes are formed in two sides of the outer surface of the MOS tube, installation grooves are formed in the inner cavity of the installation holes, installation blocks are arranged on two sides of the inner cavity wall of the installation sleeve, and pins are arranged on the front surface and the back surface of the MOS tube, so that the heat dissipation effect on the MOS tube is effectively achieved.
Description
Technical Field
The utility model relates to the technical field of MOS (metal oxide semiconductor) transistors, in particular to an intelligent switch MOS transistor for a temperature control circuit.
Background
The drain electrode of a MOS tube is commonly used in a switching power supply, and is connected with a load, namely an open drain electrode, and the open drain electrode circuit can switch on and off load current no matter how high the voltage is connected with the load, so that the switch device is an ideal analog switch device, namely the principle that the MOS tube is used as the switch device.
The existing MOS tube can generate certain heat in use, and the heat is easy to exceed the curve current of the MOS tube without effective heat dissipation, so that thermal breakdown is easy to occur, and damage is caused.
The problems described above are addressed. Therefore, an intelligent switching MOS tube for a temperature control circuit is provided.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide an intelligent switch MOS (metal oxide semiconductor) tube for a temperature control circuit, when the MOS tube is used, the MOS tube can generate certain heat, and the heat is radiated through a soaking plate, so that the heat radiation effect on the MOS tube is effectively achieved, and the problems in the background art are solved.
In order to achieve the purpose, the utility model provides the following technical scheme: the utility model provides an intelligence switch MOS pipe for temperature control circuit, includes the MOS pipe, radiator unit has been cup jointed to MOS pipe upper end, and radiator unit is provided with heat radiation fins including the installation cover on the installation cover, installation cover inner chamber upper end, is provided with the soaking board.
Preferably, mounting holes are formed in two sides of the outer surface of the MOS tube, and mounting grooves are formed in inner cavities of the mounting holes.
Preferably, the two sides of the inner cavity wall of the mounting sleeve are provided with mounting blocks.
Preferably, the mounting block and the mounting groove are in a triangular structure.
Preferably, the front and back of the MOS transistor are provided with pins.
Preferably, the opening at the lower end of the mounting sleeve is positioned at the upper end of the pin.
Preferably, the joint of the lower end of the soaking plate and the upper end of the MOS tube is coated with heat-conducting silicone grease.
Compared with the prior art, the utility model has the following beneficial effects:
1. according to the intelligent switch MOS tube for the temperature control circuit, when the MOS tube is used, the MOS tube can generate certain heat, and the heat is dissipated through the soaking plate, so that the heat dissipation effect on the MOS tube is effectively achieved.
2. According to the intelligent switch MOS tube for the temperature control circuit, when the heat dissipation assembly on the outer surface of the MOS tube needs to be installed, the installation sleeve can be directly sleeved on the outer surface of the MOS tube and continuously moves downwards along with the installation sleeve, so that the soaking plate can be attached to the upper end of the MOS tube, and the installation and heat dissipation are convenient.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic diagram of a MOS transistor structure according to the present invention;
FIG. 3 is an enlarged schematic view of the structure at A in FIG. 2 according to the present invention;
FIG. 4 is a schematic structural diagram of a heat dissipation assembly of the present invention;
fig. 5 is a schematic side view of the internal structure of the heat dissipation assembly of the present invention.
In the figure: 1. an MOS tube; 11. a pin; 12. mounting holes; 121. mounting grooves; 2. a heat dissipating component; 21. installing a sleeve; 22. heat dissipation fins; 23. a vapor chamber; 231. heat-conducting silicone grease; 24. and (7) installing the block.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to solve the technical problem of heat dissipation of the MOS transistor 1, as shown in fig. 1 and fig. 4 to 5, the following preferred technical solutions are provided:
the utility model provides an intelligence switch MOS pipe for temperature control circuit, includes MOS pipe 1, and radiator unit 2 has been cup jointed to 1 upper end of MOS pipe, and radiator unit 2 is including installation cover 21, and installation cover 21 upper end is provided with radiating fin 22, and installation cover 21 inner chamber upper end is provided with soaking board 23, and MOS pipe 1 openly and back mounted has pin 11, and 21 lower extreme openings of installation cover are located pin 11 upper end, and soaking board 23 lower extreme and 1 upper end laminating department of MOS pipe scribble heat conduction silicone grease 231.
Specifically, when MOS transistor 1 is in use, MOS transistor 1 itself will produce certain heat, and these heats dispel the heat through vapor chamber 23, and heat radiation fins 22 can effectually carry out quick heat dissipation to the heat of vapor chamber 23 to effectively play the radiating effect to MOS transistor 1.
In order to solve the technical problem of mounting the heat dissipation assembly 2 on the MOS transistor 1, as shown in fig. 2-3 and 5, the following preferred technical solutions are provided:
mounting hole 12 has been seted up to MOS pipe 1 surface both sides, and mounting groove 121 has been seted up to mounting hole 12 inner chamber, and the cavity wall both sides in installation cover 21 are provided with installation piece 24, and installation piece 24 is triangle-shaped structure with mounting groove 121.
Specifically, when the radiator unit 2 of 1 surface of MOS pipe needs to be installed, installation cover 21 can directly cup joint in 1 surface of MOS pipe, along with the continuous downstream of installation cover 21 to make installation piece 24 can the joint in mounting hole 12 inner chambers, thereby make soaking plate 23 can laminate in 1 upper end of MOS pipe, the heat dissipation of easy to assemble.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The utility model provides an intelligence switch MOS pipe for temperature control circuit, includes MOS pipe (1), its characterized in that: MOS pipe (1) upper end has cup jointed radiator unit (2), and radiator unit (2) are including installation cover (21), and installation cover (21) upper end is provided with radiating fin (22), and installation cover (21) inner chamber upper end is provided with soaking board (23).
2. The intelligent switching MOS transistor for a temperature control circuit according to claim 1, wherein: mounting holes (12) are formed in two sides of the outer surface of the MOS tube (1), and mounting grooves (121) are formed in the inner cavity of the mounting holes (12).
3. The intelligent switching MOS transistor for a temperature control circuit according to claim 2, wherein: and mounting blocks (24) are arranged on two sides of the inner cavity wall of the mounting sleeve (21).
4. The intelligent switching MOS tube for the temperature control circuit according to claim 3, wherein: the mounting block (24) and the mounting groove (121) are in a triangular structure.
5. The intelligent switching MOS transistor for a temperature control circuit according to claim 1, wherein: and pins (11) are arranged on the front surface and the back surface of the MOS tube (1).
6. The MOS transistor of claim 5, wherein: the opening at the lower end of the mounting sleeve (21) is positioned at the upper end of the pin (11).
7. The intelligent switching MOS transistor for a temperature control circuit according to claim 1, wherein: and the lower end of the soaking plate (23) is coated with heat-conducting silicone grease (231) at the joint of the upper end of the MOS tube (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122311735.4U CN215935404U (en) | 2021-09-24 | 2021-09-24 | Intelligent switch MOS (metal oxide semiconductor) tube for temperature control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122311735.4U CN215935404U (en) | 2021-09-24 | 2021-09-24 | Intelligent switch MOS (metal oxide semiconductor) tube for temperature control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215935404U true CN215935404U (en) | 2022-03-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122311735.4U Active CN215935404U (en) | 2021-09-24 | 2021-09-24 | Intelligent switch MOS (metal oxide semiconductor) tube for temperature control circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215935404U (en) |
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2021
- 2021-09-24 CN CN202122311735.4U patent/CN215935404U/en active Active
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