CN215731735U - Silicon carbide diode structure - Google Patents
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- CN215731735U CN215731735U CN202121444412.6U CN202121444412U CN215731735U CN 215731735 U CN215731735 U CN 215731735U CN 202121444412 U CN202121444412 U CN 202121444412U CN 215731735 U CN215731735 U CN 215731735U
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Abstract
The utility model provides a silicon carbide diode structure which comprises a silicon carbide substrate, a silicon carbide epitaxial layer, a front electrode, a Schottky barrier layer, a P-type voltage division ring, an N-type stop ring, a composite terminal passivation layer, an ohmic contact layer and a back electrode, wherein the silicon carbide epitaxial layer is arranged on the front electrode; the back electrode, the ohmic contact layer and the silicon carbide substrate are sequentially superposed from bottom to top, and the N-type stop ring is positioned on the outer side of the P-type voltage division ring; the Schottky barrier layer and the front electrode are sequentially overlapped on the upper surface of the silicon carbide epitaxial layer from bottom to top, the composite terminal passivation layer is arranged on the upper surface of the silicon carbide epitaxial layer, and the front electrode is semi-surrounded by the composite terminal passivation layer. The defects of the silicon carbide substrate are reduced through the double-layer silicon carbide epitaxy with the blocking buffer layer, the leakage current generated by a leakage channel can be effectively cut off through the N-type cut-off ring, and the situation of large leakage amount at the edge of a device can be reduced; the composite terminal passivation layer can integrally protect the device, and the reliability of the device is enhanced.
Description
Technical Field
The utility model belongs to the technical field of semiconductor devices, and particularly relates to a silicon carbide diode structure.
Background
Silicon carbide is a compound semiconductor material composed of silicon and carbon, has excellent electrical properties, and a third-generation semiconductor, namely SIC (silicon carbide), becomes an ideal semiconductor material for manufacturing high-temperature, high-frequency, radiation-resistant and high-power electronic devices due to the characteristics of high forbidden band width, high blocking voltage, high thermal conductivity and the like. An important requirement for planar silicon carbide devices to have high reliability characteristics is good structure and termination protection.
The existing chinese patent publication No. CN109509706A discloses a method for manufacturing a silicon carbide diode and a silicon carbide diode manufactured by the method, where the silicon carbide diode includes a silicon carbide substrate, a silicon carbide epitaxial layer, a patterned field plate dielectric layer, a patterned schottky contact electrode and an ohmic contact electrode layer; the silicon carbide epitaxial layer is arranged on the front surface of the silicon carbide substrate; a patterned ion implantation area is arranged in the silicon carbide epitaxial layer and along the upper surface of the silicon carbide epitaxial layer; the upper surface of the silicon carbide epitaxial layer is provided with a patterned field plate dielectric layer, and a region, which is not covered by the patterned field plate dielectric layer, of the upper surface of the silicon carbide epitaxial layer is provided with a patterned Schottky contact electrode; partial area of the upper surface of the patterned field plate dielectric layer is covered by the patterned Schottky contact electrode, and the rest area is exposed; the ohmic contact electrode layer is arranged on the back surface of the silicon carbide substrate.
The inventor considers that the silicon carbide diode in the prior art is easily affected by substrate defects and interface instability, so that the reliability of the device is poor, and when the silicon carbide device works in a reverse direction, particularly under a high-temperature condition, when the surface charge on an oxide layer is enough to cause a larger leakage channel in an n-type semiconductor, the problem that the leakage at the edge of the device is large easily occurs exists, and the improvement is needed.
SUMMERY OF THE UTILITY MODEL
In view of the shortcomings in the prior art, it is an object of the present invention to provide a silicon carbide diode structure.
The silicon carbide diode structure comprises a silicon carbide substrate, a silicon carbide epitaxial layer, a front electrode, a Schottky barrier layer, a P-type voltage division ring, an N-type stop ring, a composite terminal passivation layer, an ohmic contact layer and a back electrode; the back electrode, the ohmic contact layer and the silicon carbide substrate are sequentially stacked from bottom to top, one or more layers of silicon carbide epitaxial layers are arranged above the silicon carbide, the P-type voltage dividing ring is arranged in the silicon carbide epitaxial layer on the uppermost layer through ion implantation, the N-type stop ring is arranged in the silicon carbide epitaxial layer on the uppermost layer through ion implantation, and the N-type stop ring is positioned outside the P-type voltage dividing ring; the Schottky barrier layer and the front electrode are sequentially overlapped on the upper surface of the silicon carbide epitaxial layer on the uppermost layer from bottom to top, the composite terminal passivation layer is arranged on the upper surface of the silicon carbide epitaxial layer on the uppermost layer, and the front electrode is partially surrounded by the composite terminal passivation layer and part of the upper surface of the front electrode is exposed.
Preferably, the upside border position of positive electrode is formed with the cooperation portion, compound terminal passivation layer includes silica layer and phosphosilicate glass layer, the stack in proper order down is being located the upper surface of the carborundum epitaxial layer of the superiors on silica layer and phosphosilicate glass layer two, just the upper surface on phosphosilicate glass layer is laminated with the lower surface of cooperation portion.
Preferably, the thickness of the silicon dioxide layer is between 10 and 1000 angstroms, and the thickness of the phosphosilicate glass layer is 1000-10000 angstroms.
Preferably, the composite terminal passivation layer further comprises a silicon nitride layer and a polyimide layer, wherein the silicon nitride layer and the polyimide layer are sequentially stacked on the upper surface of the phosphorosilicate glass layer from bottom to top, and the silicon nitride layer and the polyimide layer both cover the edge of the upper surface of the front electrode.
Preferably, an isolation buffer layer is arranged between the silicon carbide substrate and the silicon carbide epitaxial layer.
Preferably, the isolation buffer layer comprises N-type silicon carbide conductive material, the thickness is between 0.5um and 2um, and the resistivity is 1016-1017In the meantime.
Preferably, the silicon carbide epitaxial layer comprises a first epitaxial layer and a second epitaxial layer, the first epitaxial layer being located below the second epitaxial layer, both the first epitaxial layer and the second epitaxial layer comprising a silicon carbide conductive material.
Preferably, the thickness of the first epitaxial layer is between 0.5um and 5um, and the resistivity of the first epitaxial layer is 1016-1017In the meantime.
Preferably, the thickness of the second epitaxial layer is between 2um and 50um, and the resistivity of the second epitaxial layer is 10um15-1016In the meantime.
Preferably, the ohmic contact layer comprises a metal nickel layer, and the thickness of the ohmic contact layer is between 50nm and 1000 nm.
Compared with the prior art, the utility model has the following beneficial effects:
1. according to the utility model, by using the double-layer silicon carbide epitaxy with the barrier buffer layer, the defect of the silicon carbide substrate is reduced and extends to the silicon carbide epitaxy during homoepitaxy, and the defect of the silicon carbide substrate is reduced, so that the yield and the reliability of the product are improved; the N-type stop ring can effectively stop leakage current generated by a leakage channel, so that the phenomenon of large leakage amount at the edge of a device is reduced;
2. according to the utility model, the N-type cutoff ring is added at the outermost side of the terminal, namely the edge of the oxide layer outside the depletion layer serves as a cutoff function of the leakage channel, so that on one hand, the leakage current generated by the leakage channel can be effectively cut off, and on the other hand, the damage of the P-type voltage division ring caused under various conditions can be effectively prevented, thereby being beneficial to prolonging the service life of the silicon carbide diode;
3. according to the utility model, a multilayer composite terminal passivation layer structure is formed by the silicon dioxide layer, the phosphorosilicate glass layer, the silicon nitride layer and the polyimide layer, so that the overall protection effect on the terminal is improved; the problem of large stress between different film layers and the problem of unmatched expansion coefficient with a metal layer material are solved, the internal stress between the film layers is reduced, the packaging resistance of a product is improved, and the core breaking rate in the wafer processing and packaging processes is reduced, so that the reliability of the device is enhanced.
Drawings
Other features, objects and advantages of the utility model will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic diagram of the overall layer structure of a silicon carbide diode according to the present invention;
fig. 2 is a flow chart of a method for fabricating a silicon carbide diode according to the present invention.
Reference numerals:
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the utility model, but are not intended to limit the utility model in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the utility model. All falling within the scope of the present invention.
As shown in fig. 1, a silicon carbide diode structure according to the present invention includes a silicon carbide substrate 10, an isolation buffer layer 11, a silicon carbide epitaxial layer 14, a front electrode 70, a schottky barrier layer 40, a P-type grading ring 20, an N-type cutoff ring 30, a composite termination passivation layer 99, an ohmic contact layer 100, and a back electrode 110.
As shown in fig. 1, the back electrode 110, the ohmic contact layer 100 and the silicon carbide substrate 10 are stacked in sequence from bottom to top. The silicon carbide substrate 10 has a layer structure made of an N-type conductive material, and the thickness of the silicon carbide substrate 10 is between 100-300um, preferably 200 um. The ohmic contact layer 100 is formed by depositing metallic nickel on the back surface of the silicon carbide substrate 10, and the thickness of the ohmic contact layer 100 is between 50nm and 1000nm, preferably 1000 nm. The back electrode 110 is formed by depositing a metal or a composite metal on the back of the ohmic contact layer 100, the back electrode 110 includes, but is not limited to, an alloy layer formed by combining a titanium metal layer, a nickel metal layer, a silver metal layer, and a continuous multi-layer metal, and the thickness of the back electrode 110 is between 1-10um, preferably 5 um.
As shown in fig. 1, an isolation buffer layer 11 is grown on the upper surface of a silicon carbide substrate 10, the isolation buffer layer 11 is an N-type silicon carbide conductive material layer, and the thickness of the isolation buffer layer 11 is between 0.5um and 2um, preferably 1 um; resistivity of 1016-1017In the meantime. Silicon carbide epitaxial layer 14 has two-layerly grown from making progress down in proper order at the upper surface of keeping apart buffer layer 11, and silicon carbide epitaxial layer 14 is N type silicon carbide conducting material layer, and two-layer silicon carbide epitaxial layer 14 are first epitaxial layer 12 and second epitaxial layer 13 respectively, and first epitaxial layer 12 is located the below of second epitaxial layer 13, and the bottom surface of first epitaxial layer 12 and the top surface contact of keeping apart buffer layer 11.
The thickness of the first epitaxial layer 12 is between 0.5um and 5um, preferably 5um, and the resistivity of the first epitaxial layer 12 is 1016-1017To (c) to (d); the thickness of the second epitaxial layer 13 is between 2um and 50um, preferably 20um, and the resistivity of the second epitaxial layer 13 is 1015-1016In the meantime. By using the double-layer silicon carbide epitaxial layer 14 with the isolation buffer layer 11, the defect of the silicon carbide substrate 10 can be reduced and the defect can be extended into the silicon carbide epitaxial layer 14 during homoepitaxy, so that the defect of the silicon carbide substrate 10 is reduced, and the yield and the reliability of products are improved.
The P-type voltage-dividing ring 20 and the N-type stop ring 30 are both mounted on the upper side of the second epitaxial layer 13, the P-type voltage-dividing ring 20 is concentrically mounted in the second epitaxial layer 13 through ion implantation, the N-type stop ring 30 is concentrically mounted at the edge of the second epitaxial layer 13 through ion implantation, the N-type stop ring 30 is located on the outer side of the three P-type voltage-dividing rings 20, and the N-type stop ring 30 is concentric with the three P-type voltage-dividing rings 20. At the N type stop ring 30 of second epitaxial layer 13 outermost side, the oxide layer edge that can the depletion layer outside acts as the electric leakage passageway and stops the effect, can effectually block the electric leakage that the electric leakage passageway produced to the damage of the P type partial pressure ring 20 that leads to under the multiple circumstances can be effectual reduced.
A schottky barrier layer 40 is grown by deposition on the middle of the top wall of the second epitaxial layer 13. the schottky barrier layer 40 includes, but is not limited to, a titanium layer, a nickel layer, a molybdenum layer, a platinum layer, a chromium layer, and an alloy layer. The front electrode 70 is grown by deposition on the schottky barrier layer 40, the front electrode 70 includes but is not limited to a titanium layer, a nickel layer, a molybdenum layer, a platinum layer, a chromium layer and an alloy layer, the thickness of the front electrode 70 is between 1-10um, preferably 5um, and the edge position of the upper side of the front electrode 70 is formed with a matching portion 71.
The composite terminal passivation layer 99 includes a silicon dioxide layer 50, a phosphosilicate glass layer 60, a silicon nitride layer 80 and a polyimide layer 90, the silicon dioxide layer 50, the phosphosilicate glass layer 60, the silicon nitride layer 80 and the polyimide layer 90 are sequentially stacked from bottom to top on the upper surface of the second epitaxial layer 13, and the composite terminal passivation layer 99 partially surrounds the front electrode 70 and partially exposes a portion of the upper surface of the front electrode 70. The thickness of the phosphosilicate glass layer 60 is 1000-10000 angstrom, preferably 5000 angstrom, the thickness of the silicon dioxide layer 50 is 10-1000 angstrom, preferably 1000 angstrom, and the bottom surface of the silicon dioxide layer 50 contacts with the upper surface of the second epitaxial layer 13, and the upper surface of the phosphosilicate glass layer 60 contacts with the lower surface of the matching part 71. The silicon nitride layer 80 and the polyimide layer 90 both cover the upper surface of the matching portion 71 of the front electrode 70, and the thickness of the silicon nitride layer 80 is between 1000-10000 angstroms, preferably 5000 angstroms; the thickness of the polyimide layer 90 is between 1um and 5um, preferably 3 um.
Through the composite terminal passivation layer 99 composed of the silicon dioxide layer 50, the phosphorosilicate glass layer 60, the silicon nitride layer 80 and the polyimide layer 90 arranged below the front electrode 70, the protection degree of the whole terminal is improved, the problems of large stress existing between different film layers and unmatched expansion coefficients of metal layer materials are solved, the internal stress between the film layers is reduced, the anti-packaging capacity of a product is improved, the core breaking rate in the wafer processing and packaging processes is reduced, and the reliability of a device is enhanced.
As shown in fig. 2, the method for manufacturing a silicon carbide diode structure according to the present invention includes the steps of:
s1, forming the isolation buffer layer 11: a silicon carbide substrate 10 is prepared, and an isolation buffer layer 11 is grown on the upper surface of the silicon carbide substrate 10, the isolation buffer layer 11 having a thickness of 1 um.
S2, forming the silicon carbide epitaxial layer 14: depositing twice on the upper surface of the isolation buffer layer 11 to form two silicon carbide epitaxial layers 14; the thickness of the first epitaxial layer 12 is 5um and the thickness of the second epitaxial layer 13 is 20 um.
S3, forming the N-type cutoff ring 30: and generating a silicon dioxide protective layer on the outer surface of the second epitaxial layer 13 by deposition, wherein the thickness of the silicon dioxide protective layer is between 1 and 2 um. Etching by a coating, exposing and developing process of photoresist to form an N-type area window, and then forming an N-type stop ring 30 by multiple N-ion implantation; the N-type ion implantation is nitrogen ion, the implantation temperature is 300-700 ℃, and the implantation energy is 300-600 kev.
S4, removing the silicon dioxide protective layer: and removing the silicon dioxide protective layer and drying, cleaning by using a cleaning solution after removing the silicon dioxide protective layer, and repeatedly cleaning by using deionized water, blow-drying by using nitrogen, drying and the like.
S5, forming the P-type voltage division ring 20: and generating a silicon dioxide protective layer on the outer surface of the second epitaxial layer 13 by deposition, wherein the thickness of the silicon dioxide protective layer is between 1 and 2 um. Then, carrying out etching treatment through a coating, exposing and developing process of the photoresist to form a P-type area window, and then forming a P-type voltage division ring 20 through multiple times of P ion implantation; the P-type ion implantation is Al ion or boron ion, the implantation temperature is 300-.
S6, removing the silicon dioxide protective layer: and removing the silicon dioxide protective layer and drying, cleaning by using a cleaning solution after removing the silicon dioxide protective layer, and repeatedly cleaning by using deionized water, blow-drying by using nitrogen, drying and the like.
S7, high-temperature annealing activation: depositing a carbon film by sputtering or coating PR glue, wherein the thickness of the carbon film is 10-1000nm, then performing high-temperature annealing activation at the temperature of 1300-2000 ℃, using inert gas as protective gas, and then removing the carbon film;
s8, growth of silicon dioxide layer 50 and phosphosilicate glass layer 60: carrying out thermal oxidation growth on the silicon carbide epitaxial layer 14 positioned on the uppermost layer to form a silicon dioxide layer 50, and then forming a phosphorosilicate glass layer 60 above the silicon dioxide layer 50 by using a furnace tube or CVD deposition; the temperature of the hot oxygen is between 1300 ℃ and 2000 ℃, and the oxidation thickness is 10-1000 angstroms; the thickness of the phosphosilicate glass layer 60 is 1000-10000 angstroms.
S9, forming an electrode window: and etching the silicon dioxide layer 50 and the phosphorosilicate glass layer 60 through a coating, exposing and developing process of photoresist to form an electrode window.
S10, growth of schottky barrier layer 40: a metal is deposited at the electrode window to form a schottky barrier layer 40.
S11, growth front electrode 70: depositing metal or composite metal on the schottky barrier layer 40, and etching by a coating, exposing and developing process of photoresist to form a front electrode 70; the front electrode 70 has a thickness of between 1-10 um.
S12, growing silicon nitride layer 80 and polyimide layer 90: depositing a silicon nitride layer 80 and a polyimide layer 90 in sequence above the phosphorosilicate glass layer 60, and etching by a coating, exposing and developing process of photoresist to expose partial area on the top of the front electrode 70; the thickness of the silicon nitride layer 80 is between 1000-10000 angstrom, and the thickness of the polyimide layer 90 is between 1um-5 um.
S13, grinding the silicon carbide substrate 10: the thickness of the silicon carbide substrate 10 is thinned to 100um-300um by grinding.
S14, forming the ohmic contact layer 100: and depositing metal nickel on the back of the silicon carbide substrate 10 to form the ohmic contact layer 100, wherein the thickness of the ohmic contact layer 100 is between 50nm and 1000 nm.
S15, forming the back electrode 110: and depositing metal or composite metal on the back surface of the ohmic contact layer 100 to form a back electrode 110, wherein the thickness of the back electrode 110 is between 1 and 10 um.
Principle of operation
In the work, workers sequentially perform the steps of generating an isolation buffer layer 11, generating a silicon carbide epitaxial layer 14, forming an N-type stop ring 30, removing a silicon dioxide protective layer, forming a P-type protection ring, removing the silicon dioxide protective layer, annealing and activating at high temperature, growing a silicon dioxide layer 50 and a phosphorosilicate glass layer 60, forming an electrode window, growing a Schottky barrier layer 40, growing a front electrode 70, growing a silicon nitride layer 80 and a polyimide layer 90, grinding a silicon carbide substrate 10, forming an ohmic contact layer 100, forming a back electrode 110 and the like to manufacture a double-layer silicon carbide epitaxial layer 14 with the isolation buffer layer 11, arranging the N-type stop ring 30 in a second epitaxial layer 13, thereby reducing the defects of the silicon carbide substrate 10, improving the yield and the reliability of products, and can effectually block the leakage current that the electric leakage passageway produced to can effectively prevent the damage of the P type partial pressure ring 20 that leads to under the multiple condition.
In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the utility model. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (10)
1. A silicon carbide diode structure is characterized by comprising a silicon carbide substrate (10), a silicon carbide epitaxial layer (14), a front electrode (70), a Schottky barrier layer (40), a P-type voltage division ring (20), an N-type stop ring (30), a composite terminal passivation layer (99), an ohmic contact layer (100) and a back electrode (110);
the back electrode (110), the ohmic contact layer (100) and the silicon carbide substrate (10) are sequentially stacked from bottom to top, one or more layers of silicon carbide epitaxial layers (14) are arranged above silicon carbide, the P-type voltage dividing ring (20) is arranged in the silicon carbide epitaxial layer (14) on the uppermost layer through ion implantation, the N-type stopping ring (30) is arranged in the silicon carbide epitaxial layer (14) on the uppermost layer through ion implantation, and the N-type stopping ring (30) is arranged on the outer side of the P-type voltage dividing ring (20);
the Schottky barrier layer (40) and the front electrode (70) are sequentially superposed on the upper surface of the silicon carbide epitaxial layer (14) on the uppermost layer from bottom to top, the composite terminal passivation layer (99) is arranged on the upper surface of the silicon carbide epitaxial layer (14) on the uppermost layer, and the composite terminal passivation layer (99) semi-surrounds the front electrode (70) and partially exposes the upper surface of the front electrode (70).
2. The silicon carbide diode structure according to claim 1, wherein the upper side edge position of the front electrode (70) is formed with a fitting portion (71), the composite terminal passivation layer (99) comprises a silicon dioxide layer (50) and a phosphosilicate glass layer (60), the silicon dioxide layer (50) and the phosphosilicate glass layer (60) are sequentially stacked from bottom to top on the upper surface of the silicon carbide epitaxial layer (14) located at the uppermost layer, and the upper surface of the phosphosilicate glass layer (60) is attached to the lower surface of the fitting portion (71).
3. The silicon carbide diode structure as claimed in claim 2, wherein said silicon dioxide layer (50) has a thickness of between 10-1000 angstroms and said phosphosilicate glass layer (60) has a thickness of 1000-10000 angstroms.
4. A silicon carbide diode structure according to claim 2 wherein the composite termination passivation layer (99) further comprises a silicon nitride layer (80) and a polyimide layer (90), the silicon nitride layer (80) and the polyimide layer (90) both overlying the upper surface of the phosphosilicate glass layer (60) in sequence from bottom to top, and the silicon nitride layer (80) and the polyimide layer (90) both covering the edges of the upper surface of the front electrode (70).
5. A silicon carbide diode structure according to claim 1 wherein an isolation buffer layer (11) is provided between the silicon carbide substrate (10) and the silicon carbide epitaxial layer (14).
6. A silicon carbide diode structure as claimed in claim 5 wherein the isolation buffer layer (11) comprises a layer of N-type silicon carbide conducting material having a thickness of between 0.5um and 2um and a resistivity of 1016-1017In the meantime.
7. A silicon carbide diode structure as claimed in claim 1 wherein the silicon carbide epitaxial layer (14) comprises a first epitaxial layer (12) and a second epitaxial layer (13), the first epitaxial layer (12) being located below the second epitaxial layer (13), the first epitaxial layer (12) and the second epitaxial layer (13) both comprising a layer of silicon carbide conductive material.
8. A silicon carbide diode structure as claimed in claim 7 wherein the thickness of the first epitaxial layer (12) is between 0.5um and 5um and the resistivity of the first epitaxial layer (12) is 10um16-1017In the meantime.
9. The silicon carbide diode structure of claim 7, wherein the second epitaxial layer (13) has a thickness of between 2um and 50um, and the second epitaxial layer (13) has a resistivity of 10um15-1016In the meantime.
10. The silicon carbide diode structure of claim 1, wherein the ohmic contact layer (100) comprises a layer of metallic nickel, the ohmic contact layer (100) having a thickness of between 50nm and 1000 nm.
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| CN202121444412.6U CN215731735U (en) | 2021-06-28 | 2021-06-28 | Silicon carbide diode structure |
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